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    • 1. 发明授权
    • Diamond film and method for producing the same
    • 金刚石薄膜及其制造方法
    • US07070650B2
    • 2006-07-04
    • US10421562
    • 2003-04-23
    • Hitoshi NoguchiYoshihiro Kubota
    • Hitoshi NoguchiYoshihiro Kubota
    • C30B23/00
    • C23C16/274C23C16/278C30B25/105C30B29/04
    • There is disclosed a method for producing a diamond film on a base material by a vapor phase reaction at least with introducing a raw material gas, wherein B(OCH3)3 gas is added to the raw material gas as a source of boron to be doped, and a diamond film is deposited on the base material by a vapor phase reaction utilizing the mixed raw material gas. There can be provided a method enabling easy and uniform production of a diamond film showing a low electric resistivity value with good reproducibility and few problems concerning handling such as serious bad influence on human bodies and explosiveness during the doping process.
    • 公开了至少通过引入原料气体,通过气相反应在基材上制备金刚石膜的方法,其中B(OCH 3 3)3气体 作为待掺杂的硼源加入到原料气体中,并且通过利用混合原料气体的气相反应将金刚石膜沉积在基材上。 可以提供一种能够容易且均匀地制造金刚石膜的方法,其具有低的电阻率值,具有良好的再现性,并且在掺杂过程中对诸如对人体的严重不良影响和爆炸性的处理问题很少。
    • 2. 发明授权
    • Method for preparation of diamond film
    • 金刚石膜的制备方法
    • US06465049B2
    • 2002-10-15
    • US09741431
    • 2000-12-21
    • Hitoshi NoguchiYoshihiro Kubota
    • Hitoshi NoguchiYoshihiro Kubota
    • B05D122
    • C23C16/274C23C16/0254
    • In subjecting a substrate of low electric conductivity to a pretreatment by holding the same within a fluidized bed of diamond particles for the formation of a diamond film on the substrate surface, a treatment method is disclosed which is capable of preventing decrease in the effect of the pretreatment. The pretreatment of the substrate is conducted within a fluidized bed of diamond particles by keeping the electrostatic potential of the substrate in the range from −1.5 to +1.5 kV. It is desirable that the relative humidity of the gas for the fluidization of diamond particles is controlled to be 40% or higher. It is more desirable that ion bombardment onto the substrate surface to effect neutralization of the electrostatic charges. The fluidizing gas is humidified preferably by using a bubbling apparatus or spraying apparatus.
    • 在将低电导率的基板保持在金刚石颗粒的流化床内​​以在基板表面上形成金刚石膜的情况下进行预处理,公开了一种能够防止在基板表面上形成金刚石膜的处理方法 预处理。 通过将衬底的静电电位保持在-1.5至+ 1.5kV的范围内,在金刚石颗粒的流化床内​​进行衬底的预处理。 金属颗粒的流化气体的相对湿度优选为40%以上。 更希望离子轰击到衬底表面上以实现静电电荷的中和。 流化气体优选通过使用鼓泡装置或喷雾装置进行加湿。
    • 4. 发明授权
    • X-ray lithographic mask blank with reinforcement
    • X光平版印刷掩模板加强
    • US5199055A
    • 1993-03-30
    • US908330
    • 1992-07-06
    • Hitoshi NoguchiYoshihiko NagataMeguru KashidaYoshihiro Kubota
    • Hitoshi NoguchiYoshihiko NagataMeguru KashidaYoshihiro Kubota
    • G03F1/22G03F7/20G21K1/06H01L21/027
    • G03F1/22G03F7/70866G21K1/06
    • Proposed is a high-precision X-ray lithographic mask blank with reinforcement free from warping or distortion. The mask blank is an integral body comprising: (a) a frame made from a silicon wafer; (b) a membrane of an X-ray permeable material such as silicon carbide adhering to and supported by one surface of the frame; and (c) a reinforcing member made from a single crystal of silicon adhesively bonded to the other surface of the frame with (d) a layer of silicon oxide intervening between the frame and the reinforcing member. The mask blank can be prepared in a process of first forming a layer of silicon oxide on the surface of the silicon wafer and/or reinforcing member prior to deposition of the X-ray permeable film on the silicon wafer and heating them together at a temperature of 800.degree. C. or lower while they are in direct contact with each other with the silicon oxide layer intervening therebetween.
    • 提出了一种高精度的X光平版印刷掩模,无需翘曲或变形。 掩模坯料是一体的主体,其包括:(a)由硅晶片制成的框架; (b)附着在框架的一个表面并由其支撑的诸如碳化硅的X射线透过材料的膜; 和(c)由硅的单晶制成的加强构件,其与(d)介于框架和加强构件之间的氧化硅层粘合地结合到框架的另一个表面。 掩模坯料可以在将X射线透过膜沉积在硅晶片上之前首先在硅晶片和/或加强元件的表面上形成氧化硅层的过程中制备,并在温度 800℃以下,同时它们彼此直接接触,其间介于其间的氧化硅层。
    • 5. 发明授权
    • Method of producing diamond film for lithography
    • 制作光刻用金刚石薄膜的方法
    • US06509124B1
    • 2003-01-21
    • US09705709
    • 2000-11-06
    • Hitoshi NoguchiYoshihiro KubotaIkuo Okada
    • Hitoshi NoguchiYoshihiro KubotaIkuo Okada
    • G03F900
    • C23C16/274C23C16/01C23C16/0254C23C16/277G03F1/20
    • There is disclosed a method for producing a diamond film for lithography wherein a diamond film is formed on a silicon substrate on which an insulating film is formed or on an insulating substrate using a mixed gas of methane gas, hydrogen gas and oxygen gas as a raw material gas, and then the substrate is removed by etching treatment, and a method of producing a mask membrane for lithography wherein diamond particles fluidized with gas are brought into contact with a surface of a silicon substrate on which an insulating film is formed or an insulating substrate, a diamond film is grown on the substrate, and then the substrate is removed by etching treatment. There can be provided a method of producing a diamond film for lithography wherein a diamond film having high crystallinity and desired membrane stress can be formed on a substrate, and the film can be easily produced without degrading smoothness, membrane stress or the like after film formation.
    • 公开了一种用于制备用于光刻的金刚石膜的方法,其中金刚石膜形成在其上形成绝缘膜的硅基板上或绝缘基板上,使用甲烷气体,氢气和氧气的混合气体作为原料 然后通过蚀刻处理去除衬底,以及制造用于光刻的掩模膜的方法,其中用气体流化的金刚石颗粒与其上形成绝缘膜的硅衬底的表面接触或绝缘膜 在基板上生长金刚石膜,然后通过蚀刻处理去除衬底。 可以提供一种制备用于光刻的金刚石膜的方法,其中可以在基底上形成具有高结晶度和所需膜应力的金刚石膜,并且可以容易地制备膜,而不会在成膜后降低平滑度,膜应力等 。
    • 10. 发明授权
    • Surface acoustic wave device
    • 表面声波装置
    • US07122938B2
    • 2006-10-17
    • US10836201
    • 2004-05-03
    • Hitoshi NoguchiYoshihiro Kubota
    • Hitoshi NoguchiYoshihiro Kubota
    • H03H9/25
    • H03H9/02582H03H3/08
    • There is disclosed a surface acoustic wave device having at least a diamond film, a piezoelectric-material film, and an electrode on a base material wherein all or some part of the diamond film consists of an electroconductive diamond in which a dopant is doped. Thereby, there can be provided a surface acoustic wave device wherein breakage of the substrate due to generation of static electricity can be prevented in a device manufacturing process so that the device manufacture yield can be increased, and electrification can be prevented at the time of real use so that high performance can be maintained for a long time, even if it is a surface acoustic wave device using diamond.
    • 公开了一种表面声波装置,其至少具有金刚石膜,压电材料膜和基材上的电极,其中金刚石膜的全部或部分由掺杂掺杂剂的导电金刚石构成。 因此,可以提供一种表面声波装置,其中在器件制造过程中可以防止由于静电产生导致的基板的断裂,从而可以提高器件的制造成品率,并且可以在实际的时候防止通电 使用这样的高性能可以长时间保持,即使它是使用金刚石的表面声波装置。