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    • 72. 发明专利
    • Image forming apparatus
    • 图像形成装置
    • JP2010115805A
    • 2010-05-27
    • JP2008289101
    • 2008-11-11
    • Ebara CorpMurata Machinery LtdOkutekku:Kk村田機械株式会社株式会社オクテック株式会社荏原製作所
    • MURAKAMI TAKESHISOFUGAWA TAKUJIOKUMURA KATSUYASOJO YOSHIHIRO
    • B41J2/385G03G15/05
    • PROBLEM TO BE SOLVED: To provide an image forming apparatus which can carry out thick-film printing at a higher speed and with high accuracy. SOLUTION: The image forming apparatus 1 includes: a supply device 10 which supplies fine particles 100; an imaging device 20 which forms a thick-film image by hitting and adhering the fine particles 100 to a surface of an imaging object 40 after electrically charging and emitting the fine particles 100, focusing and deflecting a flow of the flying fine particles 100; and a fixing device 30 which fixes the thick-film image formed on the imaging object 40. The imaging device 20 includes a blade 200 which electrically charges the fine particles 100, a pair of supply electrode 210 and an anode electrode 230 which emit the charged fine particles 100, a suppressor electrode 220 which permits or prohibits emission of the fine particles 100, a focus electrode 240 which focuses the flow of the emitted fine particles 100 by an electric field, a deflecting electrode 250 which deflects a direction of the flow of the focused fine particles 100, and a target electrode 260 which adheres the fine particles 100 to the imaging object 40 by impacting. COPYRIGHT: (C)2010,JPO&INPIT
    • 要解决的问题:提供一种能够以更高的速度和高精度进行厚膜印刷的图像形成装置。 解决方案:图像形成装置1包括:供给装置10,其供给微粒100; 成像装置20,其在充电和发射微粒100之后,将微粒100击打并粘附到成像对象40的表面上,形成厚膜图像,聚焦和偏转飞行微粒100的流动; 以及固定装置30,其固定形成在成像对象物40上的厚膜图像。成像装置20包括对微粒100进行电荷的刀片200,一对供给电极210和发射带电的阳极电极230 微粒100,允许或禁止发射微粒100的抑制电极220,通过电场聚焦发射的细颗粒100的流动的聚焦电极240,偏转电极250,其偏转方向 聚焦细颗粒100和通过冲击将微粒100粘附到成像对象40的目标电极260。 版权所有(C)2010,JPO&INPIT
    • 78. 发明专利
    • Vacuum heating furnace
    • 真空加热炉
    • JP2014081096A
    • 2014-05-08
    • JP2012227646
    • 2012-10-15
    • Ebara Corp株式会社荏原製作所Jsr CorpJsr株式会社Tokyo Electron Ltd東京エレクトロン株式会社
    • KAWASAKI HIROYUKISOFUGAWA TAKUJIOKUMURA KATSUYAYAMADA KINJINAOI MASAYAKIMURA YOSHIO
    • F27B5/05F27B5/14F27D7/06F27D11/02H05B3/00
    • PROBLEM TO BE SOLVED: To provide a compact vacuum heating furnace capable of performing processing of vacuum drying of moisture content, a solvent and the like included in various samples (materials) by heating the various samples (materials) with low power consumption while a pressure in a chamber is reduced by pressure reducing means such as a vacuum pump.SOLUTION: The vacuum heating furnace is provided which is connected with pressure reducing means, includes a heater inside thereof and heats a sample 1 in a pressure-reduced vacuum. The vacuum heating furnace includes: a chamber CH which is composed of a substantially-cylindrical container-shaped chamber body 11 closed at one end and opened at the other end, and a bottom plate 12 closing an opening portion of the chamber body 11 and houses a sample; a sample support which is disposed inside the chamber body 11 and holds the sample 1; and the heater 14 disposed in the chamber CH and heating the sample 1.
    • 要解决的问题:提供一种能够通过以低功耗加热各种样品(材料)而能够进行各种样品(材料)中包含的含水量,溶剂等的真空干燥处理的小型真空加热炉,同时压力 在真空泵中通过减压装置减压室。解决方案:提供与减压装置连接的真空加热炉,其中包括加热器,并在减压真空中加热样品1。 真空加热炉包括:室CH,其由在一端封闭并在另一端开口的大致圆柱形的容器形室室主体11和封闭室主体11的开口部分的底板12构成, 一个样品; 样品支撑体,其设置在室主体11的内部并保持样品1; 以及设置在室CH中并加热样品1的加热器14。
    • 80. 发明专利
    • Apparatus for manufacturing semiconductor substrate
    • 制造半导体基板的装置
    • JP2006339665A
    • 2006-12-14
    • JP2006169432
    • 2006-06-19
    • Ebara CorpToshiba Corp株式会社東芝株式会社荏原製作所
    • KIMURA NORIOMISHIMA KOJIKUNISAWA JUNJIMAKINO NATSUKITSUJIMURA MANABUMATSUDA TETSUROKANEKO HISAFUMIOKUMURA KATSUYA
    • H01L21/288C25D7/12C25D19/00H01L21/304H01L21/677
    • PROBLEM TO BE SOLVED: To provide an apparatus for manufacturing a semiconductor substrate suitable for a small-scaled manufacturing line, which can produce various products in small amounts, cope with a large change of the number of products, produce products having a short product life, and is capable of changing the function flexibly or updating the apparatus. SOLUTION: The apparatus for manufacturing the semiconductor substrate is equipped with a loader/unloader 120, a plurality of treatment units such as a plating film-forming film unit 113, and a transfer mechanism (robots 131-134) which transfers the semiconductor substrate between the units. The mounting portion of each unit has a guide. Each unit can be loaded to the apparatus for manufacturing the semiconductor substrate, or removed from the apparatus for manufacturing the semiconductor substrate, and exchanged for other units, by moving along the guide. The apparatus for manufacturing the semiconductor substrate is comprised by freely combining the units needed in the semiconductor manufacturing processes. And the units performing distinct treatments in the apparatus for manufacturing the semiconductor substrate can be exchanged each other. COPYRIGHT: (C)2007,JPO&INPIT
    • 要解决的问题:为了提供适合于能够少量生产各种产品的适合于小规模生产线的半导体基板的设备,可以应对产品数量的大量变化,生产具有 产品寿命短,并且能够灵活地改变功能或更新设备。 解决方案:用于制造半导体衬底的装置装备有装载器/卸载器120,多个处理单元如镀膜形成膜单元113和转移机构(机器人131-134) 半导体衬底之间的单元。 每个单元的安装部分都有一个导轨。 每个单元可以被加载到用于制造半导体衬底的装置中,或者从用于制造半导体衬底的装置中移除,并且通过沿导向件移动而被交换到其它单元。 用于制造半导体衬底的装置包括通过自由组合半导体制造工艺中所需的单元。 并且在用于制造半导体衬底的装置中执行不同处理的单元可以彼此交换。 版权所有(C)2007,JPO&INPIT