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71. 发明授权

US07387989B2 AlxGayInl−x−yN substrate, cleaning method of AlxGayInl−x−yN substrate, AlN substrate, and cleaning method of AlN substrate 有权
标题翻译： AlxGayInl-x-yN衬底，AlxGayInl-x-yN衬底的清洗方法，AlN衬底和AlN衬底的清洗方法
公开(公告)号：US07387989B2
公开(公告)日：2008-06-17
申请号：US11148239
申请日：2005-06-09
申请人： Tomoki Uemura , Keiji Ishibashi , Shinsuke Fujiwara , Hideaki Nakahata
发明人： Tomoki Uemura , Keiji Ishibashi , Shinsuke Fujiwara , Hideaki Nakahata
IPC分类号： H01L21/302
CPC分类号： C30B33/00 , Y10T428/21
摘要： An AlxGayIn1-x-yN substrate in which particles having a grain size of at least 0.2 μm on a surface of the AlxGayIn1-x-yN substrate are at most 20 in number when a diameter of the AlxGayIn1-x-yN substrate is two inches, and a cleaning method with which the AlxGayIn1-x-yN substrate can be obtained are provided. Further, an AlxGayIn1-x-yN substrate in which, in a photoelectron spectrum of a surface of the AlxGayIn1-x-yN substrate by X-ray photoelectron spectroscopy with a detection angle of 10°, a ratio between a peak area of C1s electrons and a peak area of N1s electrons (C1s electron peak area/N1s electron peak area) is at most 3, and a cleaning method with which the AlxGayIn1-x-yN substrate can be obtained are provided. Still further, an AlN substrate in which, in a photoelectron spectrum of a surface of the AlN substrate by X-ray photoelectron spectroscopy with a detection angle of 10°, a ratio between a peak area of Al2s electrons and a peak area of N1s electrons (Al2s electron peak area/N1s electron peak area) is at most 0.65 and a cleaning method with which the AlN substrate can be obtained are provided.
摘要翻译：在其中Al的表面上具有至少0.2μm的晶粒尺寸的颗粒的Al x N y N y N y 在1-xy N衬底中，当Al x N 2的直径为至多20个数量时，在1-xy N衬底中的Ga 2 y是两英寸，并且其中Al x Ga y Y y >可以获得在1-xy N衬底中。此外，在Al-N-N基底中，在Al 2 O 3的表面的光电子光谱中，通过X射线光电子能谱检测角度为10°，在1-xy N衬底中，峰面积C < SUB> 1s电子和N 1s电子的峰面积（C 1s电子峰面积/ N 1s电子峰面积）至多为3，并且可以获得可以获得Al x N y Na y In 1-xy N衬底的清洁方法。此外，AlN基板，其中，通过X射线光电子能谱法测定AlN基板的表面的光电子光谱，检测角度为10°，Al 2基板的峰面积电子和N 1s电子的峰面积（Al 2 S 3电子峰面积/ N 1s电子峰面积）为0.65以下，清洗提供了可以获得AlN衬底的方法。

72. 发明授权

US06661152B2 Diamond substrate for surface acoustic wave device, and surface acoustic wave device 失效
标题翻译：表面声波装置用金刚石基板，表面声波装置
公开(公告)号：US06661152B2
公开(公告)日：2003-12-09
申请号：US10264264
申请日：2002-10-04
申请人： Keiji Ishibashi , Takahiro Imai , Tomoki Uemura , Daichi Kawaguchi , Hideaki Nakahata , Satoshi Fujii
发明人： Keiji Ishibashi , Takahiro Imai , Tomoki Uemura , Daichi Kawaguchi , Hideaki Nakahata , Satoshi Fujii
IPC分类号： H03H925
CPC分类号： H03H9/02582
摘要： A diamond film is deposited in the thickness of 20 &mgr;m on a silicon wafer 0.8 mm thick by filament CVD. Here the hydrogen content of the diamond film is adjusted in the range of not less than 1% nor more than 5% in atomic percent. By mechanical polishing with a grinding wheel including diamond abrasives, the diamond film is smoothed so that the arithmetic mean roughness (Ra) of the surface thereof becomes not more than 20 nm.
摘要翻译：通过灯丝CVD在0.8mm厚的硅晶片上沉积厚度为20μm的金刚石膜。这里，将金刚石膜的氢含量调整为原子百分比为1％以上5％以下的范围。通过用包括金刚石磨料的砂轮进行机械抛光，使金刚石膜平滑，使得其表面的算术平均粗糙度（Ra）不超过20nm。

73. 发明授权

US6025636A Surface acoustic wave device incorporating single crystal LiNbO.sub.3 失效
标题翻译：结合单晶LiNbO3的表面声波器件
公开(公告)号：US6025636A
公开(公告)日：2000-02-15
申请号：US951615
申请日：1997-10-16
申请人： Hideaki Nakahata , Masashi Narita , Kenjiro Higaki , Satoshi Fujii , Hiroyuki Kitabayashi , Shin-ichi Shikata
发明人： Hideaki Nakahata , Masashi Narita , Kenjiro Higaki , Satoshi Fujii , Hiroyuki Kitabayashi , Shin-ichi Shikata
IPC分类号： H03H9/02 , H01L29/82
CPC分类号： H03H9/02582
摘要： A surface acoustic wave device includes at least diamond, a single crystal LiNbO.sub.3 layer formed on the diamond, and an interdigital transducer formed in contact with the LiNbO.sub.3 layer and uses a surface acoustic wave (wavelength: .lambda..sub.n .mu.m) in an nth-order mode (n=1 or 2). When the thickness of the LiNbO.sub.3 layer is t.sub.1 (.mu.m), kh.sub.1 =2.pi.(t.sub.1 /.lambda..sub.n) and the cut orientation (.theta., .PHI., and .psi. represented by an Eulerian angle representation) with respect to the crystallographic fundamental coordinate system of the LiNbO.sub.3 layer are selected from values within specific ranges. Consequently, a surface acoustic wave device which increases the propagation velocity (V) of a surface acoustic wave and improves the electromechanical coupling coefficient (K.sup.2) is realized.
摘要翻译：表面声波装置至少包括金刚石，形成在金刚石上的单晶LiNbO 3层和与LiNbO 3层接触形成的叉指换能器，并使用n阶的表面声波（波长：λnμm）模式（n = 1或2）。当LiNbO 3层的厚度为t1（μm）时，相对于晶体基础坐标系，kh1 =2π（t1 /λn）和切割取向（θ，PHI和由欧拉角表示的psi）的LiNbO 3层选自特定范围内的值。因此，实现了提高声表面波的传播速度（V）并提高机电耦合系数（K2）的声表面波装置。

74. 发明授权

US5891557A Surface acoustic wave device and diamond base material for the same 失效
公开(公告)号：US5891557A
公开(公告)日：1999-04-06
申请号：US839613
申请日：1997-04-15
申请人： Shin-ichi Shikata , Hideaki Nakahata , Kenjiro Higaki , Satoshi Fujii , Akihiro Hachigo
发明人： Shin-ichi Shikata , Hideaki Nakahata , Kenjiro Higaki , Satoshi Fujii , Akihiro Hachigo
IPC分类号： H03H3/08 , H03H9/02 , H03H9/145 , H03H9/25 , H03H9/64
CPC分类号： H03H9/6436 , H03H3/08 , H03H9/02582 , H03H9/6433 , H03H9/6466 , Y10T428/24802 , Y10T428/24926 , Y10T428/24942 , Y10T428/24975 , Y10T428/265 , Y10T428/30
摘要： A diamond base material for surface acoustic wave device, which includes: a low-resistivity base material, and a high-resistivity diamond layer having a thickness of 5-50 .mu.m disposed on the low-resistivity base material.

75. 发明授权

US5783896A Diamond-Zn0 surface acoustic wave device 失效
标题翻译： Diamond-Zn0表面声波装置
公开(公告)号：US5783896A
公开(公告)日：1998-07-21
申请号：US791894
申请日：1997-01-31
申请人： Hideaki Nakahata , Kenjiro Higaki , Satoshi Fujii , Hiroyuki Kitabayashi , Shin-ichi Shikata
发明人： Hideaki Nakahata , Kenjiro Higaki , Satoshi Fujii , Hiroyuki Kitabayashi , Shin-ichi Shikata
IPC分类号： H03H9/02 , H03H9/10 , H03H9/145
CPC分类号： H03H9/02582
摘要： A first surface acoustic wave device for 2nd mode surface acoustic wave of a wavelength .lambda. (.mu.m) according to the present invention is a SAW device of "type A" device shown in FIG. 6A, wherein a parameter kh3=2.pi.(t.sub.A /.lambda.) is: 0.033.ltoreq.kh3.ltoreq.0.099, and wherein a parameter kh1=2.pi.(t.sub.z /.lambda.) and a parameter kh2=2.pi.(t.sub.s /.lambda.) are given within a region ABCDEFGHIJKLA in a two-dimensional Cartesin coordinate graph of FIG. 1.
摘要翻译：根据本发明的波长λ（μm）的第二模式表面声波的第一表面声波装置是图1所示的“A型”装置的SAW装置。其中参数kh3 =2π（tA /λ）为：0.033≤kh3

76. 发明授权

US5440189A Surface acoustic wave device 失效
标题翻译：表面声波装置
公开(公告)号：US5440189A
公开(公告)日：1995-08-08
申请号：US036259
申请日：1993-03-24
申请人： Hideaki Nakahata , Naoji Funimori
发明人： Hideaki Nakahata , Naoji Funimori
IPC分类号： G06G7/195 , H03F13/00 , H03H9/02 , H03H9/68 , H01L41/08
CPC分类号： G06G7/195 , H03F13/00 , H03H9/02976 , H03H9/68
摘要： Surface acoustic eave devices making use of the interaction between surface acoustic wave and carriers include at least a semiconductor part, a piezoelectric layer and an intermediate insulating film. The devices of this invention include diamond or diamond-like carbon as the insulating film in contact with the piezoelectric layer. Since diamond or diamond-like carbon has the highest sound velocity, the surface acoustic wave velocity is extremely high in the piezoelectric layer in contact with diamond or diamond-like carbon. The high surface acoustic wave velocity alleviates the need of producing fine interdigital transducers. This invention is applicable to surface acoustic wave phase-shifters, surface acoustic amplifiers and surface acoustic convolvers.
摘要翻译：利用表面声波和载流子之间的相互作用的表面声檐装置至少包括半导体部分，压电层和中间绝缘膜。本发明的装置包括金刚石或类金刚石碳作为与压电层接触的绝缘膜。由于金刚石或类金刚石碳具有最高的声速，因此在与金刚石或类金刚石碳接触的压电层中，表面声波速度非常高。高表面声波速度减轻了产生精细叉指式换能器的需要。本发明适用于声表面波移相器，声表面放大器和表面声音卷积器。

77. 发明授权

US5373171A Thin film single crystal substrate 失效
标题翻译：薄膜单晶基板
公开(公告)号：US5373171A
公开(公告)日：1994-12-13
申请号：US165734
申请日：1988-03-09
申请人： Takahiro Imai , Naoji Fujimori , Hideaki Nakahata
发明人： Takahiro Imai , Naoji Fujimori , Hideaki Nakahata
IPC分类号： H01L21/20 , H01L21/36 , H01L27/10
CPC分类号： H01L21/02376 , H01L21/02444 , H01L21/02521 , H01L21/02529 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , Y10S438/931
摘要： A thin film single crystal substrate useful in the production of a semiconductor, comprising a base substrate made of single crystal diamond and at least one thin film of a single crystal of a material selected from the group consisting of silicon carbide, silicon, boron nitride, gallium nitride, indium nitride, aluminum nitride, boron phosphide, cadmium selenide, germanium, gallium arsenide, gallium phosphide, indium phosphide, gallium antimonide, indium arsenide, indium antimonide, aluminum phosphide, aluminum arsenide, aluminum antimonide, cadmium telluride, mercury sulfide, zinc oxide, zinc sulfide, zinc selenide and zinc telluride, and optionally an intermediate layer between the base substrate and the thin film of single crystal, which optionally comprises an intermediate layer between the base substrate and the thin film of single crystal.
摘要翻译：一种可用于制造半导体的薄膜单晶衬底，包括由单晶金刚石制成的基底衬底和至少一种选自碳化硅，硅，氮化硼等的材料的单晶薄膜，氮化镓，氮化铟，氮化铝，磷化硼，硒化镉，锗，砷化镓，磷化镓，磷化铟，锑化锑，砷化铟，锑化锑，磷化铝，砷化铝，锑化锑，碲化镉，氧化锌，硫化锌，硒化锌和碲化锌，以及任选地在基底衬底和单晶薄膜之间的中间层，其任选地包括在基底衬底和单晶薄膜之间的中间层。

78. 发明授权

US5221870A Surface acoustic wave device 失效
标题翻译：表面声波装置
公开(公告)号：US5221870A
公开(公告)日：1993-06-22
申请号：US767624
申请日：1991-09-30
申请人： Hideaki Nakahata , Naoji Fujimori
发明人： Hideaki Nakahata , Naoji Fujimori
IPC分类号： G06G7/195 , H03F13/00 , H03H9/02 , H03H9/68
CPC分类号： H03H9/68 , G06G7/195 , H03F13/00 , H03H9/02976
摘要： Surface acoustic wave devices making use of the interaction between surface acoustic wave and carriers include at least a semiconductor part, a piezoelectric layer and an intermediate insulating film. The devices of this invention include diamond or diamond-like carbon as the insulating film in contact with the piezoelectric layer. Since diamond or diamond-like carbon has the highest sound velocity, the surface acoustic wave velocity is extremely high in the piezoelectric layer in contact with diamond or diamond-like carbon. The high surface acoustic wave velocity alleviates the need of producing fine inter digital transducers. This invention is applicable to surface acoustic wave phase-shifters, surface acoustic amplifiers and surface acoustic convolvers.
摘要翻译：利用声表面波和载流子之间的相互作用的表面声波装置至少包括半导体部分，压电层和中间绝缘膜。本发明的装置包括金刚石或类金刚石碳作为与压电层接触的绝缘膜。由于金刚石或类金刚石碳具有最高的声速，因此在与金刚石或类金刚石碳接触的压电层中，表面声波速度非常高。高表面声波速度减轻了生产精细的数字间换能器的需要。本发明适用于声表面波移相器，声表面放大器和表面声音卷积器。

79. 发明授权

US08921829B2 Light receiving element, light receiving element array, hybrid-type detecting device, optical sensor device, and method for producing light receiving element array 有权
标题翻译：光接收元件，光接收元件阵列，混合型检测装置，光学传感器装置和用于制造光接收元件阵列的方法
公开(公告)号：US08921829B2
公开(公告)日：2014-12-30
申请号：US13520007
申请日：2011-03-10
申请人： Yasuhiro Iguchi , Hiroshi Inada , Youichi Nagai , Hideaki Nakahata , Katsushi Akita , Takashi Ishizuka , Kei Fujii
发明人： Yasuhiro Iguchi , Hiroshi Inada , Youichi Nagai , Hideaki Nakahata , Katsushi Akita , Takashi Ishizuka , Kei Fujii
IPC分类号： H01L29/06 , H01L27/146
CPC分类号： H01L27/1464 , H01L27/14652 , H01L27/14694
摘要： The present invention provides a light receiving element array etc., having a high light-reception sensitivity in the near-infrared region, an optical sensor device, and a method for producing the light receiving element array. A light receiving element array 55 includes an n-type buffer layer 2 disposed on an InP substrate 1, an absorption layer 3 having a type-II MQW, a contact layer 5 disposed on the absorption layer, and a p-type region extending to the n-type buffer layer 2 through the absorption layer 3, wherein the p-type region formed by selective diffusion is separated from the p-type region of an adjacent light receiving element by a region that is not subjected to selective diffusion, and, in the n-type buffer layer, a p-n junction 15 is formed on a crossed face of a p-type carrier concentration of the p-type region and an n-type carrier concentration of the buffer layer.
摘要翻译：本发明提供一种在近红外区域具有高的光接收灵敏度的光接收元件阵列等，光学传感器装置和用于制造光接收元件阵列的方法。光接收元件阵列55包括设置在InP基板1上的n型缓冲层2，具有II型MQW的吸收层3，设置在吸收层上的接触层5和延伸至通过吸收层3的n型缓冲层2，其中通过选择性扩散形成的p型区域通过未经选择性扩散的区域与相邻的光接收元件的p型区域分离，在n型缓冲层中，pn结15形成在p型区域的p型载流子浓度和缓冲层的n型载流子浓度的交叉面上。

80. 发明授权

US08679955B2 Method for forming epitaxial wafer and method for fabricating semiconductor device 有权
标题翻译：用于形成外延晶片的方法和用于制造半导体器件的方法
公开(公告)号：US08679955B2
公开(公告)日：2014-03-25
申请号：US13202419
申请日：2010-02-10
申请人： Shin Hashimoto , Katsushi Akita , Kensaku Motoki , Hideaki Nakahata , Shinsuke Fujiwara
发明人： Shin Hashimoto , Katsushi Akita , Kensaku Motoki , Hideaki Nakahata , Shinsuke Fujiwara
IPC分类号： H01L21/20
CPC分类号： H01L21/0262 , C30B25/02 , C30B29/16 , C30B29/403 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L33/007
摘要： A method for forming an epitaxial wafer is provided as one enabling growth of a gallium nitride based semiconductor with good crystal quality on a gallium oxide region. In step S107, an AlN buffer layer 13 is grown. In step S108, at a time t5, a source gas G1 containing hydrogen, trimethylaluminum, and ammonia, in addition to nitrogen, is supplied into a growth reactor 10 to grow the AlN buffer layer 13 on a primary surface 11a. The AlN buffer layer 13 is so called a low-temperature buffer layer. After a start of film formation of the buffer layer 13, in step S109 supply of hydrogen (H2) is started at a time t6. At the time t6, H2, N2, TMA, and NH3 are supplied into the growth reactor 10. A supply amount of hydrogen is increased between times t6 and t7, and at the time t7 the increase of hydrogen is terminated to supply a constant amount of hydrogen. At the time t7, H2, TMA, and NH3 are supplied into the growth reactor 10.
摘要翻译：提供了一种用于形成外延晶片的方法，其可以在氧化镓区域上使得能够以良好的晶体质量生长氮化镓基半导体。在步骤S107中，生长AlN缓冲层13。在步骤S108中，在时刻t5，将除了氮以外的氢，三甲基铝和氨的原料气G1供给到生长反应器10中，以在主面11a上生长AlN缓冲层13。 AlN缓冲层13被称为低温缓冲层。在开始形成缓冲层13之后，在步骤S109中，在时刻t6开始供给氢（H2）。在时间t6，H2，N2，TMA和NH3被供应到生长反应器10中。在时间t6和t7之间，氢的供应量增加，而在时间t7，氢的增加被终止以提供恒定的量的氢。在时间t7，将H2，TMA和NH3供应到生长反应器10中。

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