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1. 发明授权

US5329208A Surface acoustic wave device and method for producing the same 失效
标题翻译：声表面波装置及其制造方法
公开(公告)号：US5329208A
公开(公告)日：1994-07-12
申请号：US894598
申请日：1992-06-05
申请人： Takahiro Imai , Hideaki Nakahata , Akihiro Hachigo , Naoji Fujimori
发明人： Takahiro Imai , Hideaki Nakahata , Akihiro Hachigo , Naoji Fujimori
IPC分类号： H03H3/08 , H03H9/02 , H03H9/25 , H01L41/18
CPC分类号： H03H9/02582 , H03H9/02622 , Y10T29/42
摘要： A surface acoustic wave device having a diamond layer, a piezoelectric layer and a comb-like electrode, in which the piezoelectric layer and the comb-like electrode are formed on a surface of the diamond layer, which surface has been contacted to a substrate used in the formation of the diamond layer by a vapor phase growth method, which device has high stability and can be produced economically.
摘要翻译：具有金刚石层，压电层和梳状电极的弹性表面波器件，其中压电层和梳状电极形成在金刚石层的表面上，该表面已经与所使用的衬底接触在通过气相生长法形成金刚石层时，该装置具有高稳定性并且可以经济地生产。

2. 发明授权

US5355568A Method of making a surface acoustic wave device 失效
标题翻译：制造表面声波装置的方法
公开(公告)号：US5355568A
公开(公告)日：1994-10-18
申请号：US158415
申请日：1993-11-29
申请人： Takahiro Imai , Hideaki Nakahata , Akihiro Hachigo , Naoji Fujimori
发明人： Takahiro Imai , Hideaki Nakahata , Akihiro Hachigo , Naoji Fujimori
IPC分类号： H03H3/08 , H03H9/02 , H03H9/25 , H01L41/22
CPC分类号： H03H9/02582 , H03H9/02622 , Y10T29/42
摘要： A surface acoustic wave device having a diamond layer, a piezoelectric layer and a comb-like electrode, in which the piezoelectric layer and the comb-like electrode are formed on a surface of the diamond layer, which surface has been contacted to a substrate used in the formation of the diamond layer by a vapor phase growth method, which device has high stability and can be produced economically.
摘要翻译：具有金刚石层，压电层和梳状电极的弹性表面波器件，其中压电层和梳状电极形成在金刚石层的表面上，该表面已经与所使用的衬底接触在通过气相生长法形成金刚石层时，该装置具有高稳定性并且可以经济地生产。

3. 发明授权

US5373171A Thin film single crystal substrate 失效
标题翻译：薄膜单晶基板
公开(公告)号：US5373171A
公开(公告)日：1994-12-13
申请号：US165734
申请日：1988-03-09
申请人： Takahiro Imai , Naoji Fujimori , Hideaki Nakahata
发明人： Takahiro Imai , Naoji Fujimori , Hideaki Nakahata
IPC分类号： H01L21/20 , H01L21/36 , H01L27/10
CPC分类号： H01L21/02376 , H01L21/02444 , H01L21/02521 , H01L21/02529 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , Y10S438/931
摘要： A thin film single crystal substrate useful in the production of a semiconductor, comprising a base substrate made of single crystal diamond and at least one thin film of a single crystal of a material selected from the group consisting of silicon carbide, silicon, boron nitride, gallium nitride, indium nitride, aluminum nitride, boron phosphide, cadmium selenide, germanium, gallium arsenide, gallium phosphide, indium phosphide, gallium antimonide, indium arsenide, indium antimonide, aluminum phosphide, aluminum arsenide, aluminum antimonide, cadmium telluride, mercury sulfide, zinc oxide, zinc sulfide, zinc selenide and zinc telluride, and optionally an intermediate layer between the base substrate and the thin film of single crystal, which optionally comprises an intermediate layer between the base substrate and the thin film of single crystal.
摘要翻译：一种可用于制造半导体的薄膜单晶衬底，包括由单晶金刚石制成的基底衬底和至少一种选自碳化硅，硅，氮化硼等的材料的单晶薄膜，氮化镓，氮化铟，氮化铝，磷化硼，硒化镉，锗，砷化镓，磷化镓，磷化铟，锑化锑，砷化铟，锑化锑，磷化铝，砷化铝，锑化锑，碲化镉，氧化锌，硫化锌，硒化锌和碲化锌，以及任选地在基底衬底和单晶薄膜之间的中间层，其任选地包括在基底衬底和单晶薄膜之间的中间层。

4. 发明授权

US4982243A Schottky contact 失效
标题翻译：肖特基接触
公开(公告)号：US4982243A
公开(公告)日：1991-01-01
申请号：US329825
申请日：1989-03-28
申请人： Hideaki Nakahata , Takahiro Imai , Hiromu Shiomi , Naoji Fujimori
发明人： Hideaki Nakahata , Takahiro Imai , Hiromu Shiomi , Naoji Fujimori
IPC分类号： H01L29/16 , H01L21/205 , H01L29/04 , H01L29/423 , H01L29/47 , H01L29/861 , H01L29/868 , H01L29/872
CPC分类号： H01L33/40 , H01L29/045 , H01L29/47 , H01L29/872 , H01L33/0033 , H01L33/34
摘要： A schottky contact which comprises a single crystal diamond substrate, an epitaxial diamond layer formed on said substrate and a schottky electrode layer formed on said epitaxial diamond layer, wherein said substrate has at least one polished surface which inclines at an angle of not larger than 10.degree. to a (100) plane and said epitaxial diamond layer is formed on said surface, provides a device which has good thermal resistance and environmental resistance and which device can be easily highly integrated.
摘要翻译：一种肖特基接触，其包括单晶金刚石基底，形成在所述基底上的外延金刚石层和形成在所述外延金刚石层上的肖特基电极层，其中所述基底具有至少一个抛光表面，其倾斜不大于10° DEG至（100）面，并且所述外延金刚石层形成在所述表面上，提供具有良好耐热性和耐环境性的器件，并且该器件可以容易地高度集成。

5. 发明授权

US5001452A Semiconducting diamond and process for producing the same 失效
标题翻译：半导体金刚石及其制造方法
公开(公告)号：US5001452A
公开(公告)日：1991-03-19
申请号：US201151
申请日：1988-06-02
申请人： Takahiro Imai , Hideaki Nakahata , Naoji Fujimori
发明人： Takahiro Imai , Hideaki Nakahata , Naoji Fujimori
IPC分类号： C30B25/10 , H01L29/16 , H01L29/167
CPC分类号： H01L29/1602 , C30B25/105 , H01L29/167 , Y10T29/49082
摘要： A semiconducting diamond which contains diamond carbon and at least one dopant element selected from the group consisting of S, Se, and Cl, and a process for producing the same.
摘要翻译：一种含有金刚石碳和选自S，Se和Cl的至少一种掺杂剂元素的半导体金刚石及其制造方法。

6. 发明授权

US4952832A Surface acoustic wave device 失效
标题翻译：表面声波装置
公开(公告)号：US4952832A
公开(公告)日：1990-08-28
申请号：US425956
申请日：1989-10-24
申请人： Takahiro Imai , Hideaki Nakahata , Naoji Fujimori
发明人： Takahiro Imai , Hideaki Nakahata , Naoji Fujimori
IPC分类号： H03H9/02
CPC分类号： H03H9/02582
摘要： A surface acoustic wave device which comprises a piezoelectric layer, a carbonaceous layer which is selected from the group consisting of a diamond layer and a diamond-like carbon layer and formed on at least one surface of the piezoelectric layer, and at least a pair of interdigital transducer electrodes, can be used in an extremely high frequency region.
摘要翻译：一种声表面波器件，包括压电层，选自金刚石层和类金刚石碳层并形成在压电层的至少一个表面上的碳质层，以及至少一对叉指式换能器电极，可用于极高频率区域。

7. 发明授权

US5401544A Method for manufacturing a surface acoustic wave device 失效
标题翻译：声表面波装置的制造方法
公开(公告)号：US5401544A
公开(公告)日：1995-03-28
申请号：US109394
申请日：1993-08-19
申请人： Hideaki Nakahata , Shinichi Shikata , Akihiro Hachigo , Naoji Fujimori
发明人： Hideaki Nakahata , Shinichi Shikata , Akihiro Hachigo , Naoji Fujimori
IPC分类号： H03H3/08 , H03H9/145 , H01L41/08 , B05D3/06 , C23C16/20
CPC分类号： H03H3/08 , H03H9/14538
摘要： A surface acoustic wave device which can operate at a higher frequency range is produced by irradiation with a focused ion beam to produce a narrower electrode width and narrower spacing width between neighboring electrodes in contact with a piezoelectric body, without degrading the reliability of the device. The surface acoustic wave device includes a piezoelectric body 3 and interdigital electrodes 2a and 2b in close contact with the piezoelectric body 3 and formed by using the focused ion beam. In order to increase the frequency of the device, the piezoelectric body 3 may be formed on a substrate 1, for example of diamond.
摘要翻译：可以通过用聚焦离子束照射来产生能够在较高频率范围内工作的表面声波装置，以产生与压电体接触的相邻电极之间的较窄的电极宽度和较窄的间隔宽度，而不会降低装置的可靠性。表面声波装置包括与压电体3紧密接触并通过使用聚焦离子束形成的压电体3和叉指电极2a和2b。为了增加器件的频率，压电体3可以形成在例如金刚石的衬底1上。

8. 发明授权

US5320865A Method of manufacturing a surface acoustic wave device 失效
标题翻译：声表面波装置的制造方法
公开(公告)号：US5320865A
公开(公告)日：1994-06-14
申请号：US947283
申请日：1992-09-16
申请人： Hideaki Nakahata , Shinichi Shikata , Akihiro Hachigo , Naoji Fujimori
发明人： Hideaki Nakahata , Shinichi Shikata , Akihiro Hachigo , Naoji Fujimori
IPC分类号： H03H3/08 , H03H9/02 , H03H9/145 , H01L41/22
CPC分类号： H03H3/08 , H03H9/02582 , Y10T29/42
摘要： A method of manufacturing a surface acoustic wave device which has a smaller insertion loss and which operates at higher frequency than a conventional surface acoustic wave device is provided. The surface acoustic wave device includes a substrate, a diamond layer formed on the substrate, a piezoelectric layer formed on the diamond layer, and electrodes formed on any of the substrate, the diamond layer and the piezoelectric layer. The piezoelectric layer is formed by the laser ablation method. The insertion loss of this acoustic wave device is small even in a high frequency range of several hundreds MHz to GHz. Therefore, the device can be used as a frequency filter, a resonator, a delay line, a convolver, a correlator and the like.
摘要翻译：提供一种制造具有较小的插入损耗并且以比常规的声表面波器件更高的频率工作的声表面波器件的方法。表面声波装置包括基板，形成在基板上的金刚石层，形成在金刚石层上的压电层，以及形成在基板，金刚石层和压电层之一上的电极。压电层通过激光烧蚀法形成。即使在几百MHz至GHz的高频范围内，该声波器件的插入损耗也很小。因此，该装置可以用作频率滤波器，谐振器，延迟线，卷积器，相关器等。

9. 发明授权

US5235236A Surface acoustic wave device 失效
标题翻译：表面声波设备
公开(公告)号：US5235236A
公开(公告)日：1993-08-10
申请号：US937983
申请日：1992-08-28
申请人： Hideaki Nakahata , Shinichi Shikata , Akihiro Hachigo , Naoji Fujimori
发明人： Hideaki Nakahata , Shinichi Shikata , Akihiro Hachigo , Naoji Fujimori
IPC分类号： H03H9/25 , H03H3/08 , H03H9/02
CPC分类号： H03H3/08 , H03H9/02582 , H03H9/02976
摘要： Disclosed herein is a surface acoustic wave device whose characteristics can be stably maintained against temperature changes. The surface acoustic wave device has an insulating diamond layer (2), which is provided thereon with a part (3) defined by a pair of interdigital electrodes (7, 7') and a piezoelectric layer (8), and a thermistor (4) made of semi-conductive diamond. The thermistor (4) quickly detects the temperature of the device.

10. 发明授权

US5294858A Surface acoustic wave device 失效
标题翻译：表面声波装置
公开(公告)号：US5294858A
公开(公告)日：1994-03-15
申请号：US19136
申请日：1993-02-18
申请人： Hideaki Nakahata , Akihiro Hachigo , Shinichi Shikata , Naoji Fujimori
发明人： Hideaki Nakahata , Akihiro Hachigo , Shinichi Shikata , Naoji Fujimori
IPC分类号： H03H9/145 , H03H9/02 , H01L41/04 , H01L41/08 , H01L41/18 , H02N2/00
CPC分类号： H03H9/02582
摘要： Disclosed herein is a surface acoustic wave device employing diamond, which has an operation frequency in a range of several hundred MHz to several GHz, a high propagation velocity and a large electromechanical coefficient. This surface acoustic wave comprises a substrate, a diamond layer which is formed on the substrate, a ZnO layer which is formed on the diamond layer, and interdigital electrodes which are formed on the ZnO layer, and utilizes a second order mode of a surface acoustic wave which is excited in a structure satisfying (2.pi..H/.lambda.)=0.9 to 2.3 where H represents the thickness of the ZnO layer and .lambda. represents the wavelength of the surface acoustic wave. This surface acoustic wave device can be used in an extremely high frequency range, whereby the same is applicable to a resonator, a delay line, a signal processing device, a convolver, a correlator or the like in addition to a filter.
摘要翻译：本发明公开了一种采用金刚石的弹性表面波器件，其工作频率范围为数百MHz至数GHz，传播速度高，机电系数大。该表面声波包括衬底，形成在衬底上的金刚石层，形成在金刚石层上的ZnO层和形成在ZnO层上的叉指电极，并且利用表面声学的二阶模式在满足（2（pi）·H /（λ））= 0.9〜2.3的结构中激发的波，其中H表示ZnO层的厚度，（λ）表示声表面波的波长。该声表面波装置可以在极高的频率范围内使用，除了滤波器之外，其也适用于谐振器，延迟线，信号处理装置，卷积器，相关器等。

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