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1. 发明授权

US06661152B2 Diamond substrate for surface acoustic wave device, and surface acoustic wave device 失效
标题翻译：表面声波装置用金刚石基板，表面声波装置
公开(公告)号：US06661152B2
公开(公告)日：2003-12-09
申请号：US10264264
申请日：2002-10-04
申请人： Keiji Ishibashi , Takahiro Imai , Tomoki Uemura , Daichi Kawaguchi , Hideaki Nakahata , Satoshi Fujii
发明人： Keiji Ishibashi , Takahiro Imai , Tomoki Uemura , Daichi Kawaguchi , Hideaki Nakahata , Satoshi Fujii
IPC分类号： H03H925
CPC分类号： H03H9/02582
摘要： A diamond film is deposited in the thickness of 20 &mgr;m on a silicon wafer 0.8 mm thick by filament CVD. Here the hydrogen content of the diamond film is adjusted in the range of not less than 1% nor more than 5% in atomic percent. By mechanical polishing with a grinding wheel including diamond abrasives, the diamond film is smoothed so that the arithmetic mean roughness (Ra) of the surface thereof becomes not more than 20 nm.
摘要翻译：通过灯丝CVD在0.8mm厚的硅晶片上沉积厚度为20μm的金刚石膜。这里，将金刚石膜的氢含量调整为原子百分比为1％以上5％以下的范围。通过用包括金刚石磨料的砂轮进行机械抛光，使金刚石膜平滑，使得其表面的算术平均粗糙度（Ra）不超过20nm。

2. 发明授权

US07387989B2 AlxGayInl−x−yN substrate, cleaning method of AlxGayInl−x−yN substrate, AlN substrate, and cleaning method of AlN substrate 有权
标题翻译： AlxGayInl-x-yN衬底，AlxGayInl-x-yN衬底的清洗方法，AlN衬底和AlN衬底的清洗方法
公开(公告)号：US07387989B2
公开(公告)日：2008-06-17
申请号：US11148239
申请日：2005-06-09
申请人： Tomoki Uemura , Keiji Ishibashi , Shinsuke Fujiwara , Hideaki Nakahata
发明人： Tomoki Uemura , Keiji Ishibashi , Shinsuke Fujiwara , Hideaki Nakahata
IPC分类号： H01L21/302
CPC分类号： C30B33/00 , Y10T428/21
摘要： An AlxGayIn1-x-yN substrate in which particles having a grain size of at least 0.2 μm on a surface of the AlxGayIn1-x-yN substrate are at most 20 in number when a diameter of the AlxGayIn1-x-yN substrate is two inches, and a cleaning method with which the AlxGayIn1-x-yN substrate can be obtained are provided. Further, an AlxGayIn1-x-yN substrate in which, in a photoelectron spectrum of a surface of the AlxGayIn1-x-yN substrate by X-ray photoelectron spectroscopy with a detection angle of 10°, a ratio between a peak area of C1s electrons and a peak area of N1s electrons (C1s electron peak area/N1s electron peak area) is at most 3, and a cleaning method with which the AlxGayIn1-x-yN substrate can be obtained are provided. Still further, an AlN substrate in which, in a photoelectron spectrum of a surface of the AlN substrate by X-ray photoelectron spectroscopy with a detection angle of 10°, a ratio between a peak area of Al2s electrons and a peak area of N1s electrons (Al2s electron peak area/N1s electron peak area) is at most 0.65 and a cleaning method with which the AlN substrate can be obtained are provided.
摘要翻译：在其中Al的表面上具有至少0.2μm的晶粒尺寸的颗粒的Al x N y N y N y 在1-xy N衬底中，当Al x N 2的直径为至多20个数量时，在1-xy N衬底中的Ga 2 y是两英寸，并且其中Al x Ga y Y y >可以获得在1-xy N衬底中。此外，在Al-N-N基底中，在Al 2 O 3的表面的光电子光谱中，通过X射线光电子能谱检测角度为10°，在1-xy N衬底中，峰面积C < SUB> 1s电子和N 1s电子的峰面积（C 1s电子峰面积/ N 1s电子峰面积）至多为3，并且可以获得可以获得Al x N y Na y In 1-xy N衬底的清洁方法。此外，AlN基板，其中，通过X射线光电子能谱法测定AlN基板的表面的光电子光谱，检测角度为10°，Al 2基板的峰面积电子和N 1s电子的峰面积（Al 2 S 3电子峰面积/ N 1s电子峰面积）为0.65以下，清洗提供了可以获得AlN衬底的方法。

3. 发明申请

US20080299375A1 ALxGayIn1-x-yN substrate, cleaning method of AIxGayIn1-x-yN substrate, AIN substrate, and cleaning method of AIN substrate 审中-公开
标题翻译： AlxGayIn1-x-yN基板，AlxGayIn1-x-yN基板的清洗方法，AIN基板和AIN基板的清洗方法
公开(公告)号：US20080299375A1
公开(公告)日：2008-12-04
申请号：US12149776
申请日：2008-05-08
申请人： Tomoki Uemura , Keiji Ishibashi , Shinsuke Fujiwara , Hideaki Nakahata
发明人： Tomoki Uemura , Keiji Ishibashi , Shinsuke Fujiwara , Hideaki Nakahata
IPC分类号： C01B21/072 , B32B9/00
CPC分类号： C30B33/00 , Y10T428/21
摘要： An AlxGayIn1-x-yN substrate in which particles having a grain size of at least 0.2 μm on a surface of the AlxGayIn1-x-yN substrate are at most 20 in number when a diameter of the AlxGayIn1-x-yN substrate is two inches, and a cleaning method with which the AlxGayIn1-x-yN substrate can be obtained are provided. Further, an AlxGayIn1-x-yN substrate in which, in a photoelectron spectrum of a surface of the AlxGayIn1-x-yN substrate by X-ray photoelectron spectroscopy with a detection angle of 10°, a ratio between a peak area of C1s electrons and a peak area of N1s electrons (C1s electron peak area/N1s electron peak area) is at most 3, and a cleaning method with which the AlxGayIn1-x-yN substrate can be obtained are provided. Still further, an AlN substrate in which, in a photoelectron spectrum of a surface of the AlN substrate by X-ray photoelectron spectroscopy with a detection angle of 10°, a ratio between a peak area of Al2s electrons and a peak area of N1s electrons (Al2s electron peak area/N1s electron peak area) is at most 0.65 and a cleaning method with which the AlN substrate can be obtained are provided.
摘要翻译：当AlxGayIn1-x-yN基板的直径为2英寸时，AlxGayIn1-x-yN基板在AlxGayIn1-x-yN基板的表面上具有至少0.2μm的粒度的粒子的数目为20个以上的Al x Ga y In 1-x-y N基板以及可以获得Al x Ga y In 1-x-y N基板的清洗方法。此外，AlxGayIn1-x-yN衬底，其中，通过X射线光电子能谱法测定Al x Ga y In 1-x-y N衬底的表面的光电子光谱，检测角度为10°时，C1s电子的峰面积之比并且N1s电子的峰面积（C1s电子峰面积/ N1s电子峰面积）为3以下，提供了可以获得Al x Ga y In 1-x-y N基板的清洗方法。另外，AlN基板，其中，通过X射线光电子能谱法测定AlN基板的表面的光电子光谱，检测角度为10°，Al2s电子的峰面积与N1s电子的峰面积之比（Al 2 S电子峰面积/ N1s电子峰面积）为0.65以下，设置可获得AlN基板的清洗方法。

4. 发明申请

US20060003134A1 AlxGayIn1-x-yN substrate, cleaning method of AlxGayIn1-x-yN substrate, AIN substrate, and cleaning method of AIN substrate 有权
标题翻译： AlxGayIn1-x-yN基板，AlxGayIn1-x-yN基板的清洗方法，AIN基板和AIN基板的清洗方法
公开(公告)号：US20060003134A1
公开(公告)日：2006-01-05
申请号：US11148239
申请日：2005-06-09
申请人： Tomoki Uemura , Keiji Ishibashi , Shinsuke Fujiwara , Hideaki Nakahata
发明人： Tomoki Uemura , Keiji Ishibashi , Shinsuke Fujiwara , Hideaki Nakahata
IPC分类号： B32B9/00
CPC分类号： C30B33/00 , Y10T428/21
摘要： An AlxGayIn1-x-yN substrate in which particles having a grain size of at least 0.2 μm on a surface of the AlxGayIn1-x-yN substrate are at most 20 in number when a diameter of the AlxGayIn1-x-yN substrate is two inches, and a cleaning method with which the AlxGayIn1-x-yN substrate can be obtained are provided. Further, an AlxGayIn1-x-yN substrate in which, in a photoelectron spectrum of a surface of the AlxGayIn1-x-yN substrate by X-ray photoelectron spectroscopy with a detection angle of 10°, a ratio between a peak area of C1s electrons and a peak area of N1s electrons (C1s electron peak area/N1s electron peak area) is at most 3, and a cleaning method with which the AlxGayIn1-x-yN substrate can be obtained are provided. Still further, an AlN substrate in which, in a photoelectron spectrum of a surface of the AlN substrate by X-ray photoelectron spectroscopy with a detection angle of 10°, a ratio between a peak area of Al2s electrons and a peak area of N1s electrons (Al2s electron peak area/N1s electron peak area) is at most 0.65 and a cleaning method with which the AlN substrate can be obtained are provided.
摘要翻译：在其中Al的表面上具有至少0.2μm的晶粒尺寸的颗粒的Al x N y N y N y 在1-xy N衬底中，当Al x N 2的直径为至多20个数量时，在1-xy N衬底中的Ga 2 y是两英寸，并且其中Al x Ga y Y y >可以获得在1-xy N衬底中。此外，在Al-N-N基底中，在Al 2 O 3的表面的光电子光谱中，通过X射线光电子能谱检测角度为10°，在1-xy N衬底中，峰面积C < SUB> 1s电子和N 1s电子的峰面积（C 1s电子峰面积/ N 1s电子峰面积）至多为3，并且可以获得可以获得Al x N y Na y In 1-xy N衬底的清洁方法。此外，AlN基板，其中，通过X射线光电子能谱法测定AlN基板的表面的光电子光谱，检测角度为10°，Al 2基板的峰面积电子和N 1s电子的峰面积（Al 2 S 3电子峰面积/ N 1s电子峰面积）为0.65以下，清洗提供了可以获得AlN衬底的方法。

5. 发明授权

US5959389A Diamond-ZnO surface acoustic wave device 失效
标题翻译：金刚石 - ZnO表面声波装置
公开(公告)号：US5959389A
公开(公告)日：1999-09-28
申请号：US964469
申请日：1997-11-04
申请人： Hideaki Nakahata , Tomoki Uemura , Kenjiro Higaki , Satoshi Fujii , Hiroyuki Kitabayashi , Shin-ichi Shikata
发明人： Hideaki Nakahata , Tomoki Uemura , Kenjiro Higaki , Satoshi Fujii , Hiroyuki Kitabayashi , Shin-ichi Shikata
IPC分类号： H03H9/02 , H03H9/10 , H03H9/145
CPC分类号： H03H9/02582
摘要： A first surface acoustic wave device for 2nd mode surface acoustic wave of a wavelength .lambda. (.mu.m) according to the present invention is a SAW device of "type A" device shown in FIG. 6A, wherein a parameter kh3=2.pi.(t.sub.A /.lambda.) is: 0.033.ltoreq.kh3.ltoreq.0.099, and wherein a parameter kh1=2.pi.(t.sub.Z /.lambda.) and a parameter kh2=2.pi.(t.sub.S /.lambda.) are given within a region ABCDEFGHIJKLA in a two-dimensional Cartesin coordinate graph of FIG. 1.
摘要翻译：根据本发明的波长λ（μm）的第二模式表面声波的第一表面声波装置是图1所示的“A型”装置的SAW装置。其中参数kh3 =2π（tA /λ）为：0.033≤kh3

6. 发明授权

US06320296B1 Diamond wafer, method of estimating a diamond wafer and diamond surface acoustic wave device 失效
公开(公告)号：US06320296B1
公开(公告)日：2001-11-20
申请号：US09825887
申请日：2001-04-05
申请人： Satoshi Fujii , Yuichiro Seki , Kentaro Yoshida , Hideaki Nakahata , Kenjiro Higaki , Hiroyuki Kitabayashi , Tomoki Uemura , Shin-ichi Shikata
发明人： Satoshi Fujii , Yuichiro Seki , Kentaro Yoshida , Hideaki Nakahata , Kenjiro Higaki , Hiroyuki Kitabayashi , Tomoki Uemura , Shin-ichi Shikata
IPC分类号： H10L4108
CPC分类号： H03H3/08 , H03H9/02582 , Y10T428/24479 , Y10T428/24917 , Y10T428/24975 , Y10T428/265 , Y10T428/30 , Y10T428/31678
摘要： Surfaces of diamond crystals are examined by coating the surfaces with thin metal films, launching laser beams to the diamond surfaces in a slanting angle, detecting defects and particles on the diamond surfaces by the scattering of beams and counting the defects and particles by a laser scanning surface defect detection apparatus. Diamond SAW devices should be made on the diamond films or bulks with the defect density less than 300 particles cm−2. Preferably, the diamond surfaces should have roughness less than Ra20 nm. Diamond SAW filters can be produced by depositing a piezoelectric film and making interdigital transducers on the low-defect density diamond crystals.

7. 发明授权

US06448688B2 Hard carbon film and surface-acoustic-wave substrate 失效
标题翻译：硬碳膜和表面声波衬底
公开(公告)号：US06448688B2
公开(公告)日：2002-09-10
申请号：US09739210
申请日：2000-12-19
申请人： Satoshi Fujii , Tomoki Uemura , Yuichiro Seki , Hideaki Nakahata , Shinichi Shikata
发明人： Satoshi Fujii , Tomoki Uemura , Yuichiro Seki , Hideaki Nakahata , Shinichi Shikata
IPC分类号： H01L4108
CPC分类号： C23C16/26 , H03H3/08 , H03H9/02582 , Y10T428/30
摘要： The invention offers a hard carbon film and a SAW substrate that are easy to fabricate or low in manufacturing cost while virtually maintaining the quality that affects the important properties of a device that comprises the hard carbon film or the SAW substrate. The hard carbon film comprises a composite film of graphite-like diamond and carbon clusters; the composite film has a continuous crystal structure.
摘要翻译：本发明提供容易制造或制造成本低的硬碳膜和SAW基板，同时实质上保持影响包括硬碳膜或SAW基板的装置的重要性能的质量。硬碳膜包括石墨状金刚石和碳簇的复合膜; 复合膜具有连续的晶体结构。

8. 发明授权

US06356006B1 Diamond wafer, method of estimating a diamond wafer and diamond surface acoustic wave device 失效
标题翻译：金刚石晶片，估计金刚石晶片和金刚石表面声波器件的方法
公开(公告)号：US06356006B1
公开(公告)日：2002-03-12
申请号：US09543415
申请日：2000-04-05
申请人： Satoshi Fujii , Yuichiro Seki , Kentaro Yoshida , Hideaki Nakahata , Kenjiro Higaki , Hiroyuki Kitabayashi , Tomoki Uemura , Shin-ichi Shikata
发明人： Satoshi Fujii , Yuichiro Seki , Kentaro Yoshida , Hideaki Nakahata , Kenjiro Higaki , Hiroyuki Kitabayashi , Tomoki Uemura , Shin-ichi Shikata
IPC分类号： B32B3300
CPC分类号： H03H3/08 , H03H9/02582 , Y10T428/24479 , Y10T428/24917 , Y10T428/24975 , Y10T428/265 , Y10T428/30 , Y10T428/31678
摘要： Surfaces of diamond crystals are examined by coating the surfaces with thin metal films, launching laser beams to the diamond surfaces in a slanting angle, detecting defects and particles on the diamond surfaces by the scattering of beams and counting the defects and particles by a laser scanning surface defect detection apparatus. Diamond SAW devices should be made on the diamond films or bulks with the defect density less than 300 particles cm−2. Preferably, the diamond,surfaces should have roughness less than Ra20 nm. Diamond SAW filters can be produced by depositing a piezoelectric film and making interdigital transducers on the low-defect density diamond crystals.
摘要翻译：通过用薄金属膜涂覆表面来检查金刚石晶体的表面，以倾斜的角度将激光束发射到金刚石表面，通过光束的散射检测金刚石表面上的缺陷和颗粒，并通过激光扫描计算缺陷和颗粒表面缺陷检测装置。金刚石SAW器件应在缺陷密度小于300颗粒cm-2的金刚石膜或块上制成。优选地，金刚石，表面应具有小于Ra20nm的粗糙度。金刚石SAW滤波器可以通过沉积压电膜并在低缺陷密度的金刚石晶体上形成叉指式换能器来制造。

9. 发明授权

US06416865B1 Hard carbon film and surface acoustic-wave substrate 失效
标题翻译：硬碳膜和表面声波衬底
公开(公告)号：US06416865B1
公开(公告)日：2002-07-09
申请号：US09400193
申请日：1999-09-21
申请人： Satoshi Fujii , Tomoki Uemura , Yuichiro Seki , Hideaki Nakahata , Shinichi Shikata
发明人： Satoshi Fujii , Tomoki Uemura , Yuichiro Seki , Hideaki Nakahata , Shinichi Shikata
IPC分类号： H03H8165
CPC分类号： C23C16/26 , H03H3/08 , H03H9/02582 , Y10T428/30
摘要： The invention offers a hard carbon film and a SAW substrate that are easy to fabricate or low in manufacturing cost while virtually maintaining the quality that affects the important properties of a device that comprises the hard carbon film or the SAW substrate. The hard carbon film comprises a composite film of graphite-like diamond and carbon clusters; the composite film has a continuous crystal structure.
摘要翻译：本发明提供容易制造或制造成本低的硬碳膜和SAW基板，同时实质上保持影响包括硬碳膜或SAW基板的装置的重要性能的质量。硬碳膜包括石墨状金刚石和碳簇的复合膜; 复合膜具有连续的晶体结构。

10. 发明授权

US06210780B1 Diamond wafer, method of estimating a diamond wafer and diamond surface acoustic wave device 有权
标题翻译：金刚石晶片，估计金刚石晶片和金刚石表面声波器件的方法
公开(公告)号：US06210780B1
公开(公告)日：2001-04-03
申请号：US09166840
申请日：1998-10-06
申请人： Satoshi Fujii , Yuichiro Seki , Kentaro Yoshida , Hideaki Nakahata , Kenjiro Higaki , Hiroyuki Kitabayashi , Tomoki Uemura , Shin-ichi Shikata
发明人： Satoshi Fujii , Yuichiro Seki , Kentaro Yoshida , Hideaki Nakahata , Kenjiro Higaki , Hiroyuki Kitabayashi , Tomoki Uemura , Shin-ichi Shikata
IPC分类号： H01L4118
CPC分类号： H03H3/08 , H03H9/02582 , Y10T428/24479 , Y10T428/24917 , Y10T428/24975 , Y10T428/265 , Y10T428/30 , Y10T428/31678
摘要： Surfaces of diamond crystals are examined by coating the surfaces with thin metal films, launching laser beams to the diamond surfaces in a slanting angle, detecting defects and particles on the diamond surfaces by the scattering of beams and counting the defects and particles by a laser scanning surface defect detection apparatus. Diamond SAW devices should be made on the diamond films or bulks with the defect density less than 300 particles cm−2. Preferably, the diamond surfaces should have roughness less than Ra20 nm. Diamond SAW filters can be produced by depositing a piezoelectric film and making interdigital transducers on the low-defect density diamond crystals.
摘要翻译：通过用薄金属膜涂覆表面来检查金刚石晶体的表面，以倾斜的角度将激光束发射到金刚石表面，通过光束的散射检测金刚石表面上的缺陷和颗粒，并通过激光扫描计算缺陷和颗粒表面缺陷检测装置。金刚石SAW器件应在缺陷密度小于300颗粒cm-2的金刚石膜或块上制成。优选地，金刚石表面应具有小于Ra20nm的粗糙度。金刚石SAW滤波器可以通过沉积压电膜并在低缺陷密度的金刚石晶体上形成叉指式换能器来制造。

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