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71. 发明申请

US20090104775A1 Method for Forming Tantalum Nitride Film 有权
标题翻译：形成钽氮化物膜的方法
公开(公告)号：US20090104775A1
公开(公告)日：2009-04-23
申请号：US11885345
申请日：2006-03-03
申请人： Narishi Gonohe , Satoru Toyoda , Harunori Ushikawa , Tomoyasu Kondo , Kyuzo Nakamura
发明人： Narishi Gonohe , Satoru Toyoda , Harunori Ushikawa , Tomoyasu Kondo , Kyuzo Nakamura
IPC分类号： H01L21/44
CPC分类号： H01L21/76843 , C23C16/34 , H01L21/28556 , H01L21/76859 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A tantalum nitride film rich in tantalum atoms is formed, according to the CVD technique, by simultaneously introducing a raw gas consisting of a coordination compound constituted by an elemental tantalum (Ta) having a coordinated ligand represented by the general formula: N=(R, R′) (in the formula, R and R′ may be the same or different and each represents an alkyl group having 1 to 6 carbon atoms) and NH3 gas into a film-forming chamber, reacting the raw gas with the NH3 gas and forming a reduced compound having Ta—NH3 on a substrate; and then introducing a hydrogen atom-containing gas into the chamber to thus form a tantalum nitride film rich in tantalum atoms. The resulting tantalum nitride film has a low resistance, low contents of C and N atoms, and a high compositional ratio: Ta/N, can ensure sufficiently high adherence to Cu film and can thus be useful as a barrier film. Moreover, tantalum particles are implanted in the resulting film according to the sputtering technique to thus further enrich the film with tantalum.
摘要翻译：根据CVD技术，通过同时引入由由具有由以下通式表示的配位配位体的元素钽（Ta）构成的配位化合物构成的原料气体，形成钽原子的氮化钽膜：N =（R ，R'）（式中，R和R'可以相同或不同，各自表示碳原子数为1〜6的烷基）和NH 3气体进入成膜室，使原料气与NH 3气体反应并在衬底上形成具有Ta-NH 3的还原化合物; 然后将含氢原子的气体引入到室中，从而形成富含钽原子的氮化钽膜。所得到的氮化钽膜具有低电阻，C原子和N原子含量低，组成比高的Ta / N可以确保对Cu膜的足够高的粘附性，因此可用作阻挡膜。此外，根据溅射技术将钽颗粒注入到所得的膜中，从而进一步用钽富集膜。

72. 发明授权

US06533630B1 Vacuum device and method of manufacturing plasma display device 有权
标题翻译：真空装置及等离子体显示装置的制造方法
公开(公告)号：US06533630B1
公开(公告)日：2003-03-18
申请号：US09579274
申请日：2000-05-26
申请人： Ryuuichi Terajima , Yukio Masuda , Toshiharu Kurauchi , Ken Momono , Yoshio Sunaga , Hidenori Suwa , Kyuzo Nakamura
发明人： Ryuuichi Terajima , Yukio Masuda , Toshiharu Kurauchi , Ken Momono , Yoshio Sunaga , Hidenori Suwa , Kyuzo Nakamura
IPC分类号： H01J926
CPC分类号： H01J9/46
摘要： A vacuum display device for enabling the manufacture of high quality plasma display device with high throughput. A front panel 6 constituting a plasma display device is carried into a film deposition chamber 22; and a MgO thin film is deposited in a vacuum atmosphere. The front panel 6 is then carried into an alignment chamber 11 without being exposed to the atmosphere and aligned with a rear panel 7 that has been subjected to degassing in a vacuum atmosphere. There is no absorption of gas, such as moisture; and the quality of the thin film is not degraded. After alignment, aging processing is carried out without exposure to the atmosphere, followed by gas encapsulation and hermetic sealing, which further increases throughput.
摘要翻译：一种真空显示装置，用于制造具有高产量的高质量等离子体显示装置。构成等离子体显示装置的前面板6被携带到成膜室22中; 并在真空气氛中沉积MgO薄膜。然后将前面板6携带到对准室11中，而不暴露于大气中并与在真空气氛中进行脱气的后面板7对准。没有吸收气体，如水分; 并且薄膜的质量不降低。对准后，不暴露于大气进行老化处理，随后进行气体封装和气密密封，这进一步提高了生产量。

73. 发明授权

US5840374A Method of forming a SiO.sub.2 passivation film on a plastic substrate 失效
标题翻译：在塑料基板上形成SiO 2钝化膜的方法
公开(公告)号：US5840374A
公开(公告)日：1998-11-24
申请号：US661500
申请日：1996-06-11
申请人： Kazuyuki Ito , Kyuzo Nakamura , Michio Ishikawa , Jun Togawa , Noriaki Tani , Masanori Hashimoto , Yumiko Ohashi
发明人： Kazuyuki Ito , Kyuzo Nakamura , Michio Ishikawa , Jun Togawa , Noriaki Tani , Masanori Hashimoto , Yumiko Ohashi
IPC分类号： C23C16/40 , B05D3/06 , C23C16/22
CPC分类号： C23C16/401
摘要： An SiO.sub.2 passivation film is formed on a surface of a substrate made of a plastic material by plasma chemical vapor deposition (CVD) process in which organic oxysilane is used as a raw gas. Instead of a reactive gas having an ashing effect, Ar, He or NH.sub.3 is used as a reactive gas which serves as an auxiliary for decomposing the raw gas at a temperature not greater than a temperature at which the substrate is thermally deformed (i.e., about 250.degree. C.). The ashing of the substrate by oxygen or hydrogen radicals is thus prevented.
摘要翻译：通过等离子体化学气相沉积（CVD）工艺在由塑料材料制成的衬底的表面上形成SiO 2钝化膜，其中使用有机氧化硅作为原料气体。代替具有灰化效应的反应气体，使用Ar，He或NH 3作为反应气体，其用作在不高于基底热变形的温度（即，约 250℃）。因此防止了氧或氢自由基对衬底的灰化。

74. 发明授权

US5288329A Chemical vapor deposition apparatus of in-line type 失效
标题翻译：串联式化学气相沉积装置
公开(公告)号：US5288329A
公开(公告)日：1994-02-22
申请号：US616106
申请日：1990-11-20
申请人： Kyuzo Nakamura , Michio Ishikawa , Kazuyuki Ito , Noriaki Tani , Masanori Hashimoto , Yoshifumi Ota
发明人： Kyuzo Nakamura , Michio Ishikawa , Kazuyuki Ito , Noriaki Tani , Masanori Hashimoto , Yoshifumi Ota
IPC分类号： C23C16/44 , C23C16/02 , C23C16/50 , C23C16/54 , C23F4/00 , H01L21/205 , H01L21/31 , H01L21/00
CPC分类号： C23C16/54 , C23C16/0245
摘要： An in-line type chemical vapor deposition apparatus having an etching device for cleaning at least substrate holders, which is provided downstream of the substrate unloading station in which the processed substrates are removed from the substrate holders at atmosphere pressure. The etching device comprises a plasma etching means in which the substrate holders are positioned on an anode side or a dry-etching means in which the substrate holders are positioned on a cathode side, thereby reducing the down time of the apparatus without any influence of an exfoliation of an adhered film from the substrate holders or other portions.
摘要翻译：一种在线型化学气相沉积装置，具有用于清洁至少基板保持件的蚀刻装置，该蚀刻装置设置在基板卸载站的下游，其中处理的基板在大气压力下从基板保持器移除。蚀刻装置包括等离子体蚀刻装置，其中衬底保持器位于阳极侧或干蚀刻装置，其中衬底保持器位于阴极侧，从而减少装置的停机时间而不受任何影响附着膜从基板保持器或其他部分剥离。

75. 发明授权

US5198309A Magnetic recording member 失效
标题翻译：磁记录部件
公开(公告)号：US5198309A
公开(公告)日：1993-03-30
申请号：US89022
申请日：1987-08-24
申请人： Kyuzo Nakamura , Yoshifumi Ota , Taiki Yamada , Michio Ishikawa , Noriaki Tani
发明人： Kyuzo Nakamura , Yoshifumi Ota , Taiki Yamada , Michio Ishikawa , Noriaki Tani
IPC分类号： G11B5/64 , G11B5/706
CPC分类号： G11B5/70621 , G11B5/64 , Y10S428/90 , Y10S428/928 , Y10T428/12847 , Y10T428/12854 , Y10T428/12861
摘要： An improved magnetic recording member comprising a magnetic metallic film having the composition Co.sub.x Cr.sub.y Ni.sub.z wherein x, y, and z are atomic ratios and 0.45.ltoreq.x
摘要翻译：一种改进的磁记录元件，包括具有组成CoxCryNiz的磁性金属膜，其中x，y和z是原子比，0.45

76. 发明授权

US5180476A Method for producing transparent conductive films 失效
标题翻译：生产透明导电膜的方法
公开(公告)号：US5180476A
公开(公告)日：1993-01-19
申请号：US660840
申请日：1991-02-26
申请人： Satoru Ishibashi , Kyuzo Nakamura , Yasushi Higuchi , Takashi Komatsu , Yuzo Murata , Yoshifumi Ota
发明人： Satoru Ishibashi , Kyuzo Nakamura , Yasushi Higuchi , Takashi Komatsu , Yuzo Murata , Yoshifumi Ota
IPC分类号： C23C14/08 , C23C14/34 , C23C14/35 , H01L21/203 , H01L21/285
CPC分类号： C23C14/086 , C23C14/35 , H01L31/1884 , Y02E10/50
摘要： A method of producing by sputtering an In-O, Sn-O, Zn-O, Cd-Sn-O or Cd-In-O based transparent conductive film according to the present invention uses the addition of a donor element, if needed. The sputtering is carried out by maintaining an intensity of a magnetic field on a surface of a target at 600 Oe or greater as well as by charging the target with a DC electric field superimposed by an RF electric field. An apparatus for producing an In-O, Sn-O, Zn-O, Cd-Sn-O or Cd-In-O base transparent conductive film uses the addition of a donor element, if needed. The apparatus has a vacuum chamber adapted to support therein a substrate and a target in an opposed relationship for forming by sputtering the transparent conductive film on the substrate by plasma discharge generated therebetween. The apparatus has a device for forming a magnetic field having a predetermined intensity of 600 Oe or greater on a surface of the target, a DC power supply for charging the target with a DC electric field, and an RF power supply for charging the target with an RF electric field superimposed on the DC electric field.

77. 发明授权

US4587179A Magnetic recording medium and manufacturing process thereof 失效
标题翻译：磁记录介质及其制造方法
公开(公告)号：US4587179A
公开(公告)日：1986-05-06
申请号：US549518
申请日：1983-11-07
申请人： Kyuzo Nakamura , Yoshifumi Ota
发明人： Kyuzo Nakamura , Yoshifumi Ota
IPC分类号： G11B5/66 , G11B5/64 , G11B5/708 , G11B5/85 , G11B5/851 , H01F10/10 , H01F41/20
CPC分类号： H01F41/20 , G11B5/64 , G11B5/85 , G11B5/851 , H01F10/10 , Y10S428/90
摘要： A magnetic recording member characterized in that a magnetic film formed on a surface of a substrate has a very small amount of hydrogen mixed therein. The manufacturing process therefor is characterized in that hydrogen gas is introduced into the vacuum treatment chamber while the magnetic particles are adhered to the surface of the substrate.
摘要翻译：一种磁记录元件，其特征在于，形成在基板表面上的磁性膜具有非常少量的氢混合在其中。其制造方法的特征在于，将氢气引入真空处理室中，同时将磁性颗粒粘附到基板的表面。

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