专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06533630B1 Vacuum device and method of manufacturing plasma display device 有权
标题翻译：真空装置及等离子体显示装置的制造方法
公开(公告)号：US06533630B1
公开(公告)日：2003-03-18
申请号：US09579274
申请日：2000-05-26
申请人： Ryuuichi Terajima , Yukio Masuda , Toshiharu Kurauchi , Ken Momono , Yoshio Sunaga , Hidenori Suwa , Kyuzo Nakamura
发明人： Ryuuichi Terajima , Yukio Masuda , Toshiharu Kurauchi , Ken Momono , Yoshio Sunaga , Hidenori Suwa , Kyuzo Nakamura
IPC分类号： H01J926
CPC分类号： H01J9/46
摘要： A vacuum display device for enabling the manufacture of high quality plasma display device with high throughput. A front panel 6 constituting a plasma display device is carried into a film deposition chamber 22; and a MgO thin film is deposited in a vacuum atmosphere. The front panel 6 is then carried into an alignment chamber 11 without being exposed to the atmosphere and aligned with a rear panel 7 that has been subjected to degassing in a vacuum atmosphere. There is no absorption of gas, such as moisture; and the quality of the thin film is not degraded. After alignment, aging processing is carried out without exposure to the atmosphere, followed by gas encapsulation and hermetic sealing, which further increases throughput.
摘要翻译：一种真空显示装置，用于制造具有高产量的高质量等离子体显示装置。构成等离子体显示装置的前面板6被携带到成膜室22中; 并在真空气氛中沉积MgO薄膜。然后将前面板6携带到对准室11中，而不暴露于大气中并与在真空气氛中进行脱气的后面板7对准。没有吸收气体，如水分; 并且薄膜的质量不降低。对准后，不暴露于大气进行老化处理，随后进行气体封装和气密密封，这进一步提高了生产量。

2. 发明授权

US08652970B2 Vacuum processing method and vacuum processing apparatus 有权
标题翻译：真空加工方法和真空处理装置
公开(公告)号：US08652970B2
公开(公告)日：2014-02-18
申请号：US13133514
申请日：2010-03-24
申请人： Yoshiyasu Tajima , Seiichi Takahashi , Kyuzo Nakamura
发明人： Yoshiyasu Tajima , Seiichi Takahashi , Kyuzo Nakamura
IPC分类号： H01L21/302 , H01L21/461 , C03C15/00 , C03C25/68
CPC分类号： H01L21/31116 , H01L21/02046 , H01L21/02063 , H01L21/67069
摘要： A processing gas is introduced to remove an oxide film on the surface of a silicon substrate 5. F radicals are allowed to act on the surface of the silicon substrate to etch a silicon layer. Then, NH3 gas, N2 gas and NF3 gas are introduced, allowing NHxFy to act on the oxidized surface of the silicon substrate 5, thereby forming (NH4)2SiF6. The resulting (NH4)2SiF6 is sublimated to remove by-products (SiOF, SiOH) on the surface of the silicon substrate 5.
摘要翻译：引入处理气体以除去硅衬底5的表面上的氧化物膜.F自由基被允许作用在硅衬底的表面上以蚀刻硅层。然后，引入NH 3气体，N 2气体和NF 3气体，使NH x F y作用于硅衬底5的氧化表面，由此形成（NH 4）2 SiF 6。将所得的（NH 4）2 SiF 6升华以除去硅衬底5的表面上的副产物（SiOF，SiOH）。

3. 发明授权

US08158198B2 Method for forming tantalum nitride film 有权
标题翻译：形成氮化钽膜的方法
公开(公告)号：US08158198B2
公开(公告)日：2012-04-17
申请号：US11885399
申请日：2006-03-03
申请人： Narishi Gonohe , Satoru Toyoda , Harunori Ushikawa , Tomoyasu Kondo , Kyuzo Nakamura
发明人： Narishi Gonohe , Satoru Toyoda , Harunori Ushikawa , Tomoyasu Kondo , Kyuzo Nakamura
IPC分类号： C23C16/00
CPC分类号： H01L21/76843 , C23C16/34 , C23C16/45525 , C23C16/45534 , C23C16/45536 , C23C16/4554 , C23C16/45553 , H01L21/28562
摘要： A tantalum nitride film-forming method comprises the steps of introducing a raw gas consisting of a coordination compound constituted by an elemental tantalum (Ta) having a coordinated ligand represented by the general formula: N═(R,R′) (in the formula, R and R′ may be the same or different and each represents an alkyl group having 1 to 6 carbon atoms), and a halogen gas into a vacuum chamber; and reacting these components with one another on a substrate to thus form a surface adsorption film comprising a mono-atomic or multi (several)-atomic layer and composed of a compound represented by the following general formula: TaNx(Hal)y(R, R′)z (in the formula, Hal represents a halogen atom), then introducing radicals generated from an H atom-containing compound to thus remove Ta—N bonds present in the resulting compound through breakage thereof and remove, at the same time, the remaining R(R′) groups bonded to the N atoms present in the compound through the cleavage thereof and to thus form a tantalum nitride film rich in tantalum atoms. The resulting tantalum nitride film has a low resistance, low contents of C and N atoms, and a high compositional ratio: Ta/N, can ensure sufficiently high adherence to the distributing wire-forming film and can thus be useful as a barrier film. Moreover, tantalum particles are implanted in the resulting film according to the sputtering technique to thus further enrich the film with tantalum.
摘要翻译：氮化钽膜形成方法包括以下步骤：引入由具有由以下通式表示的配位配体的元素钽（Ta）构成的配位化合物构成的原料气体：N =（R，R'）（式 R和R'可以相同或不同，各自表示碳原子数1〜6的烷基），卤素气体进入真空室; 并将这些组分彼此反应在基底上，从而形成包含单原子或多（多个）原子层的表面吸附膜，并由以下通式表示的化合物组成：TaNx（Hal）y（R， R'）z（式中，Hal表示卤素原子），然后引入由含H原子的化合物产生的自由基，从而通过其残留除去所得化合物中存在的Ta-N键，同时除去剩余的R（R'）基团通过其切割而与化合物中存在的N原子键合，从而形成富含钽原子的氮化钽膜。所得到的氮化钽膜具有低电阻，C原子和N原子含量低，组成比高：Ta / N可以确保足够高的附着线分布线形成膜，因此可用作阻挡膜。此外，根据溅射技术将钽颗粒注入到所得的膜中，从而进一步用钽富集膜。

4. 发明申请

US20110068402A1 THIN FILM TRANSISTOR AND METHOD FOR PRODUCING THIN FILM TRANSISTOR 审中-公开
标题翻译：薄膜晶体管及其生产薄膜晶体管的方法
公开(公告)号：US20110068402A1
公开(公告)日：2011-03-24
申请号：US12881641
申请日：2010-09-14
申请人： Satoru Takasawa , Satoru Ishibashi , Kyuzo Nakamura , Tadashi Masuda
发明人： Satoru Takasawa , Satoru Ishibashi , Kyuzo Nakamura , Tadashi Masuda
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L23/53238 , C23C14/0057 , C23C14/185 , H01L21/2855 , H01L21/76841 , H01L23/53233 , H01L27/124 , H01L29/458 , H01L2924/0002 , H01L2924/00
摘要： A metallic wiring film, which is not exfoliated even when exposed to a plasma of hydrogen, is provided. A metallic wiring film 20a is constituted by an adhesion layer 51 in which an additive metal is added to copper and a low-resistance metallic layer 52, which is made of pure copper, is disposed on the adhesion layer 51. When the additive metal made of at least one of Ti, Zr and Cr, and oxygen are included in a copper alloy which is in the adhesion layer 51 and a source electrode and a drain electrode are formed from it, copper does not precipitate at an interface between the adhesion layer 51 and the silicon layer even when being exposed to the hydrogen plasma, which prevents exfoliation from occurring between the adhesion layer 51 and the silicon layer. If the amount of additive metal increases, the adhesion layer 51 cannot be etched with an etching liquid for etching the low-resistance metallic layer 52, so that the maximum additional amount to permit the etching to be performed is the upper limit.
摘要翻译：提供即使暴露于氢等离子体时也不会剥离的金属布线膜。金属布线膜20a由在铜中添加添加金属的粘合层51和由纯铜制成的低电阻金属层52设置在粘合层51上。当添加金属制成的Ti，Zr和Cr中的至少一种，并且氧被包括在粘合层51中的铜合金中，并且源电极和漏电极由它形成，铜不会在粘合层 51和硅层，即使当暴露于氢等离子体时，其防止粘附层51和硅层之间发生剥离。如果添加金属的量增加，则不能用用于蚀刻低电阻金属层52的蚀刻液来蚀刻粘合层51，使得允许进行蚀刻的最大附加量为上限。

5. 发明申请

US20110048927A1 SPUTTERING APPARATUS AND SPUTTERING METHOD 审中-公开
标题翻译：溅射装置和喷射方法
公开(公告)号：US20110048927A1
公开(公告)日：2011-03-03
申请号：US12991800
申请日：2009-06-23
申请人： Naoki Morimoto , Tomoyasu Kondo , Kokichi Kamada , Kyuzo Nakamura
发明人： Naoki Morimoto , Tomoyasu Kondo , Kokichi Kamada , Kyuzo Nakamura
IPC分类号： C23C14/35
CPC分类号： C23C14/35 , C23C14/3407 , H01J37/3408 , H01J37/3452 , H01L21/2855 , H01L21/76843 , H01L21/76873
摘要： An inexpensive sputtering apparatus of simple construction is provided in which a film can be formed with good coating characteristics relative to each of micropores of high aspect ratio. The sputtering apparatus has: a target lying opposite to a substrate W which is disposed inside a vacuum chamber; a magnet assembly which generates a tunnel-shaped magnetic field in front of a sputtering surface of the target; a gas introduction means which introduces a sputtering gas into the vacuum chamber; and a sputtering power supply which charges negative potential to the target. There are provided magnetic field generating means to generate a vertical magnetic field of such a nature that vertical lines of magnetic force M pass through a sputtering surface and through an entire surface of the substrate at a predetermined distance from one another.
摘要翻译：提供一种简单结构的廉价的溅射装置，其中相对于每个高纵横比的微孔，可以形成具有良好涂层特性的膜。溅射装置具有：设置在真空室内的与基板W相对的靶; 磁体组件，其在目标的溅射表面的前方产生隧道状磁场; 气体引入装置，其将溅射气体引入真空室; 以及向目标物体负电荷的溅射电源。提供了用于产生垂直磁场的磁场产生装置，其特征在于磁力M的垂直线通过溅射表面并穿过基板的整个表面彼此预定的距离。

6. 发明授权

US5024854A Method of manufacturing perpendicular type magnetic recording member 失效
标题翻译：制造垂直型磁记录部件的方法
公开(公告)号：US5024854A
公开(公告)日：1991-06-18
申请号：US412535
申请日：1989-09-22
申请人： Kyuzo Nakamura , Yoshifumi Ota , Taiki Yamada
发明人： Kyuzo Nakamura , Yoshifumi Ota , Taiki Yamada
IPC分类号： G11B5/64 , G11B5/66 , G11B5/85 , H01F10/20 , H01F41/20
CPC分类号： H01F41/20 , G11B5/64 , G11B5/66 , G11B5/85 , H01F10/20
摘要： A perpendicular type magnetic recording member comprising a perpendicular-incidence magnetic film on a substrate, the perpendicular-incidence magnetic film comprising a magnetic metal and oxygen, the magnetic metal being selected from the group consisting of ferro-magnetic alloys, alloys thereof and combinations thereof; and a method of manufacturing the perpendicular type recording member by utilizing vapor deposition techniques, which may include sputtering and ionization.
摘要翻译：一种垂直型磁记录部件，包括在基板上的垂直入射磁性膜，所述垂直入射磁性膜包括磁性金属和氧，所述磁性金属选自铁磁性合金，其合金及其组合 ; 以及通过利用可包括溅射和电离的气相沉积技术来制造垂直型记录部件的方法。

7. 发明授权

US4832810A Co-based alloy sputter target and process of manufacturing the same 失效
标题翻译： Co基合金溅射靶及其制造方法
公开(公告)号：US4832810A
公开(公告)日：1989-05-23
申请号：US70441
申请日：1987-07-07
申请人： Kyuzo Nakamura , Yoshifumi Ota , Taiki Yamada , Michio Ishikawa , Noriaki Tani , Yasushi Higuchi
发明人： Kyuzo Nakamura , Yoshifumi Ota , Taiki Yamada , Michio Ishikawa , Noriaki Tani , Yasushi Higuchi
IPC分类号： C22F1/10 , C23C14/34
CPC分类号： C23C14/3414 , C22F1/10
摘要： A Co-based alloy sputter target comprising a f.c.c. phase and a h.c.p. phase, wherein the value of th ratio of X-ray diffraction peak intensity, I.sub.fcc(200) /I.sub.hcp(101), is smaller than the value of the same ratio in a Co-based alloy obtained by cooling a Co-based alloy having a f.c.c. single phase to room temperature from the high temperature at which it is in a melted state.The target is manufactured by subjecting to cold-working treatment a Co-based alloy obtained by cooling a Co-based alloy material having a f.c.c. single phase from its melting temperature.
摘要翻译：一种Co基合金溅射靶，其包括直角相和h.c. 相，其中X射线衍射峰强度值Ifcc（200）/ Ihcp（101）的th值小于通过冷却具有第一相的Co基合金获得的Co基合金中相同比例的值，一个fcc 从处于熔融状态的高温到单相至室温。目标是通过对通过冷却具有直角角度的Co基合金材料获得的Co基合金进行冷加工处理来制造的。单相从其熔融温度。

8. 发明授权

US4581245A Method of manufacturing of abrasion resisting magnetic recording product 失效
标题翻译：耐磨磁记录产品的制造方法
公开(公告)号：US4581245A
公开(公告)日：1986-04-08
申请号：US451733
申请日：1982-12-21
申请人： Kyuzo Nakamura , Yoshifumi Ota
发明人： Kyuzo Nakamura , Yoshifumi Ota
IPC分类号： G11B5/72 , C23C14/56 , G11B5/64 , G11B5/725 , G11B5/84 , B05D3/06 , B05D5/12
CPC分类号： C23C14/562 , G11B5/725 , G11B5/84
摘要： A method and apparatus for making an abrasion-resistant magnetic recording product comprising forming a magnetic film on the surface of a substrate in a vacuum container, and thereafter, vapor depositing a lubricant on the surface of the magnetic film in the same vacuum container. Preferably, the surface of the magnetic film can be oxidized with an oxidizing gas by ion bombardment in the same vacuum container, prior to vapor depositing the lubricant.
摘要翻译：一种用于制造耐磨磁记录产品的方法和装置，包括在真空容器中在基板的表面上形成磁膜，然后在同一真空容器中的磁性膜表面上蒸镀润滑剂。优选地，在气相沉积润滑剂之前，磁性膜的表面可以通过离子轰击在同一真空容器中用氧化气体氧化。

9. 发明授权

US4412907A Ferromagnetic high speed sputtering apparatus 失效
标题翻译：铁磁高速溅射装置
公开(公告)号：US4412907A
公开(公告)日：1983-11-01
申请号：US401079
申请日：1982-07-23
申请人： Akio Ito , Kyuzo Nakamura , Yoshifumi Ota , Taiki Yamada
发明人： Akio Ito , Kyuzo Nakamura , Yoshifumi Ota , Taiki Yamada
IPC分类号： H01J37/34 , C23C15/00
CPC分类号： H01J37/3423 , H01J37/3408 , H01J37/3426
摘要： A ferromagnetic, high speed, sputtering apparatus is provided which comprises a vacuum chamber and a target of ferromagnetic material. The target comprises at least two segments which are positioned adjacent to one another and have a gap therebetween. This gap has at least a portion of which that does not extend in the direction of the thickness of the target. A substrate in the vacuum chamber is positioned facing one side of the target. Also, magnetic field generating means is positioned on the other side of the target so that the magnetic field therefrom leaks through the gap.
摘要翻译：提供了一种铁磁，高速溅射装置，其包括真空室和铁磁材料的靶。目标包括至少两个彼此相邻定位且在它们之间具有间隙的段。该间隙的至少一部分不在靶的厚度方向上延伸。真空室中的基板被定位成面向靶的一侧。此外，磁场产生装置位于靶的另一侧，使得其磁场从该间隙泄漏。

10. 发明授权

US08796142B2 Method for forming tantalum nitride film 有权
标题翻译：形成氮化钽膜的方法
公开(公告)号：US08796142B2
公开(公告)日：2014-08-05
申请号：US11885345
申请日：2006-03-03
申请人： Narishi Gonohe , Satoru Toyoda , Harunori Ushikawa , Tomoyasu Kondo , Kyuzo Nakamura
发明人： Narishi Gonohe , Satoru Toyoda , Harunori Ushikawa , Tomoyasu Kondo , Kyuzo Nakamura
IPC分类号： H01L21/44
CPC分类号： H01L21/76843 , C23C16/34 , H01L21/28556 , H01L21/76859 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A tantalum nitride film rich in tantalum atoms is formed by simultaneously introducing a raw gas consisting of a coordination compound of elemental tantalum (Ta) having a coordinated ligand of formula: N═(R, R′) (wherein, R and R′ each represents an alkyl group having 1 to 6 carbon atoms) and NH3 gas into a film-forming chamber; reacting the raw gas with the NH3 gas; forming a reduced compound having Ta—NH3 on a substrate; and introducing a hydrogen atom-containing gas into the chamber to form a tantalum nitride film rich in tantalum atoms. The resulting tantalum nitride film has a low resistance, low contents of C and N atoms, and a high compositional ratio: Ta/N, show sufficiently high adherence to Cu film and can thus be useful as a barrier film. Moreover, tantalum particles are implanted in the resulting film according to the sputtering technique to further enrich the film with tantalum.
摘要翻译：通过同时引入由具有以下结构的配位配体的元素钽（Ta）的配位化合物组成的原料气体，形成富含钽原子的氮化钽膜：N =（R，R'）（其中，R和R'各自代表具有1至6个碳原子的烷基）和NH 3气体进入成膜室; 使原料气与NH 3气反应; 在基材上形成具有Ta-NH 3的还原化合物; 并将含氢原子的气体引入到室中以形成富含钽原子的氮化钽膜。所得到的氮化钽膜具有低电阻，C和N原子含量低，组成比高：Ta / N对Cu膜具有足够高的粘附性，因此可用作阻挡膜。此外，根据溅射技术将钽颗粒注入到所得膜中，以进一步用钽来富集膜。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式