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71. 发明专利

AT527678T 未知
公开(公告)号：AT527678T
公开(公告)日：2011-10-15
申请号：AT09450211
申请日：2009-11-05
申请人： IMS NANOFABRICATION AG
发明人： FRAGNER HEINRICH , PLATZGUMMER ELMAR , NOWAK ROBERT , BUERLI ADRIAN
IPC分类号： H01J37/317

72. 发明专利

AT504936T 未知
公开(公告)号：AT504936T
公开(公告)日：2011-04-15
申请号：AT08450077
申请日：2008-05-13
申请人： IMS NANOFABRICATION AG
发明人： PLATZGUMMER ELMAR
IPC分类号： H01J37/04 , H01J37/147
摘要： A multi-beam pattern definition device (300) for use in a particle-beam processing or inspection apparatus, which is set up to be irradiated with a beam of electrically charged particles and allow passage of the beam through a plurality of apertures thus forming beamlets, which are imaged onto a target. A deflection array means (302) has a plurality of electrostatic deflector electrodes (321) for each beamlet. Each deflector electrode can be applied an electrostatic potential individually. Counter electrodes (311) are electrically connected to a counter potential independently of the deflection array means through a counter-electrode array means (301). The counter potentials may be a common ground potential or individual potentials in order to improve system reliability. In conjunction with an associated counter electrode (311), each deflector electrode deflects its beamlet sufficiently to deflect the beamlet off its nominal path when applied an activating voltage against the respective counter electrode.

73. 发明专利

NL2004846A WERKWIJZE VOOR MASKERLOZE DEELTJESBUNDELBELICHTING. 未知
公开(公告)号：NL2004846A
公开(公告)日：2010-07-19
申请号：NL2004846
申请日：2010-06-08
申请人： IMS NANOFABRICATION AG
发明人： PLATZGUMMER ELMAR
IPC分类号： H01J37/317

74. 发明专利

NL2001369C WERKWIJZE VOOR MASKERLOZE DEELTJESBUNDELBELICHTING. 未知
公开(公告)号：NL2001369C
公开(公告)日：2010-06-14
申请号：NL2001369
申请日：2008-03-13
申请人： IMS NANOFABRICATION AG
发明人： FRAGNER HEINRICH , PLATZGUMMER ELMAR
IPC分类号： H01J37/317
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/302 , H01J2237/30483

75. 发明专利

NL2001066C2 Deeltjesbundelinrichting met verbeterd Wien-filter. 未知
公开(公告)号：NL2001066C2
公开(公告)日：2010-01-28
申请号：NL2001066
申请日：2007-12-07
申请人： IMS NANOFABRICATION AG
发明人： PLATZGUMMER ELMAR
IPC分类号： H01J37/317 , H01J37/05

76. 发明专利

NL1035095A1 Multi-bundel afbuiger-array-inrichting voor maskerloze deeltjesbundel verwerking. 未知
公开(公告)号：NL1035095A1
公开(公告)日：2008-09-01
申请号：NL1035095
申请日：2008-02-27
申请人： IMS NANOFABRICATION AG , INST FÜR MIKROELEKTRONIK STUTT
发明人： PLATZGUMMER ELMAR , LOESCHNER HANS , KVASNICA SAMUEL , SPRINGER REINHARD , IRMSCHER MATHIAS , LETZKUS FLORIAN , BUTSCHKE JOERG
IPC分类号： H01J37/317

77. 发明专利

GB2411741B Compensation of magnetic fields 未知
公开(公告)号：GB2411741B
公开(公告)日：2008-06-11
申请号：GB0404805
申请日：2004-03-03
申请人： IMS NANOFABRICATION GMBH , IMS NANOFABRICATION AG
发明人： BUSCHBECK HERBERT , STENGL GERHARD
IPC分类号： G05F7/00 , H01J37/20 , H01H47/00 , H01L21/027
摘要： For compensation of a magnetic field in an operating region a number of magnetic field sensors (S 1 , S 2 ) and an arrangement of compensation coils (Hh) surrounding said operating region is used. The magnetic field is measured by at least two sensors (S 1 , S 2 ) located at different positions outside the operating region, preferably at opposing positions with respect to a symmetry axis of the operating region, generating respective sensor signals (s 1 , s 2 ), the sensor signals of said sensors are superposed to a feedback signal (ms, fs), which is converted by a controlling means to a driving signal (d 1 ), and the driving signal is used to steer at least one compensation coil (Hh). To further enhance the compensation, the driving signal is also used to derive an additional input signal (cs) for the superposing step to generate the feedback signal (fs).

78. 发明专利

NL1034588A1 Inrichting voor het belichten met geladen deeltjes. 未知
公开(公告)号：NL1034588A1
公开(公告)日：2008-05-06
申请号：NL1034588
申请日：2007-10-29
申请人： IMS NANOFABRICATION AG
发明人： PLATZGUMMER ELMAR
IPC分类号： H01J37/04 , H01J37/317

79. 发明授权

EP3096342B1 BI-DIRECTIONAL DOUBLE-PASS MULTI-BEAM WRITING 有权转让
标题翻译：双向双通道多光束写入
公开(公告)号：EP3096342B1
公开(公告)日：2017-09-20
申请号：EP16160621.5
申请日：2016-03-16
申请人： IMS Nanofabrication AG
发明人： Platzgummer, Elmar
IPC分类号： G03F7/20 , H01J37/04 , H01J37/302 , H01J37/317
CPC分类号： H01J37/3026 , G03F7/70358 , G03F7/70425 , H01J37/20 , H01J37/3177 , H01J2237/202 , H01J2237/20221 , H01J2237/31766

80. 发明公开

EP3070528A1 MULTI-BEAM WRITING OF PATTERN AREAS OF RELAXED CRITICAL DIMENSION 有权转让
标题翻译： MEHRSTRAHLIGES SCHREIBEN VON MUSTERBEREICHEN RELAXIERTER KRITISCHER DIMENSIONEN
公开(公告)号：EP3070528A1
公开(公告)日：2016-09-21
申请号：EP16160622.3
申请日：2016-03-16
申请人： IMS Nanofabrication AG
发明人： Platzgummer, Elmar , Schiessl, Klaus
IPC分类号： G03F7/20 , H01J37/04 , H01J37/28 , H01J37/317 , H01J37/302
CPC分类号： G03F7/70466 , H01J37/3026 , H01J37/3177 , H01J2237/0435 , H01J2237/31764 , H01J2237/31769
摘要： To irradiate a target with a beam of energetic electrically charged particles, the beam is formed and imaged onto a target, where it generates a pattern image composed of pixels. For a pattern which comprises a primary pattern region (102) to be written with a predetermined primary feature size and a secondary pattern region (103) which is composed of structure features capable of being written with a secondary feature size, larger than the primary feature size. The structure features of the primary pattern region (102) are written by exposing a plurality of exposure spots on grid positions of a first exposure grid; the structure features in the secondary pattern region (103) are written by exposing a plurality of exposure spots on grid positions of a second exposure grid (164) according to a second arrangement which is coarser than the regular arrangement of the first exposure grid.
摘要翻译：为了用能量带电的粒子束照射目标，该束被形成并成像到目标上，其中它产生由像素构成的图案图像。对于包括要写入预定主要特征尺寸的主要图案区域（102）和由能够被写入次要特征尺寸的结构特征组成的次要图案区域（103）的图案，大于主要特征尺寸。通过在第一曝光网格的网格位置上暴露多个曝光点来写入主图案区域（102）的结构特征; 根据比第一曝光栅格的规则排列更粗糙的第二布置，通过在第二曝光栅格（164）的栅格位置上暴露多个曝光点来写入二次图案区域（103）中的结构特征。

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