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    • 72. 发明专利
    • AT504936T
    • 2011-04-15
    • AT08450077
    • 2008-05-13
    • IMS NANOFABRICATION AG
    • PLATZGUMMER ELMAR
    • H01J37/04H01J37/147
    • A multi-beam pattern definition device (300) for use in a particle-beam processing or inspection apparatus, which is set up to be irradiated with a beam of electrically charged particles and allow passage of the beam through a plurality of apertures thus forming beamlets, which are imaged onto a target. A deflection array means (302) has a plurality of electrostatic deflector electrodes (321) for each beamlet. Each deflector electrode can be applied an electrostatic potential individually. Counter electrodes (311) are electrically connected to a counter potential independently of the deflection array means through a counter-electrode array means (301). The counter potentials may be a common ground potential or individual potentials in order to improve system reliability. In conjunction with an associated counter electrode (311), each deflector electrode deflects its beamlet sufficiently to deflect the beamlet off its nominal path when applied an activating voltage against the respective counter electrode.
    • 79. 发明公开
    • METHOD FOR COMPENSATING PATTERN PLACEMENT ERRORS CAUSED BY VARIATION OF PATTERN EXPOSURE DENSITY IN A MULTI-BEAM WRITER
    • 用于补偿由多光束写入器中的图案曝光密度的变化引起的图案放置错误的方法
    • EP3258479A1
    • 2017-12-20
    • EP17175033.4
    • 2017-06-08
    • IMS Nanofabrication AG
    • Platzgummer, Elmar
    • H01J37/317H01J37/304
    • H01J37/3177H01J2237/304H01J2237/30433H01J2237/30461
    • A method for compensating pattern placement errors during writing a pattern on a target in a charged-particle multi-beam exposure apparatus is presented. A layout is generated by exposing a plurality of beam field frames using a beam of electrically charged particles, wherein each beam field frame has a respective local pattern density, corresponding to exposure doses imparted to the target when exposing the respective beam field frames. During writing the beam field frames, the actual positions thereof deviate from their respective nominal positions by a placement error as a result of build-up effects within said exposure apparatus, depending on the local pattern density evolution during writing the beam field frames. To compensate this displacement, a displacement behavior model established beforehand is employed to predict the displacements; a local pattern density evolution is determined, displacements of the beam field frames are predicted based on the local pattern density evolution and the displacement behavior model, and the beam field frames are repositioned accordingly based on the predicted values.
    • 提出了一种用于补偿在带电粒子多束曝光设备中的目标上写入图案期间的图案布置误差的方法。 通过使用带电粒子束暴露多个射束场帧来产生布局,其中每个射束场帧具有各自的局部图案密度,对应于当暴露各个射束场帧时赋予目标的曝光剂量。 在写入光束场帧期间,根据在写入光束场帧期间的局部图案密度演变,由于所述曝光设备内的积聚效应,其实际位置偏离其各自的标称位置一个放置误差。 为了补偿这种位移,采用预先建立的位移行为模型来预测位移; 确定局部图案密度演变,基于局部图案密度演变和位移特性模型预测射束场的位移,并且基于预测值相应地重新定位射束场帧。