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1. 发明授权

EP3096342B1 BI-DIRECTIONAL DOUBLE-PASS MULTI-BEAM WRITING 有权转让
标题翻译：双向双通道多光束写入
公开(公告)号：EP3096342B1
公开(公告)日：2017-09-20
申请号：EP16160621.5
申请日：2016-03-16
申请人： IMS Nanofabrication AG
发明人： Platzgummer, Elmar
IPC分类号： G03F7/20 , H01J37/04 , H01J37/302 , H01J37/317
CPC分类号： H01J37/3026 , G03F7/70358 , G03F7/70425 , H01J37/20 , H01J37/3177 , H01J2237/202 , H01J2237/20221 , H01J2237/31766

2. 发明公开

EP3070528A1 MULTI-BEAM WRITING OF PATTERN AREAS OF RELAXED CRITICAL DIMENSION 有权转让
标题翻译： MEHRSTRAHLIGES SCHREIBEN VON MUSTERBEREICHEN RELAXIERTER KRITISCHER DIMENSIONEN
公开(公告)号：EP3070528A1
公开(公告)日：2016-09-21
申请号：EP16160622.3
申请日：2016-03-16
申请人： IMS Nanofabrication AG
发明人： Platzgummer, Elmar , Schiessl, Klaus
IPC分类号： G03F7/20 , H01J37/04 , H01J37/28 , H01J37/317 , H01J37/302
CPC分类号： G03F7/70466 , H01J37/3026 , H01J37/3177 , H01J2237/0435 , H01J2237/31764 , H01J2237/31769
摘要： To irradiate a target with a beam of energetic electrically charged particles, the beam is formed and imaged onto a target, where it generates a pattern image composed of pixels. For a pattern which comprises a primary pattern region (102) to be written with a predetermined primary feature size and a secondary pattern region (103) which is composed of structure features capable of being written with a secondary feature size, larger than the primary feature size. The structure features of the primary pattern region (102) are written by exposing a plurality of exposure spots on grid positions of a first exposure grid; the structure features in the secondary pattern region (103) are written by exposing a plurality of exposure spots on grid positions of a second exposure grid (164) according to a second arrangement which is coarser than the regular arrangement of the first exposure grid.
摘要翻译：为了用能量带电的粒子束照射目标，该束被形成并成像到目标上，其中它产生由像素构成的图案图像。对于包括要写入预定主要特征尺寸的主要图案区域（102）和由能够被写入次要特征尺寸的结构特征组成的次要图案区域（103）的图案，大于主要特征尺寸。通过在第一曝光网格的网格位置上暴露多个曝光点来写入主图案区域（102）的结构特征; 根据比第一曝光栅格的规则排列更粗糙的第二布置，通过在第二曝光栅格（164）的栅格位置上暴露多个曝光点来写入二次图案区域（103）中的结构特征。

3. 发明公开

EP2854154A1 Charged-particle multi-beam apparatus having correction plate 有权转让
标题翻译： Vorrichtung mit programmierbarer Filterplattefürmehrere geladene Teilchenstrahlen
公开(公告)号：EP2854154A1
公开(公告)日：2015-04-01
申请号：EP14184208.8
申请日：2014-09-10
申请人： IMS Nanofabrication AG
发明人： Platzgummer, Elmar
IPC分类号： H01J37/317
CPC分类号： H01J37/3177 , H01J37/045 , H01J37/1472 , H01J2237/0435 , H01J2237/1501 , H01J2237/30455
摘要： In a pattern definition device (7) for a charged-particle multi-beam processing or inspection apparatus comprises a deflection array device (52) with an aperture array field for blanking a plurality of beamlets. The deflection array device comprises a plurality of deflection devices (521, 501), each associated with a respective opening (520) and comprising at least one electrostatic electrode (522, 523, 502) for deflecting, when activated, the beamlet traversing the opening off its nominal path. However, one or more deflection devices (501) may be defective, permanently unable to deflect their respective beamlets (b'). To correct these "non-deflected beamlets" (b') the pattern definition device (7) comprises a filtering device (53) having openings (70) allowing passage of beamlets where the respective deflection devices (521) are operative, and at least one obstructing device (71, 74) which is programmable to permanently assume an obstructing state (74) where it prevents the respective non-deflected beamlets (b') from traversing the pattern definition device (7) along their respective nominal paths downstream of the pattern definition device.
摘要翻译：在用于带电粒子多光束处理或检查装置的图案定义装置（7）中包括具有用于消隐多个子束的孔径阵列场的偏转阵列装置（52）。偏转阵列装置包括多个偏转装置（521,501），每个偏转装置分别与相应的开口520相连并且包括至少一个静电电极522,523,502，用于当被激活时偏转穿过开口的小梁脱离其名义路径。然而，一个或多个偏转装置（501）可能是有缺陷的，永久地不能偏转它们各自的子束（b'）。为了校正这些“非偏转子束”（b'），图案定义装置（7）包括具有开口（70）的过滤装置（53），允许各个偏转装置（521）可操作地通过子束，并且至少一个阻塞装置（71,74），其可编程以永久地呈现阻挡状态（74），其中防止相应的非偏转子束（b'）沿其相应的标称路径沿着相应的标称路径横穿图案定义装置（7）图案定义装置。

4. 发明授权

EP2251893B1 Multi-beam deflector array means with bonded electrodes 有权转让
标题翻译：多波束Ablenkarray与相关联的电极
公开(公告)号：EP2251893B1
公开(公告)日：2014-10-29
申请号：EP10450070.7
申请日：2010-05-03
申请人： IMS Nanofabrication AG
发明人： Platzgummer, Elmar
IPC分类号： H01J37/317 , H01J37/04
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/045 , H01J2237/0437

5. 发明授权

EP2214194B1 Method for producing a multi-beam deflector array device having electrodes 有权转让
标题翻译：一种用于制造设备与多个电极束偏转装置的方法
公开(公告)号：EP2214194B1
公开(公告)日：2012-01-18
申请号：EP10450006.1
申请日：2010-01-27
申请人： IMS Nanofabrication AG
发明人： Platzgummer, Elmar , Fragner, Heinrich
IPC分类号： H01J37/04 , H01J37/09 , H01J37/302 , H01J37/317
CPC分类号： H01J37/045 , H01J37/09 , H01J37/3026 , H01J2237/0437

6. 发明公开

EP2190003A2 Constant current multi-beam patterning 有权转让
标题翻译： Strahlen und konstantem Strom，Strukturierung mit mehreren
公开(公告)号：EP2190003A2
公开(公告)日：2010-05-26
申请号：EP09450212.7
申请日：2009-11-05
申请人： IMS Nanofabrication AG
发明人： Fragner, Heinrich , Platzgummer, Elmar , Bürli, Adrian
IPC分类号： H01J37/317
CPC分类号： H01J37/3177 , B82Y10/00 , B82Y40/00 , Y10S430/143
摘要： The invention relates to a method for forming a pattern on a substrate surface of a target by means of a beam of electrically charged particles in a number of exposure steps, where the beam is split into a patterned beam and there is a relative motion between the substrate and the pattern definition means. This results in an effective overall motion of the patterned particle beam over the substrate surface and exposition of image elements on the substrate surface in each exposure step, wherein the image elements on the target are exposed to the beamlets multiply, namely several times during a number of exposure steps according to a specific sequence. The sequence of exposure steps of the image elements is arranged in a non-linear manner according to a specific rule from one exposure step to the subsequent exposure step in order to reduce the current variations in the optical column of the multibeam exposure apparatus during the exposure of the pattern.
摘要翻译：本发明涉及一种通过多个曝光步骤中带电粒子的光束（1b）在靶（13）的衬底表面上形成图案的方法，其中光束被分成图案化光束（pb ），并且在衬底（13）和图案定义装置（3）之间存在相对运动。这导致图案化粒子束在衬底表面上的有效整体运动，并且在每个曝光步骤中在衬底表面上曝光图像元素，其中靶上的图像元素暴露于子束，在数字期间被多次曝光的曝光步骤。根据从一个曝光步骤到随后的曝光步骤的特定规则，图像元素的曝光步骤的顺序以非线性方式布置，以便减少多光束曝光设备（1）的光学柱中的电流变化，在图案的曝光期间。

7. 发明公开

EP1993118A3 Pattern definition device having distinct counter-electrode array plate 有权转让
标题翻译：独特的反电极组件板的图案定义设备
公开(公告)号：EP1993118A3
公开(公告)日：2010-03-03
申请号：EP08450077.6
申请日：2008-05-13
申请人： IMS Nanofabrication AG
发明人： Platzgummer, Elmar
IPC分类号： H01J37/04 , H01J37/147
CPC分类号： H01J37/045 , B82Y10/00 , B82Y40/00 , H01J37/1472 , H01J37/3177 , H01J2237/0437
摘要： A multi-beam pattern definition device (300) for use in a particle-beam processing or inspection apparatus, which is set up to be irradiated with a beam of electrically charged particles and allow passage of the beam through a plurality of apertures thus forming beamlets, which are imaged onto a target. A deflection array means (302) has a plurality of electrostatic deflector electrodes (321) for each beamlet. Each deflector electrode can be applied an electrostatic potential individually. Counter electrodes (311) are electrically connected to a counter potential independently of the deflection array means through a counter-electrode array means (301). The counter potentials may be a common ground potential or individual potentials in order to improve system reliability. In conjunction with an associated counter electrode (311), each deflector electrode deflects its beamlet sufficiently to deflect the beamlet off its nominal path when applied an activating voltage against the respective counter electrode.

8. 发明公开

EP3258479A1 METHOD FOR COMPENSATING PATTERN PLACEMENT ERRORS CAUSED BY VARIATION OF PATTERN EXPOSURE DENSITY IN A MULTI-BEAM WRITER 有权转让
标题翻译：用于补偿由多光束写入器中的图案曝光密度的变化引起的图案放置错误的方法
公开(公告)号：EP3258479A1
公开(公告)日：2017-12-20
申请号：EP17175033.4
申请日：2017-06-08
申请人： IMS Nanofabrication AG
发明人： Platzgummer, Elmar
IPC分类号： H01J37/317 , H01J37/304
CPC分类号： H01J37/3177 , H01J2237/304 , H01J2237/30433 , H01J2237/30461
摘要： A method for compensating pattern placement errors during writing a pattern on a target in a charged-particle multi-beam exposure apparatus is presented. A layout is generated by exposing a plurality of beam field frames using a beam of electrically charged particles, wherein each beam field frame has a respective local pattern density, corresponding to exposure doses imparted to the target when exposing the respective beam field frames. During writing the beam field frames, the actual positions thereof deviate from their respective nominal positions by a placement error as a result of build-up effects within said exposure apparatus, depending on the local pattern density evolution during writing the beam field frames. To compensate this displacement, a displacement behavior model established beforehand is employed to predict the displacements; a local pattern density evolution is determined, displacements of the beam field frames are predicted based on the local pattern density evolution and the displacement behavior model, and the beam field frames are repositioned accordingly based on the predicted values.
摘要翻译：提出了一种用于补偿在带电粒子多束曝光设备中的目标上写入图案期间的图案布置误差的方法。通过使用带电粒子束暴露多个射束场帧来产生布局，其中每个射束场帧具有各自的局部图案密度，对应于当暴露各个射束场帧时赋予目标的曝光剂量。在写入光束场帧期间，根据在写入光束场帧期间的局部图案密度演变，由于所述曝光设备内的积聚效应，其实际位置偏离其各自的标称位置一个放置误差。为了补偿这种位移，采用预先建立的位移行为模型来预测位移; 确定局部图案密度演变，基于局部图案密度演变和位移特性模型预测射束场的位移，并且基于预测值相应地重新定位射束场帧。

9. 发明授权

EP3070528B1 MULTI-BEAM WRITING OF PATTERN AREAS OF RELAXED CRITICAL DIMENSION 有权转让
标题翻译：放松临界尺寸图案区域的多束写作
公开(公告)号：EP3070528B1
公开(公告)日：2017-11-01
申请号：EP16160622.3
申请日：2016-03-16
申请人： IMS Nanofabrication AG
发明人： Platzgummer, Elmar , Schiessl, Klaus
IPC分类号： G03F7/20 , H01J37/04 , H01J37/28 , H01J37/317 , H01J37/302
CPC分类号： G03F7/70466 , H01J37/3026 , H01J37/3177 , H01J2237/0435 , H01J2237/31764 , H01J2237/31769

10. 发明公开

EP3093869A1 MULTI-BEAM WRITING USING INCLINED EXPOSURE STRIPES 有权转让
标题翻译： MEHRSTRAHLIGES SCHREIBEN MIT GENEIGTEN BELICHTUNGSSTREIFEN
公开(公告)号：EP3093869A1
公开(公告)日：2016-11-16
申请号：EP16169216.5
申请日：2016-05-11
申请人： IMS Nanofabrication AG
发明人： Platzgummer, Elmar
IPC分类号： H01J37/317
CPC分类号： H01J37/3177 , H01J2237/3175 , H01J2237/31766
摘要： To irradiate a target with a beam of energetic electrically charged particles, the beam is formed and imaged onto a target, where it generates a pattern image composed of pixels. The pattern image is moved along a path on the target over a region (R2) of exposure, and this movement defines a number of stripes (s21-s2n) covering said region (R2) in sequential exposures and having respective widths (y0). The number of stripes are written parallel to each other along a general direction (d2), which is at a small angle (ε) to a principal pattern direction (dh) of structures (80) to be written within the region of exposure (R2).
摘要翻译：为了用能量带电的粒子束照射目标，该束被形成并成像到目标上，其中它产生由像素构成的图案图像。图案图像沿着曝光区域（R2）上的目标路径移动，并且该移动在连续曝光中定义覆盖所述区域（R2）的数量条纹（s21-s2n）并且具有相应的宽度（y0）。沿着与要被写入曝光区域（R2）内的结构（80）的主图案方向（dh）成小角度（μ）的大致方向（d2）将条纹数彼此平行地写入，）。

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