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1. 发明专利

GB2411741B Compensation of magnetic fields 未知
公开(公告)号：GB2411741B
公开(公告)日：2008-06-11
申请号：GB0404805
申请日：2004-03-03
申请人： IMS NANOFABRICATION GMBH , IMS NANOFABRICATION AG
发明人： BUSCHBECK HERBERT , STENGL GERHARD
IPC分类号： G05F7/00 , H01J37/20 , H01H47/00 , H01L21/027
摘要： For compensation of a magnetic field in an operating region a number of magnetic field sensors (S 1 , S 2 ) and an arrangement of compensation coils (Hh) surrounding said operating region is used. The magnetic field is measured by at least two sensors (S 1 , S 2 ) located at different positions outside the operating region, preferably at opposing positions with respect to a symmetry axis of the operating region, generating respective sensor signals (s 1 , s 2 ), the sensor signals of said sensors are superposed to a feedback signal (ms, fs), which is converted by a controlling means to a driving signal (d 1 ), and the driving signal is used to steer at least one compensation coil (Hh). To further enhance the compensation, the driving signal is also used to derive an additional input signal (cs) for the superposing step to generate the feedback signal (fs).

2. 发明专利

JP2005108842A Particle-optical electrostatic lens 有权
标题翻译：颗粒光学静电镜
公开(公告)号：JP2005108842A
公开(公告)日：2005-04-21
申请号：JP2004281985
申请日：2004-09-28
申请人： Ims Nanofabrication Gmbh , イーエムエスナノファブリカツィオンゲーエムベーハー
发明人： STENGL GERHARD , BUSCHBECK HERBERT , LAMMER GERTRAUD
IPC分类号： H01J37/09 , H01J37/12 , H01J37/305 , H01L21/027
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/12 , H01J2237/3175
摘要： PROBLEM TO BE SOLVED: To make magnetic shield of an electrostatic lens system easy by reducing a space especially occupied by a lens. SOLUTION: In a charged particle beam exposure device, an electrostatic lens (ML) has some (at least three) electrodes surrounding a particle beam optical path with rotational symmetry (EFR, EM, EFN), and the electrodes are coaxially arranged on a common optical axis indicating a center of the optical path and has different electrostatic potentials applied through a power supply system. At least one sub set (a partial aggregate) of the electrode (EM) forms an electrode array realized as a series of electrodes continuously arranged along the optical axis and in a substantially equivalent shape. An outside part of the electrode (EM) of the electrode array has outside parts (OR) of corresponding opposite faces (f1, f2) respectively facing toward the next and the preceding electrodes. A length of the electrode (EM) is preferably at least 4.1 times (3 times) of an inner radius (ril) of the faces (fi, f2). COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：通过减少特别被镜头占据的空间，使静电透镜系统的磁屏蔽变得容易。解决方案：在带电粒子束曝光装置中，静电透镜（ML）具有围绕具有旋转对称性（EFR，EM，EFN）的粒子束光路的一些（至少三个）电极，并且电极同轴布置在指示光路中心的公共光轴上，并且具有通过电源系统施加的不同的静电电位。电极（EM）的至少一个子集（部分聚集体）形成电极阵列，该电极阵列被实现为沿着光轴连续排列并以基本上等效的形状的一系列电极。电极阵列的电极（EM）的外部部分具有分别面向下一个电极和前一个电极的对应的相对面（f1，f2）的外部部分（OR）。电极（EM）的长度优选为面（fi，f2）的内半径（ril）的至少4.1倍（3倍）。版权所有（C）2005，JPO＆NCIPI

3. 发明专利

JP2009111405A Method for forming pattern on surface of substrate by beam of charged particles 审中-公开
标题翻译：用充填颗粒束形成基板表面图案的方法
公开(公告)号：JP2009111405A
公开(公告)日：2009-05-21
申请号：JP2008317882
申请日：2008-12-15
申请人： Ims Nanofabrication Ag , イーエムエスナノファブリカツィオンアーゲー
发明人： PLATZGUMMER ELMAR , LOESCHNER HANS , STENGL GERHARD , VONACH HERBERT , CHALUPKA ALFRED , LAMMER GERTRAUD , BUSCHBECK HERBERT , NOWAK ROBERT , WINDISCHBAUER TILL
IPC分类号： G03F7/20 , H01L21/027 , H01J37/04 , H01J37/09 , H01J37/305 , H01J37/317
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/045 , H01J37/3174
摘要： PROBLEM TO BE SOLVED: To provide a blanking aperture array device capable of suppressing an irradiation damage of the aperture array and realizing the miniatuarization of the device. SOLUTION: Particle beam is created, the particle beam is directed through pattern drawing means that creates a number of beams using aperture array means 203 and blanking means 202, and all of the remainings form a patternized particle beam pb as a whole. Then, the surface of a substrate is irradiated with the patternized particle beam pb to form the image of an opened aperture. A subset of the aperture is opened for a split second of exposure time, and is closed for the remaining time of the exposure time, in accordance therewith, a partial exposure is created at a value smaller than a threshold value of the exposure of pixels on the surface of the substrate, and the threshold value is smaller than or equal to a value corresponding to the entire exposure caused by the aperture opened in the entire exposure time. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供能够抑制孔径阵列的照射损伤并实现装置的微型化的消隐孔阵列装置。解决方案：产生粒子束，粒子束被引导通过图案绘制装置，其通过孔阵列装置203和消隐装置202产生多个光束，并且所有残留物整体形成图案化的粒子束pb。然后，用图形化的粒子束pb照射衬底的表面，以形成打开的孔的图像。孔径的一部分打开曝光时间的二分之一秒，并且在曝光时间的剩余时间内关闭，因此，以小于像素曝光的阈值的值创建部分曝光基板的表面和阈值小于或等于对应于在整个曝光时间内打开的孔径导致的整个曝光的值。版权所有（C）2009，JPO＆INPIT

4. 发明专利

JP2005252254A Method for compensating magnetic field in operating area 有权
标题翻译：操作区域磁场补偿方法
公开(公告)号：JP2005252254A
公开(公告)日：2005-09-15
申请号：JP2005052280
申请日：2005-02-28
申请人： Ims Nanofabrication Gmbh , アイエムエスナノファブリケイションゲエムベーハー
发明人： STENGL GERHARD , BUSCHBECK HERBERT
IPC分类号： H01J37/20 , G05F7/00 , H01H47/00 , H01L21/027
CPC分类号： G05F7/00
摘要： PROBLEM TO BE SOLVED: To compensate magnetic fields using magnetic field sensors set in an operating area (particle beam) where the magnetic fields must be compensated.
SOLUTION: Magnetic fields sensors S1, S2 in the operating area and a compensation coil Hh mechanism enclosing the operating area are used for the magnetic field compensation. The magnetic fields are in different positions, preferably in the positions opposite to each other with respect to the axis of symmetry of the operating area, and measured by at least two sensors S1, S2 generating respective sensor signals s1, s2. The sensor signals s1, s2 of the sensors S1, S2 are superposed to create feedback signals ms, fs, which are converted into a drive signal d1 by a control means. The drive signal is then used to control the direction of the magnetic field of at least one compensation coil (Hh).
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：使用设置在必须补偿磁场的操作区域（粒子束）中的磁场传感器来补偿磁场。
解决方案：操作区域中的磁场传感器S1，S2和围绕操作区域的补偿线圈Hh机构用于磁场补偿。磁场位于不同的位置，优选地在相对于操作区域的对称轴线彼此相对的位置处，并且由至少两个产生各个传感器信号s1，s2的传感器S1，S2测量。传感器S1，S2的传感器信号s1，s2被叠加以产生由控制装置转换成驱动信号d1的反馈信号ms，fs。然后使用驱动信号来控制至少一个补偿线圈（Hh）的磁场方向。版权所有（C）2005，JPO＆NCIPI

5. 发明专利

JP2005129944A Charged-particle multibeam exposure device 有权
标题翻译：充电颗粒多孔曝光装置
公开(公告)号：JP2005129944A
公开(公告)日：2005-05-19
申请号：JP2004305981
申请日：2004-10-20
申请人： Ims Nanofabrication Gmbh , イーエムエスナノファブリカツィオンゲーエムベーハー
发明人： STENGL GERHARD , PLATZGUMMER ELMAR , LOESCHNER HANS
IPC分类号： G03F7/20 , H01J37/317 , H01L21/027
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/3177
摘要： PROBLEM TO BE SOLVED: To provide a charged-particle multibeam exposure device that enables a high throughput. SOLUTION: The charged-particle multibeam exposure device 1 for the exposure of a target 41 employs a plurality of beams of charged particles that travel along collimated beam paths directed toward a target 41. An illumination system 10, a forming means 20 and a projection optical system 30 are provided for each of the particle beams. The illumination system 10 and projection optical system 30 are composed of particle-optical lenses having lens elements common to more than one particle beam. A pattern defining means 20 is made up of a blanking means that defines a multitude of beamlets included in the respective particle beams to configure the form of the projection on the target 41 in a desired pattern, by permitting the beamlets to pass through exclusively a plurality of apertures that serve to define the forms of the beamlets transmitted therethrough, and further switches off the passage of selected beamlets from the respective paths. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供能够实现高产量的带电粒子多光束曝光装置。解决方案：用于曝光目标41的带电粒子多光束曝光装置1采用沿着朝向目标41的准直光束路径行进的多个带电粒子束。照明系统10，形成装置20和为每个粒子束提供投影光学系统30。照明系统10和投影光学系统30由具有多于一个粒子束共有的透镜元件的粒子光学透镜构成。图案定义装置20由消隐装置构成，该消隐装置限定包括在各个粒子束中的多个子束，以通过允许子束仅仅通过多个子镜来将目标41上的投影的形状设计成所需的图案用于限定通过其穿过的子束的形式，并且进一步切断所选择的子束从相应路径的通过。版权所有（C）2005，JPO＆NCIPI

6. 发明专利

JP2004040076A Maskless particle beam device for exposing pattern on substrate 有权
公开(公告)号：JP2004040076A
公开(公告)日：2004-02-05
申请号：JP2003045145
申请日：2003-01-17
申请人： Ims Nanofabrication Gmbh , イーエムエスナノファブリカツィオンゲーエムベーハー
发明人： PLATZGUMMER ELMAR , LOESCHNER HANS , STENGL GERHARD , VONACH HERBERT , CHALUPKA ALFRED , LAMMER GERTRAUD , BUSCHBECK HERBERT , NOWAK ROBERT , WINDISCHBAUER TILL
IPC分类号： G03F7/20 , H01J37/04 , H01J37/09 , H01J37/305 , H01J37/317 , H01L21/027
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/045 , H01J37/3174
摘要： PROBLEM TO BE SOLVED: To provide an aperture means suitable for a charged particle beam pattern writing system having a blanking aperture array. SOLUTION: An aperture array (20) is arranged in a pattern writing region composed of a plurality of alternating lines wherein each line is composed of a first segment (sf) having no aperture, and second segments (r1, r2, r3) each including a large number of apertures separated by an aperture region as lateral offset. The lateral offset is equal to integer times of the aperture width and the length of the first segment is set longer than the lateral offset. It is repeated every n-th (n≥2) line in the direction perpendicular to the line direction. COPYRIGHT: (C)2004,JPO

7. 发明申请

WO2006086815A2 CHARGED-PARTICLE EXPOSURE APPARATUS 审中-公开
标题翻译：充电粒子曝光装置
公开(公告)号：WO2006086815A2
公开(公告)日：2006-08-24
申请号：PCT/AT2006000060
申请日：2006-02-16
申请人： IMS NANOFABRICATION GMBH , PLATZGUMMER ELMAR , CERNUSCA STEFAN , STENGL GERHARD
发明人： PLATZGUMMER ELMAR , CERNUSCA STEFAN , STENGL GERHARD
IPC分类号： H01J37/317
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/3175 , H01J2237/31788 , H01J2237/31793
摘要： A particle-beam projection processing apparatus (100) for irradiating a target (41), with an illumination system (101) for forming a wide-area illuminating beam (Ip) of energetic electrically charged particles; a pattern definition means (102) for positioning an aperture pattern (21) in the path of the illuminating beam; and a projection system (103) for projecting the beam thus patterned (pb) onto a target (41) to be positioned after the projection system. A foil (34, 35) located across the path of the patterned beam (pb) is positioned between the pattern definition means (102) and the position of the target (41) at a location close to an image (i0) of the aperture pattern (21) formed by the projection system.
摘要翻译：一种用于对目标物（41）照射用于形成能量带电粒子的广域照明光束（Ip）的照明系统（101）的粒子束投影处理装置（100）用于将光圈图案（21）定位在照明光束的路径中的图案定义装置（102）以及投影系统（103），用于将如此图案化的光束（pb）投影到目标（41）上以在投影系统之后定位。位于图案化光束（pb）的路径上的箔片（34,35）位于图案定义装置（102）和目标（41）的靠近孔径图像（i0）的位置之间图案（21）由投影系统形成。

8. 发明专利

GB2412494A Maskless particle-beam system for exposing a pattern on a substrate 未知
公开(公告)号：GB2412494A
公开(公告)日：2005-09-28
申请号：GB0512347
申请日：2003-01-13
申请人： IMS NANOFABRICATION GMBH
发明人： PLATZGUMMER ELMAR , LOESCHNER HANS , STENGL GERHARD , VONACH HERBERT , CHALUPKA ALFRED , LAMMER GERTRAUD , BUSCHBECK HERBERT , NOWAK ROBERT , WINDISCHBAUER TILL
IPC分类号： H01J37/04 , H01J37/30 , H01J37/305
摘要： A method for forming a pattern on a surface of a substrate (41) by means of a beam (lb, pb) of energetic electrically charged particles, comprising the following steps: ```producing said particle beam, ```directing said particle beam (lb, pb) through a pattern definition means (102) producing a number of beamlets (bm) using an aperture array means (203) having a plurality of regularly arranged apertures (230) of substantially identical shape defining the shape of said beamlets (bin), and using a blanking means (202) to switch off the passage of selected beamlets (bin), the others forming, as a whole, a patterned particle beam, and ```projecting said patterned particle beam onto said substrate (41) surface to form an image of those apertures (230) which are switched on, each aperture (230) corresponding to an image element on the substrate (41) surface during a uniform exposure time, ```wherein a subset of the apertures (230) is switched on during a fraction of the exposure time and switched off for the remaining fraction of the exposure time, thus causing a fractional exposure at a value lower than a threshold of exposure of image elements on the substrate (41) surface, which threshold is lower than or equal to the value corresponding to a full exposure as caused by an aperture (230) switched on during the full exposure time.

9. 发明专利

GB2435348B Pattern lock system for particle-beam exposure apparatus 未知
公开(公告)号：GB2435348B
公开(公告)日：2009-06-24
申请号：GB0708916
申请日：2005-11-15
申请人： IMS NANOFABRICATION AG
发明人： STENGL GERHARD , BUSCHBECK HERBERT , NOWAK ROBERT
IPC分类号： H01J37/317
摘要： In a pattern-lock system of particle-beam apparatus wherein the imaging of the pattern is done by means of at least two consecutive projector stages of the projecting system, reference marks are imaged upon registering means to determine the position of the particle-beam, at the location of an intermediary image of the reference marks produced by a non-final projector stage, with the registering means being positioned at locations of nominal positions of an intermediary imaging plane. Furthermore, to produce a scanning movement over the registering means the reference beamlets are shifted laterally by means of deflector means provided in the pattern defining means in dependence of a time-dependent electric voltage.

10. 发明专利

GB2412494B Maskless particle-beam system for exposing a pattern on a substrate 未知
公开(公告)号：GB2412494B
公开(公告)日：2006-02-01
申请号：GB0512347
申请日：2003-01-13
申请人： IMS NANOFABRICATION GMBH
发明人： PLATZGUMMER ELMAR , LOESCHNER HANS , STENGL GERHARD , VONACH HERBERT , CHALUPKA ALFRED , LAMMER GERTRAUD , BUSCHBECK HERBERT , NOWAK ROBERT , WINDISCHBAUER TILL
IPC分类号： H01J37/30 , H01J37/04 , H01J37/305

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