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    • 63. 发明授权
    • Configuration random access memory
    • 配置随机存取存储器
    • US08030962B2
    • 2011-10-04
    • US12868575
    • 2010-08-25
    • Irfan RahimAndy L. LeeMyron Wai WongWilliam Bradley VestJeffrey T. Watt
    • Irfan RahimAndy L. LeeMyron Wai WongWilliam Bradley VestJeffrey T. Watt
    • H03K19/173
    • H03K19/1776G11C11/401G11C11/404G11C14/00H03K19/1778
    • Integrated circuits such as programmable logic device integrated circuits are provided that have configuration random-access memory elements. The configuration random-access memory elements are loaded with configuration data to customize programmable logic on the integrated circuits. Each memory element has a capacitor that stores data for that memory element. A pair of cross-coupled inverters are connected to the capacitor. The inverters ensure that the memory elements produce output control signals with voltages than range from one power supply rail to another. Each configuration random-access memory element may have a clear transistor. The capacitor may be formed in a dielectric layer that lies above the transistors of the inverters, the address transistor, and the clear transistor. The inverters may be powered with an elevated power supply voltage.
    • 提供了诸如可编程逻辑器件集成电路的集成电路,其具有配置随机存取存储器元件。 配置随机存取存储器元件装载有配置数据以在集成电路上定制可编程逻辑。 每个存储器元件具有存储该存储器元件的数据的电容器。 一对交叉耦合的反相器连接到电容器。 逆变器确保存储元件产生的输出控制信号的电压低于从一个电源轨到另一个电源的范围。 每个配置随机存取存储器元件可以具有透明晶体管。 电容器可以形成在位于反相器,地址晶体管和透明晶体管的晶体管之上的电介质层中。 逆变器可以用升高的电源电压供电。
    • 64. 发明授权
    • High-performance memory interface circuit architecture
    • 高性能存储器接口电路架构
    • US07969215B1
    • 2011-06-28
    • US12467681
    • 2009-05-18
    • Joseph HuangChiakang SungPhilip PanYan ChongAndy L. LeeBrian D. Johnson
    • Joseph HuangChiakang SungPhilip PanYan ChongAndy L. LeeBrian D. Johnson
    • H03L7/00
    • H03L7/0812G11C7/22G11C7/222H03L7/0805
    • A programmable memory interface circuit includes a programmable DLL delay chain, a phase offset control circuit and a programmable DQS delay chain. The DLL delay chain uses a set of serially connected delay cells, a programmable switch, a phase detector and a digital counter to generate a coarse phase shift control setting. The coarse phase shift control setting is then used to pre-compute a static residual phase shift control setting or generate a dynamic residual phase shift control setting, one of which is chosen by the phase offset control circuit to be added to or subtracted from the coarse phase shift control setting to generate a fine phase shift control setting. The coarse and fine phase shift control settings work in concert to generate a phase-delayed DQS signal that is center-aligned to its associated DQ signals.
    • 可编程存储器接口电路包括可编程DLL延迟链,相位偏移控制电路和可编程DQS延迟链。 DLL延迟链使用一组串行连接的延迟单元,可编程开关,相位检测器和数字计数器来产生粗略的相移控制设置。 然后,粗略的相移控制设置用于预先计算静态残留相移控制设置或生成动态残留相移控制设置,其中一个由相位偏移控制电路选择以被加到或从粗略 相移控制设置,以产生精细的相移控制设置。 粗调和精细相移控制设置一致地产生相位延迟的DQS信号,其中心对准其相关联的DQ信号。