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    • 1. 发明授权
    • High performance memory interface circuit architecture
    • 高性能存储器接口电路架构
    • US08593195B1
    • 2013-11-26
    • US13614526
    • 2012-09-13
    • Joseph HuangChiakang SungPhilip PanYan ChongAndy L. LeeBrian D. Johnson
    • Joseph HuangChiakang SungPhilip PanYan ChongAndy L. LeeBrian D. Johnson
    • H03H11/16
    • H03L7/0812G11C7/22G11C7/222H03L7/0805
    • A programmable memory interface circuit includes a programmable DLL delay chain, a phase offset control circuit and a programmable DQS delay chain. The DLL delay chain uses a set of serially connected delay cells, a programmable switch, a phase detector and a digital counter to generate a coarse phase shift control setting. The coarse phase shift control setting is then used to pre-compute a static residual phase shift control setting or generate a dynamic residual phase shift control setting, one of which is chosen by the phase offset control circuit to be added to or subtracted from the coarse phase shift control setting to generate a fine phase shift control setting. The coarse and fine phase shift control settings work in concert to generate a phase-delayed DQS signal that is center-aligned to its associated DQ signals.
    • 可编程存储器接口电路包括可编程DLL延迟链,相位偏移控制电路和可编程DQS延迟链。 DLL延迟链使用一组串行连接的延迟单元,可编程开关,相位检测器和数字计数器来产生粗略的相移控制设置。 然后,粗略的相移控制设置用于预先计算静态残留相移控制设置或生成动态残留相移控制设置,其中一个由相位偏移控制电路选择以被加到或从粗略 相移控制设置,以产生精细的相移控制设置。 粗调和精细相移控制设置一致地产生相位延迟的DQS信号,其中心对准其相关联的DQ信号。
    • 2. 发明授权
    • High-performance memory interface circuit architecture
    • 高性能存储器接口电路架构
    • US07535275B1
    • 2009-05-19
    • US11789598
    • 2007-04-24
    • Joseph HuangChiakang SungPhilip PanYan ChongAndy L. LeeBrian D. Johnson
    • Joseph HuangChiakang SungPhilip PanYan ChongAndy L. LeeBrian D. Johnson
    • H03L7/00
    • H03L7/0812G11C7/22G11C7/222H03L7/0805
    • A programmable memory interface circuit includes a programmable DLL delay chain, a phase offset control circuit and a programmable DQS delay chain. The DLL delay chain uses a set of serially connected delay cells, a programmable switch, a phase detector and a digital counter to generate a coarse phase shift control setting. The coarse phase shift control setting is then used to pre-compute a static residual phase shift control setting or generate a dynamic residual phase shift control setting, one of which is chosen by the phase offset control circuit to be added to or subtracted from the coarse phase shift control setting to generate a fine phase shift control setting. The coarse and fine phase shift control settings work in concert to generate a phase-delayed DQS signal that is center-aligned to its associated DQ signals.
    • 可编程存储器接口电路包括可编程DLL延迟链,相位偏移控制电路和可编程DQS延迟链。 DLL延迟链使用一组串行连接的延迟单元,可编程开关,相位检测器和数字计数器来产生粗略的相移控制设置。 然后,粗略的相移控制设置用于预先计算静态残留相移控制设置或生成动态残留相移控制设置,其中一个由相位偏移控制电路选择以被加到或从粗略 相移控制设置,以产生精细的相移控制设置。 粗调和精细相移控制设置一致地产生相位延迟的DQS信号,其中心对准其相关联的DQ信号。
    • 3. 发明授权
    • High-performance memory interface circuit architecture
    • 高性能存储器接口电路架构
    • US07227395B1
    • 2007-06-05
    • US11055125
    • 2005-02-09
    • Joseph HuangChiakang SungPhilip PanYan ChongAndy L. LeeBrian D. Johnson
    • Joseph HuangChiakang SungPhilip PanYan ChongAndy L. LeeBrian D. Johnson
    • H03L7/00
    • H03L7/0812G11C7/22G11C7/222H03L7/0805
    • A programmable memory interface circuit includes a programmable DLL delay chain, a phase offset control circuit and a programmable DQS delay chain. The DLL delay chain uses a set of serially connected delay cells, a programmable switch, a phase detector and a digital counter to generate a coarse phase shift control setting. The coarse phase shift control setting is then used to pre-compute a static residual phase shift control setting or generate a dynamic residual phase shift control setting, one of which is chosen by the phase offset control circuit to be added to or subtracted from the coarse phase shift control setting to generate a fine phase shift control setting. The coarse and fine phase shift control settings work in concert to generate a phase-delayed DQS signal that is center-aligned to its associated DQ signals.
    • 可编程存储器接口电路包括可编程DLL延迟链,相位偏移控制电路和可编程DQS延迟链。 DLL延迟链使用一组串行连接的延迟单元,可编程开关,相位检测器和数字计数器来产生粗略的相移控制设置。 然后,粗略的相移控制设置用于预先计算静态残留相移控制设置或生成动态残留相移控制设置,其中一个由相位偏移控制电路选择以被加到或从粗略 相移控制设置,以产生精细的相移控制设置。 粗调和精细相移控制设置一致地产生相位延迟的DQS信号,其中心对准其相关联的DQ信号。
    • 4. 发明授权
    • High-performance memory interface circuit architecture
    • 高性能存储器接口电路架构
    • US08305121B1
    • 2012-11-06
    • US13168499
    • 2011-06-24
    • Joseph HuangChiakang SungPhilip PanYan ChongAndy L. LeeBrian D. Johnson
    • Joseph HuangChiakang SungPhilip PanYan ChongAndy L. LeeBrian D. Johnson
    • H03L7/00
    • H03L7/0812G11C7/22G11C7/222H03L7/0805
    • A programmable memory interface circuit includes a programmable DLL delay chain, a phase offset control circuit and a programmable DQS delay chain. The DLL delay chain uses a set of serially connected delay cells, a programmable switch, a phase detector and a digital counter to generate a coarse phase shift control setting. The coarse phase shift control setting is then used to pre-compute a static residual phase shift control setting or generate a dynamic residual phase shift control setting, one of which is chosen by the phase offset control circuit to be added to or subtracted from the coarse phase shift control setting to generate a fine phase shift control setting. The coarse and fine phase shift control settings work in concert to generate a phase-delayed DQS signal that is center-aligned to its associated DQ signals.
    • 可编程存储器接口电路包括可编程DLL延迟链,相位偏移控制电路和可编程DQS延迟链。 DLL延迟链使用一组串行连接的延迟单元,可编程开关,相位检测器和数字计数器来产生粗略的相移控制设置。 然后,粗略的相移控制设置用于预先计算静态残留相移控制设置或生成动态残留相移控制设置,其中一个由相位偏移控制电路选择以被加到或从粗略 相移控制设置,以产生精细的相移控制设置。 粗调和精细相移控制设置一致地产生相位延迟的DQS信号,其中心对准其相关联的DQ信号。
    • 5. 发明授权
    • High-performance memory interface circuit architecture
    • 高性能存储器接口电路架构
    • US07969215B1
    • 2011-06-28
    • US12467681
    • 2009-05-18
    • Joseph HuangChiakang SungPhilip PanYan ChongAndy L. LeeBrian D. Johnson
    • Joseph HuangChiakang SungPhilip PanYan ChongAndy L. LeeBrian D. Johnson
    • H03L7/00
    • H03L7/0812G11C7/22G11C7/222H03L7/0805
    • A programmable memory interface circuit includes a programmable DLL delay chain, a phase offset control circuit and a programmable DQS delay chain. The DLL delay chain uses a set of serially connected delay cells, a programmable switch, a phase detector and a digital counter to generate a coarse phase shift control setting. The coarse phase shift control setting is then used to pre-compute a static residual phase shift control setting or generate a dynamic residual phase shift control setting, one of which is chosen by the phase offset control circuit to be added to or subtracted from the coarse phase shift control setting to generate a fine phase shift control setting. The coarse and fine phase shift control settings work in concert to generate a phase-delayed DQS signal that is center-aligned to its associated DQ signals.
    • 可编程存储器接口电路包括可编程DLL延迟链,相位偏移控制电路和可编程DQS延迟链。 DLL延迟链使用一组串行连接的延迟单元,可编程开关,相位检测器和数字计数器来产生粗略的相移控制设置。 然后,粗略的相移控制设置用于预先计算静态残留相移控制设置或生成动态残留相移控制设置,其中一个由相位偏移控制电路选择以被加到或从粗略 相移控制设置,以产生精细的相移控制设置。 粗调和精细相移控制设置一致地产生相位延迟的DQS信号,其中心对准其相关联的DQ信号。
    • 9. 发明授权
    • Techniques for implementing address recycling in memory circuits
    • 在存储器电路中实现地址回收的技术
    • US06961280B1
    • 2005-11-01
    • US10731279
    • 2003-12-08
    • Philip PanChiakang SungJoseph HuangYan ChongJohnson Tan
    • Philip PanChiakang SungJoseph HuangYan ChongJohnson Tan
    • G06F12/08G11C8/00G11C8/06G11C8/10
    • G11C8/06G06F12/0895G11C8/10
    • Techniques are provided for recycling addresses in memory blocks. Address signals in memory blocks are stored temporarily in a set of parallel coupled address registers. The address registers transfer the address signals to an address decoder block, which decodes the address signals. The address decoder block transfers the decoded addresses to a memory array. A stall state occurs when the cache memory block needs a new set of data to replace the old set of data. Address signals are stored in the address registers during the stall state by coupling each register's output to its data input using a series of multiplexers. The multiplexers are controlled by an address stall signal that indicates the onset and the end of a stall state. After the end of a stall state, the address registers store the next address signal received at the memory block.
    • 提供技术来回收内存块中的地址。 存储器块中的地址信号被临时存储在一组并行耦合的地址寄存器中。 地址寄存器将地址信号传送到地址解码块,对地址信号进行解码。 地址解码器块将解码的地址传送到存储器阵列。 当缓存存储块需要一组新的数据来替换旧的数据集时,会发生停顿状态。 通过使用一系列多路复用器将每个寄存器的输出耦合到其数据输入,地址信号在失速状态下存储在地址寄存器中。 多路复用器由指示失速状态的开始和结束的地址停止信号控制。 在停止状态结束后,地址寄存器存储在存储块处接收的下一个地址信号。