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61. 发明专利

JPS61253862A SIGNAL TRANSMISSION SYSTEM OF ELECTRONIC DEVICE 失效
公开(公告)号：JPS61253862A
公开(公告)日：1986-11-11
申请号：JP9544585
申请日：1985-05-07
申请人： HITACHI LTD
发明人： ISHIOKA YOSHIO , TSUJI KAZUTAKA , TAKASAKI YUKIO , SHIMOMOTO TAIJI , MATSUBARA HIROKAZU , HIRAI TADAAKI
IPC分类号： H01L27/00 , G02B6/12 , G02B6/43 , H01L27/15 , H01L31/12
摘要： PURPOSE:To enable information to be transferred smoothly between electronic devices or between functional parts within a device, by providing a plurality of circuits, a plurality of light sources having different wavelengths, and light- receiving sections and photoelectric converting sections belonging to the respective circuits and arranged corresponding to the respective wavelengths. CONSTITUTION:Optical signal generators 10 and 11 belonging to a circuit 7 are provided by a layered structure of materials having different energy gaps. The layer 10 is made thicker than the layer 11. Consequently, the region 10 produces a narrower energy gap than the region 11 and the region 10 generates a longer wavelength while the region 11 generates a shorter wavelength. Light transmission paths 12 and 13 are also provided by a layered structure of differ ent materials, and the thicknesses of the layers are selected such that the layer 12 has a wider energy gap than the layer 13. If the optical signal generator 10 is driven, a signal is sent to a circuit 9. If the optical signal generator 11 is driven, on the contrary, the signal is sent to a circuit 8. Thus digital signals also can be transmitted by turning the optical signal generators ON and OFF. In this manner, information can be transferred very smoothly within the elec tronic device.

62. 发明专利

JPS59112663A Photodetector device 失效
标题翻译：光电设备
公开(公告)号：JPS59112663A
公开(公告)日：1984-06-29
申请号：JP21618683
申请日：1983-11-18
申请人： Hitachi Ltd
发明人： MARUYAMA EIICHI , IMAMURA YOSHINORI , ADAKA SABUROU , INAO KIYOHISA , TAKASAKI YUKIO , TSUKADA TOSHIHISA , HIRAI TADAAKI
IPC分类号： H01J29/45 , H01L27/146 , H01L31/0248 , H01L31/0264 , H01L31/09 , H01L31/20 , H04N5/335 , H04N5/361 , H04N5/369
CPC分类号： H01L31/095 , H01L31/202 , Y02E10/50 , Y02P70/521
摘要： PURPOSE:To obtain a preferable photodetector device by utilizing the fact that a thin amorphous film containing Si and H has less trap which facilitates to obtain a specific resistance of 10 OMEGAcm or higher and disturbs a light transfer carrier. CONSTITUTION:A transparent electrode 2 and an N type CeO2 film 9 are superposed on a galss plate 1. Then, a substrain is maintained at 100-300 deg.C in H2+ Ar, a reactive sputtering is performed with B-added Si as a target, and a photoconductive film 3 of P type amorphous Si having 100nm-20mum of thickness is superposed. H density in the film 3 is altered by varying H2 partial pressure of pressure 2X10 -1X10 Torr by 0-100% during discharging. The amorphous film which has optimum specific resistance of 10 OMEGAcm or higher and less trap density for a photodetector device of storage mode is obtained when the film contains 10-50 atomic % of H, and 50 atomic % or higher of contained Si, and the photodetector which has high resolution, fast responding speed, low dark current, no seizing phenomenon and extremely low image residual property can be obtained.
摘要翻译：目的：为了通过利用含有Si和H的薄的无定形薄膜具有较少的陷阱的优点来获得优选的光电检测器件，这有助于获得10 10欧姆·厘米或更高的电阻率并且干扰光传输载体。构成：将透明电极2和N型CeO 2膜9叠加在galss板1上。然后，在H 2 + Ar中，将子串保持在100-300℃，用B加入的Si作为反应性溅射靶，并且叠加具有100nm-20μm厚度的P型非晶Si的光电导膜3。在放电期间，膜3中的H密度通过将压力2×10 -3 -1×10 -1乇变化0-100％来改变。当该膜含有10-50原子％的H和50原子％以上的含有Si的非晶体膜时，获得具有10 10ΩEG·cm或更高的最佳电阻率和较低的存储模式的光电检测器件的陷阱密度的非晶膜可以得到分辨率高，响应速度快，暗电流低，无卡死现象，图像残留特性极低的光检测器。

63. 发明专利

JPS5685876A PHOTOELECTRIC CONVERTER 失效
公开(公告)号：JPS5685876A
公开(公告)日：1981-07-13
申请号：JP16154979
申请日：1979-12-14
申请人： HITACHI LTD
发明人： IMAMURA YOSHINORI , ADAKA SABUROU , TAKASAKI YUKIO , TANAKA YASUO , HIRAI TADAAKI , MARUYAMA TERUICHI
IPC分类号： H01J29/45 , H01L31/0248 , H01L31/09 , H04N5/30 , H04N5/335 , H04N5/361 , H04N5/369
摘要： PURPOSE:To reduce the dark current of a photoelectric converter by forming an SnO2 transparent electrode on a glass substrate, and interposing any of an oxide, nitride or halogenide between the electrode and an amorphous Si film formed thereon when covering the Si film on the transparent electrode as a photoelectric converter. CONSTITUTION:An SnO2 transparent electrode 2 is formed on one surface of a glass substrate 1, and a thin film 8 formed of any of an oxide, nitride and halogenide is covered thereon by sputtering. If the oxide is employed at this time, SiO2, TiO3, Al2O3, V2O5, GeO2, etc. are used, and if the nitride is employed, Si3N4, Si2N3, MgN2, etc. are used. If the halogenide is employed, halogenide such as Na, Mg, Li, Ba, etc. are used. Thereafter, an amorphous Si film 3 is evaporated on the surface of the thin film 8, and an Sb2S3 film 7 for improving the electron beam landing characteristics is further laminated thereon. Thus, even if a high target voltage is used, the dark current generated can be sufficiently reduced.

64. 发明专利

JPS55161471A SOLID IMAGE PICKUP DEVICE 失效
公开(公告)号：JPS55161471A
公开(公告)日：1980-12-16
申请号：JP6897079
申请日：1979-06-04
申请人： HITACHI LTD
发明人： KOIKE NORIO , TSUKADA TOSHIHISA , ANDOU HARUHISA , YAMAMOTO HIDEAKI , HIRAI TADAAKI , KUBO SEIJI , MARUYAMA EIICHI , UMAJI TOORU , TAKASAKI YUKIO , NAGAHARA SHIYUUSAKU
IPC分类号： H01L27/146 , H04N5/335 , H04N5/341 , H04N5/369 , H04N5/372 , H04N5/374
摘要： PURPOSE:To improve the photoelectric conversion efficiency of a solid image pickup device, by forming a photoconductive film on the scanning IC substrate which is constituted by a scanning circuit and an N or P-channel MOSFET where switch groups are integrated. CONSTITUTION:Through excitation electric charge is generated in photoconductive film 25 when a light is incident onto this film, the main material of conduction electric change is a positive hole of a high mobility, and the positive hole runs toward electrode 24 due to electric field 31 formed between the lower face of transparent electrode 26 and electrode 24 and is stored on electrode 24. The positive hole stored in one frame period is read as a signal through switch 15 and a horizontal switch and becomes a video signal when selected next.

65. 发明专利

JPH0644451B2 失效
公开(公告)号：JPH0644451B2
公开(公告)日：1994-06-08
申请号：JP11409085
申请日：1985-05-29
申请人： HITACHI LTD , JAPAN BROADCASTING CORP
发明人： TAKASAKI YUKIO , MAKISHIMA TATSUO , HIRAI TADAAKI , INOUE SHIGENORI , NONAKA IKUMITSU , OGINO TOSHIO , SHIDARA KEIICHI , YAMASHITA TAKASHI , KAWAMURA TATSURO , TANIOKA KENKICHI , HIRUMA SHIGEHISA
IPC分类号： H01J9/233

66. 发明专利

JPH02208974A SOLID-STATE IMAGE SENSING DEVICE 失效
公开(公告)号：JPH02208974A
公开(公告)日：1990-08-20
申请号：JP2861489
申请日：1989-02-09
申请人： HITACHI LTD
发明人： OZAKI TOSHIBUMI , KOIKE NORIO , TAKASAKI YUKIO , AKIYAMA TOSHIYUKI
IPC分类号： H01L27/146 , H04N5/335 , H04N5/355 , H04N5/357 , H04N5/359 , H04N5/363 , H04N5/369 , H04N5/374 , H04N5/3745 , H04N5/378
摘要： PURPOSE:To enlarge an image sensing device in dynamic range by a method wherein the image sensing device is made to have such a photoelectric transfer characteristic that a signal current change to surface illuminance change is made small near a point where a signal current becomes saturated and a minimum planar illuminance corresponding to a saturated signal current is made large. CONSTITUTION:When light rays are incident on a photoconductive film a-Se 2, a signal current flows through a resistor 5 and the voltage of a storing capacitor 6-1 becomes higher than a video bias Vv. At this point, a voltage applied to a light- transmitting electrode 1 and a pixel electrode 3 decreases due to the voltage drop caused by the current which flows through the resistor 5, an electric field applied to the photoconductive film 2 decreases in intensity, and the signal current decreases in density. But, a signal current does not change in density in an electric field region A where photoelectric conversion takes place as far as illuminance is kept constant, and on the other hand, a current amplification action takes place in a region B as sensitivity increases corresponding to the intensity of an electric field. That is, a solid-state image sensing device is made to have a knee characteristic, whereby a saturated surface illuminance can be made large even if a saturated signal current is the same, so that the image sensing device can be made large in dynamic range.

67. 发明专利

JPH02204944A IMAGE PICKUP TUBE 失效
公开(公告)号：JPH02204944A
公开(公告)日：1990-08-14
申请号：JP2367089
申请日：1989-02-03
申请人： HITACHI LTD , JAPAN BROADCASTING CORP
发明人： HIRAI TADAAKI , OGAWA HIROBUMI , SAMEJIMA KENJI , TAKASAKI YUKIO , KUMOUCHI TAKAAKI , YAMAZAKI JUNICHI , KUBOTA SETSU , TANIOKA KENKICHI , HIRUMA SHIGEHISA
IPC分类号： H01J29/45 , H01J31/38
摘要： PURPOSE:To provide an image pickup tube operable with the voltage of a target electrode or a mesh electrode boosted, without involving image distortion, shading, ripple phenomenon, and inversion phenomenon, by furnishing a high resistance insulative film in that part of the target of image pickup tube other than the effective scanning region. CONSTITUTION:A target electrode 2, photoelectric film 3, superficial layer 5 on the electron beam scanned side are piled up on a base board 1 one over another to compose an image pickup tube target. An insulative film 4 is provided between this superficial layer 5 and the photoelectric film 3 other than the effective scanning region of the target. This arrangement accomplishes equilibrium of the surface potential of the non-scanned region with the cathode potential, which suppresses generation of defective images such as image distortion, shading, ripple phenomenon, and inversion phenomenon. The higher the resistance value, the more distinctive is the effect of insulative film, but there is little effect which is lower than the dark resistance of photoelectric film. Accordingly the specific resistance of the insulative film shall preferably be over 10 OMEGA-cm.

68. 发明专利

JPH0234192B2 失效
公开(公告)号：JPH0234192B2
公开(公告)日：1990-08-01
申请号：JP10252980
申请日：1980-07-28
申请人： HITACHI LTD
发明人： ISHIOKA YOSHIO , SHIMOMOTO TAIJI , IMAMURA YOSHINORI , ADAKA SABURO , TANAKA YASUO , MATSUBARA HIROKAZU , TAKASAKI YUKIO , MARUYAMA EIICHI
IPC分类号： G03G5/08 , B05D3/02 , B05D3/04 , H01J9/233 , H01L21/205 , H01L31/04 , H01L31/08 , H01L31/10

69. 发明专利

JPH01192178A PHOTODETECTOR 失效
公开(公告)号：JPH01192178A
公开(公告)日：1989-08-02
申请号：JP1594188
申请日：1988-01-28
申请人： HITACHI LTD , JAPAN BROADCASTING CORP
发明人： TAKASAKI YUKIO , MATSUBARA HIROKAZU , TSUJI KAZUTAKA , HIRAI TADAAKI , SHIDARA KEIICHI , YAMAZAKI JUNICHI , TAKETOSHI KAZUHISA , KOSUGI MITSUO
IPC分类号： H01L31/0248 , H01L31/08 , H01L31/10 , H04N5/335 , H04N5/357 , H04N5/369
摘要： PURPOSE:To obtain an excellent red light photoconductivity by a method wherein a semiconductor layer is formed of Se as a main component, where the layer consists of an amorphous phase and a hexagonal crystal phase. CONSTITUTION:A photoconductive film 24 is composed of an amorphous Se, a hexagonal fine crystal Se mixed phase part 241, and an amorphous Se layer 242. Light rays incident through a glass substrate 21 is mostly absorbed by the mixed phase part 241. The light absorbed by an amorphous phase of the mixed phase part 242 is small in a carrier generating efficiency, so that it contributes a little to a photocurrent especially toward a red light. On the other hand, the light absorbed by a crystalline phase is large in a carrier generating efficiency, consequently it contributes much to a photocurrent even toward a long wavelength light. Photocarriers generated in a crystalline phase flow toward the amorphous Se layer 242 without flowing transversally in the mixed phase part 241, and thus a charge pattern is formed on an electron beam landing auxiliary layer corresponding to an image.

70. 发明专利

JPS6340014B2 失效
公开(公告)号：JPS6340014B2
公开(公告)日：1988-08-09
申请号：JP1154783
申请日：1983-01-28
申请人： HITACHI LTD
发明人： ADAKA SABURO , MARUYAMA EIICHI , INAO KYOHISA , IMAMURA YOSHINORI , TSUKADA TOSHIHISA , TAKASAKI YUKIO , HIRAI TADAAKI
IPC分类号： H01J29/45 , H01J31/49

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