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1. 发明专利

JPS63174480A PHOTOELECTRIC CONVERTING DEVICE 失效
公开(公告)号：JPS63174480A
公开(公告)日：1988-07-18
申请号：JP486687
申请日：1987-01-14
申请人： HITACHI LTD , JAPAN BROADCASTING CORP
发明人： ISHIOKA YOSHIO , TAKASAKI YUKIO , HIRAI TADAAKI , TSUJI KAZUTAKA , MAKISHIMA TATSUO , NONAKA IKUMITSU , KAWAMURA TATSURO , YAMASHITA TAKASHI , TAKETOSHI KAZUHISA , SHIDARA KEIICHI , ANDO FUMIHIKO , TANIOKA KENKICHI
IPC分类号： H01L27/146 , H01L31/0272 , H01L31/08 , H01L31/09 , H04N5/335 , H04N5/361 , H04N5/369 , H04N5/372 , H04N5/374
摘要： PURPOSE:To make photo response characteristic favorable by laminating an amorphous semiconductor having block type construction on a scanning substrate for reading signals and actuating with an electric field in which charge doubling action occurs in the layer of the amorphous semiconductor. CONSTITUTION:By forming a light transmitting conductive film on a glass substrate 7 and separating the light transmitting conductive film in a photo etching method, an individual reading electrode 2 is obtained. Next, on the reading electrode 2, a mask where long-sized hole is provided is made to pass through and a CeO2 thin film as a rectifier contact auxiliary layer 3 and an amorphous Se as a photo conductive film 4 are vapor-deposited by the thickness about 0.5-6mum. By depositing the light transmitting conductive film 5 on the amorphous Se layer 4 in the methods of vapor-depositing and sputtering, etc., the photoelectric conversion part is formed. By impressing the electric field in a direction where the light transmitting conductive film 5 becomes in a positive electric potential and projecting a light beam, electron positive hole pair is generated in the amorphous Se layer 4 and the charge doubling action is caused when the hole runs, so that the rapid photo response characteristic can be realized.

2. 发明专利

JPS62285350A CAMERA TUBE 失效
公开(公告)号：JPS62285350A
公开(公告)日：1987-12-11
申请号：JP12797886
申请日：1986-06-04
申请人： HITACHI LTD , JAPAN BROADCASTING CORP
发明人： TAKASAKI YUKIO , HIRAI TADAAKI , MARUYAMA MASANORI , NONAKA IKUMITSU , INOUE SHIGENORI , KATO SHINICHI , SHIDARA KEIICHI , KURASHIGE MITSUHIRO , TANIOKA KENKICHI , OKAZAKI SABURO , YAMAZAKI JUNICHI , EGAMI NORIFUMI
IPC分类号： H01J29/45 , H01J31/38
摘要： PURPOSE:To enable even a compact camera tube to have a high resolution so as to make a television camera compact, by combining a photoconductive film of decreased thickness and increased storage capacity with an electron gun whose electron beam defining aperture is made small to reduce the diameter of a scanning electron beam. CONSTITUTION:An external power supply 10 is connected between a transparent electrode 7 and a cathode 1. A photoconductive film 5 is scanned by a focused and deflected electron beam 2. As a result, the scanned surface of the photoconductive film 5 is negatively charged and has its equilibrium potential is setted nearly to the potential of a cathode 1 resulting the photoconductive film is almost charged by the external power supply. When light comes in, the electric resistance of the photoconductive film 5 drops so that the negative charge is increasingly discharged. As a result, an electric charge pattern corresponding to the quantity of the incoming light is formed on the scanning side surface of the photoconductive film 5, and the potential of the surface varies. When the photoconductive film 5 is scanned by the electron beam 2 at the next period, the electron beam landing occurs corresponding to the variation in the potential of the surface, so that a charging current nearly equal to the quantity of the discharged charge flows through current meter 11. For that reason, an optical image is converted into a time-sequential signal current. The storage capacity of the photoconductive film 5 is set at 15 muF/m to 150 muF/m .

3. 发明专利

JPS61193336A IMAGE PICKUP TUBE TARGET 失效
公开(公告)号：JPS61193336A
公开(公告)日：1986-08-27
申请号：JP3039185
申请日：1985-02-20
申请人： HITACHI LTD , JAPAN BROADCASTING CORP
发明人： INOUE SHIGENORI , NONAKA IKUMITSU , YAMAMOTO MASANAO , TANIOKA KENKICHI , KAWAMURA TATSURO
IPC分类号： H01J29/45
摘要： PURPOSE:To effectively suppress highlight burning by making the thickness of the first layer mainly composed of Se and As between a transparent conductive film and the second layer containing Te to be 9-24nm. CONSTITUTION:A photoconductive film is made by a method, in which a transparent film 2, an Se-As-LiF photoconductive layer 3 containing 6-10wt% of As and 0.4-0.8wt% of LiF, and Se-As-Te-LiF layer 4, which contains about 30wt% of Te and about 3wt% of As while to which 0.4wt% of LiF is added up to about one half of its thickness and an Se-As layer 5 consisting of a region 5a where an As density is reduced at the fixed sloping and the region 5b with the fixed density of As are piled. When thereby the thickness (5) of the layer 3 is reduced to 9-24nm, a difference in burning generated due to the difference between a red light and a blue light of a subject with high brightness and a dark current can be properly reduced to obtain an image pickup tube target giving a good pickup screen.

4. 发明专利

JPS60245283A PHOTOCONDUCTIVE FILM 失效
公开(公告)号：JPS60245283A
公开(公告)日：1985-12-05
申请号：JP10053584
申请日：1984-05-21
申请人： HITACHI LTD , JAPAN BROADCASTING CORP
发明人： TANIOKA KENKICHI , SHIDARA KEIICHI , KURIYAMA TAKAO , TAKASAKI YUKIO , HIRAI TADAAKI , NONAKA IKUMITSU , INOUE SHIGENORI
IPC分类号： H01J31/26 , H01J1/78 , H01J29/45 , H01L31/0248 , H01L31/08
摘要： PURPOSE:To obtain targets reduced in variation of the sensitivity generating immediately after actuation of an image pickup tube by a method wherein the thickness of a film containing substance which forms negative space charges in selenium is made specific. CONSTITUTION:The sensitivity is increased by adding tellurium to part of a photoconductor layer made mainly of selenium in the direction of film thickness. To either at least part of the region with addition of tellurium or at least part of the region adjacent to this region or to both thereof, an oxide and a fluoride which form negative space charges in selenium and one or more of elements belonging to the II group, III group, or VII group and forming said charges in selenium are contained at a concentration of more than 10ppm and less then 1% on the average of weight ratio. The thickness of a film containing substance which forms negative space charges in selenium as above-mentioned is 20-90Angstrom . For example, 20% concentration of As and 1,500ppm concentration of GaF3 are evenly distributed over a sensitizing auxiliary layer c' of 50Angstrom thickness in the direction of film thickness.

5. 发明专利

JPS5362419A PICK UP TUBE TARGET 失效
公开(公告)号：JPS5362419A
公开(公告)日：1978-06-03
申请号：JP13729376
申请日：1976-11-17
申请人： JAPAN BROADCASTING CORP , HITACHI LTD
发明人： NONAKA IKUMITSU , GOTOU NAOHIRO , SHIDARA KEIICHI
IPC分类号： H01J9/233 , H01J29/45 , H01J31/38 , H01L31/08
摘要： PURPOSE:To make good for the sensitivity to the target voltage or the saturating characteristic, and to decrease the dark current, by restricting the total weight of As added to the P type photo conductive film to a suitable value.

6. 发明专利

JPS51830A 失效
公开(公告)号：JPS51830A
公开(公告)日：1976-01-07
申请号：JP7021474
申请日：1974-06-21
申请人： HITACHI LTD , JAPAN BROADCASTING CORP
发明人： NONAKA IKUMITSU , GOTO TADAHIRO , SHIDARA KEIICHI
IPC分类号： H01J29/45 , H01L31/08

7. 发明专利

JPS63304551A IMAGE PICKUP TUBE AND ITS WORKING METHOD 失效
公开(公告)号：JPS63304551A
公开(公告)日：1988-12-12
申请号：JP14902387
申请日：1987-06-17
申请人： JAPAN BROADCASTING CORP , HITACHI LTD
发明人： TANIOKA KENKICHI , SHIDARA KEIICHI , KAWAMURA TATSURO , YAMAZAKI JUNICHI , HIRUMA SHIGEHISA , TAKETOSHI KAZUHISA , SUZUKI SHIRO , YAMASHITA TAKASHI , KOSUGI MITSUO , IKEDA YOSHIKAZU , AIBA MASAAKI , HIRAI TADAAKI , TAKASAKI YUKIO , ISHIOKA YOSHIO , MAKISHIMA TATSUO , SAMEJIMA KENJI , UDA TAKESHI , GOTO NAOHIRO , NONAKA IKUMITSU , INOUE SHIGENORI
IPC分类号： H01J29/45 , H01L31/08
摘要： PURPOSE:To provide an image pickup tube with low after-image, high resolution, and a greatly enhanced sensitivity by using an amorphous semi-conductor layer of specific film thickness having charge doubling function to a photo-conductive target part having check type construction. CONSTITUTION:A target part is furnished, at which a transparent electrode 2 and a photo-conductive film 3 are formed on a transparent base, and an electron beam 6 is emitted to scan the target part. This film 3 has check type contact and consists of an amorphous semi-conductor with Se as main component, and the electric field region is 5X10 -2X10 V/m and the film thickness 0.5-10mum. Here the amorphous semi-conductor layer contains elements from Te, Sb, Cd, Bi in the film thickness direction, and the mean content is from 0.01% to 50% by wt. The amorphous semi-conductor layer forms positive-hole catch level in the film direction, and the substances to form the level are selected from Li, Na, K, Mg and their fluorides, and Al, Cr, Mn and their fluorides. The local concentration of the substance forming the electron catch level within the amorphous semi-conductor layer is from 20ppm by wt. to 10% by wt.

8. 发明专利

JPS57197876A PHOTOCONDUCTIVE FILM 失效
公开(公告)号：JPS57197876A
公开(公告)日：1982-12-04
申请号：JP8091481
申请日：1981-05-29
申请人： JAPAN BROADCASTING CORP , HITACHI LTD
发明人： SHIDARA KEIICHI , TANIOKA KENKICHI , UCHIDA TERUO , KUSANO CHIYUUSHIROU , TAKASAKI YUKIO , NONAKA IKUMITSU , INOUE SHIGENORI
IPC分类号： H01L31/0248 , H01J29/45 , H01L31/08
摘要： PURPOSE:To reduce the baking of a pickup tube target by making a substance forming negative space charge in Se contain into a region adjoining to a Te added region in a photoconductor layer, the principal ingredient thereof is Se. CONSTITUTION:A transparent conductive film, the principal ingredient thereof is SnO2, is formed onto a glass substrate, Se and As2Se3 are evaporated onto the conductive film as the first layer a' and As concentration is brought to 3%, SeAs2Se3 and Te are evaporated as the second layer b' and As concentration is brought to 2%. Te concentration is brought to 25-35%, and a layer consisting of Se, As, GaF3, etc. is evaporated as the third layer c'. In this case, As concentration is reduce to 3% from 20-25% while the concentration of GaF3, etc. forming the negative space charge in Se is brought to 10ppm through 1%, and the photoconductor layer is shaped. Accordingly, the effect of baking reduction to strong beams and baking generated after a static image is picked up for a long time can be reduced.

9. 发明专利

JPS55155452A CAMERA TUBE TARGET 失效
公开(公告)号：JPS55155452A
公开(公告)日：1980-12-03
申请号：JP6264179
申请日：1979-05-23
申请人： HITACHI LTD , JAPAN BROADCASTING CORP
发明人： NONAKA IKUMITSU , HIRAI TADAAKI , MOCHIZUKI TOORU , WAKUI KOUTAROU , GOTOU NAOHIRO , YAMASHITA TAKASHI , TAKAGI HIDEAKI
IPC分类号： H01J29/45 , H01J29/02 , H01J31/26
摘要： PURPOSE:To reduce the electric resistance measured from the site of signal output terminal and to obtain electric signal of high S/N by providing the resistance layer of metallic film around the transparent conductive film. CONSTITUTION:In the circular region which is wider a little bit than that of the scanning effective plane 1a on a phase-plate 1, a transparent conductive film 2 of tin oxide is formed in the required thickness. One end of a signal out-put terminal 16 is connected to the peripheral part of the transparent conductive film 2. The other end penetrates the phase-plate 1 to its front side and is sealed airtightly. A golden evaporated film 18 is covered in a link around the outer peripheral part of the transparent conductive film and forms the layer of resistance.

10. 发明专利

JPS51829A 失效
公开(公告)号：JPS51829A
公开(公告)日：1976-01-07
申请号：JP7021374
申请日：1974-06-21
申请人： HITACHI LTD , JAPAN BROADCASTING CORP
发明人： NONAKA IKUMITSU , HIRAI TADAAKI , GOTO TADAHIRO , SHIDARA KEIICHI
IPC分类号： H01J9/233 , H01J29/45 , H01L31/08

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