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1. 发明专利

JPH0696688A IMAGE PICKUP TUBE AND OPERATION METHOD THEREFOR 失效
公开(公告)号：JPH0696688A
公开(公告)日：1994-04-08
申请号：JP15178593
申请日：1993-06-23
申请人： JAPAN BROADCASTING CORP , HITACHI LTD
发明人： TANIOKA KENKICHI , SHIDARA KEIICHI , KAWAMURA TATSURO , YAMAZAKI JUNICHI , HIRUMA SHIGEHISA , TAKETOSHI KAZUHISA , SUZUKI SHIRO , YAMASHITA TAKASHI , KOSUGI MITSUO , IKEDA YOSHITSUMI , AIBA MASAAKI , HIRAI TADAAKI , TAKASAKI YUKIO , ISHIOKA YOSHIO , MAKISHIMA TATSUO , SAMEJIMA KENJI , UDA TAKESHI , GOTO NAOHIRO , NONAKA IKUMITSU , INOUE SHIGENORI
IPC分类号： H01J29/45 , H01J31/38
摘要： PURPOSE:To provide an image pickup tube having high sensitivity, generating less afterimage and small dark current, and further having sensitivity even for incident light of long wavelength. CONSTITUTION:A photo-conductive film having a blocking type contact is constituted of a light carrier generation layer 86 for absorbing incident light and generating most of light carriers, and an electric charge multiplying layer 84 consisting of an amorphous semiconductor and having the capability of multiplying the generated light carriers. Also, this tube is operated in an electrical field zone where electrical charge is multiplied in the amorphous semiconductor.

2. 发明专利

JPS63304551A IMAGE PICKUP TUBE AND ITS WORKING METHOD 失效
公开(公告)号：JPS63304551A
公开(公告)日：1988-12-12
申请号：JP14902387
申请日：1987-06-17
申请人： JAPAN BROADCASTING CORP , HITACHI LTD
发明人： TANIOKA KENKICHI , SHIDARA KEIICHI , KAWAMURA TATSURO , YAMAZAKI JUNICHI , HIRUMA SHIGEHISA , TAKETOSHI KAZUHISA , SUZUKI SHIRO , YAMASHITA TAKASHI , KOSUGI MITSUO , IKEDA YOSHIKAZU , AIBA MASAAKI , HIRAI TADAAKI , TAKASAKI YUKIO , ISHIOKA YOSHIO , MAKISHIMA TATSUO , SAMEJIMA KENJI , UDA TAKESHI , GOTO NAOHIRO , NONAKA IKUMITSU , INOUE SHIGENORI
IPC分类号： H01J29/45 , H01L31/08
摘要： PURPOSE:To provide an image pickup tube with low after-image, high resolution, and a greatly enhanced sensitivity by using an amorphous semi-conductor layer of specific film thickness having charge doubling function to a photo-conductive target part having check type construction. CONSTITUTION:A target part is furnished, at which a transparent electrode 2 and a photo-conductive film 3 are formed on a transparent base, and an electron beam 6 is emitted to scan the target part. This film 3 has check type contact and consists of an amorphous semi-conductor with Se as main component, and the electric field region is 5X10 -2X10 V/m and the film thickness 0.5-10mum. Here the amorphous semi-conductor layer contains elements from Te, Sb, Cd, Bi in the film thickness direction, and the mean content is from 0.01% to 50% by wt. The amorphous semi-conductor layer forms positive-hole catch level in the film direction, and the substances to form the level are selected from Li, Na, K, Mg and their fluorides, and Al, Cr, Mn and their fluorides. The local concentration of the substance forming the electron catch level within the amorphous semi-conductor layer is from 20ppm by wt. to 10% by wt.

3. 发明专利

JPS57197876A PHOTOCONDUCTIVE FILM 失效
公开(公告)号：JPS57197876A
公开(公告)日：1982-12-04
申请号：JP8091481
申请日：1981-05-29
申请人： JAPAN BROADCASTING CORP , HITACHI LTD
发明人： SHIDARA KEIICHI , TANIOKA KENKICHI , UCHIDA TERUO , KUSANO CHIYUUSHIROU , TAKASAKI YUKIO , NONAKA IKUMITSU , INOUE SHIGENORI
IPC分类号： H01L31/0248 , H01J29/45 , H01L31/08
摘要： PURPOSE:To reduce the baking of a pickup tube target by making a substance forming negative space charge in Se contain into a region adjoining to a Te added region in a photoconductor layer, the principal ingredient thereof is Se. CONSTITUTION:A transparent conductive film, the principal ingredient thereof is SnO2, is formed onto a glass substrate, Se and As2Se3 are evaporated onto the conductive film as the first layer a' and As concentration is brought to 3%, SeAs2Se3 and Te are evaporated as the second layer b' and As concentration is brought to 2%. Te concentration is brought to 25-35%, and a layer consisting of Se, As, GaF3, etc. is evaporated as the third layer c'. In this case, As concentration is reduce to 3% from 20-25% while the concentration of GaF3, etc. forming the negative space charge in Se is brought to 10ppm through 1%, and the photoconductor layer is shaped. Accordingly, the effect of baking reduction to strong beams and baking generated after a static image is picked up for a long time can be reduced.

4. 发明专利

JPS62285350A CAMERA TUBE 失效
公开(公告)号：JPS62285350A
公开(公告)日：1987-12-11
申请号：JP12797886
申请日：1986-06-04
申请人： HITACHI LTD , JAPAN BROADCASTING CORP
发明人： TAKASAKI YUKIO , HIRAI TADAAKI , MARUYAMA MASANORI , NONAKA IKUMITSU , INOUE SHIGENORI , KATO SHINICHI , SHIDARA KEIICHI , KURASHIGE MITSUHIRO , TANIOKA KENKICHI , OKAZAKI SABURO , YAMAZAKI JUNICHI , EGAMI NORIFUMI
IPC分类号： H01J29/45 , H01J31/38
摘要： PURPOSE:To enable even a compact camera tube to have a high resolution so as to make a television camera compact, by combining a photoconductive film of decreased thickness and increased storage capacity with an electron gun whose electron beam defining aperture is made small to reduce the diameter of a scanning electron beam. CONSTITUTION:An external power supply 10 is connected between a transparent electrode 7 and a cathode 1. A photoconductive film 5 is scanned by a focused and deflected electron beam 2. As a result, the scanned surface of the photoconductive film 5 is negatively charged and has its equilibrium potential is setted nearly to the potential of a cathode 1 resulting the photoconductive film is almost charged by the external power supply. When light comes in, the electric resistance of the photoconductive film 5 drops so that the negative charge is increasingly discharged. As a result, an electric charge pattern corresponding to the quantity of the incoming light is formed on the scanning side surface of the photoconductive film 5, and the potential of the surface varies. When the photoconductive film 5 is scanned by the electron beam 2 at the next period, the electron beam landing occurs corresponding to the variation in the potential of the surface, so that a charging current nearly equal to the quantity of the discharged charge flows through current meter 11. For that reason, an optical image is converted into a time-sequential signal current. The storage capacity of the photoconductive film 5 is set at 15 muF/m to 150 muF/m .

5. 发明专利

JPS61297097A VACUUM DEVICE 失效
公开(公告)号：JPS61297097A
公开(公告)日：1986-12-27
申请号：JP13777485
申请日：1985-06-26
申请人： HITACHI LTD , JAPAN BROADCASTING CORP
发明人： TAKASAKI YUKIO , INOUE SHIGENORI , KAWAMURA TATSURO , SHIDARA KEIICHI , YAMAZAKI JUNICHI
IPC分类号： B25J21/00

6. 发明专利

JPS61193337A IMAGE PICKUP TUBE TARGET 失效
公开(公告)号：JPS61193337A
公开(公告)日：1986-08-27
申请号：JP3039285
申请日：1985-02-20
申请人： HITACHI LTD , JAPAN BROADCASTING CORP
发明人： YAMAMOTO MASANAO , INOUE SHIGENORI , SHIDARA KEIICHI , HIRUMA SHIGEHISA
IPC分类号： H01J29/45
摘要： PURPOSE:To prevent burning due to a difference in sensitiveness between the photoincident and non-incident parts by making an As density distribution of the layer containing red sensitiveness increasing agent Te small on the side of a transparent conductive film while large on the side of a beam reaching layer for reducing the V-I delay (reduced leading-out amount of a signal current). CONSTITUTION:The carrier generation layers 2-4 are piled up on a transparent conductive film 1 while the layer 3 contains Te and an As density increases from the layer 2 side to the layer 4 side. The layers 2 and 4 contain the high density of As while increasing thermal stability such as the prevention of Te diffusion or the like. A very small amount of LiF is added to a part of the layers 2 and 3. A carrier transit layer 51 and an Sb2S3 beam reaching layer 6 are piled up for making an image pickup tube target. Since the layer 3 containing Te is given said density sloping, the time constant of trapping and emission of positive holes and electrons is shortened while the tapping precedence at the time of thermal fluctuation reduces thus to decrease fluctuation in an inner electric field while reducing V-I delay and the burning generated due to a difference in sensitiveness between the photoincident and non-incident parts thus being able to obtain an image pickup tube target having high reliability.

7. 发明专利

JPS61193336A IMAGE PICKUP TUBE TARGET 失效
公开(公告)号：JPS61193336A
公开(公告)日：1986-08-27
申请号：JP3039185
申请日：1985-02-20
申请人： HITACHI LTD , JAPAN BROADCASTING CORP
发明人： INOUE SHIGENORI , NONAKA IKUMITSU , YAMAMOTO MASANAO , TANIOKA KENKICHI , KAWAMURA TATSURO
IPC分类号： H01J29/45
摘要： PURPOSE:To effectively suppress highlight burning by making the thickness of the first layer mainly composed of Se and As between a transparent conductive film and the second layer containing Te to be 9-24nm. CONSTITUTION:A photoconductive film is made by a method, in which a transparent film 2, an Se-As-LiF photoconductive layer 3 containing 6-10wt% of As and 0.4-0.8wt% of LiF, and Se-As-Te-LiF layer 4, which contains about 30wt% of Te and about 3wt% of As while to which 0.4wt% of LiF is added up to about one half of its thickness and an Se-As layer 5 consisting of a region 5a where an As density is reduced at the fixed sloping and the region 5b with the fixed density of As are piled. When thereby the thickness (5) of the layer 3 is reduced to 9-24nm, a difference in burning generated due to the difference between a red light and a blue light of a subject with high brightness and a dark current can be properly reduced to obtain an image pickup tube target giving a good pickup screen.

8. 发明专利

JPS60245283A PHOTOCONDUCTIVE FILM 失效
公开(公告)号：JPS60245283A
公开(公告)日：1985-12-05
申请号：JP10053584
申请日：1984-05-21
申请人： HITACHI LTD , JAPAN BROADCASTING CORP
发明人： TANIOKA KENKICHI , SHIDARA KEIICHI , KURIYAMA TAKAO , TAKASAKI YUKIO , HIRAI TADAAKI , NONAKA IKUMITSU , INOUE SHIGENORI
IPC分类号： H01J31/26 , H01J1/78 , H01J29/45 , H01L31/0248 , H01L31/08
摘要： PURPOSE:To obtain targets reduced in variation of the sensitivity generating immediately after actuation of an image pickup tube by a method wherein the thickness of a film containing substance which forms negative space charges in selenium is made specific. CONSTITUTION:The sensitivity is increased by adding tellurium to part of a photoconductor layer made mainly of selenium in the direction of film thickness. To either at least part of the region with addition of tellurium or at least part of the region adjacent to this region or to both thereof, an oxide and a fluoride which form negative space charges in selenium and one or more of elements belonging to the II group, III group, or VII group and forming said charges in selenium are contained at a concentration of more than 10ppm and less then 1% on the average of weight ratio. The thickness of a film containing substance which forms negative space charges in selenium as above-mentioned is 20-90Angstrom . For example, 20% concentration of As and 1,500ppm concentration of GaF3 are evenly distributed over a sensitizing auxiliary layer c' of 50Angstrom thickness in the direction of film thickness.

9. 发明专利

JPH0644451B2 失效
公开(公告)号：JPH0644451B2
公开(公告)日：1994-06-08
申请号：JP11409085
申请日：1985-05-29
申请人： HITACHI LTD , JAPAN BROADCASTING CORP
发明人： TAKASAKI YUKIO , MAKISHIMA TATSUO , HIRAI TADAAKI , INOUE SHIGENORI , NONAKA IKUMITSU , OGINO TOSHIO , SHIDARA KEIICHI , YAMASHITA TAKASHI , KAWAMURA TATSURO , TANIOKA KENKICHI , HIRUMA SHIGEHISA
IPC分类号： H01J9/233

10. 发明专利

JPS62223951A PHOTOCONDUCTIVE FILM 失效
公开(公告)号：JPS62223951A
公开(公告)日：1987-10-01
申请号：JP6576086
申请日：1986-03-26
申请人： HITACHI LTD , JAPAN BROADCASTING CORP
发明人： TAKASAKI YUKIO , MAKISHIMA TATSUO , TSUJI KAZUTAKA , HIRAI TADAAKI , INOUE SHIGENORI , NONAKA IKUMITSU , GOTO NAOHIRO , YAMAMOTO MASANAO , SHIDARA KEIICHI , TANIOKA KENKICHI , YAMASHITA TAKASHI , KAWAMURA TATSURO , HIRUMA SHIGEHISA , SUZUKI SHIRO , AIBA MASAAKI
IPC分类号： H01J29/45
摘要： PURPOSE:To reduce the burning of a photoconductive film during operation at a high temperature by constructing the photoconductive film so as to have a p-type photoconductive film and a n-type electro-conductive film and the said p-type photoconductive film has in its portion a layer containing a specified quantity of Te and a layer containing a specified quantity of a material producing shallow levels. CONSTITUTION:A photoconductive film is constructed so as to have a p-type photoconductive film composed mainly of amorphous Se and a n-type conductive film producing a rectifying contact at the interface between the film and the p-type photoconductive film, and it is used as a target for an image pick-up tube by applying an inverse bias voltage to the rectifying contact. Here, the p-type photoconductive film is constructed so as to have in its portion a layer containing 35-60wt% of Te and a layer containing 0.005-5wt% of a material such as LiF, NaF, MgF2 or the like considered to produce shallow levels. Therefore by regulating the concentration of Te and LiF or the like adequate burning characteristics can be obtained without the deterioration of the tube characteristics even when the operation temperature becomes high.

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