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    • 7. 发明专利
    • Boat for vapor deposition
    • 蒸汽沉积船
    • JPS58221273A
    • 1983-12-22
    • JP10382982
    • 1982-06-18
    • Hitachi Ltd
    • OGINO TOSHIO
    • C23C14/26C23C14/24
    • C23C14/243
    • PURPOSE:To prevent the leakage and exudation of a material from a boat for vapor deposition having a double boat structure composed of a top cover, an inner cover and a bottom cover, by cutting a groove around the material reservoir of the bottom cover boat and by attaching a return bent part corresponding to the groove to the inner cover boat. CONSTITUTION:A boat for vapor deposition is composed of a bottom cover boat 1, an inner cover boat 2 and a top cover boat 3, and a material reservoir 5 for holding a material for vapor deposition is formed in the boat 1. Vapor holes 2a, 3a through which an evaporated material flies out are pierced in the boats 2, 3. A groove 6 is cut around the reservoir 5 of the boat 1, a return bent part 7 corresponding to the groove 6 in the boat 1 is attached to the boat 2, and the part 7 is fitted to the groove 6.
    • 目的:为了防止材料从具有由顶盖,内盖和底盖构成的双船结构的蒸汽沉积物的泄漏和渗出,通过在底盖船的材料储存器周围切割槽,以及 通过将对应于槽的返回弯曲部分附接到内盖船。 构成:用于气相沉积的船由底盖船1,内盖船2和顶盖舟3组成,并且在船1中形成用于保持用于气相沉积的材料的材料储存器5.蒸气孔2a 3a中,蒸发的材料通过其流出在船2,3中。围绕船1的贮存器5切割槽6,对应于船1中的槽6的返回弯曲部分7附接到 船2,部分7装配到槽6。
    • 8. 发明专利
    • MANUFACTURE OF GERMANIUMMOXIDE FILM FOR PICTURE TUBE TARGET
    • JPS5696443A
    • 1981-08-04
    • JP17450080
    • 1980-12-12
    • HITACHI LTD
    • NONAKA IKUMITSUOGINO TOSHIO
    • H01J9/233H01L31/00
    • PURPOSE:To obtain a target with a decreased dark-current value by preserving a base plate with relative humidity less than the prescribed level and a nesa film set on the base plate before a germanium-oxide film is formed over the base plate and the nesa film, and followed by the formation of a photoconductive layer either straight on the germanium-oxide film or with a cerium-oxide film interposed between the germanium-oxide film and the photoconductive layer. CONSTITUTION:A nesa film 2 and a germanium-oxide film 3 are formed over a glass base-plate 1, in that order. Next, a photoconductive layer 5 is formed through vacuum evaporation either straight on the film 3 or with a thin conductive layer 4 made of a composite material which comprises not less than one of zinc selenide, zinc oxide and cerium oxide, thus a target being constituted. Before forming the film 3, the base plate 1 and the nesa film 2 should be preserved in a place where relative humidity is below 10%. As a result, no adhesive moisture is allowed to occur between the nesa film 2 and the film 3, and the deterioration of the hole injection- proof effect which is caused from the nesa-film side is prevented. Consequently, a target with an effectively small value of dark current can be obtained.