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51. 发明申请

WO2008012788A1 A MICROFLUIDIC DEVICE FOR CONTROLLED MOVEMENT OF MATERIAL AND A METHOD FOR DELIVERING A MATERIAL FROM A MICROFLUIDIC DEVICE 审中-公开
标题翻译：用于控制材料运动的微流体装置和从微流体装置传送材料的方法
公开(公告)号：WO2008012788A1
公开(公告)日：2008-01-31
申请号：PCT/IE2007/000074
申请日：2007-07-30
申请人： JANISYS LIMITED , ZHANG, Sean, Xiao-An , BECK, Patricia, A. , NICKEL, Janice, H.
发明人： ZHANG, Sean, Xiao-An , BECK, Patricia, A. , NICKEL, Janice, H.
IPC分类号： B01L3/00
CPC分类号： B01L3/0268 , A61M5/14244 , A61M5/14586 , A61M5/14593 , A61M5/172 , A61M37/0015 , A61M2005/14252 , A61M2205/3653 , B01L2400/0442 , B01L2400/046 , B01L2400/0481 , Y10T117/102 , Y10T117/104 , Y10T137/85978
摘要： A microfluidic device (100) for controllably moving a material of interest (102) includes a holding cavity (108) configured to hold the material of interest (102) and at least one actuator (120) configured to induce an activation material (116) to expand or contract. Expansion of the activation material (116) decreases the size of the holding cavity (108) to cause the material of interest (102) to be released from the holding cavity (108) and contraction of the activation material (116) increases the size of the holding cavity (108) to cause the material of interest (102) to be received into the holding cavity (108). The at least one actuator (120) is operable at multiple levels between a zero induction level to a maximum induction level on the activation material (116) to thereby controllably expand or contract the holding cavity (108) to release or receive a specified volume of the material of interest (102).
摘要翻译：用于可控地移动感兴趣的材料（102）的微流体装置（100）包括构造成保持感兴趣的材料（102）的保持腔（108）和被配置为诱导活化材料（116）的至少一个致动器（120）扩大或收缩。激活材料（116）的膨胀减小了保持腔（108）的尺寸，以使感兴趣的材料（102）从保持腔（108）释放并且活化材料（116）的收缩增大了所述保持腔（108）将感兴趣的材料（102）接收到所述保持腔（108）中。所述至少一个致动器（120）可在致动材料（116）上的零感应电平与最大感应电平之间的多个水平处操作，从而可控地扩张或收缩保持腔（108）以释放或接收指定体积感兴趣的材料（102）。

52. 发明申请

WO2007127657A2 INCREASED POLYSILICON DEPOSITION IN A CVD REACTOR 审中-公开
标题翻译：在CVD反应器中增加多晶硅沉积
公开(公告)号：WO2007127657A2
公开(公告)日：2007-11-08
申请号：PCT/US2007066923
申请日：2007-04-19
申请人： GT SOLAR INC , WAN YUEPENG , PARTHASARATHY SANTHANA RAGHAVA , CHARTIER CARL , SERVINI ADRIAN , KHATTAK CHANDRA P
发明人： WAN YUEPENG , PARTHASARATHY SANTHANA RAGHAVA , CHARTIER CARL , SERVINI ADRIAN , KHATTAK CHANDRA P
IPC分类号： C23C16/00
CPC分类号： C23C16/24 , C01B33/035 , C23C16/4418 , C23C16/458 , Y10T117/10 , Y10T117/102 , Y10T117/1024 , Y10T117/1032 , Y10T117/104
摘要： A method and process for the production of bulk polysilicon by chemical vapor deposition (CVD) where conventional silicon "slim rods" commonly used in Siemens-type reactors are replaced with shaped silicon filaments of similar electrical properties but larger surface areas, such as silicon tubes, ribbons, and other shaped cross sections. Silicon containing gases, such as chlorosilane or silane, are decomposed and form a silicon deposit on the hot surfaces of the filaments The larger starting surface areas of these filaments ensures a higher production rate without changing the reactor size, and without increasing the number and length of the filaments. Existing reactors need only the adaptation or replacement of filament supports to use the new filaments. The filaments are grown from silicon melt by Edge-defined, Film-fed Growth (EFG) method. This also enables the doping of the filaments and simplification of power supplies for new reactors.
摘要翻译：通过化学气相沉积（CVD）生产大块多晶硅的方法和方法，其中西门子型反应器中通常使用的常规硅“细棒”被具有类似电性能但较大表面积的成形硅丝替代，例如硅管，丝带和其他形状的横截面。诸如氯硅烷或硅烷的含硅气体被分解并在长丝的热表面上形成硅沉积物。这些长丝的较大的起始表面积确保了更高的生产速率，而不改变反应器尺寸，并且不增加数量和长度的长丝。现有的反应器仅需要适应或替换长丝支撑来使用新的长丝。通过边缘定义的薄膜进料生长（EFG）法从硅熔体生长长丝。这也使得可以掺杂长丝并简化新型反应器的电源。

53. 发明申请

WO2006108191A2 SEVENTY FIVE MILLIMETER SILICON CARBIDE WAFER WITH LOW WARP, BOW, AND TTV 审中-公开
标题翻译：第三款具有低WARP，BOW和TTV的MILLIMETER SILICON CARBIDE WAFER
公开(公告)号：WO2006108191A2
公开(公告)日：2006-10-12
申请号：PCT/US2006013757
申请日：2006-04-07
申请人： CREE INC , POWELL ADRIAN , BRIXIUS WILLIAM H , LEONARD ROBERT TYLER , MCCLURE DAVIS MCCLURE , LAUGHNER MICHAEL PAUL
发明人： POWELL ADRIAN , BRIXIUS WILLIAM H , LEONARD ROBERT TYLER , MCCLURE DAVIS MCCLURE , LAUGHNER MICHAEL PAUL
CPC分类号： H01L29/66068 , C30B23/00 , C30B29/36 , C30B33/00 , H01L21/02024 , H01L21/02378 , H01L21/0243 , H01L21/0254 , H01L29/1608 , Y10T117/10 , Y10T117/1004 , Y10T117/102 , Y10T428/21
摘要： A high quality single crystal wafer of SiC is disclosed. The wafer has a diameter of at least about 3 inches, a warp of less than about 5 µm, a bow less than about 5 µm, and a total thickness variation of less than about 2.0 µm.
摘要翻译：公开了一种高质量的SiC晶圆。晶片具有至少约3英寸的直径，小于约5μm的翘曲，小于约5μm的弓和小于约2.0μm的总厚度变化。

54. 发明申请

WO01085613A1 POLYCRYSTALLINE SILICON AND PROCESS AND APPARATUS FOR PRODUCING THE SAME 审中-公开
标题翻译：多晶硅及其制造方法及装置
公开(公告)号：WO01085613A1
公开(公告)日：2001-11-15
申请号：PCT/JP2001/003865
申请日：2001-05-09
IPC分类号： B01J10/00 , C01B33/03 , C01B33/02
CPC分类号： B01J19/24 , B01J10/005 , B01J2219/0009 , B01J2219/00094 , B01J2219/00159 , C01B33/03 , Y10S117/902 , Y10T117/1016 , Y10T117/102 , Y10T428/2982
摘要： A polycrystalline silicon which has bubbles therein and has an apparent density of 2.20 g/cm or lower. In crushing, the amount of fine particles generated is extremely small and the silicon can be easily pulverized. This silicon is produced by keeping silicon molten in the presence of hydrogen, naturally dropping droplets of the resultant hydrogen-containing silicon over 0.2 to 3 seconds, and cooling the falling droplets to such a degree that hydrogen bubbles are confined therein. This silicon is produced in an apparatus which comprises a cylindrical vessel where silicon is precipitated and melted and a chlorosilane feed pipe inserted into the cylindrical vessel so as to extend to the silicon melting zone in the vessel, and which has a structure for supplying a sealing gas to the space between the cylindrical vessel and the chlorosilane feed pipe.
摘要翻译：在其中具有气泡并具有2.20g / cm 3或更低的表观密度的多晶硅。在破碎时，产生的微粒的量非常小，硅容易粉碎。该硅通过在氢气存在下保持硅熔融而产生，自然地将所得含氢硅的液滴滴下0.2至3秒钟，并将滴下的液滴冷却至其中氢气泡被限制的程度。该硅在包括硅沉淀和熔融的圆柱形容器和插入圆柱形容器中的氯硅烷进料管延伸到容器中的硅熔化区的装置中制造，并且具有用于提供密封的结构气体到圆柱形容器和氯硅烷进料管之间的空间。

55. 发明申请

WO1990008732A1 METHOD AND APPARATUS FOR CONTINUOUS CONTROLLED PRODUCTION OF SINGLE CRYSTAL WHISKERS 审中-公开
标题翻译：连续控制生产单晶玻璃的方法和装置
公开(公告)号：WO1990008732A1
公开(公告)日：1990-08-09
申请号：PCT/US1990000546
申请日：1990-01-30
申请人： MILEWSKI, John, V.
IPC分类号： C01B21/064
CPC分类号： C30B25/005 , C30B29/36 , C30B29/38 , C30B29/403 , Y10T117/102
摘要： Described herein is a method and apparatus for continuously growing single crystal whiskers (11) of silicon carbide, silicon nitride, boron carbide and boron nitride by the VLS process under controlled reaction conditions. A growth substrate such as a plate (2) of solid graphite is coated with a suitable VLS catalyst (4) and is conveyed through a tubular furnace (5), into which are separately introduced two feed gases (6, 15). The first feed gas (6) contains a cationic suboxide precursor such as silicon monoxide or boron monoxide. The second feed gas (15) contains an anionic precursor compound such as methane or ammonia. The precursor compounds react upon exposure to the catalyst by the VLS process to produce crystalline whiskers. The associated apparatus includes a conveyor assembly (1) that continuously circulates multiple substrate growth plates (2) through the furnace and past a harvesting device (12) which brushes the whiskers (11) from the plates and removes them by vacuum collection (13). Whiskers of uniform size, shape, and purity are produced.
摘要翻译：本文描述了一种用于在受控反应条件下通过VLS工艺连续生长碳化硅，氮化硅，碳化硼和氮化硼的单晶晶须（11）的方法和装置。生长衬底例如固体石墨板（2）用合适的VLS催化剂（4）涂覆，并通过管式炉（5）输送，其中分别引入两种进料气体（6,15）。第一进料气体（6）含有阳离子低氧化物前体，例如一氧化硅或一氧化硼。第二进料气体（15）含有阴离子前体化合物如甲烷或氨。前体化合物通过VLS工艺暴露于催化剂时产生晶体晶须。相关联的设备包括输送机组件（1），其将多个基板生长板（2）连续循环通过炉并经过从板上刷出晶须（11）并通过真空收集（13）去除它们的收获装置（12）。产生均匀尺寸，形状和纯度的晶须。

56. 发明授权

EP2533331B1 Structured particles composed of silicon or a silicon-based material and method of fabricating thereof 有权转让
标题翻译：由硅或硅基材料构成的结构化颗粒及其制造方法
公开(公告)号：EP2533331B1
公开(公告)日：2015-08-19
申请号：EP12182852.9
申请日：2008-07-17
申请人： Nexeon Limited
发明人： Liu, Feng-Ming , Green, Mino
IPC分类号： H01M4/38 , H01M4/134 , H01M4/1395 , H01M4/04 , H01M10/52
CPC分类号： H01M4/134 , H01M4/0492 , H01M4/1395 , H01M4/386 , H01M10/52 , H01M2004/027 , Y02E60/122 , Y02P70/54 , Y10T29/49108 , Y10T117/102 , Y10T428/2982
摘要： Pillared particles of silicon or silicon-comprising material and a method of fabricating the same. These particles may be used to create both a composite anode structure with a polymer binder, a conductive additive and a metal foil current collector, and an electrode structure. The structure of the particles overcoming the problems of charge/discharge capacity loss.

57. 发明授权

EP1514958B1 APPARATUS FOR OBTAINING A BULK SINGLE CRYSTAL USING SUPERCRITICAL AMMONIA 有权
标题翻译：器具，用于产生批量单一使用超临界氨
公开(公告)号：EP1514958B1
公开(公告)日：2014-05-14
申请号：EP02788783.5
申请日：2002-12-11
申请人： Ammono S.A. , Nichia Corporation
发明人： DWILINSKI, Robert , DORADZINSKI, Roman , GARCZYNSKI, Jerzy , SIERZPUTOWSKI, Leszek , KANBARA, Yasuo, NICHIA CORPORATION
IPC分类号： C30B29/40 , C30B7/08 , C30B7/10
CPC分类号： C30B7/10 , C30B7/00 , C30B7/08 , C30B29/406 , Y10T117/10 , Y10T117/102 , Y10T117/1024

58. 发明公开

EP2183804A2 A METHOD OF FABRICATING STRUCTURED PARTICLES COMPOSED OF SILICON OR A SILICON-BASED MATERIAL AND THEIR USE IN LITHIUM RECHARGEABLE BATTERIES 有权
标题翻译：用于生产硅或从硅基材料复合结构体粒子及其使用锂电池可充电
公开(公告)号：EP2183804A2
公开(公告)日：2010-05-12
申请号：EP08775982.5
申请日：2008-07-17
申请人： Nexeon Limited
发明人： GREEN, Mino
IPC分类号： H01M4/38 , H01M4/66 , H01M4/04 , H01M10/40 , H01M4/48 , C01B33/02
CPC分类号： H01M4/134 , H01M4/0492 , H01M4/1395 , H01M4/386 , H01M10/52 , H01M2004/027 , Y02E60/122 , Y02P70/54 , Y10T29/49108 , Y10T117/102 , Y10T428/2982
摘要： Pillared particles of silicon or silicon-comprising material and a method of fabricating the same. These particles may be used to create both a composite anode structure with a polymer binder, a conductive additive and a metal foil current collector, and an electrode structure. The structure of the particles overcoming the problems of charge/discharge capacity loss.

59. 发明公开

EP2094884A1 METHOD AND APPARATUS FOR THE PRODUCTION OF CRYSTALLINE SILICON SUBSTRATES 审中-公开
标题翻译：方法和设备制造的晶体硅基板
公开(公告)号：EP2094884A1
公开(公告)日：2009-09-02
申请号：EP07843197.0
申请日：2007-09-26
申请人： BP Corporation North America Inc.
发明人： CLARK, Roger F.
IPC分类号： C30B15/06 , C30B29/06
CPC分类号： C30B15/14 , C30B15/007 , C30B15/06 , C30B29/06 , Y10T117/10 , Y10T117/102 , Y10T117/1048 , Y10T117/1068 , Y10T117/1092
摘要： An apparatus and method for producing a crystalline ribbon continuously from a melt pool of liquid feed material, e.g. silicon. The silicon is melted and flowed into a growth tray to provide a melt pool of liquid silicon. Heat is passively extracted by allowing heat to flow from the melt pool up through a chimney. Heat is simultaneously applied to the growth tray to keep the silicon in its liquid phase while heat loss is occurring through the chimney. A template is placed in contact with the melt pool as heat is lost through the chimney so that the silicon starts to 'freeze' (i.e. solidify) and adheres to the template. The template is then pulled from the melt pool thereby producing a continuous ribbon of crystalline silicon.

60. 发明公开

EP2057304A2 METHOD AND APPARATUS FOR FORMING A SILICON WAFER 审中-公开
标题翻译：方法和设备用于生产硅晶片
公开(公告)号：EP2057304A2
公开(公告)日：2009-05-13
申请号：EP07844643.2
申请日：2007-10-26
申请人： Evergreen Solar Inc.
发明人： VAN GLABBEEK, Leo , ATCHLEY, Brian , JANOCH, Robert, E. , ANSELMO, Andrew, P. , REITSMA, Scott
IPC分类号： C30B15/00 , C30B33/00
CPC分类号： C30B15/005 , C30B15/34 , C30B33/00 , Y10T117/102
摘要： A furnace for growing a ribbon crystal has a channel for growing a ribbon crystal at a given rate in a given direction, and a separating mechanism for separating a portion from the growing ribbon crystal. At least a part of the separating mechanism moves at about the given rate and in about the given direction while separating the portion from the growing ribbon crystal.

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