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1. 发明专利

JP2017533172A 単結晶ガリウム含有窒化物の製造方法及びこの方法により製造された単結晶ガリウム含有窒化物审中-公开
公开(公告)号：JP2017533172A
公开(公告)日：2017-11-09
申请号：JP2017533998
申请日：2015-09-09
申请人：アンモノソエテ・アノニムダブリュユパドロスキリキダシネAmmono S.A. W Upadlosci Likwidacyjnej , アンモノソエテ・アノニムダブリュユパドロスキリキダシネAmmono S.A. W Upadlosci Likwidacyjnej
发明人：クシャルスキー，ロベルト , ザヤック，マルチン , フィズクゾラ，ドロタ , コロルクズク，ヴェロニカ
IPC分类号： C30B29/38 , C30B7/10
CPC分类号： C30B7/105 , C01B21/0632 , C01P2002/52 , C01P2006/40 , C30B7/14 , C30B29/406 , Y02P20/544
摘要：本発明の主題は、超臨界アンモニア溶媒環境下において、I族元素(IUPAC、1989)を含む鉱化剤を添加して、ガリウムを含有する原料物質からガリウム含有窒化物の単結晶を製造する方法において、オートクレーブ中、2つの温度ゾーン、すなわち、前記原料物質を有する、より低温の溶解ゾーン、及び、少なくとも1つのシードを有し、前記溶解ゾーンより下に位置する、より高温の結晶化ゾーンが作られ、前記原料物質の溶解プロセス、及び、少なくとも1つのシード上でのガリウム含有窒化物の結晶化が行われる方法であって、少なくとも2つのさらなる構成要素、すなわち、c)アンモニアに対するモル比が0.0001〜0.2である酸素ゲッター、d)アンモニアに対するモル比が0.1以下であるアクセプタドーパントがプロセス環境に導入され、前記アクセプタドーパントは、マンガン、鉄、バナジウム、炭素、又はそれらの組合せを含んでいることを特徴とする方法である。本発明はまた、この方法により製造された単結晶ガリウム含有窒化物を含む。

2. 发明专利

JP5309395B2 High electron mobility transistor (hemt) board 有权
公开(公告)号：JP5309395B2
公开(公告)日：2013-10-09
申请号：JP2009199105
申请日：2009-08-29
申请人：アンモノ・スプウカ・アクツィイナAmmono S.A.
发明人：ロベルトドヴィリニスキ , ロマンドラジニスキ , イエジガルチニスキ , レシェックペシェシュプトフスキ , ヤスオカンバラ
IPC分类号： C30B29/38 , C30B7/10 , H01L21/20 , H01L21/335 , H01L29/20
CPC分类号： H01L29/66462 , H01L29/2003
摘要： The invention relates to a new High Electron Mobility Transistor (HEMT), made essentially of layers of Group XIII element(s) nitride(s). Contrary to currently available transistors of this type, the transistor according to the invention is produced on a homosubstrate made of gallium-containing nitride, has no nucleation layer and its buffer layer is remarkably thinner than in known HEMTs. Preferably, at least the buffer layer, being a part of the transistor according to the present invention, is produced by epitaxial methods and the direction of growth of said layer in an epitaxial process is essentially perpendicular to the direction of growth of the substrate. The invention relates also to a method of manufacturing of High Electron Mobility Transistor (HEMT).

3. 发明专利

JP5291932B2 A method of manufacturing a single crystal, and bulk single crystal of gallium-containing nitride 有权
公开(公告)号：JP5291932B2
公开(公告)日：2013-09-18
申请号：JP2007525083
申请日：2005-11-28
申请人：アンモノ・スプウカ・アクツィイナAmmono S.A. , 日亜化学工業株式会社
发明人：ロベルト・ドヴィリニスキ , ロマン・ドラジニスキ , イエジ・ガルチニスキ , レシェック・シェシュプトフスキ , 康雄神原
IPC分类号： C30B29/38 , C30B7/10
CPC分类号： H01S5/34333 , B82Y20/00 , C30B7/00 , C30B7/10 , C30B29/403 , C30B29/406 , H01S5/2214 , H01S5/2231 , H01S2301/173 , H01S2304/04
摘要： The present invention is related to a process for obtaining a larger area substrate of mono-crystalline gallium-containing nitride by making selective crystallization of gallium containing nitride on a smaller seed under a crystallization temperature and/or pressure from a supercritical ammonia-containing solution made by dissolution of gallium-containing feedstock in a supercritical ammonia-containing solvent with alkali metal ions, comprising: providing two or more elementary seeds, and making selective crystallization on the two or more separate elementary seeds to get a merged larger compound seed. The merged larger compound seed is used for a seed in a new growth process and then to get a larger substrate of mono-crystal gallium-containing nitride.

4. 发明申请

US20170253990A1 A METHOD FOR PRODUCING MONOCRYSTALLINE GALLIUM CONTAINING NITRIDE AND MONOCRYSTALLINE GALLIUM CONTAINING NITRIDE, PREPARED WITH THIS METHOD 审中-公开
公开(公告)号：US20170253990A1
公开(公告)日：2017-09-07
申请号：US15510941
申请日：2015-09-09
申请人： AMMONO S.A. W UPADLOSCI LIKWIDACYJNEJ
发明人： Robert KUCHARSKI , Marcin ZAJAC , Dorota GRZYBOWSKA , Weronika KOROLCZUK
IPC分类号： C30B7/10 , C30B29/40 , C01B21/06 , C30B7/14
CPC分类号： C30B7/105 , C01B21/0632 , C01P2002/52 , C01P2006/40 , C30B7/14 , C30B29/406 , Y02P20/544
摘要： The present invention relates to a method for producing monocrystalline gallium containing nitride from a source material containing gallium in the environment of supercritical ammonia solvent with the addition of a mineralizer containing the element of Group I (IUPAC, 1989), wherein in an autoclave two temperature zones are generated, i.e. a dissolution zone with lower temperature containing the source material, and a crystallization zone located below it with higher temperature, containing at least one seed. At least two further components are introduced into the process environment, namely an oxygen getter in molar ratio to ammonia ranging from 0.0001 to 0.2, and an acceptor dopant in molar ratio to ammonia not higher than 0.1, said acceptor dopant being manganese, iron, vanadium or carbon, or a combination thereof. The invention also relates to a monocrystalline gallium containing nitride prepared by this method.

5. 发明申请

US20160108547A1 METHOD FOR OBTAINING MONOCRYSTALLINE GALLIUM-CONTAINING NITRIDE AND MONOCRYSTALLINE GALLIUM-CONTAINING NITRIDE OBTAINED BY THIS METHOD 审中-公开
标题翻译：用于获得单晶含氮氮化物和通过该方法获得的单晶含氮氮化物的方法
公开(公告)号：US20160108547A1
公开(公告)日：2016-04-21
申请号：US14894337
申请日：2014-03-24
申请人： AMMONO S.A.
发明人： Roman DORADZINSKI , Marcin ZAJAC , Robert KUCHARSKI
IPC分类号： C30B7/10 , H01B1/02 , C30B29/40
CPC分类号： C30B7/105 , C30B29/406 , H01B1/02
摘要： The object of the invention is a method for obtaining monocrystalline gallium-containing nitride, from gallium-containing feedstock in the environment of supercritical ammonia-containing solvent with the addition of a mineraliser, containing an element of Group I (IUPAC, 1989), wherein, in an autoclave, two temperature zones are generated, i.e. a dissolution zone of lower temperature, containing feedstock, and, below it, a crystallisation zone of higher temperature, containing at least one seed, a dissolution process of the feedstock and a crystallisation process of the gallium-containing nitride on the at least one seed are carried out, characterised in that at least two additional components are introduced into the process environment, namely: a) an oxygen getter in a molar ratio to ammonia ranging from 0.0001 to 0.2, b) an acceptor dopant in a molar ratio to ammonia not higher than 0.001. The invention also includes monocrystalline gallium-containing nitride, obtained by this method.
摘要翻译：本发明的目的是一种在含超临界含氨的溶剂的环境中从含镓原料中加入含有I族元素的矿化剂（IUPAC，1989）获得单晶含镓氮化物的方法，其中在高压釜中，产生两个温度区，即较低温度的溶解区，含有原料，在其下方，含有较高温度的结晶区，含有至少一个种子，原料的溶解过程和结晶过程的至少一种种子上的含镓氮化物进行，其特征在于，至少两种另外的组分被引入到工艺环境中，即：a）与氨的摩尔比为0.0001至0.2的氧气吸气剂， b）与氨的摩尔比不高于0.001的受主掺杂剂。本发明还包括通过该方法获得的单晶含镓氮化物。

6. 发明申请

WO2014191126A1 METHOD FOR OBTAINING MONOCRYSTALLINE GALLIUM-CONTAINING NITRIDE AND MONOCRYSTALLINE GALLIUM-CONTAINING NITRIDE OBTAINED BY THIS METHOD 审中-公开
标题翻译：用于获得单晶含氮氮化物和通过该方法获得的单晶含氮氮化物的方法
公开(公告)号：WO2014191126A1
公开(公告)日：2014-12-04
申请号：PCT/EP2014/055876
申请日：2014-03-24
申请人： AMMONO S.A.
发明人： DORADZINSKI, Roman , ZAJAC, Marcin , KUCHARSKI, Robert
IPC分类号： C30B7/10 , C30B29/40
CPC分类号： C30B7/105 , C30B29/406 , H01B1/02
摘要： The object of the invention is a method for obtaining monocrystalline gallium-containing nitride, from gallium-containing feedstock in the environment of supercritical ammonia-containing solvent with the addition of a mineraliser, containing an element of Group I (IUPAC, 1989), wherein, in an autoclave, two temperature zones are generated, i.e. a dissolution zone of lower temperature, containing feedstock, and, below it, a crystallisation zone of higher temperature, containing at least one seed, a dissolution process of the feedstock and a crystallisation process of the gallium-containing nitride on the at least one seed are carried out, characterised in that at least two additional components are introduced into the process environment, namely: a)an oxygen getter in a molar ratio to ammonia ranging from 0.0001 to 0.2, b)an acceptor dopant in a molar ratio to ammonia not higher than 0.001. The invention also includes monocrystalline gallium-containing nitride, obtained by this method. (20 claims)
摘要翻译：本发明的目的是一种在含超临界含氨的溶剂的环境中从含镓原料中加入含有I族元素的矿化剂（IUPAC，1989）获得单晶含镓氮化物的方法，其中在高压釜中，产生两个温度区，即较低温度的溶解区，含有原料，在其下方，含有较高温度的结晶区，含有至少一种种子，原料的溶解过程和结晶过程的至少一种种子上的含镓氮化物进行，其特征在于，至少两种另外的组分被引入到工艺环境中，即：a）与氨的摩尔比为0.0001至0.2的氧气吸气剂， b）与氨的摩尔比不高于0.001的受主掺杂剂。本发明还包括通过该方法获得的单晶含镓氮化物。（20个索赔）

7. 发明申请

WO2016038099A1 A METHOD FOR PRODUCING MONOCRYSTALLINE GALLIUM CONTAINING NITRIDE AND MONOCRYSTALLINE GALLIUM CONTAINING NITRIDE, PREPARED WITH THIS METHOD 审中-公开
标题翻译：制备含有氮化物的单晶硅酸盐和含有氮化物的单晶硅酸盐的方法
公开(公告)号：WO2016038099A1
公开(公告)日：2016-03-17
申请号：PCT/EP2015/070633
申请日：2015-09-09
申请人： AMMONO S.A. W UPADLOSCI LIKWIDACYJNEJ
发明人： KUCHARSKI, Robert , ZAJAC, Marcin , GRZYBOWSKA, Dorota , KOROLCZUK, Weronika
IPC分类号： C30B7/10 , C30B29/40
CPC分类号： C30B7/105 , C01B21/0632 , C01P2002/52 , C01P2006/40 , C30B7/14 , C30B29/406 , Y02P20/544
摘要： The subject of the invention is the method for producing monocrystalline gallium containing nitride from a source material containing gallium in the environment of supercritical ammonia solvent with the addition of a mineralizer containing the element of Group I (IUPAC, 1989), wherein in an autoclave two temperature zones are generated, i.e. the dissolution zone with lower temperature containing the source material, and the crystallization zone located below it with higher temperature, containing at least one seed, the dissolution process of the source material and crystallization of gallium containing nitride on at least one seed is carried out, wherein at least two further components are introduced into the process environment, namely: • c) the oxygen getter in the molar ratio to ammonia of from 0.0001 to 0.2; • d) the acceptor dopants in the mole ratio to ammonia of not more than 0.1; characterized in that the acceptor dopant constitutes manganese, iron, vanadium or carbon, or a combination thereof. The invention comprises also monocrystalline gallium containing nitride, prepared with this method.
摘要翻译：本发明的主题是在超临界氨溶剂的环境中从含有镓的源材料中加入含有I族元素的矿化剂（IUPAC，1989）制备含镓氮化镓的方法，其中在高压釜2 产生温度区，即含有源材料的较低温度的溶解区，并且位于其下方的结晶区具有更高的温度，含有至少一种种子，源材料的溶解过程和至少含有氮化镓的结晶一个种子进行，其中至少两个其它组分被引入过程环境中，即：c）与氨的摩尔比为0.0001至0.2的氧气吸气剂; •d）与氨的摩尔比的受主掺杂剂不大于0.1; 其特征在于，受体掺杂剂构成锰，铁，钒或碳，或其组合。本发明还包括用该方法制备的单晶含镓氮化物。

8. 发明授权

EP1590509B1 PROCESS FOR OBTAINING BULK MONOCRYSTALLINE GALLIUM-CONTAINING NITRIDE 有权转让
标题翻译：用于生产固体单结晶从含氮化镓
公开(公告)号：EP1590509B1
公开(公告)日：2014-02-12
申请号：EP03778841.1
申请日：2003-12-11
申请人： Ammono S.A. , Nichia Corporation
发明人： DWILINSKI, Robert , DORADZINSKI, Roman , GARCZYNSKI, Jerzy , SIERZPUTOWSKI, Leszek , KANBARA, Yasuo, NICHIA CORPORATION
IPC分类号： C30B7/00 , C30B29/40
CPC分类号： C30B29/403 , C30B7/00 , C30B7/005 , C30B29/406

9. 发明授权

EP1859477B1 NITRIDE SINGLE CRYSTAL SEEDED GROWTH IN SUPERCRITICAL AMMONIA WITH ALKALI METAL IONS 有权转让
公开(公告)号：EP1859477B1
公开(公告)日：2019-03-20
申请号：EP05814406.4
申请日：2005-11-28
申请人： Ammono S.A. , Nichia Corporation
发明人： DWILINSKI, Robert , DORADZINSKI, Roman , GARCZYNSKI, Jerzy , SIERZPUTOWSKI, Leszek , KANBARA, Yasuo NICHIA CORPORATION
IPC分类号： H01L21/18 , C30B9/00 , C30B29/40 , B82Y20/00 , C30B7/00 , C30B7/10 , H01S5/22 , H01S5/223 , H01S5/343

10. 发明授权

EP1514958B1 APPARATUS FOR OBTAINING A BULK SINGLE CRYSTAL USING SUPERCRITICAL AMMONIA 有权
标题翻译：器具，用于产生批量单一使用超临界氨
公开(公告)号：EP1514958B1
公开(公告)日：2014-05-14
申请号：EP02788783.5
申请日：2002-12-11
申请人： Ammono S.A. , Nichia Corporation
发明人： DWILINSKI, Robert , DORADZINSKI, Roman , GARCZYNSKI, Jerzy , SIERZPUTOWSKI, Leszek , KANBARA, Yasuo, NICHIA CORPORATION
IPC分类号： C30B29/40 , C30B7/08 , C30B7/10
CPC分类号： C30B7/10 , C30B7/00 , C30B7/08 , C30B29/406 , Y10T117/10 , Y10T117/102 , Y10T117/1024

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