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    • 3. 发明申请
    • METHOD AND APPARATUS FOR CONTINUOUS CONTROLLED PRODUCTION OF SINGLE CRYSTAL WHISKERS
    • 连续控制生产单晶玻璃的方法和装置
    • WO1990008732A1
    • 1990-08-09
    • PCT/US1990000546
    • 1990-01-30
    • MILEWSKI, John, V.
    • C01B21/064
    • C30B25/005C30B29/36C30B29/38C30B29/403Y10T117/102
    • Described herein is a method and apparatus for continuously growing single crystal whiskers (11) of silicon carbide, silicon nitride, boron carbide and boron nitride by the VLS process under controlled reaction conditions. A growth substrate such as a plate (2) of solid graphite is coated with a suitable VLS catalyst (4) and is conveyed through a tubular furnace (5), into which are separately introduced two feed gases (6, 15). The first feed gas (6) contains a cationic suboxide precursor such as silicon monoxide or boron monoxide. The second feed gas (15) contains an anionic precursor compound such as methane or ammonia. The precursor compounds react upon exposure to the catalyst by the VLS process to produce crystalline whiskers. The associated apparatus includes a conveyor assembly (1) that continuously circulates multiple substrate growth plates (2) through the furnace and past a harvesting device (12) which brushes the whiskers (11) from the plates and removes them by vacuum collection (13). Whiskers of uniform size, shape, and purity are produced.
    • 本文描述了一种用于在受控反应条件下通过VLS工艺连续生长碳化硅,氮化硅,碳化硼和氮化硼的单晶晶须(11)的方法和装置。 生长衬底例如固体石墨板(2)用合适的VLS催化剂(4)涂覆,并通过管式炉(5)输送,其中分别引入两种进料气体(6,15)。 第一进料气体(6)含有阳离子低氧化物前体,例如一氧化硅或一氧化硼。 第二进料气体(15)含有阴离子前体化合物如甲烷或氨。 前体化合物通过VLS工艺暴露于催化剂时产生晶体晶须。 相关联的设备包括输送机组件(1),其将多个基板生长板(2)连续循环通过炉并经过从板上刷出晶须(11)并通过真空收集(13)去除它们的收获装置(12) 。 产生均匀尺寸,形状和纯度的晶须。