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1. 发明申请

WO2007127657A2 INCREASED POLYSILICON DEPOSITION IN A CVD REACTOR 审中-公开
标题翻译：在CVD反应器中增加多晶硅沉积
公开(公告)号：WO2007127657A2
公开(公告)日：2007-11-08
申请号：PCT/US2007066923
申请日：2007-04-19
申请人： GT SOLAR INC , WAN YUEPENG , PARTHASARATHY SANTHANA RAGHAVA , CHARTIER CARL , SERVINI ADRIAN , KHATTAK CHANDRA P
发明人： WAN YUEPENG , PARTHASARATHY SANTHANA RAGHAVA , CHARTIER CARL , SERVINI ADRIAN , KHATTAK CHANDRA P
IPC分类号： C23C16/00
CPC分类号： C23C16/24 , C01B33/035 , C23C16/4418 , C23C16/458 , Y10T117/10 , Y10T117/102 , Y10T117/1024 , Y10T117/1032 , Y10T117/104
摘要： A method and process for the production of bulk polysilicon by chemical vapor deposition (CVD) where conventional silicon "slim rods" commonly used in Siemens-type reactors are replaced with shaped silicon filaments of similar electrical properties but larger surface areas, such as silicon tubes, ribbons, and other shaped cross sections. Silicon containing gases, such as chlorosilane or silane, are decomposed and form a silicon deposit on the hot surfaces of the filaments The larger starting surface areas of these filaments ensures a higher production rate without changing the reactor size, and without increasing the number and length of the filaments. Existing reactors need only the adaptation or replacement of filament supports to use the new filaments. The filaments are grown from silicon melt by Edge-defined, Film-fed Growth (EFG) method. This also enables the doping of the filaments and simplification of power supplies for new reactors.
摘要翻译：通过化学气相沉积（CVD）生产大块多晶硅的方法和方法，其中西门子型反应器中通常使用的常规硅“细棒”被具有类似电性能但较大表面积的成形硅丝替代，例如硅管，丝带和其他形状的横截面。诸如氯硅烷或硅烷的含硅气体被分解并在长丝的热表面上形成硅沉积物。这些长丝的较大的起始表面积确保了更高的生产速率，而不改变反应器尺寸，并且不增加数量和长度的长丝。现有的反应器仅需要适应或替换长丝支撑来使用新的长丝。通过边缘定义的薄膜进料生长（EFG）法从硅熔体生长长丝。这也使得可以掺杂长丝并简化新型反应器的电源。

2. 发明专利

NO20084722A 未知
公开(公告)号：NO20084722A
公开(公告)日：2008-11-10
申请号：NO20084722
申请日：2008-11-10
申请人： GT SOLAR INC
发明人： WAN YUEPENG , PARTHASARATHY SANTHANA RAGHAVAN , CHARTIER CARL , SERVINI ADRIAN , KHATTAK CHANDRA P
IPC分类号： C23C16/24 , C23C16/458
CPC分类号： C23C16/24 , C01B33/035 , C23C16/4418 , C23C16/458 , Y10T117/10 , Y10T117/102 , Y10T117/1024 , Y10T117/1032 , Y10T117/104
摘要： A method and process for the production of bulk polysilicon by chemical vapor deposition (CVD) where conventional silicon "slim rods" commonly used in Siemens-type reactors are replaced with shaped silicon filaments of similar electrical properties but larger surface areas, such as silicon tubes, ribbons, and other shaped cross sections. Silicon containing gases, such as chlorosilane or silane, are decomposed and form a silicon deposit on the hot surfaces of the filaments The larger starting surface areas of these filaments ensures a higher production rate without changing the reactor size, and without increasing the number and length of the filaments. Existing reactors need only the adaptation or replacement of filament supports to use the new filaments. The filaments are grown from silicon melt by Edge-defined, Film-fed Growth (EFG) method. This also enables the doping of the filaments and simplification of power supplies for new reactors.

3. 发明专利

CA2650722A1 INCREASED POLYSILICON DEPOSITION IN A CVD REACTOR 未知
公开(公告)号：CA2650722A1
公开(公告)日：2007-11-08
申请号：CA2650722
申请日：2007-04-19
申请人： GT SOLAR INC
发明人： SERVINI ADRIAN , KHATTAK CHANDRA P , CHARTIER CARL , WAN YUEPENG , PARTHASARATHY SANTHANA RAGHAVAN
IPC分类号： C23C16/00 , C23C16/46

4. 发明专利

NO20084722L 未知
公开(公告)号：NO20084722L
公开(公告)日：2008-11-10
申请号：NO20084722
申请日：2008-11-10
申请人： GT SOLAR INC
发明人： WAN YUEPENG , PARTHASARATHY SANTHANA RAGHAVAN , CHARTIER CARL , SERVINI ADRIAN , KHATTAK CHANDRA P
IPC分类号： C23C16/24 , C23C16/458

5. 发明公开

EP2013376A4 INCREASED POLYSILICON DEPOSITION IN A CVD REACTOR 有权
标题翻译： ERHÖHTEPOLYSILIZIUMABSCHEIDUNG IN EINEM CVD-REAKTOR
公开(公告)号：EP2013376A4
公开(公告)日：2010-03-24
申请号：EP07760879
申请日：2007-04-19
申请人： GT SOLAR INC
发明人： WAN YUEPENG , PARTHASARATHY SANTHANA RAGHAVAN , CHARTIER CARL , SERVINI ADRIAN , KHATTAK CHANDRA P
IPC分类号： C23C16/00 , C23C16/46
CPC分类号： C23C16/24 , C01B33/035 , C23C16/4418 , C23C16/458 , Y10T117/10 , Y10T117/102 , Y10T117/1024 , Y10T117/1032 , Y10T117/104
摘要： A method and process for the production of bulk polysilicon by chemical vapor deposition (CVD) where conventional silicon "slim rods" commonly used in Siemens-type reactors are replaced with shaped silicon filaments of similar electrical properties but larger surface areas, such as silicon tubes, ribbons, and other shaped cross sections. Silicon containing gases, such as chlorosilane or silane, are decomposed and form a silicon deposit on the hot surfaces of the filaments The larger starting surface areas of these filaments ensures a higher production rate without changing the reactor size, and without increasing the number and length of the filaments. Existing reactors need only the adaptation or replacement of filament supports to use the new filaments. The filaments are grown from silicon melt by Edge-defined, Film-fed Growth (EFG) method. This also enables the doping of the filaments and simplification of power supplies for new reactors.
摘要翻译：通过化学气相沉积（CVD）生产大块多晶硅的方法和方法，其中西门子型反应器中通常使用的常规硅“细棒”被具有类似电性能但较大表面积的成形硅丝替代，例如硅管，丝带和其他形状的横截面。诸如氯硅烷或硅烷的含硅气体被分解并在长丝的热表面上形成硅沉积物这些长丝的较大的起始表面积确保了更高的生产速率，而不改变反应器尺寸，并且不增加数量和长度的长丝。现有的反应器仅需要适应或替换长丝支撑来使用新的长丝。通过边缘定义的薄膜进料生长（EFG）法从硅熔体生长长丝。这也使得可以掺杂长丝并简化新型反应器的电源。

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