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1. 发明申请

WO2007127657A2 INCREASED POLYSILICON DEPOSITION IN A CVD REACTOR 审中-公开
标题翻译：在CVD反应器中增加多晶硅沉积
公开(公告)号：WO2007127657A2
公开(公告)日：2007-11-08
申请号：PCT/US2007066923
申请日：2007-04-19
申请人： GT SOLAR INC , WAN YUEPENG , PARTHASARATHY SANTHANA RAGHAVA , CHARTIER CARL , SERVINI ADRIAN , KHATTAK CHANDRA P
发明人： WAN YUEPENG , PARTHASARATHY SANTHANA RAGHAVA , CHARTIER CARL , SERVINI ADRIAN , KHATTAK CHANDRA P
IPC分类号： C23C16/00
CPC分类号： C23C16/24 , C01B33/035 , C23C16/4418 , C23C16/458 , Y10T117/10 , Y10T117/102 , Y10T117/1024 , Y10T117/1032 , Y10T117/104
摘要： A method and process for the production of bulk polysilicon by chemical vapor deposition (CVD) where conventional silicon "slim rods" commonly used in Siemens-type reactors are replaced with shaped silicon filaments of similar electrical properties but larger surface areas, such as silicon tubes, ribbons, and other shaped cross sections. Silicon containing gases, such as chlorosilane or silane, are decomposed and form a silicon deposit on the hot surfaces of the filaments The larger starting surface areas of these filaments ensures a higher production rate without changing the reactor size, and without increasing the number and length of the filaments. Existing reactors need only the adaptation or replacement of filament supports to use the new filaments. The filaments are grown from silicon melt by Edge-defined, Film-fed Growth (EFG) method. This also enables the doping of the filaments and simplification of power supplies for new reactors.
摘要翻译：通过化学气相沉积（CVD）生产大块多晶硅的方法和方法，其中西门子型反应器中通常使用的常规硅“细棒”被具有类似电性能但较大表面积的成形硅丝替代，例如硅管，丝带和其他形状的横截面。诸如氯硅烷或硅烷的含硅气体被分解并在长丝的热表面上形成硅沉积物。这些长丝的较大的起始表面积确保了更高的生产速率，而不改变反应器尺寸，并且不增加数量和长度的长丝。现有的反应器仅需要适应或替换长丝支撑来使用新的长丝。通过边缘定义的薄膜进料生长（EFG）法从硅熔体生长长丝。这也使得可以掺杂长丝并简化新型反应器的电源。

2. 发明申请

WO2006107769A2 SOLIDIFICATION OF CRYSTALLINE SILICON FROM REUSABLE CRUCIBLE MOLDS 审中-公开
标题翻译：从可重复使用的溶胶中固结晶体硅
公开(公告)号：WO2006107769A2
公开(公告)日：2006-10-12
申请号：PCT/US2006012017
申请日：2006-03-31
申请人： G T EQUIPMENT TECHNOLOGIES INC , PARTHASARATHY SANTHANA RAGHAVA , WAN YUEPENG , CHARTIER CARL , TALBOTT JONATHAN A , GUPTA KEDAR P
发明人： PARTHASARATHY SANTHANA RAGHAVA , WAN YUEPENG , CHARTIER CARL , TALBOTT JONATHAN A , GUPTA KEDAR P
IPC分类号： C30B35/00 , C30B15/00 , C30B21/06 , C30B27/02 , C30B28/10 , C30B30/04
CPC分类号： C30B11/002 , Y10T117/1032 , Y10T428/2495
摘要： A process for making silicon ingots using a multi-part, reusable, graphite crucible of at least two mold pieces configured for assembly into an open top mold having an interior surface functional as a mold cavity for receiving molten silicon; removing or reducing a prior applied release coating from the interior surface until a uniformly smooth finish is achieved; coating the interior surface with a first layer of release coating comprising silicon nitride; coating the interior surface with a second layer of release coat comprising silica suspended in water; coating the interior surface with a third layer of release coat comprising silicon nitride; curing the release coat on said crucible; casting a silicon ingot in the crucible; and then repeating the prior steps multiple times.
摘要翻译：一种制造硅锭的方法，该方法使用至少两个模具件的多部分可重复使用的石墨坩埚，其被构造成用于组装到具有用作接收熔融硅的模具腔的内表面的开放顶模中; 从内表面去除或减少先前施加的剥离涂层，直到达到均匀光滑的光洁度; 用包含氮化硅的第一层脱模涂层涂覆内表面; 用包含悬浮在水中的二氧化硅的第二层脱模涂层涂覆内表面; 用包含氮化硅的第三层剥离涂层涂覆内表面; 固化所述坩埚上的脱模涂层; 在坩埚中铸造硅锭; 然后重复前面的步骤多次。

3. 发明申请

WO2010008477A3 CHUCK AND BRIDGE CONNECTION POINTS FOR TUBE FILAMENTS IN A CHEMICAL VAPOR DEPOSITION REACTOR 审中-公开
标题翻译：用于化学气相沉积反应器中的管状电缆的桥接和桥接连接点
公开(公告)号：WO2010008477A3
公开(公告)日：2010-06-03
申请号：PCT/US2009003763
申请日：2009-06-23
申请人： GT SOLAR INC , GUM JEFFREY C , BALLENGER KEITH , CHARTIER CARL , SCHWEYEN ANDY
发明人： GUM JEFFREY C , BALLENGER KEITH , CHARTIER CARL , SCHWEYEN ANDY
IPC分类号： C23C16/24 , C01B33/035 , C23C16/46
CPC分类号： C23C16/24 , C01B33/035 , C23C16/46 , Y10T29/49885
摘要： A chemical vapor deposition reactor system includes one or more tube filaments connected to a bridge, each tube filament being connected to a chuck. The chuck-to-filament connection can include a seed formed on an end of the tube filament, the seed being connected to a protrusion of the chuck, or the filament may be formed directly onto the chuck. For the bridge-to-filament connection, a flat cross bridge or a rectangular bridge is connected with corresponding openings in the filament. Use of these connections can maintain electrical connectivity and thus resistive heating of the tube filaments during operation of the reactor system.
摘要翻译：化学气相沉积反应器系统包括连接到桥的一个或多个管细丝，每个管细丝连接到卡盘。卡盘对丝线连接可以包括形成在管细丝的端部上的种子，种子连接到卡盘的突起，或者丝可以直接形成在卡盘上。对于桥到丝连接，扁平的交叉桥或矩形桥与灯丝中的相应开口连接。使用这些连接可以保持电连接性，从而在反应器系统的运行期间保持管丝的电阻加热。

4. 发明专利

NO20084722A 未知
公开(公告)号：NO20084722A
公开(公告)日：2008-11-10
申请号：NO20084722
申请日：2008-11-10
申请人： GT SOLAR INC
发明人： WAN YUEPENG , PARTHASARATHY SANTHANA RAGHAVAN , CHARTIER CARL , SERVINI ADRIAN , KHATTAK CHANDRA P
IPC分类号： C23C16/24 , C23C16/458
CPC分类号： C23C16/24 , C01B33/035 , C23C16/4418 , C23C16/458 , Y10T117/10 , Y10T117/102 , Y10T117/1024 , Y10T117/1032 , Y10T117/104
摘要： A method and process for the production of bulk polysilicon by chemical vapor deposition (CVD) where conventional silicon "slim rods" commonly used in Siemens-type reactors are replaced with shaped silicon filaments of similar electrical properties but larger surface areas, such as silicon tubes, ribbons, and other shaped cross sections. Silicon containing gases, such as chlorosilane or silane, are decomposed and form a silicon deposit on the hot surfaces of the filaments The larger starting surface areas of these filaments ensures a higher production rate without changing the reactor size, and without increasing the number and length of the filaments. Existing reactors need only the adaptation or replacement of filament supports to use the new filaments. The filaments are grown from silicon melt by Edge-defined, Film-fed Growth (EFG) method. This also enables the doping of the filaments and simplification of power supplies for new reactors.

5. 发明专利

CA2650722A1 INCREASED POLYSILICON DEPOSITION IN A CVD REACTOR 未知
公开(公告)号：CA2650722A1
公开(公告)日：2007-11-08
申请号：CA2650722
申请日：2007-04-19
申请人： GT SOLAR INC
发明人： SERVINI ADRIAN , KHATTAK CHANDRA P , CHARTIER CARL , WAN YUEPENG , PARTHASARATHY SANTHANA RAGHAVAN
IPC分类号： C23C16/00 , C23C16/46

6. 发明专利

NO20084722L 未知
公开(公告)号：NO20084722L
公开(公告)日：2008-11-10
申请号：NO20084722
申请日：2008-11-10
申请人： GT SOLAR INC
发明人： WAN YUEPENG , PARTHASARATHY SANTHANA RAGHAVAN , CHARTIER CARL , SERVINI ADRIAN , KHATTAK CHANDRA P
IPC分类号： C23C16/24 , C23C16/458

7. 发明公开

EP2013376A4 INCREASED POLYSILICON DEPOSITION IN A CVD REACTOR 有权
标题翻译： ERHÖHTEPOLYSILIZIUMABSCHEIDUNG IN EINEM CVD-REAKTOR
公开(公告)号：EP2013376A4
公开(公告)日：2010-03-24
申请号：EP07760879
申请日：2007-04-19
申请人： GT SOLAR INC
发明人： WAN YUEPENG , PARTHASARATHY SANTHANA RAGHAVAN , CHARTIER CARL , SERVINI ADRIAN , KHATTAK CHANDRA P
IPC分类号： C23C16/00 , C23C16/46
CPC分类号： C23C16/24 , C01B33/035 , C23C16/4418 , C23C16/458 , Y10T117/10 , Y10T117/102 , Y10T117/1024 , Y10T117/1032 , Y10T117/104
摘要： A method and process for the production of bulk polysilicon by chemical vapor deposition (CVD) where conventional silicon "slim rods" commonly used in Siemens-type reactors are replaced with shaped silicon filaments of similar electrical properties but larger surface areas, such as silicon tubes, ribbons, and other shaped cross sections. Silicon containing gases, such as chlorosilane or silane, are decomposed and form a silicon deposit on the hot surfaces of the filaments The larger starting surface areas of these filaments ensures a higher production rate without changing the reactor size, and without increasing the number and length of the filaments. Existing reactors need only the adaptation or replacement of filament supports to use the new filaments. The filaments are grown from silicon melt by Edge-defined, Film-fed Growth (EFG) method. This also enables the doping of the filaments and simplification of power supplies for new reactors.
摘要翻译：通过化学气相沉积（CVD）生产大块多晶硅的方法和方法，其中西门子型反应器中通常使用的常规硅“细棒”被具有类似电性能但较大表面积的成形硅丝替代，例如硅管，丝带和其他形状的横截面。诸如氯硅烷或硅烷的含硅气体被分解并在长丝的热表面上形成硅沉积物这些长丝的较大的起始表面积确保了更高的生产速率，而不改变反应器尺寸，并且不增加数量和长度的长丝。现有的反应器仅需要适应或替换长丝支撑来使用新的长丝。通过边缘定义的薄膜进料生长（EFG）法从硅熔体生长长丝。这也使得可以掺杂长丝并简化新型反应器的电源。

8. 发明申请

WO2012151155A3 APPARATUS AND METHOD FOR PRODUCING A MULTICRYSTALLINE MATERIAL HAVING LARGE GRAIN SIZES 审中-公开
标题翻译：用于生产具有大颗粒尺寸的多晶材料的装置和方法
公开(公告)号：WO2012151155A3
公开(公告)日：2013-03-21
申请号：PCT/US2012035803
申请日：2012-04-30
申请人： GTAT CORPORTION , RAVI BHUVARAGASAMY GANESAN , PARTHSARATHY SANTHANA RAGHAVAN , LACKEY DAVID , ANDRUKHIV ANDRE , LYTTLE DAVID , BATHEY BALA , CHARTIER CARL
发明人： RAVI BHUVARAGASAMY GANESAN , PARTHSARATHY SANTHANA RAGHAVAN , LACKEY DAVID , ANDRUKHIV ANDRE , LYTTLE DAVID , BATHEY BALA , CHARTIER CARL
IPC分类号： C30B11/00 , C30B29/06 , C30B35/00
CPC分类号： C30B11/002 , C30B11/003 , C30B29/06
摘要： A crystal growth apparatus is disclosed comprising a crucible, optionally contained within a crucible box, on a crucible support block, wherein the bottom of the crucible, the bottom plate of the crucible box, if used, and/or the crucible support block comprise at least one cavity configured to circulate at least one coolant therein. Also disclosed is a method of preparing a crystalline material using the disclosed crystal growth apparatus as well as the resulting crystalline material, having larger overall grain sizes.
摘要翻译：公开了一种晶体生长装置，其包括可选地包含在坩埚盒内的坩埚，坩埚支撑块，其中坩埚的底部，坩埚盒的底板（如果使用）和/或坩埚支撑块包括在至少一个空腔被配置成在其中循环至少一个冷却剂。还公开了使用所公开的晶体生长装置以及所得结晶材料制备具有较大总体晶粒尺寸的结晶材料的方法。

9. 发明申请

WO2012170124A3 HEATER ASSEMBLY FOR CRYSTAL GROWTH APPARATUS 审中-公开
标题翻译：用于晶体生长装置的加热器组件
公开(公告)号：WO2012170124A3
公开(公告)日：2013-05-02
申请号：PCT/US2012035970
申请日：2012-05-01
申请人： GTAT CORP , CHARTIER CARL , RAGHAVAN PARTHASARATHY SANTHANA , ANDRUKHIV ANDRE , LACKEY DAVE , RAVI BHUVARAGASAMY G
发明人： CHARTIER CARL , RAGHAVAN PARTHASARATHY SANTHANA , ANDRUKHIV ANDRE , LACKEY DAVE , RAVI BHUVARAGASAMY G
IPC分类号： C30B11/00 , C30B29/06 , C30B35/00
CPC分类号： C30B11/003 , C30B15/14 , F27B14/14 , F27D11/02 , F27D99/0006
摘要： Systems and methods are provided to promote uniform thermal environment to feedstock material (e.g., silicon) in a crucible of a crystal growth apparatus are provided herein. More specifically, a heating system may be arranged in the crystal growth apparatus so as to include at least a first and second heating element which are configured to distribute heat axisymmetrically to the feedstock material and the second heating element that is configured to distribute heat symmetrically to the feedstock material to thereby provide uniform heat distribution to the feedstock material in the crucible to allow for increased consistency in crystal ingot quality.
摘要翻译：本文提供的系统和方法用于促进在晶体生长装置的坩埚中的原料（例如硅）的均匀热环境。更具体地说，加热系统可以布置在晶体生长装置中，以便至少包括第一和第二加热元件，第一和第二加热元件构造成将热轴对称地分布到原料和第二加热元件，第二加热元件被配置为对称地分配到原料材料，从而为坩埚中的原料提供均匀的热分布，以提高晶锭质量的一致性。

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