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    • 51. 发明授权
    • Programmable latch device with integrated programmable element
    • 具有集成可编程元件的可编程锁存器件
    • US06420925B1
    • 2002-07-16
    • US09757267
    • 2001-01-09
    • John A. FifieldErik L. HedbergClaude L. BertinNicholas M. van Heel
    • John A. FifieldErik L. HedbergClaude L. BertinNicholas M. van Heel
    • H01H3776
    • H03K3/356008G11C17/18
    • According to the present invention, a programable latch device for use in personalizing a semiconductor device is provided that overcomes the limitations of the prior art. The preferred embodiment programmable latch device can use both fuses and antifuses as programmable elements. The programmable latch device provides a solid digital output indicative of the state of the programmable device, and can be reliably read to provide customization and personalization of associated semiconductor devices. The preferred embodiment programable latch device includes an integrated fuse or antifuse as a programmable element in the latch device. By integrating the programmable element into the latch, device size and complexity is minimized. In particular, the number of transistors required drops considerably when compared to prior art approaches.
    • 根据本发明,提供了用于个性化半导体器件的可编程锁存器件,其克服了现有技术的限制。 优选实施例可编程锁存器件可以使用熔丝和反熔丝作为可编程元件。 可编程锁存器件提供指示可编程器件状态的实心数字输出,并且可被可靠地读取以提供相关半导体器件的定制和个性化。 优选实施例可编程锁存装置包括作为锁存装置中的可编程元件的集成熔丝或反熔丝。 通过将可编程元件集成到锁存器中,器件尺寸和复杂度最小化。 特别地,与现有技术方法相比,所需的晶体管的数量显着下降。
    • 52. 发明授权
    • Programmable delay element and synchronous DRAM using the same
    • 可编程延迟元件和同步DRAM
    • US06400202B1
    • 2002-06-04
    • US09988846
    • 2001-11-19
    • John A. FifieldNicholas M. van HeelMark D. JacunskiDavid E. ChapmanDavid E. Douse
    • John A. FifieldNicholas M. van HeelMark D. JacunskiDavid E. ChapmanDavid E. Douse
    • G06F104
    • G11C7/222G11C7/04G11C7/1072H03K5/133H03K2005/00065
    • A programmable delay element includes a current source field-effect transistor (FET), a switch device, a precharge device, and an inverter device. The current source FET gates a programmable, predetermined amount of current. The switch device, which is coupled to the current source PET, receives an input signal having a first and second voltage level. The precharge device precharges the node coupled to the drain of the current source FET when the input signal is at a second voltage level. The inverter device, which is also coupled to the drain of the current source FET, outputs a delayed signal when the input signal is at a first voltage level, the delay of the delayed signal defined by the programmable, predetermined amount of current. The inverter device generates an inverter switch point that is substantially independent of parametric sensitivities, such as temperature variations. Also, the relative placement of the current source FET to the switch device of the present invention allows the programmable delay element to quickly reach a linear and predictable state of operation.
    • 可编程延迟元件包括电流源场效应晶体管(FET),开关器件,预充电器件和逆变器器件。 电流源FET栅极可编程,预定量的电流。 耦合到电流源PET的开关装置接收具有第一和第二电压电平的输入信号。 当输入信号处于第二电压电平时,预充电装置对耦合到电流源FET的漏极的节点进行预充电。 还耦合到电流源FET的漏极的逆变器装置在输入信号处于第一电压电平时输出延迟信号,延迟信号由可编程预定量的电流定义。 逆变器装置产生基本上与参数灵敏度(例如温度变化)无关的逆变器开关点。 此外,电流源FET相对于本发明的开关器件的放置允许可编程延迟元件快速达到线性和可预测的操作状态。