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51. 发明申请

US20060238954A1 Electrostatic chuck for track thermal plates 审中-公开
标题翻译：轨道热板用静电吸盘
公开(公告)号：US20060238954A1
公开(公告)日：2006-10-26
申请号：US11153974
申请日：2005-06-15
申请人： Tetsuya Ishikawa , Brian Lue
发明人： Tetsuya Ishikawa , Brian Lue
IPC分类号： H01H1/00
CPC分类号： H02N13/00 , H01L21/67103 , H01L21/6831
摘要： A chuck for a semiconductor workpiece features integrated resistive heating and electrostatic bipolar chucking elements on a thermal pedestal. These integrated heating and chucking elements maintain wafer flatness, as well as uniformity of an underlying gap accommodating a thermal gas between the workpiece and the chuck. In accordance with one embodiment of the present invention, a laminated Kapton wafer heater is attached to the top of the thermal surface, under the wafer: At least two electrical voltage zones are isolated within the heater, in order to create a chucking force between the chuck and the wafer without having to contact the wafer with an electrical conductor. These voltage zones can be created by using separate conducting elements as well as by imposing a DC bias on zones including the resistive heating elements.
摘要翻译：用于半导体工件的卡盘在热基座上具有集成的电阻加热和静电双极夹紧元件。这些集成的加热和夹紧元件保持晶圆平坦度，以及在工件和卡盘之间容纳热气体的底部间隙的均匀性。根据本发明的一个实施例，层压的Kapton晶片加热器附着在晶片下面的热表面的顶部：至少两个电压区在加热器内隔离，以便在加热器之间产生夹紧力卡盘和晶片，而不必与电导体接触晶片。这些电压区可以通过使用分离的导电元件以及通过在包括电阻加热元件的区域上施加DC偏压来产生。

52. 发明申请

US20060157201A1 Capacitively coupled plasma reactor with magnetic plasma control 有权
标题翻译：具有磁等离子体控制的电容耦合等离子体反应器
公开(公告)号：US20060157201A1
公开(公告)日：2006-07-20
申请号：US11360944
申请日：2006-02-23
申请人： Daniel Hoffman , Matthew Miller , Jang Yang , Heeyeop Chae , Michael Barnes , Tetsuya Ishikawa , Yan Ye
发明人： Daniel Hoffman , Matthew Miller , Jang Yang , Heeyeop Chae , Michael Barnes , Tetsuya Ishikawa , Yan Ye
IPC分类号： C23F1/00
CPC分类号： H01J37/32091 , H01J37/3244 , H01J37/32623 , H01J37/3266
摘要： A plasma reactor includes a vacuum enclosure including a side wall and a ceiling defining a vacuum chamber, and a workpiece support within the chamber and facing the ceiling for supporting a planar workpiece, the workpiece support and the ceiling together defining a processing region between the workpiece support and the ceiling. Process gas inlets furnish a process gas into the chamber. A plasma source power electrode is connected to an RF power generator for capacitively coupling plasma source power into the chamber for maintaining a plasma within the chamber. The reactor further includes at least a first overhead solenoidal electromagnet adjacent the ceiling, the overhead solenoidal electromagnet, the ceiling, the side wall and the workpiece support being located along a common axis of symmetry. A current source is connected to the first solenoidal electromagnet and furnishes a first electric current in the first solenoidal electromagnet whereby to generate within the chamber a magnetic field which is a function of the first electric current, the first electric current having a value such that the magnetic field increases uniformity of plasma ion density radial distribution about the axis of symmetry near a surface of the workpiece support.
摘要翻译：等离子体反应器包括真空外壳，其包括限定真空室的侧壁和顶板，以及腔室内的工件支撑件，并面向天花板以支撑平面工件，工件支撑件和天花板一起限定了工件之间的加工区域支持和天花板。工艺气体入口将工艺气体提供到腔室中。等离子体源功率电极连接到RF功率发生器，用于将等离子体源功率电容耦合到腔室中，以在腔室内维持等离子体。反应器还包括至少第一架空螺线管电磁体，靠近天花板，架空螺线管电磁体，天花板，侧壁和工件支撑件沿着共同的对称轴线定位。电流源连接到第一螺线管电磁体并且在第一螺线管电磁体中提供第一电流，从而在腔室内产生与第一电流有关的磁场，第一电流具有使得磁场增加等离子体离子密度在工件支撑表面附近的对称轴的径向分布的均匀性。

53. 发明申请

US20060130751A1 Cluster tool substrate throughput optimization 有权
标题翻译：集群工具基板吞吐量优化
公开(公告)号：US20060130751A1
公开(公告)日：2006-06-22
申请号：US11344565
申请日：2006-01-30
申请人： Leon Volfovski , Tetsuya Ishikawa
发明人： Leon Volfovski , Tetsuya Ishikawa
IPC分类号： B05C5/00 , B05C15/00
CPC分类号： H01L21/67742 , G03B27/32 , G03D13/006 , G03F7/40 , H01L21/67109 , H01L21/6715 , H01L21/67161 , H01L21/67173 , H01L21/67178 , H01L21/67184 , H01L21/6719 , H01L21/67225 , H01L21/67745 , H01L21/67748 , H01L21/6831 , H01L21/6838 , H01L22/26 , Y10S414/135 , Y10S414/136
摘要： Embodiments generally provide an apparatus and method for processing substrates using a multi-chamber processing system (e.g., a cluster tool) that has an increased system throughput, increased system reliability, substrates processed in the cluster tool have a more repeatable wafer history. In one embodiment, non-orthogonal robot trajectories are used to assure reliable and high speed substrate transfer. In another embodiment, at least one buffering station is used to avoid collision and improve throughput. In another embodiment, optimal positioning of the robots are used to improve throughput.
摘要翻译：实施例通常提供使用具有增加的系统吞吐量，增加的系统可靠性的多腔室处理系统（例如，集群工具）来处理衬底的装置和方法，在群集工具中处理的衬底具有更可重复的晶片历史。在一个实施例中，使用非正交的机器人轨迹来确保可靠和高速的衬底传送。在另一个实施例中，使用至少一个缓冲站来避免冲突并提高吞吐量。在另一个实施例中，使用机器人的最佳定位来提高吞吐量。

54. 发明授权

US06930061B2 Plasma processes for depositing low dielectric constant films 有权
标题翻译：用于沉积低介电常数膜的等离子体工艺
公开(公告)号：US06930061B2
公开(公告)日：2005-08-16
申请号：US10648616
申请日：2003-08-26
申请人： David Cheung , Wai-Fan Yau , Robert P. Mandal , Shin-Puu Jeng , Kuo-Wei Liu , Yung-Cheng Lu , Michael Barnes , Ralf B. Willecke , Farhad Moghadam , Tetsuya Ishikawa , Tze Wing Poon
发明人： David Cheung , Wai-Fan Yau , Robert P. Mandal , Shin-Puu Jeng , Kuo-Wei Liu , Yung-Cheng Lu , Michael Barnes , Ralf B. Willecke , Farhad Moghadam , Tetsuya Ishikawa , Tze Wing Poon
IPC分类号： A01C15/02 , A01C17/00 , C23C16/40 , H01L21/316 , H01L21/768 , H01L21/31
CPC分类号： H01L21/76834 , C23C16/401 , H01L21/02126 , H01L21/02203 , H01L21/02208 , H01L21/02274 , H01L21/0228 , H01L21/02304 , H01L21/02362 , H01L21/31612 , H01L21/76801 , H01L21/76808 , H01L21/7681 , H01L21/76829 , H01L21/76832 , H01L21/76835 , H01L2221/1031 , Y10T428/31663
摘要： A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas at a constant RF power level from about 10 W to about 200 W or a pulsed RF power level from about 20 W to about 500 W. Dissociation of the oxidizing gas can be increased prior to mixing with the organosilicon compound, preferably within a separate microwave chamber, to assist in controlling the carbon content of the deposited film. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop and an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organosilane film is produced by reaction of methylsilane, CH3SiH3, dimethylsilane, (CH3)2SiH2, or 1,1,3,3-tetramethyl-disiloxane, (CH3)2—SiH—O—SiH—(CH3)2, and nitrous oxide, N2O, at a constant RF power level from about 10 W to about 150 W, or a pulsed RF power level from about 20 W to about 250 W during 10% to 30% of the duty cycle.
摘要翻译：一种用于通过有机硅化合物和氧化性气体以约10W至约200W的恒定RF功率水平的反应沉积低介电常数膜的方法和设备或从约20W至约500W的脉冲RF功率水平。在与有机硅化合物混合之前，优选在单独的微波室内可以提高氧化气体的离解，以帮助控制沉积膜的碳含量。氧化的有机硅烷或有机硅氧烷膜具有良好的屏障性能，用作邻近其它介电层的衬垫层或盖层。氧化的有机硅烷或有机硅氧烷膜也可以用作蚀刻停止层和用于制造双镶嵌结构的金属间介电层。氧化的有机硅烷或有机硅氧烷膜也在不同的介电层之间提供优异的粘附性。优选的氧化有机硅烷膜是通过甲基硅烷，CH 3 SiH 3 3，二甲基硅烷，（CH 3 3）2，或者1,1,3,3-四甲基二硅氧烷，（CH 3 3）2 -SiH-O-SiH - （CH 3 3）2 N 2和一氧化二氮N 2 O，在约10W至约150W的恒定RF功率水平，或在占空比的10％至30％期间的约20W至约250W的脉冲RF功率电平。

55. 发明申请

US20050150454A1 Deposition chamber and method for depositing low dielectric constant films 有权
标题翻译：沉积室和沉积低介电常数膜的方法
公开(公告)号：US20050150454A1
公开(公告)日：2005-07-14
申请号：US10997311
申请日：2004-11-23
申请人： Shijian Li , Yaxin Wang , Fred Redeker , Tetsuya Ishikawa , Alan Collins
发明人： Shijian Li , Yaxin Wang , Fred Redeker , Tetsuya Ishikawa , Alan Collins
IPC分类号： C23C16/44 , C23C14/34 , C23C16/40 , C23C16/455 , H01L21/205 , H01L21/31 , C23C16/00
CPC分类号： C23C16/45574 , C23C16/401 , C23C16/45512 , C23C16/45514 , C23C16/45576 , H01J37/3244
摘要： An improved deposition chamber (2) includes a housing (4) defining a chamber (18) which houses a substrate support (14). A mixture of oxygen and SiF4 is delivered through a set of first nozzles (34) and silane is delivered through a set of second nozzles (34a) into the chamber around the periphery (40) of the substrate support. Silane (or a mixture of silane and SiF4) and oxygen are separately injected into the chamber generally centrally above the substrate from orifices (64, 76). The uniform dispersal of the gases coupled with the use of optimal flow rates for each gas results in uniformly low (under 3.4) dielectric constant across the film.
摘要翻译：改进的沉积室（2）包括限定容纳衬底支撑件（14）的腔室（18）的壳体（4）。氧和SiF 4的混合物通过一组第一喷嘴（34）输送，并且硅烷通过一组第二喷嘴（34a）被输送到周围（40）的腔室内底物支撑。将硅烷（或硅烷和SiF 4 Si的混合物）和氧分别从孔口（64,76）中心地注入到基底上方的腔室中。气体的均匀分散与每种气体的最佳流速相结合，导致薄膜均匀低（低于3.4）的介电常数。

56. 发明授权

US06898065B2 Method and apparatus for operating an electrostatic chuck in a semiconductor substrate processing system 失效
标题翻译：用于在半导体衬底处理系统中操作静电卡盘的方法和装置
公开(公告)号：US06898065B2
公开(公告)日：2005-05-24
申请号：US10205991
申请日：2002-07-26
申请人： Brad Mays , Tetsuya Ishikawa , Sergio Fukuda Shoji
发明人： Brad Mays , Tetsuya Ishikawa , Sergio Fukuda Shoji
IPC分类号： H01L21/683 , H01T23/00
CPC分类号： H01L21/6833
摘要： A method and apparatus for a mixed-mode operation of an electrostatic chuck in a semiconductor substrate processing system. The chuck is operated in a voltage mode before and after a processing and is operated in a current mode during the processing to suppress arcing during the processing of a substrate.
摘要翻译：一种用于半导体衬底处理系统中的静电卡盘的混合模式操作的方法和装置。卡盘在处理之前和之后以电压模式操作，并且在处理期间以电流模式操作以在基板的处理期间抑制电弧。

57. 发明授权

US06853141B2 Capacitively coupled plasma reactor with magnetic plasma control 有权
标题翻译：具有磁等离子体控制的电容耦合等离子体反应器
公开(公告)号：US06853141B2
公开(公告)日：2005-02-08
申请号：US10192271
申请日：2002-07-09
申请人： Daniel J. Hoffman , Matthew L. Miller , Jang Gyoo Yang , Heeyeop Chae , Michael Barnes , Tetsuya Ishikawa , Yan Ye
发明人： Daniel J. Hoffman , Matthew L. Miller , Jang Gyoo Yang , Heeyeop Chae , Michael Barnes , Tetsuya Ishikawa , Yan Ye
IPC分类号： H05H1/46 , H01J27/16 , H01J37/08 , H01J37/32 , H01L21/3065 , H01J7/24
CPC分类号： H01J37/32091 , H01J37/3244 , H01J37/32623 , H01J37/3266
摘要： A plasma reactor includes a vacuum enclosure including a side wall and a ceiling defining a vacuum chamber, and a workpiece support within the chamber and facing the ceiling for supporting a planar workpiece, the workpiece support and the ceiling together defining a processing region between the workpiece support and the ceiling. Process gas inlets furnish a process gas into the chamber. A plasma source power electrode is connected to an RF power generator for capacitively coupling plasma source power into the chamber for maintaining a plasma within the chamber. The reactor further includes at least a first overhead solenoidal electromagnet adjacent the ceiling, the overhead solenoidal electromagnet, the ceiling, the sidewall and the workpiece support being located along a common axis of symmetry. A current source is connected to the first solenoidal electromagnet and furnishes a first electric current in the first solenoidal electromagnet whereby to generate within the chamber a magnetic field which is a function of the first electric current, the first electric current having a value such that the magnetic field increases uniformity of plasma ion density radial distribution about the axis of symmetry near a surface of the workpiece support.
摘要翻译：等离子体反应器包括真空外壳，其包括限定真空室的侧壁和顶板，以及腔室内的工件支撑件，并面向天花板以支撑平面工件，工件支撑件和天花板一起限定了工件之间的加工区域支持和天花板。工艺气体入口将工艺气体提供到腔室中。等离子体源功率电极连接到RF功率发生器，用于将等离子体源功率电容耦合到腔室中，以在腔室内维持等离子体。所述反应器还包括至少邻近所述天花板的顶部螺线管电磁体，所述架空螺线管电磁体，所述天花板，所述侧壁和所述工件支撑件沿着公共对称轴线定位。电流源连接到第一螺线管电磁体并且在第一螺线管电磁体中提供第一电流，从而在腔室内产生与第一电流有关的磁场，第一电流具有使得磁场增加等离子体离子密度在工件支撑表面附近的对称轴的径向分布的均匀性。

58. 发明授权

US06833052B2 Deposition chamber and method for depositing low dielectric constant films 失效
标题翻译：沉积室和沉积低介电常数膜的方法
公开(公告)号：US06833052B2
公开(公告)日：2004-12-21
申请号：US10283565
申请日：2002-10-29
申请人： Shijian Li , Yaxin Wang , Fred C. Redeker , Tetsuya Ishikawa , Alan W. Collins
发明人： Shijian Li , Yaxin Wang , Fred C. Redeker , Tetsuya Ishikawa , Alan W. Collins
IPC分类号： C23F1600
CPC分类号： C23C16/45574 , C23C16/401 , C23C16/45512 , C23C16/45514 , C23C16/45576 , H01J37/3244
摘要： An improved deposition chamber (2) includes a housing (4) defining a chamber (18) which houses a substrate support (14). A mixture of oxygen and SiF4 is delivered through a set of first nozzles (34) and silane is delivered through a set of second nozzles (34a) into the chamber around the periphery (40) of the substrate support. Silane (or a mixture of silane and SiF4) and oxygen are separately injected into the chamber generally centrally above the substrate from orifices (64, 76). The uniform dispersal of the gases coupled with the use of optimal flow rates for each gas results in uniformly low (under 3.4) dielectric constant across the film.
摘要翻译：改进的沉积室（2）包括限定容纳衬底支撑件（14）的腔室（18）的壳体（4）。氧和SiF 4的混合物通过一组第一喷嘴（34）输送，并且硅烷通过一组第二喷嘴（34a）输送到围绕衬底支撑件的周边（40）的腔室中。将硅烷（或硅烷和SiF 4的混合物）和氧分别从孔口（64,76）中心地注入到基底上方的腔室中。气体的均匀分散与每种气体的最佳流速相结合，导致薄膜均匀低（低于3.4）的介电常数。

59. 发明授权

US06768878B2 Image forming method and image forming apparatus utilizing a control patch 失效
标题翻译：图像形成方法和使用控制贴片的图像形成装置
公开(公告)号：US06768878B2
公开(公告)日：2004-07-27
申请号：US10277761
申请日：2002-10-22
申请人： Toru Komatsu , Hirotaka Kabashima , Toru Yamaguchi , Tetsuya Ishikawa
发明人： Toru Komatsu , Hirotaka Kabashima , Toru Yamaguchi , Tetsuya Ishikawa
IPC分类号： G03G1500
CPC分类号： G03G15/5037 , G03G15/5041 , G03G15/5045
摘要： An image forming method includes the steps of: forming a plurality of electrostatic latent images of a non-solid control patch by converting a reference input density; detecting a patch potential of each of the plurality of electrostatic latent images; calculating a density value of image data corresponding to a desired patch potential from the detected plurality of patch potentials; detecting a density of each of the plurality of non-solid control patches which has been formed by an imagewise exposure according to the image data of the reference input density obtained by the calculating step; forming an image by controlling an image forming condition in accordance with a detected density signal.
摘要翻译：图像形成方法包括以下步骤：通过转换参考输入密度来形成非固体控制贴片的多个静电潜像; 检测所述多个静电潜像中的每一个的贴片电位; 从检测到的多个贴片电位计算与期望的贴片电位对应的图像数据的浓度值; 根据通过计算步骤获得的参考输入密度的图像数据，检测通过图像曝光形成的多个非固体控制块中的每一个的浓度; 通过根据检测到的浓度信号控制图像形成条件来形成图像。

60. 发明授权

US06759624B2 Method and apparatus for heating a semiconductor wafer plasma reactor vacuum chamber 失效
标题翻译：用于加热半导体晶片等离子体反应器真空室的方法和装置
公开(公告)号：US06759624B2
公开(公告)日：2004-07-06
申请号：US10141025
申请日：2002-05-07
申请人： Ananda H. Kumar , Tetsuya Ishikawa , Kwok Manus Wong , Farahmand E. Askarinam
发明人： Ananda H. Kumar , Tetsuya Ishikawa , Kwok Manus Wong , Farahmand E. Askarinam
IPC分类号： B23K900
CPC分类号： H01J37/32009
摘要： A vacuum chamber, such as a semiconductor wafer plasma processing chamber, is heated by use of a ceramic igniter array consisting of a plurality of ceramic igniters positioned in a substrate.
摘要翻译：通过使用由位于基板中的多个陶瓷点火器组成的陶瓷点火器阵列来加热真空室，例如半导体晶片等离子体处理室。

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