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1. 发明申请

US20060157201A1 Capacitively coupled plasma reactor with magnetic plasma control 有权
标题翻译：具有磁等离子体控制的电容耦合等离子体反应器
公开(公告)号：US20060157201A1
公开(公告)日：2006-07-20
申请号：US11360944
申请日：2006-02-23
申请人： Daniel Hoffman , Matthew Miller , Jang Yang , Heeyeop Chae , Michael Barnes , Tetsuya Ishikawa , Yan Ye
发明人： Daniel Hoffman , Matthew Miller , Jang Yang , Heeyeop Chae , Michael Barnes , Tetsuya Ishikawa , Yan Ye
IPC分类号： C23F1/00
CPC分类号： H01J37/32091 , H01J37/3244 , H01J37/32623 , H01J37/3266
摘要： A plasma reactor includes a vacuum enclosure including a side wall and a ceiling defining a vacuum chamber, and a workpiece support within the chamber and facing the ceiling for supporting a planar workpiece, the workpiece support and the ceiling together defining a processing region between the workpiece support and the ceiling. Process gas inlets furnish a process gas into the chamber. A plasma source power electrode is connected to an RF power generator for capacitively coupling plasma source power into the chamber for maintaining a plasma within the chamber. The reactor further includes at least a first overhead solenoidal electromagnet adjacent the ceiling, the overhead solenoidal electromagnet, the ceiling, the side wall and the workpiece support being located along a common axis of symmetry. A current source is connected to the first solenoidal electromagnet and furnishes a first electric current in the first solenoidal electromagnet whereby to generate within the chamber a magnetic field which is a function of the first electric current, the first electric current having a value such that the magnetic field increases uniformity of plasma ion density radial distribution about the axis of symmetry near a surface of the workpiece support.
摘要翻译：等离子体反应器包括真空外壳，其包括限定真空室的侧壁和顶板，以及腔室内的工件支撑件，并面向天花板以支撑平面工件，工件支撑件和天花板一起限定了工件之间的加工区域支持和天花板。工艺气体入口将工艺气体提供到腔室中。等离子体源功率电极连接到RF功率发生器，用于将等离子体源功率电容耦合到腔室中，以在腔室内维持等离子体。反应器还包括至少第一架空螺线管电磁体，靠近天花板，架空螺线管电磁体，天花板，侧壁和工件支撑件沿着共同的对称轴线定位。电流源连接到第一螺线管电磁体并且在第一螺线管电磁体中提供第一电流，从而在腔室内产生与第一电流有关的磁场，第一电流具有使得磁场增加等离子体离子密度在工件支撑表面附近的对称轴的径向分布的均匀性。

2. 发明申请

US20080023143A1 Capacitively coupled plasma reactor with magnetic plasma control 审中-公开
标题翻译：具有磁等离子体控制的电容耦合等离子体反应器
公开(公告)号：US20080023143A1
公开(公告)日：2008-01-31
申请号：US11881801
申请日：2007-07-27
申请人： Daniel Hoffman , Matthew Miller , Jang Yang , Heeyeop Chae , Michael Barnes , Tetsuya Ishikawa , Yan Ye
发明人： Daniel Hoffman , Matthew Miller , Jang Yang , Heeyeop Chae , Michael Barnes , Tetsuya Ishikawa , Yan Ye
IPC分类号： H01L21/3065 , H01L21/285
CPC分类号： H01J37/32091 , H01J37/3244 , H01J37/32623 , H01J37/3266
摘要： A plasma reactor includes a vacuum enclosure including a side wall and a ceiling defining a vacuum chamber, and a workpiece support within the chamber and facing the ceiling for supporting a planar workpiece, the workpiece support and the ceiling together defining a processing region between the workpiece support and the ceiling. Process gas inlets furnish a process gas into the chamber. A plasma source power electrode is connected to an RF power generator for capacitively coupling plasma source power into the chamber for maintaining a plasma within the chamber. The reactor further includes at least a first overhead solenoidal electromagnet adjacent the ceiling, the overhead solenoidal electromagnet, the ceiling, the side wall and the workpiece support being located along a common axis of symmetry.
摘要翻译：等离子体反应器包括真空外壳，其包括限定真空室的侧壁和顶板，以及腔室内的工件支撑件，并面向天花板以支撑平面工件，工件支撑件和天花板一起限定了工件之间的加工区域支持和天花板。工艺气体入口将工艺气体提供到腔室中。等离子体源功率电极连接到RF功率发生器，用于将等离子体源功率电容耦合到腔室中，以在腔室内维持等离子体。反应器还包括至少第一架空螺线管电磁体，靠近天花板，架空螺线管电磁体，天花板，侧壁和工件支撑件沿着共同的对称轴线定位。

3. 发明申请

US20050001556A1 Capacitively coupled plasma reactor with magnetic plasma control 审中-公开
标题翻译：具有磁等离子体控制的电容耦合等离子体反应器
公开(公告)号：US20050001556A1
公开(公告)日：2005-01-06
申请号：US10841116
申请日：2004-05-07
申请人： Daniel Hoffman , Matthew Miller , Jang Yang , Heeyeop Chae , Michael Barnes , Tetsuya Ishikawa , Yan Ye
发明人： Daniel Hoffman , Matthew Miller , Jang Yang , Heeyeop Chae , Michael Barnes , Tetsuya Ishikawa , Yan Ye
IPC分类号： H01J37/32 , H01J7/24
CPC分类号： H01J37/32091 , H01J37/3244 , H01J37/32623 , H01J37/3266
摘要： A plasma reactor includes a vacuum enclosure including a side wall and a ceiling defining a vacuum chamber, and a workpiece support within the chamber and facing the ceiling for supporting a planar workpiece, the workpiece support and the ceiling together defining a processing region between the workpiece support and the ceiling. Process gas inlets furnish a process gas into the chamber. A plasma source power electrode is connected to an RF power generator for capacitively coupling plasma source power into the chamber for maintaining a plasma within the chamber. The reactor further includes at least a first overhead solenoidal electromagnet adjacent the ceiling, the overhead solenoidal electromagnet, the ceiling, the side wall and the workpiece support being located along a common axis of symmetry. A current source is connected to the first solenoidal electromagnet and furnishes a first electric current in the first solenoidal electromagnet whereby to generate within the chamber a magnetic field which is a function of the first electric current, the first electric current having a value such that the magnetic field increases uniformity of plasma ion density radial distribution about the axis of symmetry near a surface of the workpiece support.
摘要翻译：等离子体反应器包括真空外壳，其包括限定真空室的侧壁和顶板，以及腔室内的工件支撑件，并面向天花板以支撑平面工件，工件支撑件和天花板一起限定了工件之间的加工区域支持和天花板。工艺气体入口将工艺气体提供到腔室中。等离子体源功率电极连接到RF功率发生器，用于将等离子体源功率电容耦合到腔室中，以在腔室内维持等离子体。反应器还包括至少第一架空螺线管电磁体，靠近天花板，架空螺线管电磁体，天花板，侧壁和工件支撑件沿着共同的对称轴线定位。电流源连接到第一螺线管电磁体并且在第一螺线管电磁体中提供第一电流，从而在腔室内产生与第一电流有关的磁场，第一电流具有使得磁场增加等离子体离子密度在工件支撑表面附近的对称轴的径向分布的均匀性。

4. 发明授权

US07955986B2 Capacitively coupled plasma reactor with magnetic plasma control 有权
标题翻译：具有磁等离子体控制的电容耦合等离子体反应器
公开(公告)号：US07955986B2
公开(公告)日：2011-06-07
申请号：US11360944
申请日：2006-02-23
申请人： Daniel J. Hoffman , Matthew L. Miller , Jang Gyoo Yang , Heeyeop Chae , Michael Barnes , Tetsuya Ishikawa , Yan Ye
发明人： Daniel J. Hoffman , Matthew L. Miller , Jang Gyoo Yang , Heeyeop Chae , Michael Barnes , Tetsuya Ishikawa , Yan Ye
IPC分类号： H05H1/40 , C23C16/00 , C23C16/505 , C23C16/52 , H01L21/3065
CPC分类号： H01J37/32091 , H01J37/3244 , H01J37/32623 , H01J37/3266
摘要： A plasma reactor includes a vacuum enclosure including a side wall and a ceiling defining a vacuum chamber, and a workpiece support within the chamber and facing the ceiling for supporting a planar workpiece, the workpiece support and the ceiling together defining a processing region between the workpiece support and the ceiling. Process gas inlets furnish a process gas into the chamber. A plasma source power electrode is connected to an RF power generator for capacitively coupling plasma source power into the chamber for maintaining a plasma within the chamber. The reactor further includes at least a first overhead solenoidal electromagnet adjacent the ceiling, the overhead solenoidal electromagnet, the ceiling, the side wall and the workpiece support being located along a common axis of symmetry. A current source is connected to the first solenoidal electromagnet and furnishes a first electric current in the first solenoidal electromagnet whereby to generate within the chamber a magnetic field which is a function of the first electric current, the first electric current having a value such that the magnetic field increases uniformity of plasma ion density radial distribution about the axis of symmetry near a surface of the workpiece support.
摘要翻译：等离子体反应器包括真空外壳，其包括限定真空室的侧壁和顶板，以及腔室内的工件支撑件，并面向天花板以支撑平面工件，工件支撑件和天花板一起限定了工件之间的加工区域支持和天花板。工艺气体入口将工艺气体提供到腔室中。等离子体源功率电极连接到RF功率发生器，用于将等离子体源功率电容耦合到腔室中，以在腔室内维持等离子体。反应器还包括至少第一架空螺线管电磁体，靠近天花板，架空螺线管电磁体，天花板，侧壁和工件支撑件沿着共同的对称轴线定位。电流源连接到第一螺线管电磁体并且在第一螺线管电磁体中提供第一电流，从而在腔室内产生与第一电流有关的磁场，第一电流具有使得磁场增加等离子体离子密度在工件支撑表面附近的对称轴的径向分布的均匀性。

5. 发明申请

US20110201134A1 CAPACITIVELY COUPLED PLASMA REACTOR WITH MAGNETIC PLASMA CONTROL 审中-公开
标题翻译：具有磁性等离子体控制的电容耦合等离子体反应器
公开(公告)号：US20110201134A1
公开(公告)日：2011-08-18
申请号：US13081005
申请日：2011-04-06
申请人： Daniel J. Hoffman , Matthew L. Miller , Jang Gyoo Yang , Heeyeop Chae , Michael Barnes , Tetsuya Ishikawa , Yan Ye
发明人： Daniel J. Hoffman , Matthew L. Miller , Jang Gyoo Yang , Heeyeop Chae , Michael Barnes , Tetsuya Ishikawa , Yan Ye
IPC分类号： H01L21/66 , H01L21/3065
CPC分类号： H01J37/32091 , H01J37/3244 , H01J37/32623 , H01J37/3266
摘要： A plasma reactor includes a vacuum enclosure including a side wall and a ceiling defining a vacuum chamber, and a workpiece support within the chamber and facing the ceiling for supporting a planar workpiece, the workpiece support and the ceiling together defining a processing region between the workpiece support and the ceiling. Process gas inlets furnish a process gas into the chamber. A plasma source power electrode is connected to an RF power generator for capacitively coupling plasma source power into the chamber for maintaining a plasma within the chamber. The reactor further includes at least a first overhead solenoidal electromagnet adjacent the ceiling, the overhead solenoidal electromagnet, the ceiling, the side wall and the workpiece support being located along a common axis of symmetry. A current source is connected to the first solenoidal electromagnet and furnishes a first electric current in the first solenoidal electromagnet whereby to generate within the chamber a magnetic field which is a function of the first electric current, the first electric current having a value such that the magnetic field increases uniformity of plasma ion density radial distribution about the axis of symmetry near a surface of the workpiece support.
摘要翻译：等离子体反应器包括真空外壳，其包括限定真空室的侧壁和顶板，以及腔室内的工件支撑件，并面向天花板以支撑平面工件，工件支撑件和天花板一起限定了工件之间的加工区域支持和天花板。工艺气体入口将工艺气体提供到腔室中。等离子体源功率电极连接到RF功率发生器，用于将等离子体源功率电容耦合到腔室中，以在腔室内维持等离子体。反应器还包括至少第一架空螺线管电磁体，靠近天花板，架空螺线管电磁体，天花板，侧壁和工件支撑件沿着共同的对称轴线定位。电流源连接到第一螺线管电磁体并且在第一螺线管电磁体中提供第一电流，从而在腔室内产生与第一电流有关的磁场，第一电流具有使得磁场增加等离子体离子密度在工件支撑表面附近的对称轴的径向分布的均匀性。

6. 发明授权

US06853141B2 Capacitively coupled plasma reactor with magnetic plasma control 有权
标题翻译：具有磁等离子体控制的电容耦合等离子体反应器
公开(公告)号：US06853141B2
公开(公告)日：2005-02-08
申请号：US10192271
申请日：2002-07-09
申请人： Daniel J. Hoffman , Matthew L. Miller , Jang Gyoo Yang , Heeyeop Chae , Michael Barnes , Tetsuya Ishikawa , Yan Ye
发明人： Daniel J. Hoffman , Matthew L. Miller , Jang Gyoo Yang , Heeyeop Chae , Michael Barnes , Tetsuya Ishikawa , Yan Ye
IPC分类号： H05H1/46 , H01J27/16 , H01J37/08 , H01J37/32 , H01L21/3065 , H01J7/24
CPC分类号： H01J37/32091 , H01J37/3244 , H01J37/32623 , H01J37/3266
摘要： A plasma reactor includes a vacuum enclosure including a side wall and a ceiling defining a vacuum chamber, and a workpiece support within the chamber and facing the ceiling for supporting a planar workpiece, the workpiece support and the ceiling together defining a processing region between the workpiece support and the ceiling. Process gas inlets furnish a process gas into the chamber. A plasma source power electrode is connected to an RF power generator for capacitively coupling plasma source power into the chamber for maintaining a plasma within the chamber. The reactor further includes at least a first overhead solenoidal electromagnet adjacent the ceiling, the overhead solenoidal electromagnet, the ceiling, the sidewall and the workpiece support being located along a common axis of symmetry. A current source is connected to the first solenoidal electromagnet and furnishes a first electric current in the first solenoidal electromagnet whereby to generate within the chamber a magnetic field which is a function of the first electric current, the first electric current having a value such that the magnetic field increases uniformity of plasma ion density radial distribution about the axis of symmetry near a surface of the workpiece support.
摘要翻译：等离子体反应器包括真空外壳，其包括限定真空室的侧壁和顶板，以及腔室内的工件支撑件，并面向天花板以支撑平面工件，工件支撑件和天花板一起限定了工件之间的加工区域支持和天花板。工艺气体入口将工艺气体提供到腔室中。等离子体源功率电极连接到RF功率发生器，用于将等离子体源功率电容耦合到腔室中，以在腔室内维持等离子体。所述反应器还包括至少邻近所述天花板的顶部螺线管电磁体，所述架空螺线管电磁体，所述天花板，所述侧壁和所述工件支撑件沿着公共对称轴线定位。电流源连接到第一螺线管电磁体并且在第一螺线管电磁体中提供第一电流，从而在腔室内产生与第一电流有关的磁场，第一电流具有使得磁场增加等离子体离子密度在工件支撑表面附近的对称轴的径向分布的均匀性。

7. 发明授权

US06869896B2 Plasma processes for depositing low dielectric constant films 有权
标题翻译：用于沉积低介电常数膜的等离子体工艺
公开(公告)号：US06869896B2
公开(公告)日：2005-03-22
申请号：US10647959
申请日：2003-08-26
申请人： David Cheung , Wai-Fan Yau , Robert P. Mandal , Shin-Puu Jeng , Kuo-Wei Liu , Yung-Cheng Lu , Michael Barnes , Ralf B. Willecke , Farhad Moghadam , Tetsuya Ishikawa , Tze Wing Poon
发明人： David Cheung , Wai-Fan Yau , Robert P. Mandal , Shin-Puu Jeng , Kuo-Wei Liu , Yung-Cheng Lu , Michael Barnes , Ralf B. Willecke , Farhad Moghadam , Tetsuya Ishikawa , Tze Wing Poon
IPC分类号： C23C16/40 , H01L21/316 , H01L21/768 , H01L21/31
CPC分类号： H01L21/76835 , C23C16/401 , H01L21/02126 , H01L21/02203 , H01L21/02208 , H01L21/02274 , H01L21/0228 , H01L21/02304 , H01L21/02362 , H01L21/31612 , H01L21/76801 , H01L21/76808 , H01L21/7681 , H01L21/76829 , H01L21/76832 , H01L21/76834 , H01L2221/1031 , Y10T428/24926 , Y10T428/31663
摘要： A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas comprising carbon at a constant RF power level. Dissociation of the oxidizing gas can be increased prior to mixing with the organosilicon compound, preferably within a separate microwave chamber, to assist in controlling the carbon content of the deposited film. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop and an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers.
摘要翻译：一种通过有机硅化合物和包含碳的氧化气体以恒定的RF功率水平的反应沉积低介电常数膜的方法和装置。在与有机硅化合物混合之前，优选在单独的微波室内可以提高氧化气体的离解，以帮助控制沉积膜的碳含量。氧化的有机硅烷或有机硅氧烷膜具有良好的屏障性能，用作邻近其它介电层的衬垫层或盖层。氧化的有机硅烷或有机硅氧烷膜也可以用作蚀刻停止层和用于制造双镶嵌结构的金属间介电层。氧化的有机硅烷或有机硅氧烷膜也在不同的介电层之间提供优异的粘附性。

8. 发明授权

US06734115B2 Plasma processes for depositing low dielectric constant films 有权
公开(公告)号：US06734115B2
公开(公告)日：2004-05-11
申请号：US10229992
申请日：2002-08-27
申请人： David Cheung , Wai-Fan Yau , Robert P. Mandal , Shin-Puu Jeng , Kuo-Wei Liu , Yung-Cheng Lu , Michael Barnes , Ralf B. Willecke , Farhad Moghadam , Tetsuya Ishikawa , Tze Wing Poon
发明人： David Cheung , Wai-Fan Yau , Robert P. Mandal , Shin-Puu Jeng , Kuo-Wei Liu , Yung-Cheng Lu , Michael Barnes , Ralf B. Willecke , Farhad Moghadam , Tetsuya Ishikawa , Tze Wing Poon
IPC分类号： H01L2131
CPC分类号： H01L21/76835 , C23C16/401 , H01L21/02126 , H01L21/02203 , H01L21/02208 , H01L21/02274 , H01L21/0228 , H01L21/02304 , H01L21/02362 , H01L21/31612 , H01L21/76801 , H01L21/76808 , H01L21/7681 , H01L21/76829 , H01L21/76832 , H01L21/76834 , H01L2221/1031 , Y10T428/24926 , Y10T428/31663
摘要： A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas comprising carbon at a constant RF power level. Dissociation of the oxidizing gas can be increased prior to mixing with the organosilicon compound, preferably within a separate microwave chamber, to assist in controlling the carbon content of the deposited film. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop and an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers.

9. 发明授权

US06541282B1 Plasma processes for depositing low dielectric constant films 失效
标题翻译：用于沉积低介电常数膜的等离子体工艺
公开(公告)号：US06541282B1
公开(公告)日：2003-04-01
申请号：US09594187
申请日：2000-06-13
申请人： David Cheung , Wai-Fan Yau , Robert P. Mandal , Shin-Puu Jeng , Kuo-Wei Liu , Yung-Cheng Lu , Michael Barnes , Ralf B. Willecke , Farhad Moghadam , Tetsuya Ishikawa , Tze Wing Poon
发明人： David Cheung , Wai-Fan Yau , Robert P. Mandal , Shin-Puu Jeng , Kuo-Wei Liu , Yung-Cheng Lu , Michael Barnes , Ralf B. Willecke , Farhad Moghadam , Tetsuya Ishikawa , Tze Wing Poon
IPC分类号： H05H102
CPC分类号： H01L21/76835 , C23C16/401 , H01L21/02126 , H01L21/02203 , H01L21/02208 , H01L21/02274 , H01L21/0228 , H01L21/02304 , H01L21/02362 , H01L21/31612 , H01L21/76801 , H01L21/76808 , H01L21/7681 , H01L21/76829 , H01L21/76832 , H01L21/76834 , H01L2221/1031 , Y10T428/24926 , Y10T428/31663
摘要： A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas at a constant RF power level from about 10 W to about 200 W or a pulsed RF power level from about 20 W to about 500 W. Dissociation of the oxidizing gas can be increased prior to mixing with the organosilicon compound, preferably within a separate microwave chamber, to assist in controlling the carbon content of the deposited film. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop and an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organosilane film is produced by reaction of methylsilane, CH3SiH3, or dimethylsilane, (CH3)2SiH2, and nitrous oxide, N2O; at a constant RF power level from about 10 W to about 150 W, or a pulsed RF power level from about 20 W to about 250 W during 10% to 30% of the duty cycle.
摘要翻译：一种用于通过有机硅化合物和氧化性气体以约10W至约200W的恒定RF功率水平的反应沉积低介电常数膜的方法和设备或从约20W至约500W的脉冲RF功率水平。在与有机硅化合物混合之前，优选在单独的微波室内可以提高氧化气体的离解，以帮助控制沉积膜的碳含量。氧化的有机硅烷或有机硅氧烷膜具有良好的屏障性能，用作邻近其它介电层的衬垫层或盖层。氧化的有机硅烷或有机硅氧烷膜也可以用作蚀刻停止层和用于制造双镶嵌结构的金属间介电层。氧化的有机硅烷或有机硅氧烷膜也在不同的介电层之间提供优异的粘附性。优选的氧化有机硅烷膜是通过甲基硅烷，CH 3 SiH 3或二甲基硅烷，（CH 3）2 SiH 2和一氧化二氮，N 2 O的反应制备的; 在约10W至约150W的恒定RF功率水平或在占空比的10％至30％期间从约20W至约250W的脉冲RF功率水平。

10. 发明授权

US06930061B2 Plasma processes for depositing low dielectric constant films 有权
标题翻译：用于沉积低介电常数膜的等离子体工艺
公开(公告)号：US06930061B2
公开(公告)日：2005-08-16
申请号：US10648616
申请日：2003-08-26
申请人： David Cheung , Wai-Fan Yau , Robert P. Mandal , Shin-Puu Jeng , Kuo-Wei Liu , Yung-Cheng Lu , Michael Barnes , Ralf B. Willecke , Farhad Moghadam , Tetsuya Ishikawa , Tze Wing Poon
发明人： David Cheung , Wai-Fan Yau , Robert P. Mandal , Shin-Puu Jeng , Kuo-Wei Liu , Yung-Cheng Lu , Michael Barnes , Ralf B. Willecke , Farhad Moghadam , Tetsuya Ishikawa , Tze Wing Poon
IPC分类号： A01C15/02 , A01C17/00 , C23C16/40 , H01L21/316 , H01L21/768 , H01L21/31
CPC分类号： H01L21/76834 , C23C16/401 , H01L21/02126 , H01L21/02203 , H01L21/02208 , H01L21/02274 , H01L21/0228 , H01L21/02304 , H01L21/02362 , H01L21/31612 , H01L21/76801 , H01L21/76808 , H01L21/7681 , H01L21/76829 , H01L21/76832 , H01L21/76835 , H01L2221/1031 , Y10T428/31663
摘要： A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas at a constant RF power level from about 10 W to about 200 W or a pulsed RF power level from about 20 W to about 500 W. Dissociation of the oxidizing gas can be increased prior to mixing with the organosilicon compound, preferably within a separate microwave chamber, to assist in controlling the carbon content of the deposited film. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop and an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organosilane film is produced by reaction of methylsilane, CH3SiH3, dimethylsilane, (CH3)2SiH2, or 1,1,3,3-tetramethyl-disiloxane, (CH3)2—SiH—O—SiH—(CH3)2, and nitrous oxide, N2O, at a constant RF power level from about 10 W to about 150 W, or a pulsed RF power level from about 20 W to about 250 W during 10% to 30% of the duty cycle.
摘要翻译：一种用于通过有机硅化合物和氧化性气体以约10W至约200W的恒定RF功率水平的反应沉积低介电常数膜的方法和设备或从约20W至约500W的脉冲RF功率水平。在与有机硅化合物混合之前，优选在单独的微波室内可以提高氧化气体的离解，以帮助控制沉积膜的碳含量。氧化的有机硅烷或有机硅氧烷膜具有良好的屏障性能，用作邻近其它介电层的衬垫层或盖层。氧化的有机硅烷或有机硅氧烷膜也可以用作蚀刻停止层和用于制造双镶嵌结构的金属间介电层。氧化的有机硅烷或有机硅氧烷膜也在不同的介电层之间提供优异的粘附性。优选的氧化有机硅烷膜是通过甲基硅烷，CH 3 SiH 3 3，二甲基硅烷，（CH 3 3）2，或者1,1,3,3-四甲基二硅氧烷，（CH 3 3）2 -SiH-O-SiH - （CH 3 3）2 N 2和一氧化二氮N 2 O，在约10W至约150W的恒定RF功率水平，或在占空比的10％至30％期间的约20W至约250W的脉冲RF功率电平。

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