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51. 发明授权

US07842956B2 Nitride semiconductor laser element and fabrication method thereof 有权
标题翻译：氮化物半导体激光元件及其制造方法
公开(公告)号：US07842956B2
公开(公告)日：2010-11-30
申请号：US11636570
申请日：2006-12-11
申请人： Susumu Ohmi , Kunihiro Takatani , Fumio Yamashita , Mototaka Taneya
发明人： Susumu Ohmi , Kunihiro Takatani , Fumio Yamashita , Mototaka Taneya
IPC分类号： H01L27/15 , H01L29/26
CPC分类号： H01S5/32341 , H01S5/0202 , H01S5/0425 , H01S2301/176
摘要： On a nitride semiconductor layered portion formed on a substrate, there are formed an insulating film and a p-side electrode in this order. Furthermore, an end portion electrode protection layer is formed above the p-side electrode, around a position where cleavage will take place.
摘要翻译：在形成于基板上的氮化物半导体层叠部上依次形成绝缘膜和p侧电极。此外，端部电极保护层形成在p侧电极的上方，围绕将发生分裂的位置。

52. 发明申请

US20070131960A1 Nitride semiconductor laser element and fabrication method thereof 有权
标题翻译：氮化物半导体激光元件及其制造方法
公开(公告)号：US20070131960A1
公开(公告)日：2007-06-14
申请号：US11636570
申请日：2006-12-11
申请人： Susumu Ohmi , Kunihiro Takatani , Fumio Yamashita , Mototaka Taneya
发明人： Susumu Ohmi , Kunihiro Takatani , Fumio Yamashita , Mototaka Taneya
IPC分类号： H01L33/00
CPC分类号： H01S5/32341 , H01S5/0202 , H01S5/0425 , H01S2301/176
摘要： On a nitride semiconductor layered portion formed on a substrate, there are formed an insulating film and a p-side electrode in this order. Furthermore, an end portion electrode protection layer is formed above the p-side electrode, around a position where cleavage will take place.
摘要翻译：在形成于基板上的氮化物半导体层叠部上依次形成绝缘膜和p侧电极。此外，端部电极保护层形成在p侧电极的上方，围绕将发生分裂的位置。

53. 发明申请

US20070115210A1 Light emitting apparatus, method for driving the light emitting apparatus, and display apparatus including the light emitting apparatus 有权
公开(公告)号：US20070115210A1
公开(公告)日：2007-05-24
申请号：US11644668
申请日：2006-12-22
申请人： Takeshi Kamikawa , Shigetoshi Ito , Mototaka Taneya
发明人： Takeshi Kamikawa , Shigetoshi Ito , Mototaka Taneya
IPC分类号： G09G3/14
CPC分类号： H05B33/0866 , G09G3/14 , G09G3/2014 , G09G3/2081 , G09G3/32 , G09G2310/0272 , G09G2320/0626 , G09G2320/0666 , G09G2330/021 , H01L2224/48091 , H01L2224/49107 , H05B33/0818 , H05B33/0821 , H05B33/086 , H01L2924/00014
摘要： A light emitting apparatus comprises a light emitting section for emitting light, a color of the light being changed with a value of a driving current, and a driving section for driving the light emitting section so that the light emitting section emits light having a desired color and a desired intensity, by generating the driving current based on a signal designating the desired color and a signal designating the desired intensity and by applying the driving current to the light emitting section.

54. 发明申请

US20050226295A1 Semiconductor laser device 有权
标题翻译：半导体激光器件
公开(公告)号：US20050226295A1
公开(公告)日：2005-10-13
申请号：US10510324
申请日：2003-03-26
申请人： Mototaka Taneya , Yukio Yamasaki , Shigetoshi Ito
发明人： Mototaka Taneya , Yukio Yamasaki , Shigetoshi Ito
IPC分类号： H01S5/20 , H01S5/00
CPC分类号： H01S5/20
摘要： A semiconductor laser device having a waveguide constructed in a stack of layers including, on a substrate transparent and having a refractive index ns for laser light, a first clad layer of a refractive index nc1, a second clad layer of a refractive index nc2, a third clad layer of a refractive index nc3, a first conductivity type guide layer of a refractive index ng, an active quantum well layer, a second conductivity type guide layer, a second conductivity type clad layer, and a second conductivity type contact layer deposited in this order, wherein the waveguide has an effective refractive index ne, and a relationship of nc2
摘要翻译：一种半导体激光器件，其具有以堆叠层构成的波导，所述波导包括在透明且具有用于激光的折射率n _{的衬底上的折射率n C 1的第一覆盖层折射率为n3c2的第二覆盖层，折射率为n3c3的第三覆盖层，折射率为n3c3的第一导电型引导层，指数n N，有源量子阱层，第二导电型导向层，第二导电型覆盖层和第二导电型接触层，其中波导具有有效的折射率（N c1，n3，c3，...，n3）的关系，N _{> N（N N，N，N）满足。}}

55. 发明申请

US20050141577A1 Nitride semiconductor light-emitting device, method of fabricating it, and semiconductor optical apparatus 有权
标题翻译：氮化物半导体发光元件及其制造方法以及半导体光学装置
公开(公告)号：US20050141577A1
公开(公告)日：2005-06-30
申请号：US10831659
申请日：2004-04-26
申请人： Yoshihiro Ueta , Teruyoshi Takakura , Takeshi Kamikawa , Yuhzoh Tsuda , Shigetoshi Ito , Takayuki Yuasa , Mototaka Taneya , Kensaku Motoki
发明人： Yoshihiro Ueta , Teruyoshi Takakura , Takeshi Kamikawa , Yuhzoh Tsuda , Shigetoshi Ito , Takayuki Yuasa , Mototaka Taneya , Kensaku Motoki
IPC分类号： H01S5/00 , H01S5/02 , H01S5/22 , H01S5/32 , H01S5/343
CPC分类号： B82Y20/00 , H01S5/0207 , H01S5/2201 , H01S5/3202 , H01S5/34333 , H01S2304/12
摘要： A nitride semiconductor laser device has a nitride semiconductor substrate that includes a dislocation-concentrated region 102 and a wide low-dislocation region and that has the top surface thereof slanted at an angle in the range of 0.3° to 0.7° relative to the C plane and a nitride semiconductor layer laid on top thereof. The nitride semiconductor layer has a depression immediately above the dislocation-concentrated region, and has, in a region thereof other than the depression, a high-quality quantum well active layer with good flatness and without cracks, a layer that, as is grown, readily exhibits p-type conductivity, and a stripe-shaped laser light waveguide region. The laser light waveguide region is formed above the low-dislocation region. This helps realize a nitride semiconductor laser device that offers a longer life.
摘要翻译：氮化物半导体激光器件具有氮化物半导体衬底，其包括位错集中区域102和宽低位错区域，并且其顶表面相对于C平面以0.3°至0.7°的范围内的角度倾斜和位于其顶部的氮化物半导体层。氮化物半导体层在位错集中区域正上方具有凹陷，并且在除了凹陷以外的区域中具有良好的平坦度且没有裂纹的高质量的量子阱活性层，易于显示p型导电性，以及条状激光波导区域。激光波导区域形成在低位错区域的上方。这有助于实现提供更长寿命的氮化物半导体激光器件。

56. 发明授权

US06455877B1 III-N compound semiconductor device 有权
标题翻译： III-N族化合物半导体器件
公开(公告)号：US06455877B1
公开(公告)日：2002-09-24
申请号：US09657875
申请日：2000-09-08
申请人： Atsushi Ogawa , Takayuki Yuasa , Yoshihiro Ueta , Yuhzoh Tsuda , Masahiro Araki , Mototaka Taneya
发明人： Atsushi Ogawa , Takayuki Yuasa , Yoshihiro Ueta , Yuhzoh Tsuda , Masahiro Araki , Mototaka Taneya
IPC分类号： H01L3300
CPC分类号： H01L33/32 , H01L33/025 , H01S5/0421 , H01S5/0425 , H01S5/32341
摘要： A GaN light-emitting device is provided having a low specific contact resistance of an n-type electrode as well as a low threshold voltage or threshold current density. The GaN light-emitting device has an electrode formed on a nitrogen-terminated surface of a GaN substrate. Specifically, the GaN light-emitting device includes the GaN substrate, a plurality of GaN compound semiconductor layers formed on the GaN substrate, and the n-type electrode and a p-type electrode, wherein the semiconductor substrate is of n-type and the n-type electrode is formed on the nitrogen-terminated surface of the semiconductor substrate. The concentration of n-type impurities in the substrate preferably ranges from 1×1017 cm−3 to 1×1021 cm−3. The substrate preferably includes at least a first portion forming the nitrogen-terminated surface and having a first concentration of n-type impurities and a second portion having a second concentration of n-type impurities lower than the first concentration of n-type impurities.
摘要翻译：提供具有n型电极的低比接触电阻以及低阈值电压或阈值电流密度的GaN发光器件。 GaN发光器件具有形成在GaN衬底的氮封端表面上的电极。具体地，GaN发光器件包括GaN衬底，形成在GaN衬底上的多个GaN化合物半导体层，以及n型电极和p型电极，其中半导体衬底为n型， n型电极形成在半导体衬底的氮封端表面上。衬底中n型杂质的浓度优选为1×10 17 cm -3至1×10 21 cm -3。基板优选至少包括形成氮封端表面并具有第一浓度的n型杂质的第一部分和具有比第一浓度的n型杂质低的n型杂质的第二浓度的第二部分。

57. 发明授权

US5880028A Ridge waveguide type distributed feedback semiconductor laser device and method for manufacturing the same 失效
标题翻译：脊波导型分布反馈半导体激光器件及其制造方法
公开(公告)号：US5880028A
公开(公告)日：1999-03-09
申请号：US700555
申请日：1996-08-07
申请人： Kei Yamamoto , Takuma Hiramatsu , Koji Takahashi , Mototaka Taneya
发明人： Kei Yamamoto , Takuma Hiramatsu , Koji Takahashi , Mototaka Taneya
IPC分类号： H01S5/00 , H01S5/12 , H01S5/22 , H01L21/302
CPC分类号： H01S5/12 , H01S5/22
摘要： A ridge waveguide type distributed feedback semiconductor laser device includes a diffraction grating formed on a surface of a semiconductor wafer, a semiconductor layer formed on the diffraction grating, the semiconductor layer serving to alleviate the irregularity of the diffraction grating, and a stripe-like ridge having a cladding layer and a contact layer formed on the semiconductor layer. Also, a method for manufacturing the ridge waveguide type distributed feedback semiconductor laser device is disclosed.
摘要翻译：脊波导型分布反馈半导体激光器件包括形成在半导体晶片的表面上的衍射光栅，形成在衍射光栅上的半导体层，用于减轻衍射光栅的不规则性的半导体层和条状脊具有在半导体层上形成的覆层和接触层。此外，公开了一种用于制造脊波导型分布反馈半导体激光器件的方法。

58. 发明授权

US5727015A Distributed feedback semiconductor laser 失效
标题翻译：分布式反馈半导体激光器
公开(公告)号：US5727015A
公开(公告)日：1998-03-10
申请号：US611792
申请日：1996-03-06
申请人： Koji Takahashi , Fumihiro Kounushi , Mototaka Taneya
发明人： Koji Takahashi , Fumihiro Kounushi , Mototaka Taneya
IPC分类号： H01S5/00 , H01S5/12 , H01S3/1055
CPC分类号： H01S5/1228
摘要： A gain coupled distributed feedback semiconductor laser includes an active layer and a diffraction grating provided in the vicinity of the active layer and having a plurality of light absorption layers periodically arranged along a resonator length direction. The order of the diffraction grating is one, a duty of the diffraction grating is in the range of about 0.4 to about 0.8, and a thickness of the light absorption layer is in the range of about 6 nm to about 30 nm.
摘要翻译：增益耦合分布反馈半导体激光器包括设置在有源层附近的有源层和衍射光栅，并具有沿着谐振器长度方向周期性排列的多个光吸收层。衍射光栅的顺序是一个，衍射光栅的占空比在约0.4至约0.8的范围内，并且光吸收层的厚度在约6nm至约30nm的范围内。

59. 发明授权

US5436884A Optical data reading apparatus and an optical data reading method 失效
标题翻译：光学数据读取装置和光学数据读取方法
公开(公告)号：US5436884A
公开(公告)日：1995-07-25
申请号：US125473
申请日：1993-09-22
申请人： Mototaka Taneya
发明人： Mototaka Taneya
IPC分类号： G11B7/005 , G11B7/135 , G11B11/10 , G11B11/105 , G11B5/09
CPC分类号： G11B11/10545 , G11B11/10515 , G11B7/005 , G11B7/135
摘要： According to the optical data reading apparatus and an optical data reading method of the present invention, a semiconductor laser emits laser light while periodically modulating a frequency or a phase thereof. The laser light is divided into a first beam to be radiated to a magnetooptical disc and a second beam. The first and the second beams run along optical paths having different lengths from each other, and thus have different frequencies or phases from each other. The first beam reflected by the magnetooptical disc and the second beam are mixed and then incident on a photodetector. An electric output extracted from the photodetector based on a frequency difference or a phase difference between the first and the second beams, and thus data stored in the magnetooptic disc is restored.
摘要翻译：根据本发明的光学数据读取装置和光学数据读取方法，半导体激光器在周期性地调制其频率或相位的同时发射激光。激光被分成要被辐射到磁光盘和第二光束的第一光束。第一和第二光束沿着具有彼此不同长度的光路延伸，并且因此彼此具有不同的频率或相位。由磁光盘和第二光束反射的第一光束被混合，然后入射到光电检测器上。基于第一和第二光束之间的频率差或相位差从光电检测器提取的电输出，从而恢复存储在磁光盘中的数据。

60. 发明授权

US5361271A Semiconductor laser 失效
标题翻译：半导体激光器
公开(公告)号：US5361271A
公开(公告)日：1994-11-01
申请号：US120277
申请日：1993-09-13
申请人： Haruhisa Takiguchi , Kazuhiko Inoguchi , Hiroaki Kudo , Satoshi Sugahara , Mototaka Taneya
发明人： Haruhisa Takiguchi , Kazuhiko Inoguchi , Hiroaki Kudo , Satoshi Sugahara , Mototaka Taneya
IPC分类号： H01S5/00 , H01S5/20 , H01S5/22 , H01S5/223 , H01S5/323 , H01S3/19
CPC分类号： H01S5/2231 , H01S5/2004 , H01S5/2205 , H01S5/2206 , H01S5/223 , H01S5/2232 , H01S5/32316
摘要： A semiconductor laser of the present invention includes: a semiconductor substrate, a multi-layered structure formed on the semiconductor substrate and a current and light confining section formed on the multi-layered structure, wherein the current and light confining section includes at least two multi-layered current and light confining portions each having a laser beam transmission layer and a laser beam absorption layer formed on the laser beam transmission layer, and at least one stripe groove which spatially separates the at least two current and light confining portions; wherein an equivalent refractive index in the multi-layered current and light confining portions with respect to a laser beam in a fundamental transverse mode is made smaller than that within the stripe groove; wherein the multi-layered structure includes an active layer, and the active layer has a region positioned below the stripe groove of the current and light confining section and regions positioned below a respective one of the multi-layered current and light confining portions; and wherein a optical confinement factor .GAMMA. of the active layer outside the stripe groove with respect to a laser beam in a guide mode is larger than that outside the stripe groove with respect to a laser beam in an anti-guide mode.
摘要翻译：本发明的半导体激光器包括：半导体衬底，形成在半导体衬底上的多层结构和形成在多层结构上的电流和光限制部分，其中电流和光限制部分包括至少两个多重结构 - 每个具有形成在激光束透射层上的激光束透射层和激光束吸收层的电流和光限制部分以及空间上分离至少两个电流和光限制部分的至少一个条纹槽; 其中相对于基本横向模式的激光束的多层电流和光限制部分中的等效折射率小于条纹槽内的折射率; 其中所述多层结构包括有源层，并且所述有源层具有位于所述电流和光限制部分的条纹槽下面的区域和位于所述多层电流和光限制部分中的相应一个之下的区域; 并且其中在导向模式下相对于激光束在条纹槽外部的有源层的光限制因子GAMMA相对于反向导向模式中的激光束大于条纹槽外侧的光限制因子GAMMA。

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