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1. 发明申请

US20050226295A1 Semiconductor laser device 有权
标题翻译：半导体激光器件
公开(公告)号：US20050226295A1
公开(公告)日：2005-10-13
申请号：US10510324
申请日：2003-03-26
申请人： Mototaka Taneya , Yukio Yamasaki , Shigetoshi Ito
发明人： Mototaka Taneya , Yukio Yamasaki , Shigetoshi Ito
IPC分类号： H01S5/20 , H01S5/00
CPC分类号： H01S5/20
摘要： A semiconductor laser device having a waveguide constructed in a stack of layers including, on a substrate transparent and having a refractive index ns for laser light, a first clad layer of a refractive index nc1, a second clad layer of a refractive index nc2, a third clad layer of a refractive index nc3, a first conductivity type guide layer of a refractive index ng, an active quantum well layer, a second conductivity type guide layer, a second conductivity type clad layer, and a second conductivity type contact layer deposited in this order, wherein the waveguide has an effective refractive index ne, and a relationship of nc2
摘要翻译：一种半导体激光器件，其具有以堆叠层构成的波导，所述波导包括在透明且具有用于激光的折射率n _{的衬底上的折射率n C 1的第一覆盖层折射率为n3c2的第二覆盖层，折射率为n3c3的第三覆盖层，折射率为n3c3的第一导电型引导层，指数n N，有源量子阱层，第二导电型导向层，第二导电型覆盖层和第二导电型接触层，其中波导具有有效的折射率（N c1，n3，c3，...，n3）的关系，N _{> N（N N，N，N）满足。}}

2. 发明授权

US07177336B2 Semiconductor laser device 有权
标题翻译：半导体激光器件
公开(公告)号：US07177336B2
公开(公告)日：2007-02-13
申请号：US10510324
申请日：2003-03-26
申请人： Mototaka Taneya , Yukio Yamasaki , Shigetoshi Ito
发明人： Mototaka Taneya , Yukio Yamasaki , Shigetoshi Ito
IPC分类号： H01S3/03 , H01S5/00 , H01S5/20 , H01S5/323
CPC分类号： H01S5/20
摘要： A semiconductor laser device having a waveguide constructed in a stack of layers including, on a substrate transparent and having a refractive index ns for laser light, a first clad layer of a refractive index nc1, a second clad layer of a refractive index nc2, a third clad layer of a refractive index nc3, a first conductivity type guide layer of a refractive index ng, an active quantum well layer, a second conductivity type guide layer, a second conductivity type clad layer, and a second conductivity type contact layer deposited in this order, wherein the waveguide has an effective refractive index ne, and a relationship of nc2
摘要翻译：一种半导体激光器件，其具有以堆叠层构成的波导，所述波导包括在透明且具有用于激光的折射率n _{的衬底上的折射率n C 1的第一覆盖层折射率为n3c2的第二覆盖层，折射率为n3c3的第三覆盖层，折射率为n3c3的第一导电型引导层，指数n N，有源量子阱层，第二导电型导向层，第二导电型覆盖层和第二导电型接触层，其中波导具有有效的折射率（N c1，n3，c3，...，n3）的关系，N _{> N（N N，N，N）满足。}}

3. 发明授权

US06493367B1 Semiconductor laser device and optical information reproduction apparatus 有权
标题翻译：半导体激光装置及光信息再生装置
公开(公告)号：US06493367B1
公开(公告)日：2002-12-10
申请号：US09611424
申请日：2000-07-07
申请人： Shigetoshi Ito , Yukio Yamasaki , Mototaka Taneya
发明人： Shigetoshi Ito , Yukio Yamasaki , Mototaka Taneya
IPC分类号： H01S500
CPC分类号： B82Y20/00 , G11B7/127 , H01S5/005 , H01S5/2004 , H01S5/3219 , H01S5/34333 , H01S5/3434 , H01S2301/18
摘要： A semiconductor laser device of the present invention includes, in this order: a GaN layer; an Alx1Ga1-x1N (0.05≦x1≦0.2) lower cladding layer; an Iny1Ga1-y1N (0
摘要翻译：本发明的半导体激光装置依次包括：GaN层; Alx1Ga1-x1N（0.05 <= x1 <= 0.2）下包层; Iny1Ga1-y1N（0

4. 发明授权

US07421000B2 Semiconductor laser device 有权
标题翻译：半导体激光器件
公开(公告)号：US07421000B2
公开(公告)日：2008-09-02
申请号：US11704348
申请日：2007-02-09
申请人： Mototaka Taneya , Yukio Yamasaki , Shigetoshi Ito
发明人： Mototaka Taneya , Yukio Yamasaki , Shigetoshi Ito
IPC分类号： H01S5/00
CPC分类号： H01S5/20
摘要： A semiconductor laser device having a waveguide constructed in a stack of layers including, on a substrate that is transparent and has a refractive index ns for laser light, a first clad layer of a refractive index nc1, a second clad layer of a refractive index nc2, a third clad layer of a refractive index nc3, a first conductivity type guide layer of a refractive index ng, an active quantum well layer, a second conductivity type guide layer, a second conductivity type clad layer, and a second conductivity type contact layer deposited in that order, wherein the waveguide has an effective refractive index ne, and the relationship nc2
摘要翻译：一种半导体激光器件，其具有以堆叠层构成的波导，所述波导包括在透明且具有用于激光的折射率n _{的衬底上，折射率n}

5. 发明申请

US20070153854A1 Semiconductor laser device 有权
标题翻译：半导体激光器件
公开(公告)号：US20070153854A1
公开(公告)日：2007-07-05
申请号：US11704348
申请日：2007-02-09
申请人： Mototaka Taneya , Yukio Yamasaki , Shigetoshi Ito
发明人： Mototaka Taneya , Yukio Yamasaki , Shigetoshi Ito
IPC分类号： H01S5/00
CPC分类号： H01S5/20
摘要： A semiconductor laser device having a waveguide constructed in a stack of layers including, on a substrate that is transparent and has a refractive index ns for laser light, a first clad layer of a refractive index nc1, a second clad layer of a refractive index nc2, a third clad layer of a refractive index nc3, a first conductivity type guide layer of a refractive index ng, an active quantum well layer, a second conductivity type guide layer, a second conductivity type clad layer, and a second conductivity type contact layer deposited in that order, wherein the waveguide has an effective refractive index ne, and the relationship nc2
摘要翻译：一种半导体激光器件，其具有以堆叠层构成的波导，所述波导包括在透明且具有用于激光的折射率n _{的衬底上，折射率n}

6. 发明授权

US06891201B2 Nitride semiconductor laser element and optical device containing it 有权
标题翻译：氮化物半导体激光元件和含有它的光学器件
公开(公告)号：US06891201B2
公开(公告)日：2005-05-10
申请号：US10466339
申请日：2002-01-09
申请人： Yuhzoh Tsuda , Takayuki Yuasa , Shigetoshi Ito , Mototaka Taneya , Yukio Yamasaki
发明人： Yuhzoh Tsuda , Takayuki Yuasa , Shigetoshi Ito , Mototaka Taneya , Yukio Yamasaki
IPC分类号： H01L33/00 , H01S5/02 , H01S5/223 , H01S5/323 , H01S5/343
CPC分类号： B82Y20/00 , H01L33/0075 , H01S5/0207 , H01S5/2231 , H01S5/32341 , H01S5/34333 , H01S2304/12
摘要： A nitride semiconductor light emitting device includes a processed substrate (101a) including a groove and a hill formed on a main surface of a nitride semiconductor substrate, a nitride semiconductor underlayer (102) covering the groove and the hill of the processed substrate, and a light emitting device structure having a light emitting layer (106) including a quantum well layer or a quantum well layer and a barrier layer in contact with the quantum well layer between an n type layer (103-105) and a p type layer (107-110) over the nitride semiconductor underlayer. A current-constricting portion of the light emitting device structure is formed above a region more than 1 μm away from the center of the groove in the width direction and more than 1 μm away from the center of the hill in the width direction.
摘要翻译：氮化物半导体发光器件包括：处理衬底（101a），其包括形成在氮化物半导体衬底的主表面上的沟槽和丘丘;覆盖所述沟槽和所述被处理衬底的所述山丘的氮化物半导体衬底（102），以及具有包括量子阱层或量子阱层的发光层（106）和与n型层（103-105）和ap型层（107）之间的量子阱层接触的阻挡层的发光器件结构 -110）在氮化物半导体衬底上。发光器件结构的电流限制部分形成在距宽度方向上的槽的中心超过1um的区域上方，并且在宽度方向上距离山的中心大于1mum。

7. 发明授权

US07579627B2 Nitride semiconductor light-emitting device, method of fabricating it, and semiconductor optical apparatus 有权
标题翻译：氮化物半导体发光元件及其制造方法以及半导体光学装置
公开(公告)号：US07579627B2
公开(公告)日：2009-08-25
申请号：US11435932
申请日：2006-05-18
申请人： Yoshihiro Ueta , Teruyoshi Takakura , Takeshi Kamikawa , Yuhzoh Tsuda , Shigetoshi Ito , Takayuki Yuasa , Mototaka Taneya , Kensaku Motoki
发明人： Yoshihiro Ueta , Teruyoshi Takakura , Takeshi Kamikawa , Yuhzoh Tsuda , Shigetoshi Ito , Takayuki Yuasa , Mototaka Taneya , Kensaku Motoki
IPC分类号： H01L31/12
CPC分类号： B82Y20/00 , H01S5/0207 , H01S5/2201 , H01S5/3202 , H01S5/34333 , H01S2304/12
摘要： A nitride semiconductor laser device has a nitride semiconductor substrate that includes a dislocation-concentrated region 102 and a wide low-dislocation region and that has the top surface thereof slanted at an angle in the range of 0.3° to 0.7° relative to the C plane and a nitride semiconductor layer laid on top thereof. The nitride semiconductor layer has a depression immediately above the dislocation-concentrated region, and has, in a region thereof other than the depression, a high-quality quantum well active layer with good flatness and without cracks, a layer that, as is grown, readily exhibits p-type conductivity, and a stripe-shaped laser light waveguide region. The laser light waveguide region is formed above the low-dislocation region. This helps realize a nitride semiconductor laser device that offers a longer life.
摘要翻译：氮化物半导体激光器件具有氮化物半导体衬底，其包括位错集中区域102和宽低位错区域，并且其顶表面相对于C平面以0.3°至0.7°的范围内的角度倾斜和位于其顶部的氮化物半导体层。氮化物半导体层在位错集中区域正上方具有凹陷，并且在除了凹陷以外的区域中具有良好的平坦度且没有裂纹的高质量的量子阱活性层，易于显示p型导电性，以及条状激光波导区域。激光波导区域形成在低位错区域的上方。这有助于实现提供更长寿命的氮化物半导体激光器件。

8. 发明申请

US20050042787A1 Nitride semiconductor device, its manufacturing method, and semiconductor optical apparatus 有权
标题翻译：氮化物半导体装置及其制造方法以及半导体光学装置
公开(公告)号：US20050042787A1
公开(公告)日：2005-02-24
申请号：US10493137
申请日：2002-10-28
申请人： Shigetoshi Ito , Takayuki Yuasa , Yoshihiro Ueta , Mototaka Taneya , Zenpei Tani , Kensaku Motoki
发明人： Shigetoshi Ito , Takayuki Yuasa , Yoshihiro Ueta , Mototaka Taneya , Zenpei Tani , Kensaku Motoki
IPC分类号： H01L21/20 , H01S5/02 , H01S5/323 , H01L21/00
CPC分类号： H01S5/2018 , H01L21/02389 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01S5/0207 , H01S5/2231 , H01S5/3013 , H01S5/3202 , H01S5/32341 , H01S2301/173
摘要： A nitride semiconductor laser device with a reduction in internal crystal defects and an alleviation in stress, and a semiconductor optical apparatus comprising this nitride semiconductor laser device. First, a growth suppressing film against GaN crystal growth is formed on the surface of an n-type GaN substrate equipped with alternate stripes of dislocation concentrated regions showing a high density of crystal defects and low-dislocation regions so as to coat the dislocation concentrate regions. Next, the n-type GaN substrate coated with the growth suppressing film is overlaid with a nitride semiconductor layer by the epitaxial growth of GaN crystals. Further, the growth suppressing film is removed to adjust the lateral distance between a laser waveguide region and the closest dislocation concentrated region to 40 μm or more.
摘要翻译：一种氮化物半导体激光器件，其具有内部晶体缺陷的减小和应力的缓解，以及包括该氮化物半导体激光器件的半导体光学装置。首先，在配置有显示高密度晶体缺陷和低位错区域的位错集中区域的交替条纹的n型GaN衬底的表面上形成抗GaN晶体生长的生长抑制膜，从而涂覆位错浓缩区域。接下来，通过GaN晶体的外延生长，用生长抑制膜涂覆的n型GaN衬底与氮化物半导体层重叠。此外，除去生长抑制膜以将激光波导区域和最接近的位错集中区域之间的横向距离调整为40μm以上。

9. 发明申请

US20120274673A1 LIGHT EMITTING APPARATUS, METHOD FOR DRIVING THE LIGHT EMITTING APPARATUS, AND DISPLAY APPARATUS INCLUDING THE LIGHT EMITTING APPARATUS 失效
标题翻译：发光装置，用于驱动发光装置的方法，以及包括发光装置的显示装置
公开(公告)号：US20120274673A1
公开(公告)日：2012-11-01
申请号：US13544287
申请日：2012-07-09
申请人： Takeshi KAMIKAWA , Shigetoshi Ito , Mototaka Taneya
发明人： Takeshi KAMIKAWA , Shigetoshi Ito , Mototaka Taneya
IPC分类号： G09G5/10 , H01L33/32 , H01L33/50 , H01L33/06
CPC分类号： H05B33/0866 , G09G3/14 , G09G3/2014 , G09G3/2081 , G09G3/32 , G09G2310/0272 , G09G2320/0626 , G09G2320/0666 , G09G2330/021 , H01L2224/48091 , H01L2224/49107 , H05B33/0818 , H05B33/0821 , H05B33/086 , H01L2924/00014
摘要： A light emitting apparatus comprises a light emitting section for emitting light, a color of the light being changed with a value of a driving current, and a driving section for driving the light emitting section so that the light emitting section emits light having a desired color and a desired intensity, by generating the driving current based on a signal designating the desired color and a signal designating the desired intensity and by applying the driving current to the light emitting section.
摘要翻译：发光装置包括发光部分，用于发光，光的颜色以驱动电流的值改变;驱动部分，用于驱动发光部分，使得发光部分发出具有所需颜色的光并且通过基于指定期望颜色的信号和指定期望强度的信号产生驱动电流并且通过将驱动电流施加到发光部分来产生期望的强度。

10. 发明申请

US20070115210A1 Light emitting apparatus, method for driving the light emitting apparatus, and display apparatus including the light emitting apparatus 有权
公开(公告)号：US20070115210A1
公开(公告)日：2007-05-24
申请号：US11644668
申请日：2006-12-22
申请人： Takeshi Kamikawa , Shigetoshi Ito , Mototaka Taneya
发明人： Takeshi Kamikawa , Shigetoshi Ito , Mototaka Taneya
IPC分类号： G09G3/14
CPC分类号： H05B33/0866 , G09G3/14 , G09G3/2014 , G09G3/2081 , G09G3/32 , G09G2310/0272 , G09G2320/0626 , G09G2320/0666 , G09G2330/021 , H01L2224/48091 , H01L2224/49107 , H05B33/0818 , H05B33/0821 , H05B33/086 , H01L2924/00014
摘要： A light emitting apparatus comprises a light emitting section for emitting light, a color of the light being changed with a value of a driving current, and a driving section for driving the light emitting section so that the light emitting section emits light having a desired color and a desired intensity, by generating the driving current based on a signal designating the desired color and a signal designating the desired intensity and by applying the driving current to the light emitting section.

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