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1. 发明授权

US5361271A Semiconductor laser 失效
标题翻译：半导体激光器
公开(公告)号：US5361271A
公开(公告)日：1994-11-01
申请号：US120277
申请日：1993-09-13
申请人： Haruhisa Takiguchi , Kazuhiko Inoguchi , Hiroaki Kudo , Satoshi Sugahara , Mototaka Taneya
发明人： Haruhisa Takiguchi , Kazuhiko Inoguchi , Hiroaki Kudo , Satoshi Sugahara , Mototaka Taneya
IPC分类号： H01S5/00 , H01S5/20 , H01S5/22 , H01S5/223 , H01S5/323 , H01S3/19
CPC分类号： H01S5/2231 , H01S5/2004 , H01S5/2205 , H01S5/2206 , H01S5/223 , H01S5/2232 , H01S5/32316
摘要： A semiconductor laser of the present invention includes: a semiconductor substrate, a multi-layered structure formed on the semiconductor substrate and a current and light confining section formed on the multi-layered structure, wherein the current and light confining section includes at least two multi-layered current and light confining portions each having a laser beam transmission layer and a laser beam absorption layer formed on the laser beam transmission layer, and at least one stripe groove which spatially separates the at least two current and light confining portions; wherein an equivalent refractive index in the multi-layered current and light confining portions with respect to a laser beam in a fundamental transverse mode is made smaller than that within the stripe groove; wherein the multi-layered structure includes an active layer, and the active layer has a region positioned below the stripe groove of the current and light confining section and regions positioned below a respective one of the multi-layered current and light confining portions; and wherein a optical confinement factor .GAMMA. of the active layer outside the stripe groove with respect to a laser beam in a guide mode is larger than that outside the stripe groove with respect to a laser beam in an anti-guide mode.
摘要翻译：本发明的半导体激光器包括：半导体衬底，形成在半导体衬底上的多层结构和形成在多层结构上的电流和光限制部分，其中电流和光限制部分包括至少两个多重结构 - 每个具有形成在激光束透射层上的激光束透射层和激光束吸收层的电流和光限制部分以及空间上分离至少两个电流和光限制部分的至少一个条纹槽; 其中相对于基本横向模式的激光束的多层电流和光限制部分中的等效折射率小于条纹槽内的折射率; 其中所述多层结构包括有源层，并且所述有源层具有位于所述电流和光限制部分的条纹槽下面的区域和位于所述多层电流和光限制部分中的相应一个之下的区域; 并且其中在导向模式下相对于激光束在条纹槽外部的有源层的光限制因子GAMMA相对于反向导向模式中的激光束大于条纹槽外侧的光限制因子GAMMA。

2. 发明授权

US5292685A Method for producing a distributed feedback semiconductor laser device 失效
标题翻译：分布式反馈半导体激光器件的制造方法
公开(公告)号：US5292685A
公开(公告)日：1994-03-08
申请号：US919665
申请日：1992-07-24
申请人： Kazuhiko Inoguchi , Satoshi Sugahara , Mototaka Taneya , Hiroaki Kudo , Chitose Nakanishi , Haruhisa Takiguchi
发明人： Kazuhiko Inoguchi , Satoshi Sugahara , Mototaka Taneya , Hiroaki Kudo , Chitose Nakanishi , Haruhisa Takiguchi
IPC分类号： H01S5/12 , H01S5/223 , H01L21/203
CPC分类号： H01S5/12 , H01S5/1231 , H01S5/2231
摘要： In a first crystal growth step, a first cladding layer, an active layer, and an optical wave-guide layer are sequentially grown on a semiconductor substrate. A diffraction grating is formed at a surface of the optical waveguide layer. In a second crystal growth step, a current block layer is grown on the optical waveguide layer having the diffraction grating. The current block layer is selectively etched to expose the diffraction grating and thus to form a stripe groove. In a third crystal growth step, a second cladding layer is grown on the diffraction grating inside the stripe groove and on the current block layer.
摘要翻译：在第一晶体生长步骤中，在半导体衬底上依次生长第一包层，有源层和光波导层。衍射光栅形成在光波导层的表面。在第二晶体生长步骤中，在具有衍射光栅的光波导层上生长电流阻挡层。选择性地蚀刻当前阻挡层以暴露衍射光栅，从而形成条纹槽。在第三晶体生长步骤中，第二包覆层生长在条形槽内部和当前阻挡层上的衍射光栅上。

3. 发明授权

US5280493A Quantum wire laser 失效
标题翻译：量子线激光器
公开(公告)号：US5280493A
公开(公告)日：1994-01-18
申请号：US859587
申请日：1992-03-27
申请人： Haruhisa Takiguchi , Hiroaki Kudo , Mototaka Taneya , Satoshi Sugahara
发明人： Haruhisa Takiguchi , Hiroaki Kudo , Mototaka Taneya , Satoshi Sugahara
IPC分类号： H01S5/00 , H01S5/12 , H01S5/20 , H01S5/223 , H01S5/227 , H01S5/34 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/341 , H01S5/1228 , H01S5/2059 , H01S5/2238 , H01S5/2272 , H01S5/343
摘要： A quantum wire laser comprises a first multi-layer structure which is formed on a substrate and includes at least one first quantum well layer sandwiched by barrier layers, a second multi-layer structure which is formed on a laminated cross-section of the first multi-layer structure and is obtained by successively laminating a first barrier layer having a band gap larger than that of the first quantum well layer, a second quantum well layer having a band gap nearly equal to that of the first quantum well layer, and a second barrier layer having a band gap larger than those of the first and second quantum well layers, wherein a region for confining electrons is disposed in at least one of regions in the vicinity of the first quantum well layer and the second quantum well layer.
摘要翻译：量子线激光器包括形成在衬底上并包括被阻挡层夹在中间的至少一个第一量子阱层的第一多层结构，第二多层结构形成在第一多层结构的层叠横截面上通过连续地层叠具有比第一量子阱层的带隙大的带隙的第一势垒层，具有与第一量子阱层的带隙几乎相等的带隙的第二量子阱层而获得的第二势垒层，阻挡层的带隙大于第一和第二量子阱层的阻挡层，其中用于限制电子的区域设置在第一量子阱层和第二量子阱层附近的至少一个区域中。

4. 发明授权

US5654557A Quantum wire structure and a method for producing the same 失效
标题翻译：量子线结构及其制造方法
公开(公告)号：US5654557A
公开(公告)日：1997-08-05
申请号：US249051
申请日：1994-05-25
申请人： Mototaka Taneya , Hiroaki Kudo , Satoshi Sugahara , Haruhisa Takiguchi
发明人： Mototaka Taneya , Hiroaki Kudo , Satoshi Sugahara , Haruhisa Takiguchi
IPC分类号： H01L21/20 , H01L29/06 , H01L29/12 , H01L29/80 , H01L33/06 , H01L33/14 , H01L33/22 , H01L33/30 , H01S5/00 , H01S5/34 , H01L27/12 , H01L45/00
CPC分类号： B82Y20/00 , B82Y10/00 , H01L29/125 , H01S5/341
摘要： A quantum wire structure includes a first layer having a thickness sufficiently smaller than a de Broglie wavelength of an electron wave in a medium, a second layer and a third layer which are disposed on and under the first layer and respectively have a forbidden band width larger than that of the first layer, wherein the first layer has a region with a relatively small curvature and a region with a relatively large curvature in its cross-section, and a width of the region with a relatively small curvature is 50 nm or less.
摘要翻译：量子线结构包括第一层，其厚度足够小于介质中的电子波的德布罗意波长，第二层和第三层，其设置在第一层上和下面，并且分别具有较大的禁带宽度其中第一层具有相对较小曲率的区域和其横截面具有相对较大曲率的区域，并且具有较小曲率的区域的宽度为50nm以下。

5. 发明授权

US5309472A Semiconductor device and a method for producing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US5309472A
公开(公告)日：1994-05-03
申请号：US903785
申请日：1992-06-24
申请人： Hiroaki Kudo , Kazuhiko Inoguchi , Satoshi Sugahara , Haruhisa Takiguchi
发明人： Hiroaki Kudo , Kazuhiko Inoguchi , Satoshi Sugahara , Haruhisa Takiguchi
IPC分类号： H01L33/06 , H01L33/20 , H01S5/026 , H01S5/12 , H01S5/223 , H01S5/32 , H01S5/323 , H01S5/327 , H01S5/34 , H01S5/343 , H01S3/08
CPC分类号： H01L33/06 , B82Y20/00 , H01S5/1228 , H01S5/32 , H01L33/20 , H01S5/026 , H01S5/1231 , H01S5/223 , H01S5/32308 , H01S5/327 , H01S5/341 , H01S5/3412 , H01S5/3428 , H01S5/343 , H01S5/3432
摘要： A semiconductor device includes a multiple layer structure including a substantially flat active layer, and a first semiconductor layer and a second semiconductor layer adjacent to each other, the semiconductor layers having a corrugation at an interface therebetween; and a generating device which is connected to the multiple layer structure. An electromagnetic field intensity distribution is generated by use of the generating device in a waveguide region including the active layer, and the active layer includes a gain distribution having a distribution pattern corresponding to the corrugation. The multiple layer structure is produced by forming the corrugation on an upper surface of the first semiconductor layer, and forming the rest of the multiple layer structure including the second semiconductor layer and the active layer by using a vapor phase growth method once so as to make the active layer substantially flat. Then, the generating device is formed to be in contact with the multiple layer structure.
摘要翻译：半导体器件包括包括基本上平坦的有源层的多层结构，以及彼此相邻的第一半导体层和第二半导体层，所述半导体层在其间的界面处具有波纹状; 以及连接到所述多层结构的生成装置。通过在包括有源层的波导区域中使用发生器件产生电磁场强度分布，并且有源层包括具有对应于波纹的分布图案的增益分布。通过在第一半导体层的上表面上形成波纹并通过使用气相生长法一次形成包括第二半导体层和活性层的多层结构的其余部分来制造多层结构，以使活性层基本上平坦。然后，生成装置形成为与多层结构接触。

6. 发明授权

US5303255A Distributed feedback semiconductor laser device and a method of producing the same 失效
标题翻译：分布式反馈半导体激光器件及其制造方法
公开(公告)号：US5303255A
公开(公告)日：1994-04-12
申请号：US85129
申请日：1993-06-29
申请人： Hiroaki Kudo , Haruhisa Takiguchi , Kazuhiko Inoguchi , Chitose Nakanishi , Satoshi Sugahara
发明人： Hiroaki Kudo , Haruhisa Takiguchi , Kazuhiko Inoguchi , Chitose Nakanishi , Satoshi Sugahara
IPC分类号： H01S5/12 , H01S5/20 , H01S5/223 , H01S3/08 , H01S3/19
CPC分类号： H01S5/12 , H01S5/1228 , H01S5/20 , H01S5/2231
摘要： A distributed feedback semiconductor laser device comprising a current blocking structure having a stripe groove, and a diffraction grating formed in the bottom of the stripe groove. The current blocking structure is formed over an active layer for laser oscillation, and it includes an etch stop layer against a groove etching in a lower potion of the current blocking structure. The refractive index distribution in transverse directions inside the stripe groove is controlled by the thickness of the optical guiding layer, enabling oscillation of the fundamental transverse mode.
摘要翻译：一种分布式反馈半导体激光器件，包括具有条纹槽的电流阻挡结构和形成在条纹槽底部的衍射光栅。电流阻挡结构形成在用于激光振荡的有源层上，并且其包括抵抗电流阻挡结构的较低部分中的凹槽蚀刻的蚀刻停止层。条形槽内的横向折射率分布由导光层的厚度控制，使得能够摆动基本横模。

7. 发明授权

US5070510A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US5070510A
公开(公告)日：1991-12-03
申请号：US625169
申请日：1990-12-10
申请人： Fumihiro Konushi , Hiroshi Nakatu , Kazuhiko Inoguchi , Toshiyuki Okumura , Akinori Seki , Haruhisa Takiguchi , Chitose Nakanishi , Satoshi Sugahara , Hiroaki Kudo
发明人： Fumihiro Konushi , Hiroshi Nakatu , Kazuhiko Inoguchi , Toshiyuki Okumura , Akinori Seki , Haruhisa Takiguchi , Chitose Nakanishi , Satoshi Sugahara , Hiroaki Kudo
IPC分类号： H01L21/20 , H01L33/00 , H01S5/12 , H01S5/20 , H01S5/22 , H01S5/227 , H01S5/323 , H01S5/40
CPC分类号： H01S5/227 , H01L21/02392 , H01L21/02395 , H01L21/02461 , H01L21/02463 , H01L21/02543 , H01L21/02546 , H01L21/0262 , H01L21/02639 , H01L33/0062 , H01S5/20 , H01S5/4031 , H01S5/12 , H01S5/1228 , H01S5/2059 , H01S5/2201 , H01S5/2213 , H01S5/2272 , H01S5/2275 , H01S5/32391 , H01S5/4037
摘要： A semiconductor laser device having a mesa stripe whose side faces are facets of {111} planes is disclosed. In the laser device, a current blocking layer is formed on a semiconductor substrate whose main surface is a (100) plane, and a channel which is oriented along the direction is formed in the current blocking layer. The mesa stripe is formed on the substrate within the channel by a selective growth technique. The mesa stripe has a multilayer structure including an active layer and is covered by a burying layer.

8. 发明授权

US5345460A Semiconductor laser device with window regions 失效
标题翻译：具有窗口区域的半导体激光器件
公开(公告)号：US5345460A
公开(公告)日：1994-09-06
申请号：US939901
申请日：1992-09-04
申请人： Haruhisa Takiguchi , Seiki Yano , Kazuhiko Inoguchi , Hiroaki Kudo , Chitose Nakanishi , Toshiyuki Okumura , Satoshi Sugahara
发明人： Haruhisa Takiguchi , Seiki Yano , Kazuhiko Inoguchi , Hiroaki Kudo , Chitose Nakanishi , Toshiyuki Okumura , Satoshi Sugahara
IPC分类号： H01S5/00 , H01S5/16 , H01S5/20 , H01S3/18 , H01S3/08
CPC分类号： H01S5/164 , H01S5/2004
摘要： A semiconductor laser device with window regions according to the present invention is provided, in which a double hetero structure including cladding layers and an active layer sandwiched by the cladding layers is formed on a semiconductor substrate, the double hetero structure is buried in burying layers with a bandgap larger than that of the active layer, and the burying layers form window regions situated at both end facets of the double hetero structure, wherein the window regions have a waveguide structure including a plurality of semiconductor layers with different bandgaps.
摘要翻译：提供了根据本发明的具有窗口区域的半导体激光器件，其中在半导体衬底上形成包括包层和被包覆层夹持的有源层的双异质结构，将该双异质结构埋在具有具有比有源层大的带隙，并且掩埋层形成位于双异质结构的两端面处的窗口区域，其中窗口区域具有包括具有不同带隙的多个半导体层的波导结构。

9. 发明授权

US4872174A Semiconductor laser device having a grating structure 失效
标题翻译：具有光栅结构的半导体激光器件
公开(公告)号：US4872174A
公开(公告)日：1989-10-03
申请号：US239301
申请日：1988-09-01
申请人： Sadayoshi Matsui , Mototaka Taneya , Mitsuhiro Matsumoto , Hiroyuki Hosoba , Haruhisa Takiguchi , Hiroaki Kudo
发明人： Sadayoshi Matsui , Mototaka Taneya , Mitsuhiro Matsumoto , Hiroyuki Hosoba , Haruhisa Takiguchi , Hiroaki Kudo
IPC分类号： H01S5/00 , H01S5/12 , H01S5/125 , H01S5/20 , H01S5/223 , H01S5/323 , H01S5/40
CPC分类号： H01S5/20 , H01S5/125 , H01S5/2232 , H01S5/12 , H01S5/32316 , H01S5/4031
摘要： A semiconductor laser device comprises a laminated crystal structure which includes a Ga.sub.1-y Al.sub.y As optical guiding layer and a Ga.sub.1-z Al.sub.z As (z>y) cladding layer in this sequence, the cladding layer is formed on both a Ga.sub.1-x Al.sub.2 As (0.ltoreq.x.ltoreq.0.1 and x
摘要翻译：半导体激光器件包括依次包括Ga1-yAlyAs光导层和Ga1-zAlzAs（z> y）包覆层的层压晶体结构，在Ga 1-x Al 2 As（z） x <= 0.1和x

10. 发明授权

US4975922A Multi-layered dielectric film 失效
标题翻译：多层电介质膜
公开(公告)号：US4975922A
公开(公告)日：1990-12-04
申请号：US368274
申请日：1989-06-19
申请人： Chitose Sakane , Haruhisa Takiguchi , Hiroaki Kudo , Satoshi Sugahara
发明人： Chitose Sakane , Haruhisa Takiguchi , Hiroaki Kudo , Satoshi Sugahara
IPC分类号： G02B1/10 , G02B1/11 , H01L31/04 , H01L33/10 , H01L33/26 , H01L33/44 , H01S5/00 , H01S5/028
CPC分类号： G02B1/10 , H01S5/028 , H01S5/0281
摘要： A multi-layered dielectric film that is coated on the end surfaces or other surfaces of optical products, wherein said multi-layered dielectric film is composed of alternate layers consisting of two kinds of dielectric layer, one of which is a first dielectric layer of TiO.sub.2 or ZnS with a high refractive index n.sub.1 and the other of which is a second dielectric layer of Al.sub.2 O.sub.3 with a low refractive index n.sub.2.

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