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1. 发明授权

US5880028A Ridge waveguide type distributed feedback semiconductor laser device and method for manufacturing the same 失效
标题翻译：脊波导型分布反馈半导体激光器件及其制造方法
公开(公告)号：US5880028A
公开(公告)日：1999-03-09
申请号：US700555
申请日：1996-08-07
申请人： Kei Yamamoto , Takuma Hiramatsu , Koji Takahashi , Mototaka Taneya
发明人： Kei Yamamoto , Takuma Hiramatsu , Koji Takahashi , Mototaka Taneya
IPC分类号： H01S5/00 , H01S5/12 , H01S5/22 , H01L21/302
CPC分类号： H01S5/12 , H01S5/22
摘要： A ridge waveguide type distributed feedback semiconductor laser device includes a diffraction grating formed on a surface of a semiconductor wafer, a semiconductor layer formed on the diffraction grating, the semiconductor layer serving to alleviate the irregularity of the diffraction grating, and a stripe-like ridge having a cladding layer and a contact layer formed on the semiconductor layer. Also, a method for manufacturing the ridge waveguide type distributed feedback semiconductor laser device is disclosed.
摘要翻译：脊波导型分布反馈半导体激光器件包括形成在半导体晶片的表面上的衍射光栅，形成在衍射光栅上的半导体层，用于减轻衍射光栅的不规则性的半导体层和条状脊具有在半导体层上形成的覆层和接触层。此外，公开了一种用于制造脊波导型分布反馈半导体激光器件的方法。

2. 发明授权

US5727015A Distributed feedback semiconductor laser 失效
标题翻译：分布式反馈半导体激光器
公开(公告)号：US5727015A
公开(公告)日：1998-03-10
申请号：US611792
申请日：1996-03-06
申请人： Koji Takahashi , Fumihiro Kounushi , Mototaka Taneya
发明人： Koji Takahashi , Fumihiro Kounushi , Mototaka Taneya
IPC分类号： H01S5/00 , H01S5/12 , H01S3/1055
CPC分类号： H01S5/1228
摘要： A gain coupled distributed feedback semiconductor laser includes an active layer and a diffraction grating provided in the vicinity of the active layer and having a plurality of light absorption layers periodically arranged along a resonator length direction. The order of the diffraction grating is one, a duty of the diffraction grating is in the range of about 0.4 to about 0.8, and a thickness of the light absorption layer is in the range of about 6 nm to about 30 nm.
摘要翻译：增益耦合分布反馈半导体激光器包括设置在有源层附近的有源层和衍射光栅，并具有沿着谐振器长度方向周期性排列的多个光吸收层。衍射光栅的顺序是一个，衍射光栅的占空比在约0.4至约0.8的范围内，并且光吸收层的厚度在约6nm至约30nm的范围内。

3. 发明授权

US08547814B2 Semiconductor laser device, optical pickup apparatus, and method of manufacturing semiconductor laser device 有权
标题翻译：半导体激光装置，光学拾取装置以及半导体激光装置的制造方法
公开(公告)号：US08547814B2
公开(公告)日：2013-10-01
申请号：US13228222
申请日：2011-09-08
申请人： Shinzoh Murakami , Mototaka Taneya , Takahide Ishiguro , Katsushige Masui , Satoru Fukumoto , Takeshi Horiguchi
发明人： Shinzoh Murakami , Mototaka Taneya , Takahide Ishiguro , Katsushige Masui , Satoru Fukumoto , Takeshi Horiguchi
IPC分类号： G11B7/00
CPC分类号： G11B7/1353 , G11B7/1275
摘要： In a diffractive element, its grating pattern is so configured that a diffraction angle of a diffracted light beam of a light source that is subject to the first-order diffraction in a diffraction area is matched with an angle of a light beam passing through the diffractive area emitted from a light source and a light source position is matched with a light originating point of the light source that emits a light beam to be transmitted, and the center of light intensity distribution is matched with that of the light source passing through the diffractive element by inclining an optical axis of the light source. A position of the diffractive element is adjusted based on an electric current value generated when a reflected return path light beam of the light source is diffracted by the diffractive element and enters the light source.
摘要翻译：在衍射元件中，其光栅图案被配置为使得衍射区域中经受一次衍射的光源的衍射光束的衍射角与通过衍射的光束的角度相匹配从光源和光源位置发射的区域与发射要透射的光束的光源的发光点相匹配，并且光强度分布的中心与通过衍射的光源的光中心匹配元件通过倾斜光源的光轴。基于当光源的反射返回路径光束被衍射元件衍射并进入光源时产生的电流值来调节衍射元件的位置。

4. 发明申请

US20110175549A1 LINEAR LIGHT SOURCE AND ELECTRONIC APPARATUS 有权
标题翻译：线性光源和电子设备
公开(公告)号：US20110175549A1
公开(公告)日：2011-07-21
申请号：US13119391
申请日：2009-09-01
申请人： Yohhei Yoshida , Mototaka Taneya , Jun Okazaki , Tomotake Tanaka , Takuya Shigenobu
发明人： Yohhei Yoshida , Mototaka Taneya , Jun Okazaki , Tomotake Tanaka , Takuya Shigenobu
IPC分类号： H05B37/02 , F21V21/00 , F21S4/00
CPC分类号： G09F13/18 , G02B6/0003 , G02B6/001
摘要： A linear light source (20), which emits light by causing light to propagate in a linear material (11) in which incoming light can be propagated, includes: a light emitting device (12), provided on a side of one end of the linear material (11), which emits light so that the light enters the one end of the linear material (11); and a light receiving device (21), provided on a side of the other end of the linear material (11), which detects the light which has propagated in the linear material (11). With the configuration, it is possible to provide: a linear light source in which an abnormal condition, such as breaking of a linear material, can be detected; and an electronic apparatus including the linear light source.
摘要翻译：一种线性光源（20），其通过使光在能够传播入射光的线性材料（11）中传播而发光，包括：发光器件（12），其设置在所述发光器件的一端的一侧线性材料（11），其发光，使得光进入线材（11）的一端; 以及设置在所述线状材料（11）的另一端的一侧的光接收装置（21），其检测在所述线状材料（11）中传播的光。利用该结构，可以提供：能够检测出线状材料断裂等异常情况的线状光源; 以及包括线性光源的电子设备。

5. 发明授权

US07579627B2 Nitride semiconductor light-emitting device, method of fabricating it, and semiconductor optical apparatus 有权
标题翻译：氮化物半导体发光元件及其制造方法以及半导体光学装置
公开(公告)号：US07579627B2
公开(公告)日：2009-08-25
申请号：US11435932
申请日：2006-05-18
申请人： Yoshihiro Ueta , Teruyoshi Takakura , Takeshi Kamikawa , Yuhzoh Tsuda , Shigetoshi Ito , Takayuki Yuasa , Mototaka Taneya , Kensaku Motoki
发明人： Yoshihiro Ueta , Teruyoshi Takakura , Takeshi Kamikawa , Yuhzoh Tsuda , Shigetoshi Ito , Takayuki Yuasa , Mototaka Taneya , Kensaku Motoki
IPC分类号： H01L31/12
CPC分类号： B82Y20/00 , H01S5/0207 , H01S5/2201 , H01S5/3202 , H01S5/34333 , H01S2304/12
摘要： A nitride semiconductor laser device has a nitride semiconductor substrate that includes a dislocation-concentrated region 102 and a wide low-dislocation region and that has the top surface thereof slanted at an angle in the range of 0.3° to 0.7° relative to the C plane and a nitride semiconductor layer laid on top thereof. The nitride semiconductor layer has a depression immediately above the dislocation-concentrated region, and has, in a region thereof other than the depression, a high-quality quantum well active layer with good flatness and without cracks, a layer that, as is grown, readily exhibits p-type conductivity, and a stripe-shaped laser light waveguide region. The laser light waveguide region is formed above the low-dislocation region. This helps realize a nitride semiconductor laser device that offers a longer life.
摘要翻译：氮化物半导体激光器件具有氮化物半导体衬底，其包括位错集中区域102和宽低位错区域，并且其顶表面相对于C平面以0.3°至0.7°的范围内的角度倾斜和位于其顶部的氮化物半导体层。氮化物半导体层在位错集中区域正上方具有凹陷，并且在除了凹陷以外的区域中具有良好的平坦度且没有裂纹的高质量的量子阱活性层，易于显示p型导电性，以及条状激光波导区域。激光波导区域形成在低位错区域的上方。这有助于实现提供更长寿命的氮化物半导体激光器件。

6. 发明申请

US20090011530A1 NITRIDE-COMPOSITE SEMICONDUCTOR LASER ELEMENT, ITS MANUFACTURING METHOD, AND SEMICONDUCTOR OPTICAL DEVICE 有权
标题翻译：氮化物复合半导体激光元件及其制造方法和半导体光学器件
公开(公告)号：US20090011530A1
公开(公告)日：2009-01-08
申请号：US12211577
申请日：2008-09-16
申请人： Shigetoshi ITO , Takayuki Yuasa , Yoshihiro Ueta , Mototaka Taneya , Zenpei Tani , Kensaku Motoki
发明人： Shigetoshi ITO , Takayuki Yuasa , Yoshihiro Ueta , Mototaka Taneya , Zenpei Tani , Kensaku Motoki
IPC分类号： H01L33/00
CPC分类号： H01S5/2018 , H01L21/02389 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01S5/0207 , H01S5/2231 , H01S5/3013 , H01S5/3202 , H01S5/32341 , H01S2301/173
摘要： A nitride semiconductor laser device with a reduction in internal crystal defects and an alleviation in stress, and a semiconductor optical apparatus comprising this nitride semiconductor laser device. First, a growth suppressing film against GaN crystal growth is formed on the surface of an n-type GaN substrate equipped with alternate stripes of dislocation concentrated regions showing a high density of crystal defects and low-dislocation regions so as to coat the dislocation concentrate regions. Next, the n-type GaN substrate coated with the growth suppressing film is overlaid with a nitride semiconductor layer by the epitaxial growth of GaN crystals. Further, the growth suppressing film is removed to adjust the lateral distance between a laser waveguide region and the closest dislocation concentrated region to 40 μm or more.
摘要翻译：一种氮化物半导体激光器件，其具有内部晶体缺陷的减小和应力的缓解，以及包括该氮化物半导体激光器件的半导体光学装置。首先，在配置有显示高密度晶体缺陷和低位错区域的位错集中区域的交替条纹的n型GaN衬底的表面上形成抗GaN晶体生长的生长抑制膜，从而涂覆位错浓缩区域。接下来，通过GaN晶体的外延生长，用生长抑制膜涂覆的n型GaN衬底与氮化物半导体层重叠。此外，除去生长抑制膜以将激光波导区域和最接近的位错集中区域之间的横向距离调整为40μm以上。

7. 发明申请

US20050042787A1 Nitride semiconductor device, its manufacturing method, and semiconductor optical apparatus 有权
标题翻译：氮化物半导体装置及其制造方法以及半导体光学装置
公开(公告)号：US20050042787A1
公开(公告)日：2005-02-24
申请号：US10493137
申请日：2002-10-28
申请人： Shigetoshi Ito , Takayuki Yuasa , Yoshihiro Ueta , Mototaka Taneya , Zenpei Tani , Kensaku Motoki
发明人： Shigetoshi Ito , Takayuki Yuasa , Yoshihiro Ueta , Mototaka Taneya , Zenpei Tani , Kensaku Motoki
IPC分类号： H01L21/20 , H01S5/02 , H01S5/323 , H01L21/00
CPC分类号： H01S5/2018 , H01L21/02389 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01S5/0207 , H01S5/2231 , H01S5/3013 , H01S5/3202 , H01S5/32341 , H01S2301/173
摘要： A nitride semiconductor laser device with a reduction in internal crystal defects and an alleviation in stress, and a semiconductor optical apparatus comprising this nitride semiconductor laser device. First, a growth suppressing film against GaN crystal growth is formed on the surface of an n-type GaN substrate equipped with alternate stripes of dislocation concentrated regions showing a high density of crystal defects and low-dislocation regions so as to coat the dislocation concentrate regions. Next, the n-type GaN substrate coated with the growth suppressing film is overlaid with a nitride semiconductor layer by the epitaxial growth of GaN crystals. Further, the growth suppressing film is removed to adjust the lateral distance between a laser waveguide region and the closest dislocation concentrated region to 40 μm or more.
摘要翻译：一种氮化物半导体激光器件，其具有内部晶体缺陷的减小和应力的缓解，以及包括该氮化物半导体激光器件的半导体光学装置。首先，在配置有显示高密度晶体缺陷和低位错区域的位错集中区域的交替条纹的n型GaN衬底的表面上形成抗GaN晶体生长的生长抑制膜，从而涂覆位错浓缩区域。接下来，通过GaN晶体的外延生长，用生长抑制膜涂覆的n型GaN衬底与氮化物半导体层重叠。此外，除去生长抑制膜以将激光波导区域和最接近的位错集中区域之间的横向距离调整为40μm以上。

8. 发明授权

US06586777B1 Nitride semiconductor light emitting device 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：US06586777B1
公开(公告)日：2003-07-01
申请号：US09641876
申请日：2000-08-18
申请人： Takayuki Yuasa , Atsushi Ogawa , Masahiro Araki , Yoshihiro Ueta , Yuhzoh Tsuda , Mototaka Taneya
发明人： Takayuki Yuasa , Atsushi Ogawa , Masahiro Araki , Yoshihiro Ueta , Yuhzoh Tsuda , Mototaka Taneya
IPC分类号： H01L3300
CPC分类号： H01L33/325 , B82Y20/00 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L33/007 , H01L33/32 , H01S5/0213 , H01S5/0218 , H01S5/305 , H01S5/34333 , H01S2304/00
摘要： The present nitride semiconductor light emitting device includes a nitride semiconductor thick film substrate and a light emitting layered structure including a plurality of nitride semiconductor layers stacked on the substrate. The nitride semiconductor substrate includes at least two layer regions including a first layer region of a high impurity concentration and a second layer region of an impurity concentration lower than the first layer region. The light emitting layered structure is formed on the first layer region of the substrate.
摘要翻译：本发明的氮化物半导体发光器件包括氮化物半导体厚膜衬底和包括堆叠在衬底上的多个氮化物半导体层的发光层状结构。氮化物半导体衬底包括至少两层包括高杂质浓度的第一层区域和杂质浓度低于第一层区域的第二层区域的层区域。发光层状结构形成在基板的第一层区域上。

9. 发明授权

US5838854A Integrated optical control element and a method for fabricating the same and optical integrated circuit element and optical integrated circuit device using the same 失效
公开(公告)号：US5838854A
公开(公告)日：1998-11-17
申请号：US955161
申请日：1997-10-21
申请人： Mototaka Taneya , Fumihiro Konushi , Hidenori Kawanishi , Tatsuya Morioka , Atsushi Shimonaka
发明人： Mototaka Taneya , Fumihiro Konushi , Hidenori Kawanishi , Tatsuya Morioka , Atsushi Shimonaka
IPC分类号： G02B6/122 , G02B6/12 , G02B6/125 , G02B6/13 , G02B6/34 , G02B6/42 , G02F2/00 , H01L27/15 , H01S5/00 , H01S5/026 , H01S5/042 , H01S5/12 , H01S5/22 , H01S5/223 , H01S5/323 , H01S5/40 , H01S5/50 , G02B1/295 , G02B6/26
CPC分类号： G02B6/4246 , G02B6/12004 , G02B6/12007 , G02B6/125 , G02B6/42 , H01S5/026 , G02B2006/12104 , G02B6/29361 , H01S5/0262 , H01S5/12 , H01S5/22 , H01S5/223 , H01S5/32316 , H01S5/4031 , H01S5/4056 , H01S5/50
摘要： The integrated optical control element of this invention includes: a first waveguide for allowing light incident from outside to propagate therein; a multilayer structure for allowing the light which has propagated in the first waveguide to be incident thereon and for transmitting the light therethrough or reflecting the light therefrom, the multilayer structure including at least one layer having a refractive index different from an equivalent refractive index of a region with which the at least one layer is in contact; and a second waveguide for receiving at least part of the light transmitted through or reflected from the multilayer structure.

10. 发明授权

US5548434A Spatial light transmission apparatus 失效
标题翻译：空间光传输装置
公开(公告)号：US5548434A
公开(公告)日：1996-08-20
申请号：US351224
申请日：1994-11-30
申请人： Atsushi Shimonaka , Mototaka Taneya , Hidenori Kawanishi , Tatsuya Morioka
发明人： Atsushi Shimonaka , Mototaka Taneya , Hidenori Kawanishi , Tatsuya Morioka
IPC分类号： H04B10/112 , H04B10/00
CPC分类号： H04B10/1125
摘要： A spatial coherent light transmission apparatus according to the present invention, includes: a light transmitter for emitting a data signal as first coherent light; a light receiver for emitting second coherent light having a wavelength little different from that of The first coherent light, mixing and receiving the first and second coherent lights, and performing a coherent detection of the data signal. At least one of the light transmitter and the light receiver has a detection device for detecting at least one of a coherent light transmission state and a coherent light detection state. The apparatus further includes a control device for controlling at least one of the light transmitter and the light receiver based on information of the state detected by the detection device.
摘要翻译：根据本发明的空间相干光传输装置包括：光发射器，用于发射数据信号作为第一相干光; 用于发射具有与第一相干光的波长略微不同的波长的第二相干光的光接收器，混合和接收第一和第二相干光，以及执行数据信号的相干检测。光发射器和光接收器中的至少一个具有用于检测相干光透射状态和相干光检测状态中的至少一个的检测装置。该装置还包括控制装置，用于根据由检测装置检测到的状态的信息来控制光发射器和光接收器中的至少一个。

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