专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5361271A Semiconductor laser 失效
标题翻译：半导体激光器
公开(公告)号：US5361271A
公开(公告)日：1994-11-01
申请号：US120277
申请日：1993-09-13
申请人： Haruhisa Takiguchi , Kazuhiko Inoguchi , Hiroaki Kudo , Satoshi Sugahara , Mototaka Taneya
发明人： Haruhisa Takiguchi , Kazuhiko Inoguchi , Hiroaki Kudo , Satoshi Sugahara , Mototaka Taneya
IPC分类号： H01S5/00 , H01S5/20 , H01S5/22 , H01S5/223 , H01S5/323 , H01S3/19
CPC分类号： H01S5/2231 , H01S5/2004 , H01S5/2205 , H01S5/2206 , H01S5/223 , H01S5/2232 , H01S5/32316
摘要： A semiconductor laser of the present invention includes: a semiconductor substrate, a multi-layered structure formed on the semiconductor substrate and a current and light confining section formed on the multi-layered structure, wherein the current and light confining section includes at least two multi-layered current and light confining portions each having a laser beam transmission layer and a laser beam absorption layer formed on the laser beam transmission layer, and at least one stripe groove which spatially separates the at least two current and light confining portions; wherein an equivalent refractive index in the multi-layered current and light confining portions with respect to a laser beam in a fundamental transverse mode is made smaller than that within the stripe groove; wherein the multi-layered structure includes an active layer, and the active layer has a region positioned below the stripe groove of the current and light confining section and regions positioned below a respective one of the multi-layered current and light confining portions; and wherein a optical confinement factor .GAMMA. of the active layer outside the stripe groove with respect to a laser beam in a guide mode is larger than that outside the stripe groove with respect to a laser beam in an anti-guide mode.
摘要翻译：本发明的半导体激光器包括：半导体衬底，形成在半导体衬底上的多层结构和形成在多层结构上的电流和光限制部分，其中电流和光限制部分包括至少两个多重结构 - 每个具有形成在激光束透射层上的激光束透射层和激光束吸收层的电流和光限制部分以及空间上分离至少两个电流和光限制部分的至少一个条纹槽; 其中相对于基本横向模式的激光束的多层电流和光限制部分中的等效折射率小于条纹槽内的折射率; 其中所述多层结构包括有源层，并且所述有源层具有位于所述电流和光限制部分的条纹槽下面的区域和位于所述多层电流和光限制部分中的相应一个之下的区域; 并且其中在导向模式下相对于激光束在条纹槽外部的有源层的光限制因子GAMMA相对于反向导向模式中的激光束大于条纹槽外侧的光限制因子GAMMA。

2. 发明授权

US5292685A Method for producing a distributed feedback semiconductor laser device 失效
标题翻译：分布式反馈半导体激光器件的制造方法
公开(公告)号：US5292685A
公开(公告)日：1994-03-08
申请号：US919665
申请日：1992-07-24
申请人： Kazuhiko Inoguchi , Satoshi Sugahara , Mototaka Taneya , Hiroaki Kudo , Chitose Nakanishi , Haruhisa Takiguchi
发明人： Kazuhiko Inoguchi , Satoshi Sugahara , Mototaka Taneya , Hiroaki Kudo , Chitose Nakanishi , Haruhisa Takiguchi
IPC分类号： H01S5/12 , H01S5/223 , H01L21/203
CPC分类号： H01S5/12 , H01S5/1231 , H01S5/2231
摘要： In a first crystal growth step, a first cladding layer, an active layer, and an optical wave-guide layer are sequentially grown on a semiconductor substrate. A diffraction grating is formed at a surface of the optical waveguide layer. In a second crystal growth step, a current block layer is grown on the optical waveguide layer having the diffraction grating. The current block layer is selectively etched to expose the diffraction grating and thus to form a stripe groove. In a third crystal growth step, a second cladding layer is grown on the diffraction grating inside the stripe groove and on the current block layer.
摘要翻译：在第一晶体生长步骤中，在半导体衬底上依次生长第一包层，有源层和光波导层。衍射光栅形成在光波导层的表面。在第二晶体生长步骤中，在具有衍射光栅的光波导层上生长电流阻挡层。选择性地蚀刻当前阻挡层以暴露衍射光栅，从而形成条纹槽。在第三晶体生长步骤中，第二包覆层生长在条形槽内部和当前阻挡层上的衍射光栅上。

3. 发明授权

US5280493A Quantum wire laser 失效
标题翻译：量子线激光器
公开(公告)号：US5280493A
公开(公告)日：1994-01-18
申请号：US859587
申请日：1992-03-27
申请人： Haruhisa Takiguchi , Hiroaki Kudo , Mototaka Taneya , Satoshi Sugahara
发明人： Haruhisa Takiguchi , Hiroaki Kudo , Mototaka Taneya , Satoshi Sugahara
IPC分类号： H01S5/00 , H01S5/12 , H01S5/20 , H01S5/223 , H01S5/227 , H01S5/34 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/341 , H01S5/1228 , H01S5/2059 , H01S5/2238 , H01S5/2272 , H01S5/343
摘要： A quantum wire laser comprises a first multi-layer structure which is formed on a substrate and includes at least one first quantum well layer sandwiched by barrier layers, a second multi-layer structure which is formed on a laminated cross-section of the first multi-layer structure and is obtained by successively laminating a first barrier layer having a band gap larger than that of the first quantum well layer, a second quantum well layer having a band gap nearly equal to that of the first quantum well layer, and a second barrier layer having a band gap larger than those of the first and second quantum well layers, wherein a region for confining electrons is disposed in at least one of regions in the vicinity of the first quantum well layer and the second quantum well layer.
摘要翻译：量子线激光器包括形成在衬底上并包括被阻挡层夹在中间的至少一个第一量子阱层的第一多层结构，第二多层结构形成在第一多层结构的层叠横截面上通过连续地层叠具有比第一量子阱层的带隙大的带隙的第一势垒层，具有与第一量子阱层的带隙几乎相等的带隙的第二量子阱层而获得的第二势垒层，阻挡层的带隙大于第一和第二量子阱层的阻挡层，其中用于限制电子的区域设置在第一量子阱层和第二量子阱层附近的至少一个区域中。

4. 发明授权

US5654557A Quantum wire structure and a method for producing the same 失效
标题翻译：量子线结构及其制造方法
公开(公告)号：US5654557A
公开(公告)日：1997-08-05
申请号：US249051
申请日：1994-05-25
申请人： Mototaka Taneya , Hiroaki Kudo , Satoshi Sugahara , Haruhisa Takiguchi
发明人： Mototaka Taneya , Hiroaki Kudo , Satoshi Sugahara , Haruhisa Takiguchi
IPC分类号： H01L21/20 , H01L29/06 , H01L29/12 , H01L29/80 , H01L33/06 , H01L33/14 , H01L33/22 , H01L33/30 , H01S5/00 , H01S5/34 , H01L27/12 , H01L45/00
CPC分类号： B82Y20/00 , B82Y10/00 , H01L29/125 , H01S5/341
摘要： A quantum wire structure includes a first layer having a thickness sufficiently smaller than a de Broglie wavelength of an electron wave in a medium, a second layer and a third layer which are disposed on and under the first layer and respectively have a forbidden band width larger than that of the first layer, wherein the first layer has a region with a relatively small curvature and a region with a relatively large curvature in its cross-section, and a width of the region with a relatively small curvature is 50 nm or less.
摘要翻译：量子线结构包括第一层，其厚度足够小于介质中的电子波的德布罗意波长，第二层和第三层，其设置在第一层上和下面，并且分别具有较大的禁带宽度其中第一层具有相对较小曲率的区域和其横截面具有相对较大曲率的区域，并且具有较小曲率的区域的宽度为50nm以下。

5. 发明授权

US4872174A Semiconductor laser device having a grating structure 失效
标题翻译：具有光栅结构的半导体激光器件
公开(公告)号：US4872174A
公开(公告)日：1989-10-03
申请号：US239301
申请日：1988-09-01
申请人： Sadayoshi Matsui , Mototaka Taneya , Mitsuhiro Matsumoto , Hiroyuki Hosoba , Haruhisa Takiguchi , Hiroaki Kudo
发明人： Sadayoshi Matsui , Mototaka Taneya , Mitsuhiro Matsumoto , Hiroyuki Hosoba , Haruhisa Takiguchi , Hiroaki Kudo
IPC分类号： H01S5/00 , H01S5/12 , H01S5/125 , H01S5/20 , H01S5/223 , H01S5/323 , H01S5/40
CPC分类号： H01S5/20 , H01S5/125 , H01S5/2232 , H01S5/12 , H01S5/32316 , H01S5/4031
摘要： A semiconductor laser device comprises a laminated crystal structure which includes a Ga.sub.1-y Al.sub.y As optical guiding layer and a Ga.sub.1-z Al.sub.z As (z>y) cladding layer in this sequence, the cladding layer is formed on both a Ga.sub.1-x Al.sub.2 As (0.ltoreq.x.ltoreq.0.1 and x
摘要翻译：半导体激光器件包括依次包括Ga1-yAlyAs光导层和Ga1-zAlzAs（z> y）包覆层的层压晶体结构，在Ga 1-x Al 2 As（z） x <= 0.1和x

6. 发明授权

US4679200A Semiconductor laser 失效
标题翻译：半导体激光器
公开(公告)号：US4679200A
公开(公告)日：1987-07-07
申请号：US691917
申请日：1985-01-16
申请人： Sadayoshi Matsui , Mototaka Taneya , Haruhisa Takiguchi , Shinji Kaneiwa
发明人： Sadayoshi Matsui , Mototaka Taneya , Haruhisa Takiguchi , Shinji Kaneiwa
IPC分类号： H01S5/00 , H01S5/10 , H01S5/223 , H01S3/19
CPC分类号： H01S5/10 , H01S5/2232 , H01S2301/18 , H01S2301/185 , H01S5/2234
摘要： A semiconductor laser includes a current blocking layer formed on a substrate, a first cladding layer formed on the current blocking layer, an active layer formed on the first cladding layer, and a second cladding layer formed on the active layer. An indent is formed in the current blocking layer near the center of the laser element, and a V-shaped groove is formed in the current blocking layer across the indent. A gain guide structure is formed where the indent is formed, and an index guide structure is formed near the cleaved facet. A stable transverse mode laser emission is ensured without the influence of the return beam reflected from the disc surface, and the attendant mode competition noise is reduced.
摘要翻译：半导体激光器包括形成在基板上的电流阻挡层，形成在电流阻挡层上的第一覆盖层，形成在第一覆盖层上的有源层和形成在有源层上的第二覆层。在激光元件的中心附近的电流阻挡层中形成凹口，并且在电流阻挡层中形成跨越凹口的V形槽。在形成凹口的地方形成增益引导结构，并且在切割面附近形成引导引导结构。确保稳定的横模式激光发射，而不受来自盘表面反射的返回光束的影响，并且伴随模式的竞争噪声降低。

7. 发明授权

US4658403A Optical element in semiconductor laser device having a diffraction grating and improved resonance characteristics 失效
$Optical element in semiconductor laser device having a diffraction grating and improved resonance characteristics$
标题翻译：具有衍射光栅和改善的谐振特性的半导体激光器件中的光学元件
公开(公告)号：US4658403A
公开(公告)日：1987-04-14
申请号：US666979
申请日：1984-10-31
申请人： Haruhisa Takiguchi , Shinji Kaneiwa , Sadayoshi Matsui , Mototaka Taneya
发明人： Haruhisa Takiguchi , Shinji Kaneiwa , Sadayoshi Matsui , Mototaka Taneya
IPC分类号： H01S5/00 , H01S3/067 , H01S5/10 , H01S5/12 , H01S5/227 , H01S3/19
CPC分类号： H01S3/0675 , H01S5/10 , H01S5/12 , H01S5/1032 , H01S5/227 , H01S5/2275
摘要： The disclosure is directed to an improved semiconductor laser device which includes a first light deriving optical waveguide connected approximately perpendicularly to a light exit face at one side, a second light deriving optical waveguide connected approximately perpendicularly to another light exit face at the other side and having an optical axis different from that of the first light deriving optical waveguide, and a light emitting optical waveguide subjected to optical coupling with a periodical diffraction grating for optical resonance, and connected to end portions of the first and second light deriving optical waveguides within the semiconductor laser device.
摘要翻译：本发明涉及一种改进的半导体激光器件，其包括大致垂直于一侧的光出射面连接的第一导光光波导，在另一侧大致垂直于另一光出射面连接的第二导光光波导，并具有与第一导光光波导的光轴不同的光轴和与光谐振的周期性衍射光栅进行光耦合的发光光波导，并且连接到半导体内的第一和第二导光光波导的端部激光装置。

8. 发明授权

US5477319A Optical heterodyne detection method and apparatus utilizing a scattered reference beam 失效
标题翻译：利用散射参考光束的光外差检测方法和装置
公开(公告)号：US5477319A
公开(公告)日：1995-12-19
申请号：US171478
申请日：1993-12-22
申请人： Atsushi Shimonaka , Tatsuya Morioka , Mototaka Taneya , Hidenori Kawanishi , Haruhisa Takiguchi
发明人： Atsushi Shimonaka , Tatsuya Morioka , Mototaka Taneya , Hidenori Kawanishi , Haruhisa Takiguchi
IPC分类号： G02F2/00 , H04B10/07 , H04B10/116 , H04B10/27 , H04B10/29 , H04B10/516 , H04B10/556 , H04B10/564 , H04B10/572 , H04B10/61 , G01B9/02
CPC分类号： H04B10/1121
摘要： An optical heterodyne detection method of detecting a beat signal by heterodyne detection using a superimposition of two or more beams of light including a signal beam and a reference beam, includes the steps of: generating a scattered reference beam from the reference beam: and detecting the beat signal obtained from the scattered reference beam and the signal beam, by superimposing the scattered reference beam and the signal beam.
摘要翻译：一种通过使用包括信号光束和参考光束的两个或更多个光束的叠加的外差检测来检测拍子信号的光学外差检测方法包括以下步骤：从参考光束产生散射参考光束，并且检测通过叠加散射参考光束和信号光束，从散射参考光束和信号光束获得的拍子信号。

9. 发明授权

US5457561A System for transmitting a beam in the air 失效
标题翻译：用于在空中传输光束的系统
公开(公告)号：US5457561A
公开(公告)日：1995-10-10
申请号：US101080
申请日：1993-08-04
申请人： Mototaka Taneya , Seiki Yano , Haruhisa Takiguchi , Atsushi Shimonaka , Tatsuya Morioka , Hidenori Kawanishi
发明人： Mototaka Taneya , Seiki Yano , Haruhisa Takiguchi , Atsushi Shimonaka , Tatsuya Morioka , Hidenori Kawanishi
IPC分类号： H04B10/61 , H04B10/079 , H04B10/11 , H04B10/116 , H04B10/293 , H04B10/516 , H04B10/556 , H04B10/564 , H04B10/572 , H04B10/00
CPC分类号： H04B10/1121
摘要： A system for transmitting information with a coherent beam being propagatable in the air is arranged to include a transmitting device having a modulator and an emitting circuit and a receiving device having a generator, a mixer, a frequency discriminating circuit, and reproducing circuit. The modulator modulates a reference light frequency (wavelength) or phase of a coherent beam to be emitted from a light source according to the signal. The emitting circuit emits the modulated beam as a divergent beam having such a power density as being safe to human eyes. The generator generates a coherent locally oscillated beam. The mixer mixes the signal beam with the locally oscillated beam and photoelectric-converts the mixed beam. The frequency discriminating circuit frequency-discriminates the a.c. component of the photoelectric-converted output. The reproducing circuit reproduces a signal from the output of frequency discriminating circuit. Any one of the transmitting device and the receiving device has a function of keeping a relative light frequency difference (wavelength difference) between the signal beam and the locally oscillated beam constant.
摘要翻译：用于在空气中传播的相干光束传输信息的系统被布置成包括具有调制器和发射电路的发射装置和具有发生器，混频器，鉴频电路和再现电路的接收装置。调制器根据信号调制要从光源发射的相干光束的参考光频率（波长）或相位。发射电路发射调制束作为具有对人眼安全的功率密度的发散光束。发生器产生相干局部振荡光束。混合器将信号光束与局部振荡光束混合，并对混合光束进行光电转换。频率鉴别电路对a.c.进行频率鉴别。光电转换输出的分量。再现电路从频率鉴别电路的输出再现信号。发送装置和接收装置中的任一个具有保持信号光束与局部振荡光束之间的相对光频差（波长差）恒定的功能。

10. 发明授权

US5182758A Periodic gain-type semiconductor laser device 失效
标题翻译：周期性增益型半导体激光器件
公开(公告)号：US5182758A
公开(公告)日：1993-01-26
申请号：US802118
申请日：1991-12-04
申请人： Mototaka Taneya , Fumihiro Konushi , Toshiyuki Okumura , Haruhisa Takiguchi
发明人： Mototaka Taneya , Fumihiro Konushi , Toshiyuki Okumura , Haruhisa Takiguchi
IPC分类号： H01S5/00 , H01S5/12 , H01S5/22 , H01S5/227 , H01S5/323
CPC分类号： H01S5/1228 , H01S5/227 , H01S5/2201 , H01S5/32308
摘要： A periodic gain-type semiconductor laser device in which a mesa stripe has wide portions and narrow portions alternately arranged with a period that is an integral multiple of the half-wavelength of the emitted light. A multilayer structure including an n-AlGaAs first cladding layer 103 and an AlGaAs non-doped active layer 104 formed on the mesa stripe also have wide portions and narrow portions. An n-AlGaAs current confining layer 106 covers the sides of the AlGaAs non-doped active layer 104. The height of the top surface of the n-AlGaAs current confining layer 106 matches the height of the AlGaAs non-doped active layer 104. A p-AlGaAs second cladding layer 105 is formed on the AlGaAs non-doped active layer 104 and the current confining layer 106. A driving current is not injected into the narrow portions of the AlGaAs non-doped active layer 104.
摘要翻译：一种周期性增益型半导体激光装置，其中台面条具有宽的部分，并且窄周期以发射的光的半波长的整数倍的周期交替布置。包括形成在台面条上的n-AlGaAs第一包层103和AlGaAs非掺杂有源层104的多层结构也具有宽部分和窄部分。 n-AlGaAs电流限制层106覆盖AlGaAs非掺杂有源层104的侧面.n-AlGaAs电流限制层106的顶表面的高度与AlGaAs非掺杂有源层104的高度匹配。在AlGaAs非掺杂有源层104和电流限制层106上形成p-AlGaAs第二包层105.驱动电流不被注入到AlGaAs非掺杂有源层104的窄部分中。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式