专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

51. 发明专利

JPH01262500A X-RAY TRANSMITTABLE FILM 失效
公开(公告)号：JPH01262500A
公开(公告)日：1989-10-19
申请号：JP8904388
申请日：1988-04-13
申请人： HITACHI LTD
发明人： KATO YASUO , OCHIAI ISAO , SATO TOSHIHIKO , IMAI KUNINORI , KUBOTA SHIGEO
IPC分类号： G21K5/00 , G03F7/20 , H01J35/18 , H01L21/027
摘要： PURPOSE:To increase the strength of the title film and to prevent the damage of said film by radiations, etc., by expending at least two sheets of beryllium films in tight contact with each other. CONSTITUTION:The beryllium film 1 is provided on an inner side of an O-ring 3 and shuts off the heat rays, charged particles, impact waves, and splashes generated by an electric discharge to prevent the damage of the beryllium film 2 which makes vacuum sealing. The thickness of the beryllium film 1 is specified to about 5mum and the thickness of the beryllium film 2 to about 15mum. The beryllium film 2 is held pressed upward by the atm. and since the wind pressure that the beryllium film 1 receives from the impact waves is directed downward, said film is supported by the beryllium film 2. The heat that the beryllium film 1 receives is transmitted by the heat conduction from the contact part to the beryllium film 2 which is cooled by the atm. The strength of the film is thereby increased and the damage by the heat rays, charged particles, etc., is substantially prevented.

52. 发明专利

JPS63107186A WAFER TYPE CERAMIC SUBSTRATE 失效
公开(公告)号：JPS63107186A
公开(公告)日：1988-05-12
申请号：JP25168686
申请日：1986-10-24
申请人： HITACHI LTD
发明人： OKUYA KEN , OTSUKA KANJI , YAMADA TAKEO , KURODA SHIGEO , SATO TOSHIHIKO
IPC分类号： H05K1/02

53. 发明专利

JPS63107145A FLIP CHIP 失效
公开(公告)号：JPS63107145A
公开(公告)日：1988-05-12
申请号：JP25167586
申请日：1986-10-24
申请人： HITACHI LTD
发明人： ISHIDA TAKASHI , SATO TOSHIHIKO
IPC分类号： H01L21/60
摘要： PURPOSE:To prevent the peel-off between metal layers in ground layers beneath an electrode and to improve the life of the electrode, by forming a meniscus part at the lower edge part of the ground layer of the electrode in a flip chip having a protruding electrode. CONSTITUTION:The surface of a planar element, in which inner electrode wiring 3 consisting of an Al electrode wiring is formed, is coated with a protecting film 4 consisting of an SiO2 film, a glass film and the like. An electrode window is provided in the protecting film 4. A Cr layer 6 is constituted by chemical dry etching so as to form a meniscus 11 at the inner skirt of an egdge part 10 of the window. Then sputtering or ion milling is performed when a Cu layer 7 and an Au layer 8 are formed. As a result, the side walls of the end parts of the etched Cu layer 7 and Au layer 8 are vertically etched with respect to the protecting film 4. Stress concentration is made less by the formation of the meniscus 11 in this way, and the peel-off of the Cr layers from the other layer 5 can be prevented.

54. 发明专利

JPS634653A WIRING SUBSTRATE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPS634653A
公开(公告)日：1988-01-09
申请号：JP14690686
申请日：1986-06-25
申请人： HITACHI LTD
发明人： SATO TOSHIHIKO , OTSUKA KANJI , SAWARA KUNIZO , YAMADA TAKEO , TANAKA TAMOTSU , OKUYA KEN , KURODA SHIGEO , TAKEO YOSHIHISA , KOBAYASHI TSUNEO , HIOKI SUSUMU
IPC分类号： H01L23/522 , H01L21/768 , H01L23/12 , H01L23/14
摘要： PURPOSE:To prevent the generation of deformation such as warpage in a wiring substrate, and to connect an electronic part such as a semiconductor chip and the wiring substrate electrically and positively by forming a diffused junction layer near a through-wiring. CONSTITUTION:A semiconductor substrate 10 is etched to shape grooves 10A, insulating films 11 are formed onto both the surface and the back and grooves 11A are shaped. Wirings 12 are formed in the groove sections 11A, thus shaping a first laminate 13. A plurality of the first laminates 13 are superposed between semiconductor substrates 14, and diffused junction layers 16 shown in dotted lines are formed on joint surfaces 15 by using a solid diffused junction technique. Accordingly, the semiconductor substrates 14, the first laminates 13, the next first laminates 13 and the further next laminate 13 are each joined firmly without generating deformation such as warpage, thus forming a second laminate 17, then ensuring electric connections.

55. 发明专利

JPS61148819A STRUCTURE FOR MASK ALIGNMENT PATTERN 失效
公开(公告)号：JPS61148819A
公开(公告)日：1986-07-07
申请号：JP27083684
申请日：1984-12-24
申请人： HITACHI LTD
发明人： KAMATA CHIYOSHI , OTSUKA KANJI , SATO TOSHIHIKO , KASHIMURA HIRONOBU
IPC分类号： G03F9/00 , H01L21/30
摘要： PURPOSE:To enable a high precision of mask alignment regardless of positive process or negative process by constructing with a pattern portion in which the length between the opposed sides of a step is larger in an upper layer, and a pattern portion in which the length between the opposed sides of a step is smaller in an upper layer. CONSTITUTION:A plurality of layers are superposed and constructed so that there are provided a pattern portion including steps having a width which is larger in an upper layer, and a pattern portion including steps having a width which is smaller in an upper layer. For instance, a pattern 11 of a three-layer structure consisting of layers 11a, 11b, 11c is constructed so that it has a substantially cruciform plane shape, and the upper and left pattern portions 12, 14 of the respective upper, lower, left and right pattern portions of the cross 12, 13, 14, 15 have a cross-sectional shape in which the edge which is narrower in an upper layer, and the lower and right pattern portions 13, 15 have cross-sectional shape in which the edge width is made wider as it approaches an upper layer.

56. 发明专利

JP2000068313A SEMICONDUCTOR CHIP AND SEMICONDUCTOR DEVICE USING THE SAME 失效
公开(公告)号：JP2000068313A
公开(公告)日：2000-03-03
申请号：JP24652398
申请日：1998-08-18
申请人： HITACHI LTD
发明人： ANDO HIDEKO , KIKUCHI HIROSHI , YOSHIDA IKUO , SATO TOSHIHIKO
IPC分类号： H01L21/60
摘要： PROBLEM TO BE SOLVED: To increase effective area of solder bump arrangement. SOLUTION: Electrode contacting openings 17 are opened on a shielding film 16, that coats the main surface of an active region 11 side of a semiconductor chip 10, solder bumps 12 are protruded at positions apart from the electrode contacting openings 17, and the solder bumps 12 are electrically connected to the electrode connecting openings 17 with electrical wiring 18 laid on the surface of the shielding film 16. Height h of the solder bumps 12, distance L between the edge of a solder bump 12 and an electrode connecting opening 17, opening width a of the electrode connecting opening 17, and thickness t of the shielding film are designed so as to satisfy the inequality (h/L)

57. 发明专利

JPH11296821A MAGNETORESISTANCE ELEMENT, MAGNETIC HEAD, MAGNETIC RECORDING AND REPRODUCING DEVICE, AND PRODUCTION OF MAGNETORESISTANCE ELEMENT 失效
公开(公告)号：JPH11296821A
公开(公告)日：1999-10-29
申请号：JP9338298
申请日：1998-04-06
申请人： HITACHI LTD
发明人： NAKATANI RYOICHI , SHIMIZU NOBORU , MARUYAMA YOJI , SATO TOSHIHIKO
IPC分类号： G11B5/39 , G11B5/02
摘要： PROBLEM TO BE SOLVED: To produce a high-performance magnetoresistance element by using a multilayered film which exhibits a magnetic tunneling phenomenon. SOLUTION: A lower electrode 100 is formed of a laminate composed of a layer 14 consisting of IVA, Va metals of the periodic table and a layer 13 consisting of Au or Cu. Multilayered films 200 exhibiting a magneto-resistance effect are formed on this lower electrode 100. The IVA, Va metallic layer 14 in the lower electrode is not completely removed at the time of processing the multilayered films and the lower electrode by a photolithography stage. The state that the lower electrode 100 is held covered by the IVA, Va metallic layer 14 is thus maintained. When an insulator 18 is formed thereon, the insulator eventually comes into contact with the IVA, Va metallic layer 14 and, therefore, peeling does not occur any more even when the Au layer 13 is used for part of the electrode. The reaction of the Cu layer with resist may be prevented even when the Cu layer (13) is used.

58. 发明专利

JPH11296815A MAGNETORESISTANCE ELEMENT, MAGNETIC HEAD, MAGNETIC RECORDING AND REPRODUCING DEVICE AND, MANUFACTURE OF THE ELEMENT 失效
公开(公告)号：JPH11296815A
公开(公告)日：1999-10-29
申请号：JP9433998
申请日：1998-04-07
申请人： HITACHI LTD
发明人： NAKATANI RYOICHI , SHIMIZU NOBORU , MARUYAMA YOJI , SATO TOSHIHIKO
IPC分类号： G11B5/39
摘要： PROBLEM TO BE SOLVED: To produce a high performance magnetoresistance element using a multilayered film which shows a magnetic tunneling phenomenon. SOLUTION: The multilayered film 200, which shows a magnetic tunneling phenomenon, is formed on a bottom section electrode 100 in which an Au layer 14 is formed on the surface and is made of a metallic laminated body. Since the surface of the electrode is covered by the Au layer, no oxidation occurs for the electrode even though it is exposed to the atmosphere. Thus, no insulating layer exists between the electrode 100 and the film 200. While the film 200 is processed into a prescribed shape by a photolithographic process, the Au layer on the portion, where no multilayered film exists on the electrode, is simultaneously eliminated. If an insulating body 18 is formed on top of it, the body is formed on the portion, where no Au layer exists. Thus, no peeling occurs on the electrode 100 and the body 18.

59. 发明专利

JPH11259817A MAGNETORESISTIVE HEAD, AND MAGNETIC RECORDING AND REPRODUCING DEVICE 失效
公开(公告)号：JPH11259817A
公开(公告)日：1999-09-24
申请号：JP5770898
申请日：1998-03-10
申请人： HITACHI LTD
发明人： NAKATANI RYOICHI , SATO TOSHIHIKO
IPC分类号： G11B5/39
摘要： PROBLEM TO BE SOLVED: To provide a magnetoresistive head capable of causing a Coulomb blockage phenomenon at a room temperature and obtaining a high magnetic resistance change rate. SOLUTION: In this magnetoresistive head, a mulit-layer film is formed in the order of a magnetic layer 11, an insulation layer 12, a layer 15 where clusters 14 composed of a magnetic metal are scattered in an insulation body 13, the insulation layer 16 and the magnetic layer 17 in the order of separating from a substrate. By adjusting the density of the clusters 14 composed of the magnetic metal and scattered in the insulation body, the clusters form a magnetically coupled and electrically independent state with each other.

60. 发明专利

JPH1166654A FORMATION OF FINE STRUCTURE, FINE STRUCTURE, MAGNETIC SENSOR, MAGNETIC RECORDING MEDIUM AND MAGNETO-OPTICAL RECORDING MEDIUM 失效
公开(公告)号：JPH1166654A
公开(公告)日：1999-03-09
申请号：JP22146697
申请日：1997-08-18
申请人： HITACHI LTD
发明人： SATO TOSHIHIKO , NAKATANI RYOICHI , INABA NOBUYUKI , MATSUOKA HIDEYUKI , YAMANAKA ICHISUKE , MURAKAWA KATSUJI , ARAI MAKOTO
IPC分类号： G01R33/09 , G11B5/66 , G11B5/84 , G11B11/10 , G11B11/105 , H01L21/302 , H01L21/8242 , H01L27/108 , H01L43/08 , H01L43/12
摘要： PROBLEM TO BE SOLVED: To make it possible to control the average interval and the mutual arrangement of a fine structure and to increase the integrated density of the fine structure. SOLUTION: An aminosilane adsorption layer 25 is formed on a surface of a Si substrate 10 having a thin natural oxide film, and thereafter, carboxylate treated polystylene colloid particulates 40 having an average particle size of 50 nm are stuck to a surface of the aminosilane adsorption layer 25, and the polystylene colloid particulates 40 are subjected to a reactive ion etching using a fluorine carbide-based etching gas as an etching mask to form a fine columnar structure 100. Remaining polystylene particulates 41 and the aminosilane adsorption layer 25 are completely removed by the subsequent oxygen plasma ashing.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式