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1. 发明专利

JP2010114350A Method of manufacturing semiconductor device, and semiconductor device 有权
标题翻译：制造半导体器件的方法和半导体器件
公开(公告)号：JP2010114350A
公开(公告)日：2010-05-20
申请号：JP2008287478
申请日：2008-11-10
申请人： Hitachi Ltd , Honda Motor Co Ltd , 本田技研工業株式会社 , 株式会社日立製作所
发明人： YOKOYAMA GOICHI , ISHIDA TAKASHI , NAKAMURA MORIO , MIYAGAWA NOBUAKI
IPC分类号： H01L25/065 , H01L21/3205 , H01L23/52 , H01L25/07 , H01L25/18 , H01L27/00
CPC分类号： H01L2224/13009 , H01L2224/14 , H01L2224/16145 , H01L2224/17517 , H01L2224/32145 , H01L2224/32225 , H01L2224/45144 , H01L2224/48227 , H01L2224/73204 , H01L2224/73265 , H01L2225/06513 , H01L2225/06544 , H01L2924/01079 , H01L2924/1305 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/00 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To provide a technique capable of improving a manufacturing yield of a semiconductor device of a three-dimensional structure having a penetrating electrode. SOLUTION: By forming a support part with a spacer 49 and a second electrode 50a laminated therein in a region without having a first bump electrode 50 formed therein between a surface protective film 48 on a principal surface of a wafer W2 and a back surface of a wafer 3, the flexure of the wafer W3 is prevented to keep the distance between the surface protective film 48 on the principal surface of the wafer W2 and the back surface of the wafer W3 uniform. Accordingly, generation of an unfilled part of an adhesive 51 between the surface protective film 48 on the principal surface of the wafer W2 and the back surface of the wafer W3 is prevented. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：提供能够提高具有穿透电极的三维结构的半导体器件的制造成品率的技术。解决方案：通过在不具有在晶片W2的主表面上的表面保护膜48和背面之间形成的第一突起电极50的区域中形成具有间隔件49和第二电极50a的支撑部分，晶片3的表面，防止了晶片W3的弯曲，保持晶片W2的主表面上的表面保护膜48与晶片W3的后表面之间的距离一致。因此，防止在晶片W2的主表面上的表面保护膜48与晶片W3的背面之间产生粘合剂51的未填充部分。版权所有（C）2010，JPO＆INPIT

2. 发明专利

JP2000100869A SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JP2000100869A
公开(公告)日：2000-04-07
申请号：JP26870298
申请日：1998-09-22
申请人： HITACHI LTD
发明人： SATO MASAYUKI , ISHIDA TAKASHI
IPC分类号： H01L21/60
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device, capable of preventing the generation of α rays and increased manufacturing costs and mechanically electrically bonding a chip to a substrate by bonding terminals. SOLUTION: A bonding terminal 18c which bonding a semiconductor chip 10 to a substrate 20 has a bump 42 formed of Cu, a chip side solder layer 17 formed on both sides of the bump 42 and formed of Ag-Sn, and a substrate side solder layer 27 formed of Au-Sn, where the bump 42 is soldered to a chip- side electrode pad 12 by the chip-side solder layer 17 and is soldered to the substrate side electrode pad 22 with the substrate side solder layer 27. Since the Cu bump 42 is soldered by the chip side solder layer 17, formed of Ag-Sn and by the substrate side solder layer 27 formed of Au-Sn, the amount of use of solder can be reduced and moreover since no use of Pb is made, this reduces cost and prevents generation of α rays.

3. 发明专利

JPH08150899A ANTITHEFT DEVICE FOR VEHICLE 失效
公开(公告)号：JPH08150899A
公开(公告)日：1996-06-11
申请号：JP29708694
申请日：1994-11-30
申请人： NIPPON DENSO CO , MITSUBISHI ELECTRIC CORP , HITACHI LTD , TELEFUNKEN MICROELECTRON , MAZDA MOTOR
发明人： ISHIDA TAKASHI , SAWAMOTO TETSUO , NAGASAWA SHIRO , WACHI SATOSHI , ISHII TOSHIO , IKEDA YUJI , REINAA AATERU , NOBAATO HAATOUINGU , KIMURA SHOGO , TOOMASU RUUPUREHITO , OKAMITSU ATSUSHI , TAGAWA YUTAKA , KAWAZOE SATORU , KITAKI YOSHIMASA
IPC分类号： E05B49/00 , B60R25/04 , B60R25/24 , G08B13/00 , H04B1/06
摘要： PURPOSE: To provide an antitheft apparatus for vehicles having a further enhanced antitheft property such that when the proper driver who has lost the key is to re-register an ID code, all ID codes including that of the lost key, except the ID code of a key used for executing a re-registration mode, are eliminated so that only the ID code of the key owned by the proper driver is newly registered. CONSTITUTION: This apparatus has an immobilizer unit 4 which checks a characteristic ID code from a transponder 1 against the ID code of the immobilizer unit 4 and outputs code words to an EGI unit 9 when the codes match, and an EGI unit 9 which checks the code words against the code words stored in the EGI unit 9 and permits engine start when they match. The code words registered in the immobilizer unit 4 cannot be reloaded.

4. 发明专利

JPH08150898A ANTITHEFT DEVICE FOR VEHICLE,ETC 失效
公开(公告)号：JPH08150898A
公开(公告)日：1996-06-11
申请号：JP29618594
申请日：1994-11-30
申请人： NIPPON DENSO CO , MITSUBISHI ELECTRIC CORP , HITACHI LTD , TELEFUNKEN MICROELECTRON , MAZDA MOTOR
发明人： NAGASAWA SHIRO , ISHIDA TAKASHI , SAWAMOTO TETSUO , WACHI SATOSHI , ISHII TOSHIO , IKEDA YUJI , REINAA AATERU , NOBAATO HAATOUINGU , KIMURA SHOGO , TOOMASU RUUPUREHITO , KAWAZOE SATORU , OKAMITSU ATSUSHI , TAGAWA YUTAKA , KITAKI YOSHIMASA
IPC分类号： E05B49/00 , B60R25/04 , B60R25/24 , E05B83/36 , E05B65/20
摘要： PURPOSE: To design an antitheft apparatus for vehicles and the like so that if one of its security device and prime mover control device has failed, it can be replaced with a new device while properly maintaining security without increasing costs. CONSTITUTION: A first identification code is prestored in the EEPROM 80 of an engine control device 8. For replacement of a code checking device 3 in the event of failure, etc., the microcomputer 86 of the engine control device 8 causes the security code of a new code checking device to coincide with a second identification code in the EEPROM 80 when the microcomputer 86 determines that a code entered from an ignition key 1a coincides with the first identification code. The new code checking device stores the first identification code in the EEPROM by means of its microcomputer.

5. 发明专利

JPH08150896A ANTITHEFT DEVICE FOR VEHICLE 失效
公开(公告)号：JPH08150896A
公开(公告)日：1996-06-11
申请号：JP29681394
申请日：1994-11-30
申请人： HITACHI LTD , MAZDA MOTOR , NIPPON DENSO CO , MITSUBISHI ELECTRIC CORP , TELEFUNKEN MICROELECTRON
发明人： ISHII TOSHIO , IKEDA YUJI , OKAMITSU ATSUSHI , TAGAWA YUTAKA , KAWAZOE SATORU , KITAKI YOSHIMASA , ISHIDA TAKASHI , SAWAMOTO TETSUO , NAGASAWA SHIRO , WACHI SATOSHI , REINAA AATERU , NOBAATO HAATOUINGU , KIMURA SHOGO , TOOMASU RUUPUREHITO
IPC分类号： B60R25/04 , B60R25/042 , B60R25/045 , B60R25/32
摘要： PURPOSE: To prevent antitheft functions from operating while a vehicle is running with its internal combustion engine in operation by providing an antitheft apparatus which stops the output of fuel or ignition on detecting the theft of the vehicle, and stopping detection of vehicle theft when the vehicle is determined to be running. CONSTITUTION: When a key 12 is inserted into a key cylinder 13, a theft sensing part 10 determines whether or not the key 12 is the normal key to detect whether or not theft has been committed, and the result of sensing is coded for output to an engine control part 1. When the result indicates that theft has been committed, the engine control part 1 interrupts output signals to an injector 7 or ignition coil 8 to stop an internal combustion engine. When the engine control part 1 using a vehicle speed sensor 4 determines that the vehicle is running, it does not perform determination and detection by theft detecting means, but performs control on determining that no theft has been committed, until the supply of power is stopped by operation of the key 12.

6. 发明专利

JPH0750291A PLASMA DRY ETCHING DEVICE 失效
公开(公告)号：JPH0750291A
公开(公告)日：1995-02-21
申请号：JP19496393
申请日：1993-08-05
申请人： HITACHI LTD
发明人： ISHIDA TAKASHI
IPC分类号： C23F4/00 , H01L21/302 , H01L21/3065
摘要： PURPOSE:To perform etching under the optimum conditions by keeping a fixed distance between plasma and a semiconductor wafer. CONSTITUTION:High-frequency waves are applied on parallel flat electrodes 4 from a high-frequency generating means 5, and a plasma discharge area is detected by a detecting means 7. When the detection signal is too far from the prescribed position of a semiconductor wafer 6, the high-frequency power of the high-frequency generating means 5 is increased and when the detection signal is closer than the prescribed position of the semiconductor wafer, the high-frequency power of the high-frequency generating means 5 is reduced. Thus, a control means 8 performs automatic control and a distance between the plasma area and the semiconductor wafer is always kept fixed. The constitutive component in a vacuum process chamber 1 and a chamber 1a which is a container for shielding the inside of the chamber from the outside air and keeping the atmosphere are all composed of quartz.

7. 发明专利

JPH05312731A 失效
公开(公告)号：JPH05312731A
公开(公告)日：1993-11-22
申请号：JP11443392
申请日：1992-05-07
申请人： HITACHI LTD
发明人： ISHIDA TAKASHI , SATO MASAYUKI , NORITOMI TOYOSHIGE
IPC分类号： G01B11/30 , G01N21/88 , G01N21/956 , H01L21/66
摘要： PURPOSE:To improve the accuracy of detection of the defects of an object which has fine defects such as protrusions and burrs by a method wherein a light is applied to the object placed between a light source and a mirror plane and a reflected light from the surface of the defect and the reflected light from the neighborhood of the defect are detected. CONSTITUTION:A mirror plane 6 is provided on the top surface of an XY-table 1 which positions a semiconductor chip 2. A light source 7, a half-mirror 8 and a photodetector 9 are provided above the XY-table 1. A laser beam is applied to the mirror plane 6 vertically from the light source 7 and the reflected light is refracted by a half-mirror 8 and detected by the photodetector 9. The laser beam applied to the surface of a burr 5 produced by the dicing process of a semiconductor wafer makes diffused reflection and only a part of the reflected light enters the photodetector 9. To the contrary, the most part of the laser beam which is transmitted near the burr 5 and reflected by the mirror plane 6 enters the photodetector 9. Therefore, a high contrast between the two detected reflected lights is created, so that the size and surface shape of the burr 5 can be detected with a high accuracy.

8. 发明专利

JPH0574773A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH0574773A
公开(公告)日：1993-03-26
申请号：JP23139391
申请日：1991-09-11
申请人： HITACHI LTD , HITACHI VLSI ENG
发明人： KAWASHIMA MASAYUKI , OTSUKA KANJI , ISHIDA TAKASHI
IPC分类号： H01L21/60 , H01L21/321 , H01L23/12
摘要： PURPOSE:A semiconductor chip is mounted on a package board through the intermediary of a CCB bump to form a semiconductor integrated circuit device, where voids are prevented from being generated inside the CCB bump. CONSTITUTION:An electrode 3a formed on the primary face of a package substrate and a BLM(Ball Limiting Metallization) formed on the primary surface of an semiconductor chip 7 are bonded together through the intermediary of the CCB bump 6 to mount the semiconductor chip 7 on the package semiconductor board 2, where the BLM pattern 8 formed on the primary surface 7 is formed flat in cross section.

9. 发明专利

JPH0455332B2 失效
公开(公告)号：JPH0455332B2
公开(公告)日：1992-09-03
申请号：JP23974083
申请日：1983-12-21
申请人： HITACHI LTD
发明人： ISHIDA TAKASHI , OOTSUKA KANJI , SEKI MASATOSHI , SHIRAI MASAYUKI , YAMAZAKI YASUYUKI
IPC分类号： H01L23/02 , H01L21/50

10. 发明专利

JPS61125141A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：JPS61125141A
公开(公告)日：1986-06-12
申请号：JP24601684
申请日：1984-11-22
申请人： Hitachi Ltd
发明人： ISHIDA TAKASHI , SAWARA KUNIZO
IPC分类号： H01L21/60
CPC分类号： H01L24/81 , H01L2224/16 , H01L2224/81801
摘要： PURPOSE:To improve the heat radiation efficiency by connecting the bump electrodes for signal with the wiring on the dielectric layer of low dielectric constant on the package substrate or with the wiring on the semiconductor substrate to mount chips and by connecting the bump electrodes for power supply or grounding directly with the wiring on the package substrate. CONSTITUTION:The wiring 2 for power supply or grounding is installed on the surface of the package substrate 1 of silicon carbide. The low dielectric constant layer 3 decreases the effect of high dielectric constant of the package substrate 1. The signal electrode of the semiconductor chip 6 is electrically connected with the wiring 4 for signal by the bump electrode 5 for signal. The electrode for power supply or grounding is connected with the wiring 2 by the bump electrode 7. The heat generated in the semiconductor chip 1 conducts efficiently to the package substrate 1 through the bump electrode 7 for power supply or grounding whose thermal resistance is made small by making the radius large.
摘要翻译：目的：通过将信号用凸块电极与介质层上介质层上的布线连接在封装基板上或半导体基板上的布线上，通过连接凸块电极进行电源连接，提高散热效率或直接与封装基板上的布线接地。构成：用于电源或接地的布线2安装在碳化硅封装基板1的表面上。低介电常数层3降低了封装基板1的高介电常数的影响。半导体芯片6的信号电极与布线4电连接，通过凸块电极5进行信号的信号。用于供电或接地的电极通过凸块电极7与布线2连接。半导体芯片1中产生的热量通过其耐热性小的用于电源或接地的凸块电极7有效地传导到封装基板1 通过使半径大。

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