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51. 发明授权

US06869332B2 Chemical mechanical polishing of a metal layer with polishing rate monitoring 有权
标题翻译：用抛光速率监测金属层的化学机械抛光
公开(公告)号：US06869332B2
公开(公告)日：2005-03-22
申请号：US10412038
申请日：2003-04-10
申请人： Fred C. Redeker , Rajeev Bajaj
发明人： Fred C. Redeker , Rajeev Bajaj
IPC分类号： B24B37/013 , B24B49/02 , B24B49/12 , H01L21/00 , H01L21/321 , B24B7/22
CPC分类号： B24B37/013 , B24B49/02 , B24B49/12 , G01B7/105
摘要： A method of chemical mechanical polishing a metal layer on a substrate in which the substrate is polished at a first polishing rate. Polishing is monitored with an eddy current monitoring system, and the polishing rate is reduced to a second polishing rate when the eddy current monitoring system indicates that a predetermined thickness of the metal layer remains on the substrate. Then polishing is monitored with an optical monitoring system, and polishing is halted when the optical monitoring system indicates that an underlying layer is at least partially exposed.
摘要翻译：在基板上以第一抛光速率抛光基板的化学机械抛光金属层的方法。用涡流监测系统监测抛光，当涡流监测系统指示金属层的预定厚度保留在基板上时，抛光速率降低到第二抛光速率。然后用光学监测系统监测抛光，并且当光学监测系统指示底层至少部分暴露时，停止抛光。

52. 发明授权

US06676497B1 Vibration damping in a chemical mechanical polishing system 有权
标题翻译：化学机械抛光系统中的振动阻尼
公开(公告)号：US06676497B1
公开(公告)日：2004-01-13
申请号：US09658417
申请日：2000-09-08
申请人： Hung Chih Chen , John M. White , Shijian Li , Fred C. Redeker , Ramin Emami
发明人： Hung Chih Chen , John M. White , Shijian Li , Fred C. Redeker , Ramin Emami
IPC分类号： B24B700
CPC分类号： B24B37/30 , B24B37/12 , B24B37/32 , B24B41/007
摘要： A carrier head for chemical mechanical polishing, includes a base, a support structure attached to the base having a surface for contacting a substrate, and a retaining structure attached to the base to prevent the substrate from moving along the surface. The retaining structure and the surface define a cavity for receiving the substrate. The retaining structure includes an upper portion in contact with the base, a lower portion, and a vibration damper separating the upper portion and the lower portion. The vibration damper, the vibration damper includes a material that does not rebound to its original shape when subjected to a deformation.
摘要翻译：用于化学机械抛光的载体头包括基底，附着到具有用于接触基底的表面的基部的支撑结构以及附接到基部的保持结构，以防止基底沿着表面移动。保持结构和表面限定用于接收基底的空腔。保持结构包括与基座接触的上部，下部和分隔上部和下部的振动阻尼器。振动阻尼器，减震器包括当经受变形时不能反弹到其原始形状的材料。

53. 发明授权

US06645061B1 Polishing pad having a grooved pattern for use in chemical mechanical polishing 有权
标题翻译：具有用于化学机械抛光的带槽图案的抛光垫
公开(公告)号：US06645061B1
公开(公告)日：2003-11-11
申请号：US09441633
申请日：1999-11-16
申请人： Doyle E. Bennett , Thomas H. Osterheld , Fred C. Redeker , Ginetto Addiego
发明人： Doyle E. Bennett , Thomas H. Osterheld , Fred C. Redeker , Ginetto Addiego
IPC分类号： B24D1100
CPC分类号： B24B37/26
摘要： A polishing pad for a chemical mechanical polishing apparatus. The polishing pad includes a plurality of concentric circular grooves. The polishing pad may include multiple regions with grooves of different widths and spacings.
摘要翻译：一种用于化学机械抛光装置的抛光垫。抛光垫包括多个同心的圆形槽。抛光垫可以包括具有不同宽度和间隔的凹槽的多个区域。

54. 发明授权

US06592438B2 CMP platen with patterned surface 有权
标题翻译：带有图案表面的CMP压板
公开(公告)号：US06592438B2
公开(公告)日：2003-07-15
申请号：US09759556
申请日：2001-01-12
申请人： Robert D. Tolles , Steven T. Mear , Gopalakrishna B. Prabhu , Sidney Huey , Fred C. Redeker
发明人： Robert D. Tolles , Steven T. Mear , Gopalakrishna B. Prabhu , Sidney Huey , Fred C. Redeker
IPC分类号： B24B700
CPC分类号： B24B37/26 , B24B37/16 , Y10S451/921
摘要： A chemical mechanical polishing system is provided having one more polishing stations. The polishing stations include a platen and pad mounted to an upper surface of the platen. The upper surface of the platen is patterned to define a raised area and a recessed area. The raised area provides a rigid mounting surface for the pad and the recessed area provides the pad a desired degree of flexibility and compliance of the pad when brought into contact with a substrate.
摘要翻译：提供了具有一个以上抛光站的化学机械抛光系统。抛光站包括安装到压板上表面的压板和衬垫。将压板的上表面图案化以限定凸起区域和凹陷区域。凸起区域为衬垫提供刚性的安装表面，并且凹陷区域在衬垫与衬底接触时向衬垫提供期望程度的柔性和顺应性。

55. 发明授权

US06537144B1 Method and apparatus for enhanced CMP using metals having reductive properties 失效
公开(公告)号：US06537144B1
公开(公告)日：2003-03-25
申请号：US09505899
申请日：2000-02-17
申请人： Stan D. Tsai , Yuchun Wang , Kapila Wijekoon , Rajeev Bajaj , Fred C. Redeker
发明人： Stan D. Tsai , Yuchun Wang , Kapila Wijekoon , Rajeev Bajaj , Fred C. Redeker
IPC分类号： B24D1100
CPC分类号： B24B37/26 , B24B53/017 , H01L21/3212
摘要： Dishing in chemical mechanical polishing (CMP) is reduced by introducing a material that balances electrochemical forces. In a first embodiment of the invention, a polishing pad having copper material in grooves on the polishing pad surface is used in the polishing process to reduce dishing. In a second embodiment of the invention, the polishing pad has perforations with copper fillings. In a third embodiment of the invention, a copper retaining ring on the polishing head introduces copper material to the CMP process to reduce dishing. In a fourth embodiment of the invention, a conditioning plate of copper is used in the polishing apparatus. In a fifth embodiment of the invention, additional copper features are placed on the substrate to be polished. The polishing of the additional features introduces copper steadily through the polishing process. In a sixth embodiment of the invention, copper compounds are added to the polish slurry.

56. 发明授权

US06520840B1 CMP slurry for planarizing metals 失效
标题翻译：用于平坦化金属的CMP浆料
公开(公告)号：US06520840B1
公开(公告)日：2003-02-18
申请号：US09692723
申请日：2000-10-19
申请人： Yuchun Wang , Rajeev Bajaj , Fred C. Redeker
发明人： Yuchun Wang , Rajeev Bajaj , Fred C. Redeker
IPC分类号： B24B100
CPC分类号： C09K3/1463 , C09G1/02
摘要： A CMP slurry is formulated with an oxidizer capable of oxidizing a metal undergoing planarization and yielding a complexing agent which complexes with the oxidized metal thereby minimizing overetching. The slurry may further include abrasive particles, inhibitors, pH adjusting agents, and combinations thereof.
摘要翻译：用能够氧化经历平坦化的金属的氧化剂配制CMP浆料，并产生与氧化金属络合的络合剂，从而使过蚀刻最小化。浆料还可包括磨料颗粒，抑制剂，pH调节剂及其组合。

57. 发明授权

US06485359B1 Platen arrangement for a chemical-mechanical planarization apparatus 失效
标题翻译：用于化学机械平面化装置的压板装置
公开(公告)号：US06485359B1
公开(公告)日：2002-11-26
申请号：US09663815
申请日：2000-09-15
申请人： Shijian Li , Fred C. Redeker , John White , Manoocher Birang
发明人： Shijian Li , Fred C. Redeker , John White , Manoocher Birang
IPC分类号： B24B2900
CPC分类号： B24B7/228 , B24B55/02 , B24D9/085
摘要： A chemical mechanical polishing machine is provided with a platen that has an integral sub-pad. A fixed abrasive polishing layer is mounted, without adhesive between the polishing layer and the sub-pad, to the top surface of the platen and the sub-pad. The polishing layer is vacuum mounted, for example, to the integral sub-pad of the platen. A cooling arrangement is provided in the platen that cools the polishing layer and improves product quality.
摘要翻译：化学机械抛光机设置有具有整体子垫的压板。将固定的研磨抛光层安装到抛光层和子焊盘之间，而不需要在压板和子焊盘的顶表面上。抛光层例如被真空安装到压板的整体子垫上。在压板中设置冷却装置，其冷却抛光层并提高产品质量。

58. 发明授权

US06436302B1 Post CU CMP polishing for reduced defects 失效
标题翻译：后CU CMP抛光减少缺陷
公开(公告)号：US06436302B1
公开(公告)日：2002-08-20
申请号：US09492267
申请日：2000-01-27
申请人： Juy-Lung Li , Tse-Yong Yao , Fred C. Redeker , Rajeev Bajaj , Yutao Ma
发明人： Juy-Lung Li , Tse-Yong Yao , Fred C. Redeker , Rajeev Bajaj , Yutao Ma
IPC分类号： H01L21463
CPC分类号： H01L21/7684 , H01L21/02074 , H01L21/3212
摘要： Cu metallization is treated to reduce defects and effect passivation, and to reduce leakage between lines, by removing surface defects subsequent to CMP and barrier layer removal. Embodiments include the sequential steps of: CMP and barrier layer removal; buffing with a solution comprising citric acid, ammonium hydroxide and deionized water to remove copper oxide; rinsing with deionized water or an inhibitor solution, e.g., benzotriazole or 5-methyl triazole in deionized water; buffing with an abrasive slurry; and rinsing with deionized water or an inhibitor solution.
摘要翻译：处理Cu金属化以减少缺陷并实现钝化，并通过去除CMP和阻挡层去除之后的表面缺陷来减少线之间的泄漏。实施例包括顺序步骤：CMP和阻挡层去除; 用包含柠檬酸，氢氧化铵和去离子水的溶液抛光以除去氧化铜; 用去离子水或抑制剂溶液（例如苯并三唑或5-甲基三唑）在去离子水中冲洗; 用磨料浆抛光; 并用去离子水或抑制剂溶液冲洗。

59. 发明授权

US06309276B1 Endpoint monitoring with polishing rate change 有权
标题翻译：端点监测与抛光速率变化
公开(公告)号：US06309276B1
公开(公告)日：2001-10-30
申请号：US09495616
申请日：2000-02-01
申请人： Stan Tsai , Fred C. Redeker , Kapila Wijekoon
发明人： Stan Tsai , Fred C. Redeker , Kapila Wijekoon
IPC分类号： B24B100
CPC分类号： B24B37/013 , B24B37/042 , B24B49/04 , B24B49/12
摘要： A substrate with a first layer disposed on a second layer is chemically mechanically polished. A polishing endpoint detection system generates a signal that is monitored for an endpoint criterion. The polishing rate of the substrate is reduced when the bulk of the first layer has been removed but before the second layer is exposed. For example, the polishing rate is reduced when the polishing time approaches an expected polishing end time but before the endpoint criterion is detected. Polishing stops once the endpoint criterion is detected after the underlying layer has been exposed.
摘要翻译：具有设置在第二层上的第一层的衬底被化学机械抛光。抛光端点检测系统生成监视端点标准的信号。当第一层的主体已被去除但在第二层被暴露之前，衬底的抛光速率降低。例如，当抛光时间接近预期的抛光结束时间但在检测到端点标准之前，抛光速率降低。一旦在底层暴露后检测到终点标准，抛光停止。

60. 发明授权

US06220201B1 High density plasma CVD reactor with combined inductive and capacitive coupling 失效
标题翻译：具有组合电感和电容耦合的高密度等离子体CVD反应堆
公开(公告)号：US06220201B1
公开(公告)日：2001-04-24
申请号：US09111625
申请日：1998-07-07
申请人： Romuald Nowak , Kevin Fairbairn , Fred C. Redeker
发明人： Romuald Nowak , Kevin Fairbairn , Fred C. Redeker
IPC分类号： C23C1600
CPC分类号： H01J37/32091 , H01J37/321 , H01J37/3244
摘要： The invention is embodied in a plasma reactor having a vacuum chamber with a cylindrical side portion and a ceiling at a certain height above the top of the cylindrical side portion, a wafer-holding pedestal near the bottom of the vacuum chamber, gas injection ports near the cylindrical side portion and a vacuum pump, the reactor including a generally planar disk-shaped conductive ceiling electrode adjacent the ceiling, a helical coil antenna having a bottom winding near the top of the cylindrical side portion and a top winding generally corresponding to the second diameter near the planar disk-shaped conductive ceiling electrode, the helical coil antenna substantially spanning the height between the top of the cylindrical side portion and the ceiling, and a switch for individually connecting each one of the coil antenna, the ceiling electrode and the wafer pedestal to one of (a) a respective RF power source or (b) ground or (c) a floating potential (i.e., unconnected to any potential source). The invention is also embodied in a plasma reactor having a vacuum chamber, a wafer-holding pedestal near the bottom of the vacuum chamber, gas injection ports and a vacuum pump, the reactor including a conductive ceiling electrode at the top of the chamber, a coil antenna having a top generally coplanar with the ceiling electrode and a base generally coinciding with a circumference of the vacuum chamber, and a switch for individually connecting each one of the coil antenna, the ceiling electrode and the wafer pedestal to one of (a) a respective RF power source, or (b) ground or (c) a floating potential. In one embodiment, the reactor is a chemical vapor deposition plasma reactor.
摘要翻译：本发明体现在具有真空室的等离子体反应器中，该真空室具有圆柱形侧部和位于圆柱形侧部顶部上方一定高度的顶部，靠近真空室底部的晶片保持基座，靠近气体注入口的气体注入口圆柱形侧部和真空泵，反应器包括与天花板相邻的大致平面的盘形导电顶板电极，具有靠近圆柱形侧部顶部的底部绕组的螺旋线圈天线和通常对应于第二直径靠近平面盘状导电天花板电极，螺旋线圈天线基本跨越圆柱形侧部的顶部与天花板之间的高度，以及用于单独连接线圈天线，天花板电极和晶片中的每一个的开关（a）相应的RF电源或（b）接地或（c）浮动电位之一（即，未连接到任何电位资源）。本发明还体现在具有真空室，靠近真空室底部的晶片保持基座，气体注入端口和真空泵的等离子体反应器中，该反应器包括位于室顶部的导电天花板电极，线圈天线具有与天花板电极大致共面的顶部和大致与真空室的圆周重合的基座，以及用于将线圈天线，天花板电极和晶片基座中的每一个单独连接到（a）相应的RF电源，或（b）接地或（c）浮动电位。在一个实施方案中，反应器是化学气相沉积等离子体反应器。

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