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41. 发明申请

US20050150454A1 Deposition chamber and method for depositing low dielectric constant films 有权
标题翻译：沉积室和沉积低介电常数膜的方法
公开(公告)号：US20050150454A1
公开(公告)日：2005-07-14
申请号：US10997311
申请日：2004-11-23
申请人： Shijian Li , Yaxin Wang , Fred Redeker , Tetsuya Ishikawa , Alan Collins
发明人： Shijian Li , Yaxin Wang , Fred Redeker , Tetsuya Ishikawa , Alan Collins
IPC分类号： C23C16/44 , C23C14/34 , C23C16/40 , C23C16/455 , H01L21/205 , H01L21/31 , C23C16/00
CPC分类号： C23C16/45574 , C23C16/401 , C23C16/45512 , C23C16/45514 , C23C16/45576 , H01J37/3244
摘要： An improved deposition chamber (2) includes a housing (4) defining a chamber (18) which houses a substrate support (14). A mixture of oxygen and SiF4 is delivered through a set of first nozzles (34) and silane is delivered through a set of second nozzles (34a) into the chamber around the periphery (40) of the substrate support. Silane (or a mixture of silane and SiF4) and oxygen are separately injected into the chamber generally centrally above the substrate from orifices (64, 76). The uniform dispersal of the gases coupled with the use of optimal flow rates for each gas results in uniformly low (under 3.4) dielectric constant across the film.
摘要翻译：改进的沉积室（2）包括限定容纳衬底支撑件（14）的腔室（18）的壳体（4）。氧和SiF 4的混合物通过一组第一喷嘴（34）输送，并且硅烷通过一组第二喷嘴（34a）被输送到周围（40）的腔室内底物支撑。将硅烷（或硅烷和SiF 4 Si的混合物）和氧分别从孔口（64,76）中心地注入到基底上方的腔室中。气体的均匀分散与每种气体的最佳流速相结合，导致薄膜均匀低（低于3.4）的介电常数。

42. 发明授权

US06863794B2 Method and apparatus for forming metal layers 失效
标题翻译：用于形成金属层的方法和装置
公开(公告)号：US06863794B2
公开(公告)日：2005-03-08
申请号：US09961134
申请日：2001-09-21
申请人： Stan Tsai , Shijian Li
发明人： Stan Tsai , Shijian Li
IPC分类号： B23H5/08 , C25D5/18 , C25D5/22 , C25D5/06 , C25D11/32 , H01L21/288
CPC分类号： C25D5/18 , B23H5/08 , C25D5/22
摘要： A method of forming a metal layer on a substrate is disclosed. The metal layer is formed using a combined electrochemical plating/electrochemical mechanical polishing (ECP/EMP) process. In the ECP/EMP process, the metal layer is deposited on the substrate by contacting the substrate with a porous pad and then alternately applying a first electrical potential and a second electrical potential to an electrolyte plating solution. The first electrical potential functions to deposit metal on the substrate while the second electrical potential functions to remove metal from topographic portions thereof.
摘要翻译：公开了一种在基板上形成金属层的方法。使用组合的电化学电镀/电化学机械抛光（ECP / EMP）工艺形成金属层。在ECP / EMP工艺中，通过使衬底与多孔焊盘接触而将金属层沉积在衬底上，然后交替地向电解镀液中施加第一电位和第二电位。第一电势用于将金属沉积在衬底上，而第二电势用于从其地形部分去除金属。

43. 发明授权

US06833052B2 Deposition chamber and method for depositing low dielectric constant films 失效
标题翻译：沉积室和沉积低介电常数膜的方法
公开(公告)号：US06833052B2
公开(公告)日：2004-12-21
申请号：US10283565
申请日：2002-10-29
申请人： Shijian Li , Yaxin Wang , Fred C. Redeker , Tetsuya Ishikawa , Alan W. Collins
发明人： Shijian Li , Yaxin Wang , Fred C. Redeker , Tetsuya Ishikawa , Alan W. Collins
IPC分类号： C23F1600
CPC分类号： C23C16/45574 , C23C16/401 , C23C16/45512 , C23C16/45514 , C23C16/45576 , H01J37/3244
摘要： An improved deposition chamber (2) includes a housing (4) defining a chamber (18) which houses a substrate support (14). A mixture of oxygen and SiF4 is delivered through a set of first nozzles (34) and silane is delivered through a set of second nozzles (34a) into the chamber around the periphery (40) of the substrate support. Silane (or a mixture of silane and SiF4) and oxygen are separately injected into the chamber generally centrally above the substrate from orifices (64, 76). The uniform dispersal of the gases coupled with the use of optimal flow rates for each gas results in uniformly low (under 3.4) dielectric constant across the film.
摘要翻译：改进的沉积室（2）包括限定容纳衬底支撑件（14）的腔室（18）的壳体（4）。氧和SiF 4的混合物通过一组第一喷嘴（34）输送，并且硅烷通过一组第二喷嘴（34a）输送到围绕衬底支撑件的周边（40）的腔室中。将硅烷（或硅烷和SiF 4的混合物）和氧分别从孔口（64,76）中心地注入到基底上方的腔室中。气体的均匀分散与每种气体的最佳流速相结合，导致薄膜均匀低（低于3.4）的介电常数。

44. 发明授权

US06780773B2 Method of chemical mechanical polishing with high throughput and low dishing 失效
标题翻译：化学机械抛光方法，具有高通量和低凹陷
公开(公告)号：US06780773B2
公开(公告)日：2004-08-24
申请号：US10193469
申请日：2002-07-11
申请人： Shijian Li , Jui-Lung Li , Shi-Ping Wang , Gary Lam , David Mai , Fred C. Redeker
发明人： Shijian Li , Jui-Lung Li , Shi-Ping Wang , Gary Lam , David Mai , Fred C. Redeker
IPC分类号： H01L21641
CPC分类号： H01L21/3212 , B24B37/042 , B24B37/30 , H01L21/7684
摘要： Method and apparatus are provided for polishing conductive materials with low dishing of features and reduced or minimal remaining residues. In one aspect, a method is provided for processing a substrate by polishing the substrate to remove bulk conductive material and polishing the substrate by a ratio of carrier head rotational speed to platen rotational speed of between about 2:1 and about 3:1 to remove residual conductive material. In another aspect, a method is provided for processing a substrate including polishing the substrate at a first relative linear velocity between about 600 mm/second and about 1900 mm/second at the center of the substrate, and polishing the substrate at a second relative linear velocity between about 100 mm/second and about 550 mm/second at the center of the substrate.
摘要翻译：提供了用于抛光导电材料的方法和装置，其具有低的特征凹陷和减少的或最小的剩余残余物。在一个方面，提供了一种通过抛光衬底以去除体导电材料并通过载体头部旋转速度与平板旋转速度的比率在约2:1至约3:1之间来抛光衬底来进行衬底处理的方法，以去除残留导电材料。在另一方面，提供了一种用于处理衬底的方法，包括在衬底的中心以约600mm /秒至约1900mm /秒的第一相对线速度抛光衬底，并以第二相对线性在衬底的中心处的速度在约100mm /秒到约550mm /秒之间。

45. 发明授权

US06613200B2 Electro-chemical plating with reduced thickness and integration with chemical mechanical polisher into a single platform 失效
标题翻译：电化学镀层减薄，并与化学机械抛光机整合成单个平台
公开(公告)号：US06613200B2
公开(公告)日：2003-09-02
申请号：US09770559
申请日：2001-01-26
申请人： Shijian Li , Stan D. Tsai , Lizhong Sun
发明人： Shijian Li , Stan D. Tsai , Lizhong Sun
IPC分类号： C25D1700
CPC分类号： B24B37/32 , B24B37/046 , C25D17/001 , H01L21/2885 , H01L21/3212
摘要： An apparatus is provided for depositing and polishing a material layer on a substrate. In one embodiment, an apparatus is provided which includes a basin, a cover, a permeable disc, an anode and a polishing head. The permeable disc is disposed in the basin between the cover and the basin's bottom. The cover has an aperture disposed therein that includes a plurality of pins. The pins extend radially into the aperture and are adapted to support the substrate. The anode is disposed in the basin between the disc and the bottom of the basin. The polishing head is adapted to retain the substrate during processing and includes a retaining ring. The retaining ring has a plurality of grooves disposed therein that mate with the pins when the polishing head is disposed in the aperture. When the substrate is biased via the pins, the potential between the substrate and the anode causes material to be deposited on the substrate's surface.
摘要翻译：提供了一种用于在衬底上沉积和抛光材料层的装置。在一个实施例中，提供了一种装置，其包括盆，盖，可渗透盘，阳极和抛光头。可渗透盘设置在盖和盆底之间的盆中。盖具有设置在其中的孔，其包括多个销。销钉径向延伸到孔中并且适于支撑基底。阳极设置在圆盘和盆底之间的盆中。抛光头适于在加工过程中保持基底并且包括保持环。保持环具有设置在其中的多个槽，当抛光头设置在孔中时与该销相配合。当衬底经由引脚偏置时，衬底和阳极之间的电势使材料沉积在衬底的表面上。

46. 发明授权

US06592439B1 Platen for retaining polishing material 有权
标题翻译：压板用于保留抛光材料
公开(公告)号：US06592439B1
公开(公告)日：2003-07-15
申请号：US09709769
申请日：2000-11-10
申请人： Shijian Li , Manoocher Birang , Ramin Emami , Andrew Nagengast , Douglas Orcutt Brown , Shi-Ping Wang , Martin Scales , John White
发明人： Shijian Li , Manoocher Birang , Ramin Emami , Andrew Nagengast , Douglas Orcutt Brown , Shi-Ping Wang , Martin Scales , John White
IPC分类号： B24B2900
CPC分类号： B25B11/005 , B24B21/04 , B24B37/16 , H01L21/30625
摘要： Generally, a method and apparatus for retaining polishing material is provided. In one embodiment, the apparatus includes a platen having a top surface, a plurality of channels and one or more vacuum ports. The top surface is adapted to support the polishing material. The plurality of channels are formed in a polishing area of the top surface. The vacuum ports are disposed in the platen and at least one port is in communication with at least one of the channels. Upon application of a vacuum to the ports, the channels remove fluids under the polishing material while securing the polishing material to the top surface.
摘要翻译：通常，提供了用于保持抛光材料的方法和装置。在一个实施例中，该装置包括具有顶表面，多个通道和一个或多个真空端口的压板。顶表面适于支撑抛光材料。多个通道形成在顶表面的抛光区域中。真空端口设置在压板中，并且至少一个端口与至少一个通道连通。当向端口施加真空时，通道在将抛光材料固定到顶表面的同时移除抛光材料下面的流体。

47. 发明授权

US06589610B2 Deposition chamber and method for depositing low dielectric constant films 失效
公开(公告)号：US06589610B2
公开(公告)日：2003-07-08
申请号：US10174453
申请日：2002-06-17
申请人： Shijian Li , Yaxin Wang , Fred C. Redeker , Tetsuya Ishikawa , Alan W. Collins
发明人： Shijian Li , Yaxin Wang , Fred C. Redeker , Tetsuya Ishikawa , Alan W. Collins
IPC分类号： C23C16455
CPC分类号： C23C16/45574 , C23C16/401 , C23C16/45512 , C23C16/45514 , C23C16/45576 , H01J37/3244
摘要： An improved deposition chamber (2) includes a housing (4) defining a chamber (18) which houses a substrate support (14). A mixture of oxygen and SiF4 is delivered through a set of first nozzles (34) and silane is delivered through a set of second nozzles (34a) into the chamber around the periphery (40) of the substrate support. Silane (or a mixture of silane and SiF4) and oxygen are separately injected into the chamber generally centrally above the substrate from orifices (64, 76). The uniform dispersal of the gases coupled with the use of optimal flow rates for each gas results in uniformly low (under 3.4) dielectric constant across the film.

48. 发明授权

US06585563B1 In-situ monitoring of linear substrate polishing operations 失效
标题翻译：线性衬底抛光操作的原位监控
公开(公告)号：US06585563B1
公开(公告)日：2003-07-01
申请号：US09724846
申请日：2000-11-28
申请人： Fred C. Redeker , Manoocher Birang , Shijian Li , Sasson Somekh
发明人： Fred C. Redeker , Manoocher Birang , Shijian Li , Sasson Somekh
IPC分类号： B24B100
CPC分类号： B24B37/005 , B24B21/04 , B24B49/04 , B24B49/12 , H01L21/30625
摘要： A substrate polishing scheme (apparatus and method) is described according to which a polishing surface of a polishing sheet is driven in a generally linear direction by a drive mechanism, a surface of a substrate is held against the polishing surface of the polishing sheet by a polishing head, and the substrate is probed through the polishing sheet by a monitoring system.
摘要翻译：描述了基板抛光方案（装置和方法），根据该基板抛光方案，研磨片的抛光表面通过驱动机构在大致线性方向上被驱动，基板的表面通过一个抛光头，并且通过监视系统通过抛光片探测基板。

49. 发明授权

US06416823B2 Deposition chamber and method for depositing low dielectric constant films 有权
公开(公告)号：US06416823B2
公开(公告)日：2002-07-09
申请号：US09515574
申请日：2000-02-29
申请人： Shijian Li , Yaxin Wang , Fred C. Redeker , Tetsuya Ishikawa , Alan W. Collins
发明人： Shijian Li , Yaxin Wang , Fred C. Redeker , Tetsuya Ishikawa , Alan W. Collins
IPC分类号： C23L16455
CPC分类号： C23C16/45574 , C23C16/401 , C23C16/45512 , C23C16/45514 , C23C16/45576 , H01J37/3244
摘要： An improved deposition chamber (2) includes a housing (4) defining a chamber (18) which houses a substrate support (14). A mixture of oxygen and SiF4 is delivered through a set of first nozzles (34) and silane is delivered through a set of second nozzles (34a) into the chamber around the periphery (40) of the substrate support. Silane (or a mixture of silane and SiF4) and oxygen are separately injected into the chamber generally centrally above the substrate from orifices (64, 76). The uniform dispersal of the gases coupled with the use of optimal flow rates for each gas results in uniformly low (under 3.4) dielectric constant across the film.

50. 发明授权

US06251187B1 Gas distribution in deposition chambers 有权
标题翻译：沉积室中的气体分布
公开(公告)号：US06251187B1
公开(公告)日：2001-06-26
申请号：US09433086
申请日：1999-11-03
申请人： Shijian Li , Fred C. Redeker , Tetsuya Ishikawa
发明人： Shijian Li , Fred C. Redeker , Tetsuya Ishikawa
IPC分类号： C23C1600
CPC分类号： C23C16/507 , C23C16/4405 , C23C16/455 , C23C16/5096 , C23C16/517 , H01J37/3244
摘要： An improved deposition chamber (2) includes a housing (4) defining a vacuum chamber (18) which houses a substrate support (14). A set of first nozzles (34) have orifices (38) opening into the vacuum chamber in a circumferential pattern spaced apart from and generally overlying the periphery (40) of the substrate support. One or more seconds nozzle (56, 56a), positioned centrally above the substrate support, inject process gases into the vacuum chamber to improve deposition thickness uniformity. Deposition thickness uniformity is also improved by ensuring that the process gases are supplied to the first nozzles at the same pressure. If needed, enhanced cleaning of the nozzles can be achieved by slowly drawing a cleaning gas from within the vacuum chamber in a reverse flow direction through the nozzles using a vacuum pump (84).
摘要翻译：改进的沉积室（2）包括限定容纳衬底支撑件（14）的真空室（18）的壳体（4）。一组第一喷嘴（34）具有以与基板支撑件的周边（40）间隔开并且通常覆盖基板支撑件的周边（40）的圆周图案而开口进入真空室的孔口（38）。位于基板支架上方中心的一个或多个秒喷嘴（56,56a）将工艺气体注入真空室以改善沉积厚度均匀性。通过确保将工艺气体以相同的压力供应到第一喷嘴，也提高了沉积厚度均匀性。如果需要，可以通过使用真空泵（84）通过喷嘴沿反向流动方向从真空室内缓慢地抽取清洁气体来实现喷嘴的增强清洁。

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