专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

41. 发明授权

US06743733B2 Process for producing a semiconductor device including etching using a multi-step etching treatment having different gas compositions in each step 失效
标题翻译：在各工序中，使用具有不同气体成分的多步骤蚀刻处理的半导体装置的制造方法
公开(公告)号：US06743733B2
公开(公告)日：2004-06-01
申请号：US09946507
申请日：2001-09-06
申请人： Hiroyuki Kitsunai , Junichi Tanaka , Takashi Fujii , Motohiko Yoshigai
发明人： Hiroyuki Kitsunai , Junichi Tanaka , Takashi Fujii , Motohiko Yoshigai
IPC分类号： H01L21302
CPC分类号： H01L21/32137 , Y10S438/905 , Y10S438/907
摘要： By conducting etching treatment using at least two steps with different compositions of gases for each step, and at least one step comprising using a gas capable of decomposing and vaporizing etching products in an etching apparatus continuously, semicondictor devices can be produced with high productivity, low contaminant and good reproducibility of treatment state.
摘要翻译：通过使用至少两个步骤对每个步骤进行具有不同组成的气体的至少两个步骤的蚀刻处理，以及包括使用能够在蚀刻装置中连续分解和蒸发蚀刻产物的气体的至少一个步骤，可以以高生产率，低生产率生产半衰减器件污染物和处理状态的良好重复性。

42. 发明授权

US06660647B1 Method for processing surface of sample 失效
标题翻译：样品表面处理方法
公开(公告)号：US06660647B1
公开(公告)日：2003-12-09
申请号：US09646012
申请日：2001-01-11
申请人： Tetsuo Ono , Takafumi Tokunaga , Tadashi Umezawa , Motohiko Yoshigai , Tatsumi Mizutani , Tokuo Kure , Masayuki Kojima , Takashi Sato , Yasushi Goto
发明人： Tetsuo Ono , Takafumi Tokunaga , Tadashi Umezawa , Motohiko Yoshigai , Tatsumi Mizutani , Tokuo Kure , Masayuki Kojima , Takashi Sato , Yasushi Goto
IPC分类号： H01L2100
CPC分类号： H01J37/32082 , H01L21/32136 , H01L21/32139
摘要： A surface processing method of a sample having a mask layer that does not contain carbon as a major component formed on a substance to be processed, the substance being a metal, semiconductor and insulator deposited on a silicon substrate, includes the steps of installing the sample on a sample board in a vacuum container, generating a plasma that consists of a mixture of halogen gas and adhesive gas inside the vacuum container, applying a radio frequency bias voltage having a frequency ranging from 200 kHz to 20 MHz on the sample board, and controlling a periodic on-off of the radio frequency bias voltage with an on-off control frequency ranging from 100 Hz to 10 kHz.
摘要翻译：具有在被处理物质上形成的不含有碳作为主要成分的掩模层的样品的表面处理方法，该物质是沉积在硅基板上的金属，半导体和绝缘体，该物质包括如下步骤：在真空容器中的样品板上，在真空容器内产生由卤素气体和粘合气体的混合物构成的等离子体，在样品板上施加频率范围为200kHz〜20MHz的射频偏置电压，以从100Hz到10kHz的开关控制频率来控制射频偏置电压的周期性的断开。

43. 发明申请

US20100282414A1 PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：等离子体加工设备
公开(公告)号：US20100282414A1
公开(公告)日：2010-11-11
申请号：US12842368
申请日：2010-07-23
申请人： Naoshi ITABASHI , Tsutomu Tetsuka , Seiichiro Kanno , Motohiko Yoshigai
发明人： Naoshi ITABASHI , Tsutomu Tetsuka , Seiichiro Kanno , Motohiko Yoshigai
IPC分类号： H01L21/306
CPC分类号： H01J37/32706 , H01J37/32082 , H01J37/32495 , H01J37/32935 , H01L21/6831
摘要： A plasma processing apparatus including a chamber having an inner wall with a protective film thereon and a sample stage disposed in the chamber in which plasma is generated by supplying high-frequency wave energy to processing gas to conduct plasma processing for a sample on the sample stage using the plasma. The apparatus includes a control device which determines, based on monitor values of a wafer attracting current monitor (Ip) to monitor a current supplied from a wafer attracting power source, an impedance monitor (Zp) to monitor plasma impedance viewed from a plasma generating power source, and an impedance monitor (Zb) to monitor a plasma impedance viewed from a bias power supply, presence or absence of occurrence of an associated one of abnormal discharge in inner parts, deterioration in insulation of an insulating film of a wafer attracting electrode, and abnormal injection in a gas injection plate.
摘要翻译：一种等离子体处理装置，包括：室，具有保护膜的内壁和设置在室中的样品台，其中通过向处理气体提供高频波能以对样品台进行等离子体处理使用等离子体。该装置包括控制装置，其基于监视从晶片吸引电源提供的电流的晶片吸引电流监视器（Ip）的值来确定阻抗监视器（Zp），以监测从等离子体发生功率源极和阻抗监视器（Zb），用于监视从偏置电源观察的等离子体阻抗，是否存在内部部分的异常放电相关联的一种，晶片吸引电极的绝缘膜的绝缘的劣化，并在气体注射板中异常注入。

44. 发明授权

US07771607B2 Plasma processing apparatus and plasma processing method 有权
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US07771607B2
公开(公告)日：2010-08-10
申请号：US11696280
申请日：2007-04-04
申请人： Tsutomu Tetsuka , Kazuyuki Ikenaga , Tetsuo Ono , Motohiko Yoshigai , Naoshi Itabashi
发明人： Tsutomu Tetsuka , Kazuyuki Ikenaga , Tetsuo Ono , Motohiko Yoshigai , Naoshi Itabashi
IPC分类号： H01L21/306 , C23F1/00 , C23C16/00
CPC分类号： H01J37/32477 , C23F4/00
摘要： A plasma processing method for processing a substrate with plasma by applying a high frequency to a reaction chamber, and applying a second high frequency to a substrate holder includes covering at least 90% of a total surface area of an inner wall of the reaction chamber that is directly exposed to plasma with a dielectric, disposing a DC earth comprising a conductive portion that is earthed and having an area less than 10% of the inner wall of the reaction chamber, and performing plasma processing to the substrate in the reaction chamber having the DC earth located at a position where a floating potential of plasma is higher than the floating potential of plasma at the inner wall of the reaction chamber that is closest to the substrate.
摘要翻译：一种等离子体处理方法，用于通过向反应室施加高频处理具有等离子体的衬底，以及向衬底保持器施加第二高频包括覆盖反应室内壁的总表面积的至少90％，其中，直接暴露于具有电介质的等离子体，设置包括接地的导电部分并且具有小于反应室的内壁的10％的面积的DC地球，并且对具有所述反应室的反应室中的衬底进行等离子体处理位于位于反应室最靠近衬底的内壁处的等离子体的浮置电位高于等离子体的浮动电位的位置。

45. 发明申请

US20080257863A1 PLASMA PROCESSING APPARATUS AND METHOD FOR STABILIZING INNER WALL OF PROCESSING CHAMBER 审中-公开
标题翻译：等离子体加工装置和方法，用于稳定加工室内壁
公开(公告)号：US20080257863A1
公开(公告)日：2008-10-23
申请号：US11849264
申请日：2007-08-31
申请人： Hiroyuki Kitsunai , Naoshi Itabashi , Motohiko Yoshigai , Tetsuo Ono
发明人： Hiroyuki Kitsunai , Naoshi Itabashi , Motohiko Yoshigai , Tetsuo Ono
IPC分类号： C23F1/00
CPC分类号： H01J37/32477 , B08B7/0035 , H01J37/32935
摘要： A plasma processing apparatus is disclosed for removing the deposition film in the processing chamber and suppressing the corrosion of wall surface material. The plasma processing apparatus includes a plasma generating means, a monitor means for detecting the existence of a reaction product containing a material constituting an inner wall of the processing chamber, and an alarm means for notifying that the existence of the reaction product containing the material constituting the inner wall of the processing chamber has exceeded a predetermined amount. The plasma processing apparatus is configured such that plasma cleaning is performed for every arbitrary etching process, and a wall surface stabilization process is subsequently performed using O2 gas or F gas.
摘要翻译：公开了一种用于去除处理室中的沉积膜并抑制壁表面材料的腐蚀的等离子体处理装置。等离子体处理装置包括等离子体产生装置，用于检测含有构成处理室内壁的材料的反应产物的存在的监视装置，以及用于通知含有构成材料的反应产物的存在的报警装置处理室的内壁已经超过预定量。等离子体处理装置被配置为使得对于每个任意蚀刻工艺进行等离子体清洗，并且随后使用O 2气体或F气体执行壁表面稳定处理。

46. 发明授权

US07396771B2 Plasma etching apparatus and plasma etching method 失效
标题翻译：等离子体蚀刻装置和等离子体蚀刻方法
公开(公告)号：US07396771B2
公开(公告)日：2008-07-08
申请号：US11362867
申请日：2006-02-28
申请人： Go Miya , Seiichiro Kanno , Naoshi Itabashi , Motohiko Yoshigai , Junichi Tanaka , Masahito Mori , Naoyuki Kofuji , Go Saito
发明人： Go Miya , Seiichiro Kanno , Naoshi Itabashi , Motohiko Yoshigai , Junichi Tanaka , Masahito Mori , Naoyuki Kofuji , Go Saito
IPC分类号： H01L21/461 , H01L21/302
CPC分类号： H01L21/67069 , H01J37/32449 , H01J37/32935 , H01L21/32137 , H01L21/67248 , H01L21/67253
摘要： A plasma etching apparatus includes a processing chamber in which a specimen is subjected to plasma processing, a specimen holder for holding the specimen, the specimen holder including a temperature controller for controlling temperatures at at least 2 positions of the specimen, at least two gas supply sources for supplying processing gases, at least two gas inlets for introducing the processing gases into the processing chamber, a regulator for independently controlling the compositions or the flow rates of the processing gases introduced from the at least two gas inlets and the temperatures controlled with at least two temperature controllers in the specimen holder, and an electromagnetic wave supply unit for sending an electromagnetic wave into the processing chamber, wherein the compositions or the flow rates of the processing gases introduced from the gas inlets and the temperature controlled with the temperature controllers in the specimen holder are independently controlled.
摘要翻译：一种等离子体蚀刻装置，包括：处理室，其中试样经受等离子体处理;试样保持器，用于保持试样;试样架包括用于控制试样至少2个位置的温度的温度控制器，至少两个气体供应用于提供处理气体的源，用于将处理气体引入处理室的至少两个气体入口，用于独立地控制从至少两个气体入口引入的处理气体的组成或流速的调节器和由样品架中的至少两个温度控制器和用于将电磁波发送到处理室中的电磁波供给单元，其中从气体入口引入的处理气体的组成或流速以及用温度控制器控制的温度样品架独立控制。

47. 发明申请

US20080121344A1 PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：等离子体加工设备
公开(公告)号：US20080121344A1
公开(公告)日：2008-05-29
申请号：US12023874
申请日：2008-01-31
申请人： Tooru Aramaki , Tsunehiko Tsubone , Ryujiro Udo , Motohiko Yoshigai , Takashi Fujii
发明人： Tooru Aramaki , Tsunehiko Tsubone , Ryujiro Udo , Motohiko Yoshigai , Takashi Fujii
IPC分类号： C23F1/00 , C23C16/513
CPC分类号： C23C16/4581 , C23C16/4586 , C23C16/46 , H01J2237/2001 , H01L21/67109 , H01L21/6719
摘要： A plasma processing method for processing a sample by reducing a pressure within a processing chamber, including mounting the sample on a sample holder disposed in the processing chamber, and processing using a plasma generated in the processing chamber above the sample holder while supplying a gas for heat transfer to a space between a surface of the sample holder having the sample mounted thereon and a rear surface of the sample. The sample holder has a plurality of substantially ring-shaped depressed portions at the surface where the sample is mounted. A pressure in a space between the depressed portions arranged at a central portion of the sample holder with respect to outer circumferential portion and the sample is set to be lower than a pressure in a space between the depressed portions at the outer circumferential portion and the sample.
摘要翻译：一种用于通过减小处理室内的压力来处理样品的等离子体处理方法，包括将样品安装在设置在处理室中的样本保持器上，以及使用在样品架上方的处理室中产生的等离子体进行处理，同时为热传递到安装有样品的样品保持器的表面与样品的后表面之间的空间。样品保持器在样品安装的表面具有多个基本环形的凹陷部分。设置在样品保持架的中心部分相对于外周部分的凹陷部分和样品之间的空间中的压力被设定为低于外周部分的凹陷部分和样品之间的空间中的压力。

48. 发明申请

US20060132798A1 Method and apparatus for determining endpoint of semiconductor element fabricating process 有权
标题翻译：用于确定半导体元件制造工艺的端点的方法和装置
公开(公告)号：US20060132798A1
公开(公告)日：2006-06-22
申请号：US11340559
申请日：2006-01-27
申请人： Tatehito Usui , Takashi Fujii , Motohiko Yoshigai , Tetsunori Kaji , Hideyuki Yamamoto
发明人： Tatehito Usui , Takashi Fujii , Motohiko Yoshigai , Tetsunori Kaji , Hideyuki Yamamoto
IPC分类号： G01B11/02
CPC分类号： H01J37/32963 , G01B11/0675 , H01L22/26
摘要： Standard patterns of differential values of interference light that correspond to a predetermined step height of the first material being processed and standard patterns of differential values of interference light that correspond to a predetermined remaining mask layer thickness of the material are set. These standard patterns use wavelengths as parameters. Then, the intensities of interference light of multiple wavelengths are measured for a second material that has the same structure as the first material. Actual patterns with wavelength as parameter are determined from differential values of the measured interference light intensities. Based on the standard patterns and the actual patterns of the differential values, the step height and the remaining mask layer thickness of the second material are determined.
摘要翻译：对应于正在处理的第一材料的预定台阶高度的干涉光的差分值的标准图案和对应于材料的预定剩余掩模层厚度的干涉光的差分值的标准图案被设置。这些标准模式使用波长作为参数。然后，测量具有与第一材料相同结构的第二材料的多个波长的干涉光的强度。具有波长作为参数的实际图案由所测量的干涉光强度的差分值确定。基于标准图案和差分值的实际图案，确定第二材料的台阶高度和剩余掩模层厚度。

49. 发明申请

US20060073619A1 Semiconductor fabricating apparatus and method and apparatus for determining state of semiconductor fabricating process 审中-公开
标题翻译：用于确定半导体制造工艺的状态的半导体制造装置和方法和装置
公开(公告)号：US20060073619A1
公开(公告)日：2006-04-06
申请号：US11293213
申请日：2005-12-05
申请人： Tatehito Usui , Motohiko Yoshigai , Tsuyoshi Yoshida , Hideyuki Yamamoto
发明人： Tatehito Usui , Motohiko Yoshigai , Tsuyoshi Yoshida , Hideyuki Yamamoto
IPC分类号： H01L21/00 , H01L21/306 , C23F1/00
CPC分类号： H01J37/32935 , H01L21/31116
摘要： In a semiconductor device fabrication apparatus for performing an etching process for a semiconductor wafer having a plurality of films formed on a surface thereof and disposed in a chamber, by using plasma generated in the chamber, a change in light of multi-wavelength from the surface of the semiconductor wafer is measured during a predetermined period of the etching process, and a state of the etching process is judged from the displayed change amount of light of multi-wavelength.
摘要翻译：在半导体器件制造装置中，通过使用在室内产生的等离子体，对具有形成在其表面上的多个膜并且设置在室中的半导体晶片进行蚀刻处理，从表面的多波长的光的变化在蚀刻处理的预定周期期间测量半导体晶片，并且根据所显示的多波长的光的变化量来判断蚀刻处理的状态。

50. 发明授权

US07009715B2 Method and apparatus for determining endpoint of semiconductor element fabricating process and method and apparatus for processing member to be processed 有权
公开(公告)号：US07009715B2
公开(公告)日：2006-03-07
申请号：US10978412
申请日：2004-11-02
申请人： Tatehito Usui , Takashi Fujii , Motohiko Yoshigai , Tetsunori Kaji , Hideyuki Yamamoto
发明人： Tatehito Usui , Takashi Fujii , Motohiko Yoshigai , Tetsunori Kaji , Hideyuki Yamamoto
IPC分类号： G01B9/02
CPC分类号： H01J37/32963 , G01B11/0675 , H01L22/26
摘要： Standard patterns of differential values of interference light that correspond to a predetermined step height of the first material being processed and standard patterns of differential values of interference light that correspond to a predetermined remaining mask layer thickness of the material are set. These standard patterns use wavelengths as parameters. Then, the intensities of interference light of multiple wavelengths are measured for a second material that has the same structure as the first material. Actual patterns with wavelength as parameter are determined from differential values of the measured interference light intensities. Based on the standard patterns and the actual patterns of the differential values, the step height and the remaining mask layer thickness of the second material are determined.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式