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1. 发明申请

US20070056929A1 Plasma etching apparatus and plasma etching method 失效
标题翻译：等离子体蚀刻装置和等离子体蚀刻方法
公开(公告)号：US20070056929A1
公开(公告)日：2007-03-15
申请号：US11362867
申请日：2006-02-28
申请人： Go Miya , Seiichiro Kanno , Naoshi Itabashi , Motohiko Yoshigai , Junichi Tanaka , Masahito Mori , Naoyuki Kofuji , Go Saito
发明人： Go Miya , Seiichiro Kanno , Naoshi Itabashi , Motohiko Yoshigai , Junichi Tanaka , Masahito Mori , Naoyuki Kofuji , Go Saito
IPC分类号： C23F1/00 , G01L21/30 , H01L21/306 , H01L21/302 , G01R31/00
CPC分类号： H01L21/67069 , H01J37/32449 , H01J37/32935 , H01L21/32137 , H01L21/67248 , H01L21/67253
摘要： A plasma etching apparatus includes a processing chamber in which a specimen is subjected to plasma processing, a specimen holder for holding the specimen, the specimen holder including a temperature controller for controlling temperatures at at least 2 positions of the specimen, at least two gas supply sources for supplying processing gases, at least two gas inlets for introducing the processing gases into the processing chamber, a regulator for independently controlling the compositions or the flow rates of the processing gases introduced from the at least two gas inlets and the temperatures controlled with at least two temperature controllers in the specimen holder, and an electromagnetic wave supply unit for sending an electromagnetic wave into the processing chamber, wherein the compositions or the flow rates of the processing gases introduced from the gas inlets and the temperature controlled with the temperature controllers in the specimen holder are independently controlled.
摘要翻译：一种等离子体蚀刻装置，包括：处理室，其中试样经受等离子体处理;试样保持器，用于保持试样;试样架包括用于控制试样至少2个位置的温度的温度控制器，至少两个气体供应用于提供处理气体的源，用于将处理气体引入处理室的至少两个气体入口，用于独立地控制从至少两个气体入口引入的处理气体的组成或流速的调节器和由样品架中的至少两个温度控制器和用于将电磁波发送到处理室中的电磁波供给单元，其中从气体入口引入的处理气体的组成或流速以及用温度控制器控制的温度样品架独立控制。

2. 发明授权

US07396771B2 Plasma etching apparatus and plasma etching method 失效
标题翻译：等离子体蚀刻装置和等离子体蚀刻方法
公开(公告)号：US07396771B2
公开(公告)日：2008-07-08
申请号：US11362867
申请日：2006-02-28
申请人： Go Miya , Seiichiro Kanno , Naoshi Itabashi , Motohiko Yoshigai , Junichi Tanaka , Masahito Mori , Naoyuki Kofuji , Go Saito
发明人： Go Miya , Seiichiro Kanno , Naoshi Itabashi , Motohiko Yoshigai , Junichi Tanaka , Masahito Mori , Naoyuki Kofuji , Go Saito
IPC分类号： H01L21/461 , H01L21/302
CPC分类号： H01L21/67069 , H01J37/32449 , H01J37/32935 , H01L21/32137 , H01L21/67248 , H01L21/67253
摘要： A plasma etching apparatus includes a processing chamber in which a specimen is subjected to plasma processing, a specimen holder for holding the specimen, the specimen holder including a temperature controller for controlling temperatures at at least 2 positions of the specimen, at least two gas supply sources for supplying processing gases, at least two gas inlets for introducing the processing gases into the processing chamber, a regulator for independently controlling the compositions or the flow rates of the processing gases introduced from the at least two gas inlets and the temperatures controlled with at least two temperature controllers in the specimen holder, and an electromagnetic wave supply unit for sending an electromagnetic wave into the processing chamber, wherein the compositions or the flow rates of the processing gases introduced from the gas inlets and the temperature controlled with the temperature controllers in the specimen holder are independently controlled.
摘要翻译：一种等离子体蚀刻装置，包括：处理室，其中试样经受等离子体处理;试样保持器，用于保持试样;试样架包括用于控制试样至少2个位置的温度的温度控制器，至少两个气体供应用于提供处理气体的源，用于将处理气体引入处理室的至少两个气体入口，用于独立地控制从至少两个气体入口引入的处理气体的组成或流速的调节器和由样品架中的至少两个温度控制器和用于将电磁波发送到处理室中的电磁波供给单元，其中从气体入口引入的处理气体的组成或流速以及用温度控制器控制的温度样品架独立控制。

3. 发明申请

US20060169671A1 Plasma etching apparatus and plasma etching method 审中-公开
标题翻译：等离子体蚀刻装置和等离子体蚀刻方法
公开(公告)号：US20060169671A1
公开(公告)日：2006-08-03
申请号：US11072305
申请日：2005-03-07
申请人： Go Miya , Junichi Tanaka , Seiichiro Kanno , Akitaka Makino , Motohiko Yoshigai
发明人： Go Miya , Junichi Tanaka , Seiichiro Kanno , Akitaka Makino , Motohiko Yoshigai
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： H01L21/67069 , H01J37/3244 , H01J37/32449 , H01L21/32137
摘要： To provide a plasma etching apparatus that achieves a high in-plane uniformity of the CD shift. A plasma etching apparatus includes: a process chamber 26 in which a plasma etching process is performed on a process target object 1; A first gas supply source 100 for supplying a first process gas; a second gas supply source 110 for supplying a second process gas; a first gas introduction area 42-1 having a first gas introduction port for introducing the first process gas into the process chamber 26; a second gas introduction area 42-2 having a second gas introduction port 3 for introducing the second process gas into the process chamber 26; flow controllers 102, 113 for adjusting the flow rates of the process gasses; and a gas flow divider 120 for dividing the process gas into a plurality of gas flows, in which the first gas introduction port and the second gas introduction port are provided substantially in the same plane, and the first gas introduction area 42-1 and the second gas introduction area 42-2 are separated from each other.
摘要翻译：提供一种实现CD偏移的高平面内均匀性的等离子体蚀刻装置。等离子体蚀刻装置包括：对处理对象物1进行等离子体蚀刻处理的处理室26; 用于供应第一处理气体的第一气体供应源100; 用于供应第二处理气体的第二气体供应源110; 具有用于将第一处理气体引入到处理室26中的第一气体导入口的第一气体导入区域42-1; 具有用于将第二处理气体引入到处理室26中的第二气体导入口3的第二气体导入区域42-2; 流量控制器102,113，用于调节过程气体的流量; 以及用于将处理气体分成多个气流的气体分流器120，其中第一气体导入口和第二气体导入口基本上设置在同一平面上，第一气体导入区域42-1和第二气体导入区域42-2彼此分离。

4. 发明申请

US20060043064A1 Plasma processing system and method 审中-公开
标题翻译：等离子体处理系统及方法
公开(公告)号：US20060043064A1
公开(公告)日：2006-03-02
申请号：US10934383
申请日：2004-09-07
申请人： Junichi Tanaka , Takehisa Iwakoshi , Seiichiro Kanno , Go Miya , Motohiko Yoshigai
发明人： Junichi Tanaka , Takehisa Iwakoshi , Seiichiro Kanno , Go Miya , Motohiko Yoshigai
IPC分类号： C23F1/00 , G01L21/30
CPC分类号： H01J37/32972 , G01N21/68 , G01N2021/8416 , H01J37/32449 , H01J37/32935
摘要： A plasma processing system includes a process chamber equipped with a gas supply unit, a gas exhaust and an electromagnetic energy supply unit for generating plasma from process gasses, thereby subjecting a specimen placed on a specimen stage to a plasma process. The system includes a spectrometer detecting a spectrum of plasma emission generated in the chamber, flow controllers controlling flow rates of process gasses to be supplied, and a controller controlling the flow controllers. The controller includes a calculation unit for calculating an amount of reaction byproducts generated in the chamber, in accordance with the spectrum of the plasma emission detected with the spectrometer and an input unit for inputting a target timeline of the amount of reaction byproducts, and controls amounts of the process gasses such that a calculation result of the amount of reaction byproducts becomes coincident with the input target timeline.
摘要翻译：等离子体处理系统包括具有气体供给单元，排气口和用于从工艺气体产生等离子体的电磁能量供给单元的处理室，从而使放置在试样台上的试样进行等离子体处理。该系统包括检测在室中产生的等离子体发射光谱的光谱仪，控制要供应的过程气体的流量的流量控制器和控制流量控制器的控制器。控制器包括：计算单元，用于根据用光谱仪检测的等离子体发射光谱和用于输入反应副产物的量的目标时间线的输入单元计算室内产生的反应副产物的量，并控制量的过程气体，使得反应副产物的量的计算结果与输入的目标时间线一致。

5. 发明申请

US20080110569A1 PLASMA ETCHING APPARATUS AND PLASMA ETCHING METHOD 审中-公开
标题翻译：等离子体蚀刻装置和等离子体蚀刻方法
公开(公告)号：US20080110569A1
公开(公告)日：2008-05-15
申请号：US11682382
申请日：2007-03-06
申请人： Go Miya , Junichi Tanaka , Seiichiro Kanno , Naoshi Itabashi , Hiroshi Akiyama , Kouhei Satou
发明人： Go Miya , Junichi Tanaka , Seiichiro Kanno , Naoshi Itabashi , Hiroshi Akiyama , Kouhei Satou
IPC分类号： C23F1/00
CPC分类号： H01L21/67069 , H01J37/32935 , H01J37/32972
摘要： The invention provides a method and apparatus for performing plasma etching to form a gate electrode on a large-scale substrate while ensuring the in-plane uniformity of the CD shift of the gate electrode. The present invention measures a radical density distribution of plasma in the processing chamber, feeds processing gases into the processing chamber through multiple locations and controls either the flow rates or compositions of the respective processing gases or the in-plane temperature distribution of a stage on which the substrate is placed, or feeds processing gases into the processing chamber through multiple locations and controls both the flow rates or compositions of the processing gases and the in-plane temperature distribution of the stage on which the substrate is placed.
摘要翻译：本发明提供了一种用于在确保栅电极的CD偏移的面内均匀性的同时在大尺寸基板上进行等离子体蚀刻以形成栅电极的方法和装置。本发明测量处理室中的等离子体的自由基密度分布，通过多个位置将处理气体进料到处理室中，并且控制各个处理气体的流速或组成或其上的平面上的温度分布衬底被放置或者通过多个位置将处理气体进料到处理室中，并控制处理气体的流速或组成以及放置衬底的阶段的面内温度分布。

6. 发明申请

US20060191482A1 Apparatus and method for processing wafer 审中-公开
标题翻译：晶圆处理装置及方法
公开(公告)号：US20060191482A1
公开(公告)日：2006-08-31
申请号：US11074717
申请日：2005-03-09
申请人： Seiichiro Kanno , Junichi Tanaka , Go Miya , Tsunehiko Tsubone , Akitaka Makino , Toshio Masuda
发明人： Seiichiro Kanno , Junichi Tanaka , Go Miya , Tsunehiko Tsubone , Akitaka Makino , Toshio Masuda
IPC分类号： C23C16/00
CPC分类号： H01L21/32137 , H01J37/32935 , H01J37/3299 , H01J2237/2001 , H01L21/67069 , H01L21/67109
摘要： A wafer processing apparatus capable of obtaining a uniform CD distribution within a wafer is provided. The wafer processing apparatus comprises at least two separate circuits of temperature regulating means provided in a wafer stage, a plurality of cooling gas pressure regulating means for feeding cooling gas between the semiconductor wafer and the wafer stage, means for regulating heater input power, and a control computer. The control computer receives input of line width dimensions resulting from processes in an arbitrary plurality of temperature conditions obtained by changing at least one of the conditions of the temperature of the temperature regulating agent, the cooling gas pressure, and the input power of the heater. The line width dimensions are used to calculate, and control, at least one of the temperature of the temperature regulating agent, the cooling gas pressure, and the input power of the heater for obtaining an arbitrary etching line width dimension.
摘要翻译：提供能够在晶片内获得均匀的CD分布的晶片处理装置。晶片处理装置包括设置在晶片台中的温度调节装置的至少两个分离电路，用于在半导体晶片和晶片台之间供给冷却气体的多个冷却气体压力调节装置，用于调节加热器输入功率的装置和控制电脑。控制计算机接收由通过改变温度调节剂的温度，冷却气体压力和加热器的输入功率的至少一个条件而获得的任意多个温度条件下的处理产生的线宽尺寸的输入。线宽尺寸用于计算和控制温度调节剂的温度，冷却气体压力和加热器的输入功率中的至少一个，以获得任意的蚀刻线宽度尺寸。

7. 发明授权

US06916396B2 Etching system and etching method 有权
标题翻译：蚀刻系统和蚀刻方法
公开(公告)号：US06916396B2
公开(公告)日：2005-07-12
申请号：US10224652
申请日：2002-08-21
申请人： Akira Kagoshima , Motohiko Yoshigai , Hideyuki Yamamoto , Daisuke Shiraishi , Junichi Tanaka , Kenji Tamaki , Natsuyo Morioka
发明人： Akira Kagoshima , Motohiko Yoshigai , Hideyuki Yamamoto , Daisuke Shiraishi , Junichi Tanaka , Kenji Tamaki , Natsuyo Morioka
IPC分类号： H01L21/3065 , H01L21/00 , H01L21/3213 , H01L21/66 , H05H1/00
CPC分类号： H01L21/67253 , G05B2219/45212 , H01J37/32935 , H01L21/32137 , H01L22/20
摘要： An etching system for subjecting a single film to be etched to etching involves a plurality of etching steps in which respective different recipes are applied. The etching system employs recipe generating means which fixes the recipe to be applied to the final etching step, affecting an underlying film making contact with the film to be etched, of the etching steps, to a preset recipe, and which generates a recipe to be applied to the residual etching step on the basis of the results of processing. Etching processing is conducted according to the recipes generated by the recipe generating means.
摘要翻译：用于对单个膜进行蚀刻的蚀刻系统涉及多个蚀刻步骤，其中应用各自不同的配方。蚀刻系统使用配方生成装置，其将要应用于最终蚀刻步骤的配方固定到蚀刻步骤的下一个膜，以将蚀刻步骤的蚀刻膜与下一个膜接触到预设配方，并且生成配方基于处理结果应用于残留蚀刻步骤。根据食谱产生装置产生的配方进行蚀刻处理。

8. 发明申请

US20050236364A1 Etching system and etching method 审中-公开
标题翻译：蚀刻系统和蚀刻方法
公开(公告)号：US20050236364A1
公开(公告)日：2005-10-27
申请号：US11154698
申请日：2005-06-17
申请人： Akira Kagoshima , Motohiko Yoshigai , Hideyuki Yamamoto , Daisuke Shiraishi , Junichi Tanaka , Kenji Tamaki , Natsuyo Morioka
发明人： Akira Kagoshima , Motohiko Yoshigai , Hideyuki Yamamoto , Daisuke Shiraishi , Junichi Tanaka , Kenji Tamaki , Natsuyo Morioka
IPC分类号： H01L21/3065 , H01L21/00 , H01L21/3213 , H01L21/66 , H01L21/302
CPC分类号： H01L21/67253 , G05B2219/45212 , H01J37/32935 , H01L21/32137 , H01L22/20
摘要： An etching method for subjecting a single film to be etched to etching comprised of a plurality of etching steps based on respectively different recipes, includes steps of generating and fixing a recipe which is a preset recipe to be applied to an etching step of the plurality of etching steps which affects an underlying film making contact with the single film to be etched, generating different recipes other than the preset recipe to be applied to other etching steps of the plurality of etching steps, wherein at least one of the different recipes for the other etching steps is generated on the basis of processed results, and conducting etching of the single film according to the recipes generated.
摘要翻译：一种蚀刻方法，用于对单个膜进行蚀刻以基于各自不同的配方的多个蚀刻步骤进行的蚀刻，包括以下步骤：产生和固定作为要应用于多个蚀刻步骤的蚀刻步骤的预设配方的配方蚀刻步骤，其影响与待蚀刻的单个膜接触的底层膜，产生除了应用于多个蚀刻步骤的其它蚀刻步骤的预设配方之外的不同配方，其中至少一个不同的配方用于另一个基于处理结果产生蚀刻步骤，并根据生成的配方对单个膜进行蚀刻。

9. 发明授权

US06743733B2 Process for producing a semiconductor device including etching using a multi-step etching treatment having different gas compositions in each step 失效
标题翻译：在各工序中，使用具有不同气体成分的多步骤蚀刻处理的半导体装置的制造方法
公开(公告)号：US06743733B2
公开(公告)日：2004-06-01
申请号：US09946507
申请日：2001-09-06
申请人： Hiroyuki Kitsunai , Junichi Tanaka , Takashi Fujii , Motohiko Yoshigai
发明人： Hiroyuki Kitsunai , Junichi Tanaka , Takashi Fujii , Motohiko Yoshigai
IPC分类号： H01L21302
CPC分类号： H01L21/32137 , Y10S438/905 , Y10S438/907
摘要： By conducting etching treatment using at least two steps with different compositions of gases for each step, and at least one step comprising using a gas capable of decomposing and vaporizing etching products in an etching apparatus continuously, semicondictor devices can be produced with high productivity, low contaminant and good reproducibility of treatment state.
摘要翻译：通过使用至少两个步骤对每个步骤进行具有不同组成的气体的至少两个步骤的蚀刻处理，以及包括使用能够在蚀刻装置中连续分解和蒸发蚀刻产物的气体的至少一个步骤，可以以高生产率，低生产率生产半衰减器件污染物和处理状态的良好重复性。

10. 发明授权

US07147747B2 Plasma processing apparatus and plasma processing method 有权
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US07147747B2
公开(公告)日：2006-12-12
申请号：US10377826
申请日：2003-03-04
申请人： Go Miya , Hiroyuki Kitsunai , Junichi Tanaka , Toshio Masuda , Hideyuki Yamamoto
发明人： Go Miya , Hiroyuki Kitsunai , Junichi Tanaka , Toshio Masuda , Hideyuki Yamamoto
IPC分类号： H01L21/00 , C23C16/00
CPC分类号： G01N21/73 , H01J37/32935 , H01J37/32963 , H01L21/67253 , H05H1/0037
摘要： A plasma processing apparatus having a process chamber in which an object to be processed is subjected to plasma processing includes a light-receiving part for a spectrometer unit, an arithmetic unit, a database, a determination unit and an apparatus controller. The determination unit determines a condition in the processing chamber that an end point of seasoning is reached. The determination of the condition is performed so that one or more differences between one or more output signals derived from a batch of plasma emission data by multivariate analysis and one or more output signals derived from a preceding batch of plasma emission data are found, an average value of the differences in one batch, a difference between a maximum and a minimum of the differences in one batch and a standard deviation of the differences in one batch are determined, and the values are compared with a preset threshold.
摘要翻译：一种具有处理室的等离子体处理装置，其中待处理物体经受等离子体处理，其包括用于分光计单元的光接收部分，运算单元，数据库，确定单元和装置控制器。确定单元确定处理室中达到调味品终点的状态。执行条件的确定，使得发现通过多变量分析从一批等离子体发射数据得到的一个或多个输出信号与从前一批等离子体发射数据得到的一个或多个输出信号之间的一个或多个差异，平均值确定一批中的差异值，确定一批中的差异的最大值和最小值之间的差异以及一批中的差异的标准偏差，并将该值与预设阈值进行比较。

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