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1. 发明授权

US06660647B1 Method for processing surface of sample 失效
标题翻译：样品表面处理方法
公开(公告)号：US06660647B1
公开(公告)日：2003-12-09
申请号：US09646012
申请日：2001-01-11
申请人： Tetsuo Ono , Takafumi Tokunaga , Tadashi Umezawa , Motohiko Yoshigai , Tatsumi Mizutani , Tokuo Kure , Masayuki Kojima , Takashi Sato , Yasushi Goto
发明人： Tetsuo Ono , Takafumi Tokunaga , Tadashi Umezawa , Motohiko Yoshigai , Tatsumi Mizutani , Tokuo Kure , Masayuki Kojima , Takashi Sato , Yasushi Goto
IPC分类号： H01L2100
CPC分类号： H01J37/32082 , H01L21/32136 , H01L21/32139
摘要： A surface processing method of a sample having a mask layer that does not contain carbon as a major component formed on a substance to be processed, the substance being a metal, semiconductor and insulator deposited on a silicon substrate, includes the steps of installing the sample on a sample board in a vacuum container, generating a plasma that consists of a mixture of halogen gas and adhesive gas inside the vacuum container, applying a radio frequency bias voltage having a frequency ranging from 200 kHz to 20 MHz on the sample board, and controlling a periodic on-off of the radio frequency bias voltage with an on-off control frequency ranging from 100 Hz to 10 kHz.
摘要翻译：具有在被处理物质上形成的不含有碳作为主要成分的掩模层的样品的表面处理方法，该物质是沉积在硅基板上的金属，半导体和绝缘体，该物质包括如下步骤：在真空容器中的样品板上，在真空容器内产生由卤素气体和粘合气体的混合物构成的等离子体，在样品板上施加频率范围为200kHz〜20MHz的射频偏置电压，以从100Hz到10kHz的开关控制频率来控制射频偏置电压的周期性的断开。

2. 发明授权

US07259104B2 Sample surface processing method 失效
标题翻译：样品表面处理方法
公开(公告)号：US07259104B2
公开(公告)日：2007-08-21
申请号：US10671608
申请日：2003-09-29
申请人： Tetsuo Ono , Takafumi Tokunaga , Tadashi Umezawa , Motohiko Yoshigai , Tatsumi Mizutani , Tokuo Kure , Masayuki Kojima , Takashi Sato , Yasushi Goto
发明人： Tetsuo Ono , Takafumi Tokunaga , Tadashi Umezawa , Motohiko Yoshigai , Tatsumi Mizutani , Tokuo Kure , Masayuki Kojima , Takashi Sato , Yasushi Goto
IPC分类号： H01L21/302 , B44C1/22
CPC分类号： H01J37/32082 , H01L21/32136 , H01L21/32139
摘要： A surface processing method of a sample having a mask layer that does not contain carbon as a major component formed on a substance to be processed, the substance being a metal, semiconductor and insulator deposited on a silicon substrate, includes the steps of installing the sample on a sample board in a vacuum container, generating a plasma that consists of a mixture of halogen gas and adhesive gas inside the vacuum container, applying a radio frequency bias voltage having a frequency ranging from 200 kHz to 20 MHz on the sample board, and controlling a periodic on-off of the radio frequency bias voltage with an on-off control frequency ranging from 100 Hz to 10 kHz.
摘要翻译：具有在被处理物质上形成的不含有碳作为主要成分的掩模层的样品的表面处理方法，该物质是沉积在硅基板上的金属，半导体和绝缘体，该物质包括如下步骤：在真空容器中的样品板上，在真空容器内产生由卤素气体和粘合气体的混合物构成的等离子体，在样品板上施加频率范围为200kHz〜20MHz的射频偏置电压，以从100Hz到10kHz的开关控制频率来控制射频偏置电压的周期性的断开。

3. 发明授权

US06677244B2 Specimen surface processing method 有权
标题翻译：试样表面处理方法
公开(公告)号：US06677244B2
公开(公告)日：2004-01-13
申请号：US10135516
申请日：2002-05-01
申请人： Tetsuo Ono , Yasuhiro Nishimori , Takashi Sato , Naoyuki Kofuji , Masaru Izawa , Yasushi Goto , Ken Yoshioka , Hideyuki Kazumi , Tatsumi Mizutani , Tokuo Kure , Masayuki Kojima , Takafumi Tokunaga , Motohiko Yoshigai
发明人： Tetsuo Ono , Yasuhiro Nishimori , Takashi Sato , Naoyuki Kofuji , Masaru Izawa , Yasushi Goto , Ken Yoshioka , Hideyuki Kazumi , Tatsumi Mizutani , Tokuo Kure , Masayuki Kojima , Takafumi Tokunaga , Motohiko Yoshigai
IPC分类号： H01L21302
CPC分类号： H01J37/32082 , H01L21/32136
摘要： A plasma processing method for etching a sample having a gate oxide film includes generating a plasma in a vacuum chamber using electromagnetic waves, applying an rf bias power to the sample, turning off the rf bias power before a charged voltage of the sample reaches a breakdown voltage, turning on the rf bias power after the charged voltage of the sample has substantially dropped, and repeating the turning on and off of the rf bias power to process the sample. The off-time is set at least longer than the on-time.
摘要翻译：用于蚀刻具有栅极氧化膜的样品的等离子体处理方法包括使用电磁波在真空室中产生等离子体，向样品施加rf偏置功率，在样品的充电电压达到击穿之前关闭rf偏置功率电压，在样品的充电电压基本上下降之后接通rf偏置功率，并且重复接通和关断rf偏置功率以处理样品。关闭时间至少比准时更长。

4. 发明授权

US07049243B2 Surface processing method of a specimen and surface processing apparatus of the specimen 有权
标题翻译：试样的表面处理方法和试样的表面处理装置
公开(公告)号：US07049243B2
公开(公告)日：2006-05-23
申请号：US10754594
申请日：2004-01-12
申请人： Tetsuo Ono , Yasuhiro Nishimori , Takashi Sato , Naoyuki Kofuji , Masaru Izawa , Yasushi Goto , Ken Yoshioka , Hideyuki Kazumi , Tatsumi Mizutani , Tokuo Kure , Masayuki Kojima , Takafumi Tokunaga , Motohiko Yoshigai
发明人： Tetsuo Ono , Yasuhiro Nishimori , Takashi Sato , Naoyuki Kofuji , Masaru Izawa , Yasushi Goto , Ken Yoshioka , Hideyuki Kazumi , Tatsumi Mizutani , Tokuo Kure , Masayuki Kojima , Takafumi Tokunaga , Motohiko Yoshigai
IPC分类号： H01L21/302
CPC分类号： H01J37/32082 , H01L21/32136
摘要： A plasma processing method for etching a sample having a gate oxide film which generates a plasma in a vacuum chamber using electromagnetic waves, applies an rf bias power to the sample, turns off the rf bias power before a charged voltage of the sample reaches a breakdown voltage of the gate oxide film, turns on the rf bias power after the charged voltage of the sample has substantially dropped and repeats the turning on and off of the rf bias power to process the sample. The off-time is set at least longer than the on-time, and the plasma is generated by continuously supplying power to enable generation of the plasma during the repeated turning on and off of the rf bias power.
摘要翻译：一种用于蚀刻具有使用电磁波在真空室中产生等离子体的栅极氧化膜的样品的等离子体处理方法，对样品施加rf偏置功率，在样品的充电电压达到击穿之前关断rf偏置功率栅极氧化膜的电压在样品的充电电压基本上下降之后导通rf偏置功率，并重复rf偏置功率的导通和截止以处理样品。关断时间至少比导通时间长，并且通过连续供电以在反复打开和关闭rf偏置功率期间产生等离子体而产生等离子体。

5. 发明授权

US06492277B1 Specimen surface processing method and apparatus 有权
标题翻译：试样表面处理方法和装置
公开(公告)号：US06492277B1
公开(公告)日：2002-12-10
申请号：US09393893
申请日：1999-09-10
申请人： Tetsuo Ono , Yasuhiro Nishimori , Takashi Sato , Naoyuki Kofuji , Masaru Izawa , Yasushi Goto , Ken Yoshioka , Hideyuki Kazumi , Tatsumi Mizutani , Tokuo Kure , Masayuki Kojima , Takafumi Tokunaga , Motohiko Yoshigai
发明人： Tetsuo Ono , Yasuhiro Nishimori , Takashi Sato , Naoyuki Kofuji , Masaru Izawa , Yasushi Goto , Ken Yoshioka , Hideyuki Kazumi , Tatsumi Mizutani , Tokuo Kure , Masayuki Kojima , Takafumi Tokunaga , Motohiko Yoshigai
IPC分类号： H01L21302
CPC分类号： H01J37/32082 , H01L21/32136
摘要： Electrical damage to semiconductor elements in the plasma etching thereof is suppressed. In processing of a fine pattern by plasma etching, the high frequency power supply to be applied to the specimen is turned off before the charge potential at a portion of the pattern reaches the breakdown voltage of the gate oxide film which is interconnected to said fine pattern, and then the high frequency power supply is turned on when the charge potential at the portion of the pattern drops substantially. This on and off control is effected in a repetitive mode of operation.
摘要翻译：抑制其等离子体蚀刻对半导体元件的电气损伤。在通过等离子体蚀刻处理精细图案时，在图案的一部分处的电荷电位达到与所述精细图案互连的栅极氧化膜的击穿电压之前，施加到样本的高频电源被关断，然后当图案部分的电荷电位基本上下降时，高频电源被接通。该开启和关闭控制以重复的操作模式进行。

6. 发明授权

US06767838B1 Method and apparatus for treating surface of semiconductor 有权
标题翻译：用于处理半导体表面的方法和装置
公开(公告)号：US06767838B1
公开(公告)日：2004-07-27
申请号：US09691119
申请日：2000-10-19
申请人： Tetsuo Ono , Tatsumi Mizutani , Ryouji Hamasaki , Tokuo Kure , Takafumi Tokunaga , Masayuki Kojima
发明人： Tetsuo Ono , Tatsumi Mizutani , Ryouji Hamasaki , Tokuo Kure , Takafumi Tokunaga , Masayuki Kojima
IPC分类号： H01L2128
CPC分类号： H01J37/32137 , C23F4/00 , H01J37/32706 , H01L21/32137
摘要： A method and apparatus of treating a surface of a sample. A sample is arranged on a stage provided in a chamber, an etching gas is continuously supplied into the chamber and a plasma is generated from the etching gas. An rf bias at a frequency of 100 kHz or higher is applied to the stage independently of the generation of the plasma, and the rf bias is modulated at a frequency of 100 Hz to 10 kHz. Thereby, a surface treatment in which a minimum feature size is 1 &mgr;m or smaller is performed on the sample.
摘要翻译：一种处理样品表面的方法和装置。将样品布置在设置在室中的台上，将蚀刻气体连续地供应到室中，并从蚀刻气体产生等离子体。频率为100kHz或更高的rf偏置与等离子体的产生无关地施加到载物台，并且以100Hz至10kHz的频率调制rf偏置。由此，对样本进行最小特征尺寸为1μm以下的表面处理。

7. 发明授权

US06849191B2 Method and apparatus for treating surface of semiconductor 有权
标题翻译：用于处理半导体表面的方法和装置
公开(公告)号：US06849191B2
公开(公告)日：2005-02-01
申请号：US09249292
申请日：1999-02-12
申请人： Tetsuo Ono , Tatsumi Mizutani , Ryouji Hamasaki , Tokuo Kure , Takafumi Tokunaga , Masayuki Kojima
发明人： Tetsuo Ono , Tatsumi Mizutani , Ryouji Hamasaki , Tokuo Kure , Takafumi Tokunaga , Masayuki Kojima
IPC分类号： C23F4/00 , H01L21/3213 , H01L21/00
CPC分类号： H01J37/32137 , C23F4/00 , H01J37/32706 , H01L21/32137
摘要： According to the present invention, there is provided a sample surface treating apparatus for processing a fine pattern by plasma etching, including a stage provided in a chamber, on which a sample to be subjected to a surface treatment is placed; etching gas supply source for continuously supplying an etching gas for plasma generation into the chamber; a plasma generator for generating a high-density plasma in the chamber; a bias power supply for applying a bias voltage of 100 kHz or higher to the stage independently of the plasma generation; and a pulse modulator for modulating the bias power supply at a frequency of 100 Hz to 10 kHz, wherein a surface treatment in which the minimum feature size is 1 μm or smaller is performed on the sample placed on the stage.
摘要翻译：根据本发明，提供了一种用于通过等离子体蚀刻处理精细图案的样品表面处理装置，包括设置在其中放置待进行表面处理的样品的室中的台阶; 蚀刻气体供给源，用于将用于等离子体产生的蚀刻气体连续地供应到所述室中; 用于在所述室中产生高密度等离子体的等离子体发生器; 偏置电源，用于独立于等离子体产生而向所述载台施加100kHz或更高的偏置电压; 以及用于以100Hz至10kHz的频率调制偏置电源的脉冲调制器，其中对放置在载物台上的样品执行最小特征尺寸为1um或更小的表面处理。

8. 发明授权

US06191045B1 Method of treating surface of sample 有权
标题翻译：处理样品表面的方法
公开(公告)号：US06191045B1
公开(公告)日：2001-02-20
申请号：US09302438
申请日：1999-04-30
申请人： Motohiko Yoshigai , Hiroshi Hasegawa , Hiroshi Akiyama , Takafumi Tokunaga , Tadashi Umezawa , Masayuki Kojima , Kazuo Nojiri , Hiroshi Kawakami , Kunihiko Katou
发明人： Motohiko Yoshigai , Hiroshi Hasegawa , Hiroshi Akiyama , Takafumi Tokunaga , Tadashi Umezawa , Masayuki Kojima , Kazuo Nojiri , Hiroshi Kawakami , Kunihiko Katou
IPC分类号： H01L2100
CPC分类号： H01L21/67069 , H01L21/32136 , H01L21/32137
摘要： In order to provide a method of treating a multilayer including metal and polysilicon for use in a conductor or a gate electrode of a semiconductor device with high accuracy at a high selectivity, the temperature of a sample is maintained at 100° C. or higher at the time of etching a metal film to increase the etch rate of the metal film. In order to suppress the etch rate of a polysilicon film and prevent side etching, an oxygen gas is added to a gas containing a halogen element. In order to suppress the etch rate of a silicon oxide film at the time of etching the polysilicon film, the etching is performed with etch parameters which are divided into those for the metal film and those for the polysilicon film. In the etching performed to the multilayer containing metal and polysilicon, by etching the metal film at a high temperature of 100° C. or higher, the etch rate of the metal film becomes high. Consequently, there is no partial etch residue of the metal film and a barrier film. By switching the parameters to those with which the polysilicon film can be etched at a high selectivity with respect to an oxide film at the time point of completion of etching to the barrier film, very accurate treatment can be realized.
摘要翻译：为了提供以高选择性以高精度处理用于半导体器件的导体或栅电极的金属和多晶硅的多层的方法，将样品的温度保持在100℃以上蚀刻金属膜以增加金属膜的蚀刻速率的时间。为了抑制多晶硅膜的蚀刻速度并防止侧面蚀刻，将氧气添加到含有卤素元素的气体中。为了抑制蚀刻多晶硅膜时的氧化硅膜的蚀刻速率，用蚀刻参数进行蚀刻，蚀刻参数分为金属膜和多晶硅膜蚀刻参数。在对多层容纳金属和多晶硅进行的蚀刻中，通过在100℃以上的高温下蚀刻金属膜，金属膜的蚀刻速度变高。因此，不存在金属膜和阻挡膜的部分蚀刻残留。通过在对阻挡膜的蚀刻完成时刻将参数切换为能够以相对于氧化膜的高选择性蚀刻多晶硅膜的参数，可以实现非常精确的处理。

9. 发明授权

US5972862A Cleaning liquid for semiconductor devices 失效
标题翻译：半导体器件清洗液
公开(公告)号：US5972862A
公开(公告)日：1999-10-26
申请号：US901475
申请日：1997-07-28
申请人： Yoshimi Torii , Shunji Sasabe , Masayuki Kojima , Kazuhisa Usuami , Takafumi Tokunaga , Kazusato Hara , Yoshikazu Ohira , Tsuyoshi Matsui , Hideto Gotoh , Tetsuo Aoyama , Ryuji Hasemi , Hidetoshi Ikeda , Fukusaburo Ishihara , Ryuji Sotoaka
发明人： Yoshimi Torii , Shunji Sasabe , Masayuki Kojima , Kazuhisa Usuami , Takafumi Tokunaga , Kazusato Hara , Yoshikazu Ohira , Tsuyoshi Matsui , Hideto Gotoh , Tetsuo Aoyama , Ryuji Hasemi , Hidetoshi Ikeda , Fukusaburo Ishihara , Ryuji Sotoaka
IPC分类号： C11D7/60 , G03F7/42 , H01L21/02 , H01L21/302 , H01L21/304 , H01L21/3065 , H01L21/3213 , C11D1/62 , C11D3/44 , C11D7/08
CPC分类号： H01L21/02071 , G03F7/423 , G03F7/425 , H01L21/02063 , Y10S438/974
摘要： There is disclosed a cleaning liquid for producing a semiconductor device which comprises (A) fluorine-containing compound; (B) water-soluble or water-miscible organic solvent; and (C) inorganic acid and/or organic acid, optionally, further comprises (D) quaternary ammonium salt or (D') a specific organic carboxylic acid ammonium salt and/or an organic carboxylic acid amine salt; as well as a process for producing a semiconductor device by forming a resist pattern on a substrate equipped on the surface with an insulating film layer or a metallic electroconductive layer, forming a via hole or electric wiring by dry etching, removing the resist pattern by ashing treatment with oxygen plasma; and effecting an cleaning treatment with the above cleaning liquid. The above cleaning liquid and production process can readily remove the deposit polymer formed in the case of dry etching without impairing metallic film and insulating film.
摘要翻译：公开了一种用于制造半导体器件的清洗液，其包含（A）含氟化合物; （B）水溶性或水混溶性有机溶剂; 和（C）无机酸和/或有机酸，任选地还包含（D）季铵盐或（D'）特定的有机羧酸铵盐和/或有机羧酸胺盐; 以及通过在表面上配置有绝缘膜层或金属导电层的基板上形成抗蚀剂图案来制造半导体器件的方法，通过干蚀刻形成通孔或电布线，通过灰化除去抗蚀剂图案用氧等离子体处理; 并用上述清洗液进行清洗处理。上述清洗液和制造方法可以容易地除去在干蚀刻的情况下形成的沉积聚合物，而不损害金属膜和绝缘膜。

10. 发明申请

US20100132392A1 INDOOR UNIT OF AIR CONDITIONER 失效
标题翻译：空调室内单位
公开(公告)号：US20100132392A1
公开(公告)日：2010-06-03
申请号：US12095107
申请日：2006-11-26
申请人： Masanao Yasutomi , Masayuki Kojima , Masuzou Takahashi , Toshihiro Wakamatsu
发明人： Masanao Yasutomi , Masayuki Kojima , Masuzou Takahashi , Toshihiro Wakamatsu
IPC分类号： F25D21/14 , F25D17/06
CPC分类号： F24F1/0007 , F24F1/0025 , F24F13/222
摘要： Grooves are formed on a back surface 22 of a tongue part 21 of a rear plate 3 which surface does not guide a flow of air.
摘要翻译：凹槽形成在后板3的舌部21的后表面22上，该表面不引导空气流。

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