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1. 发明授权

US06743733B2 Process for producing a semiconductor device including etching using a multi-step etching treatment having different gas compositions in each step 失效
标题翻译：在各工序中，使用具有不同气体成分的多步骤蚀刻处理的半导体装置的制造方法
公开(公告)号：US06743733B2
公开(公告)日：2004-06-01
申请号：US09946507
申请日：2001-09-06
申请人： Hiroyuki Kitsunai , Junichi Tanaka , Takashi Fujii , Motohiko Yoshigai
发明人： Hiroyuki Kitsunai , Junichi Tanaka , Takashi Fujii , Motohiko Yoshigai
IPC分类号： H01L21302
CPC分类号： H01L21/32137 , Y10S438/905 , Y10S438/907
摘要： By conducting etching treatment using at least two steps with different compositions of gases for each step, and at least one step comprising using a gas capable of decomposing and vaporizing etching products in an etching apparatus continuously, semicondictor devices can be produced with high productivity, low contaminant and good reproducibility of treatment state.
摘要翻译：通过使用至少两个步骤对每个步骤进行具有不同组成的气体的至少两个步骤的蚀刻处理，以及包括使用能够在蚀刻装置中连续分解和蒸发蚀刻产物的气体的至少一个步骤，可以以高生产率，低生产率生产半衰减器件污染物和处理状态的良好重复性。

2. 发明申请

US20080257863A1 PLASMA PROCESSING APPARATUS AND METHOD FOR STABILIZING INNER WALL OF PROCESSING CHAMBER 审中-公开
标题翻译：等离子体加工装置和方法，用于稳定加工室内壁
公开(公告)号：US20080257863A1
公开(公告)日：2008-10-23
申请号：US11849264
申请日：2007-08-31
申请人： Hiroyuki Kitsunai , Naoshi Itabashi , Motohiko Yoshigai , Tetsuo Ono
发明人： Hiroyuki Kitsunai , Naoshi Itabashi , Motohiko Yoshigai , Tetsuo Ono
IPC分类号： C23F1/00
CPC分类号： H01J37/32477 , B08B7/0035 , H01J37/32935
摘要： A plasma processing apparatus is disclosed for removing the deposition film in the processing chamber and suppressing the corrosion of wall surface material. The plasma processing apparatus includes a plasma generating means, a monitor means for detecting the existence of a reaction product containing a material constituting an inner wall of the processing chamber, and an alarm means for notifying that the existence of the reaction product containing the material constituting the inner wall of the processing chamber has exceeded a predetermined amount. The plasma processing apparatus is configured such that plasma cleaning is performed for every arbitrary etching process, and a wall surface stabilization process is subsequently performed using O2 gas or F gas.
摘要翻译：公开了一种用于去除处理室中的沉积膜并抑制壁表面材料的腐蚀的等离子体处理装置。等离子体处理装置包括等离子体产生装置，用于检测含有构成处理室内壁的材料的反应产物的存在的监视装置，以及用于通知含有构成材料的反应产物的存在的报警装置处理室的内壁已经超过预定量。等离子体处理装置被配置为使得对于每个任意蚀刻工艺进行等离子体清洗，并且随后使用O 2气体或F气体执行壁表面稳定处理。

3. 发明申请

US20050072444A1 Method for processing plasma processing apparatus 审中-公开
标题翻译：等离子体处理装置的处理方法
公开(公告)号：US20050072444A1
公开(公告)日：2005-04-07
申请号：US10791856
申请日：2004-03-04
申请人： Shigeru Shirayone , Tetsuo Ono , Naoshi Itabashi , Motohiko Yoshigai , Takahiro Abe , Takahiro Shimomura , Hiroyuki Kitsunai
发明人： Shigeru Shirayone , Tetsuo Ono , Naoshi Itabashi , Motohiko Yoshigai , Takahiro Abe , Takahiro Shimomura , Hiroyuki Kitsunai
IPC分类号： B08B7/00 , H01L21/3213 , B08B3/12
CPC分类号： H01J37/32082 , B08B7/0035 , H01J2237/334 , H01L21/32136
摘要： A method for processing a plasma processing apparatus having plasma generating means 3, 8, 10, 13 through 15 for generating plasma within a processing chamber, a high-frequency power applying means 18 for applying high-frequency power to an object 17 to be processed, a processing chamber 1 to which an evacuating device 7 is connected and capable of having its interior evacuated, and a gas supply device (not shown) for the processing chamber, wherein the method comprises mounting a Si wafer 17 on an electrode 4 for holding the object to be processed, introducing hydrobromic gas and chlorine gas into the processing chamber and generating plasma, and removing the aluminum-based deposit adhered to the interior of the processing chamber.
摘要翻译：一种用于处理具有用于在处理室内产生等离子体的等离子体产生装置3,8,10,13至15的等离子体处理装置的方法，用于向要处理的物体17施加高频电力的高频电力施加装置18 ，排气装置7连接并能够将其内部抽真空的处理室1和用于处理室的气体供给装置（未示出），其中该方法包括将Si晶片17安装在用于保持的电极4上要处理的物体，将氢溴酸气体和氯气引入处理室并产生等离子体，以及去除附着在处理室内部的铝基沉积物。

4. 发明申请

US20050087297A1 Plasma processing apparatus and method for stabilizing inner wall of processing chamber 审中-公开
标题翻译：用于稳定处理室内壁的等离子体处理装置和方法
公开(公告)号：US20050087297A1
公开(公告)日：2005-04-28
申请号：US10912177
申请日：2004-08-06
申请人： Hiroyuki Kitsunai , Naoshi Itabashi , Motohiko Yoshigai , Tetsuo Ono
发明人： Hiroyuki Kitsunai , Naoshi Itabashi , Motohiko Yoshigai , Tetsuo Ono
IPC分类号： B08B7/00 , H01J37/32 , H01L21/306
CPC分类号： H01J37/32477 , B08B7/0035 , H01J37/32935
摘要： The invention aims at providing a plasma processing apparatus capable of removing the deposition film in the processing chamber and suppressing the corrosion of wall surface material. The plasma processing apparatus for subjecting an object to be processed to vacuum processing by introducing a processing gas into a processing chamber 101 and generating plasma 110 comprises plasma generating means 106 through 108, a monitor means 112 for detecting the existence of a reaction product containing a material constituting an inner wall 102 of the processing chamber, and an alarm means for notifying that the existence of the reaction product containing the material constituting the inner wall 102 of the processing chamber has exceeded a predetermined amount, wherein a plasma cleaning is performed for every arbitrary etching process, and a wall surface stabilization process is subsequently performed using O2 gas or F gas.
摘要翻译：本发明的目的是提供一种能够去除处理室中的沉积膜并抑制壁表面材料的腐蚀的等离子体处理装置。用于通过将处理气体引入处理室101并产生等离子体110来对被处理物进行真空处理的等离子体处理装置包括等离子体产生装置106至108，监测装置112，用于检测含有构成处理室的内壁102的材料，以及用于通知含有构成处理室的内壁102的材料的反应产物的存在已经超过预定量的报警装置，其中对每一个执行等离子体清洁随后使用O 2气体或F气体进行任意蚀刻处理和壁表面稳定化处理。

5. 发明授权

US06916396B2 Etching system and etching method 有权
标题翻译：蚀刻系统和蚀刻方法
公开(公告)号：US06916396B2
公开(公告)日：2005-07-12
申请号：US10224652
申请日：2002-08-21
申请人： Akira Kagoshima , Motohiko Yoshigai , Hideyuki Yamamoto , Daisuke Shiraishi , Junichi Tanaka , Kenji Tamaki , Natsuyo Morioka
发明人： Akira Kagoshima , Motohiko Yoshigai , Hideyuki Yamamoto , Daisuke Shiraishi , Junichi Tanaka , Kenji Tamaki , Natsuyo Morioka
IPC分类号： H01L21/3065 , H01L21/00 , H01L21/3213 , H01L21/66 , H05H1/00
CPC分类号： H01L21/67253 , G05B2219/45212 , H01J37/32935 , H01L21/32137 , H01L22/20
摘要： An etching system for subjecting a single film to be etched to etching involves a plurality of etching steps in which respective different recipes are applied. The etching system employs recipe generating means which fixes the recipe to be applied to the final etching step, affecting an underlying film making contact with the film to be etched, of the etching steps, to a preset recipe, and which generates a recipe to be applied to the residual etching step on the basis of the results of processing. Etching processing is conducted according to the recipes generated by the recipe generating means.
摘要翻译：用于对单个膜进行蚀刻的蚀刻系统涉及多个蚀刻步骤，其中应用各自不同的配方。蚀刻系统使用配方生成装置，其将要应用于最终蚀刻步骤的配方固定到蚀刻步骤的下一个膜，以将蚀刻步骤的蚀刻膜与下一个膜接触到预设配方，并且生成配方基于处理结果应用于残留蚀刻步骤。根据食谱产生装置产生的配方进行蚀刻处理。

6. 发明授权

US07230720B2 Film thickness measuring method of member to be processed using emission spectroscopy and processing method of the member using the measuring method 有权
标题翻译：使用发射光谱处理的部件的膜厚测量方法和使用该测量方法的部件的处理方法
公开(公告)号：US07230720B2
公开(公告)日：2007-06-12
申请号：US11256967
申请日：2005-10-25
申请人： Tatehito Usui , Takashi Fujii , Motohiko Yoshigai , Tetsunori Kaji
发明人： Tatehito Usui , Takashi Fujii , Motohiko Yoshigai , Tetsunori Kaji
IPC分类号： G01B9/02 , G01B11/02 , G01J3/45 , G01R31/26
CPC分类号： G01B11/0675 , G01B11/0625 , H01L21/67069 , H01L22/26 , Y10T436/106664
摘要： A standard pattern of a differential value of an interference light is set with respect to a predetermined film thickness of a first member to be processed. The standard pattern uses a wavelength as a parameter. Then, an intensity of an interference light of a second member to be processed, composed just like the first member, is measured with respect to each of a plurality of wavelengths so as to obtain a real pattern of an differential value of the measured interference light intensity. The real pattern also uses a wavelength as a parameter. Then, the film thickness of the second member is obtained according to the standard pattern and the real pattern of the differential value.
摘要翻译：干涉光的微分值的标准图案相对于待处理的第一部件的预定膜厚设定。标准图案使用波长作为参数。然后，对于多个波长中的每一个测量与第一构件正好相同的待处理的第二构件的干涉光的强度，以获得所测量的干涉光的差分值的实际图案强度。实际图案也使用波长作为参数。然后，根据标准图案和差分值的实际图案获得第二构件的膜厚度。

7. 发明授权

US06903826B2 Method and apparatus for determining endpoint of semiconductor element fabricating process 有权
标题翻译：用于确定半导体元件制造工艺的端点的方法和装置
公开(公告)号：US06903826B2
公开(公告)日：2005-06-07
申请号：US09946504
申请日：2001-09-06
申请人： Tatehito Usui , Takashi Fujii , Motohiko Yoshigai , Tetsunori Kaji , Hideyuki Yamamoto
发明人： Tatehito Usui , Takashi Fujii , Motohiko Yoshigai , Tetsunori Kaji , Hideyuki Yamamoto
IPC分类号： G01B11/06 , G01B9/02
CPC分类号： H01J37/32963 , G01B11/0675 , H01L22/26
摘要： Standard patterns of differential values of interference light that correspond to a predetermined step height of the first material being processed and standard patterns of differential values of interference light that correspond to a predetermined remaining mask layer thickness of the material are set. These standard patterns use wavelengths as parameters. Then, the intensities of interference light of multiple wavelengths are measured for a second material that has the same structure as the first material. Actual patterns with wavelength as parameter are determined from differential values of the measured interference light intensities. Based on the standard patterns and the actual patterns of the differential values, the step height and the remaining mask layer thickness of the second material are determined.
摘要翻译：对应于正在处理的第一材料的预定台阶高度的干涉光的差分值的标准图案和对应于材料的预定剩余掩模层厚度的干涉光的差分值的标准图案被设置。这些标准模式使用波长作为参数。然后，测量具有与第一材料相同结构的第二材料的多个波长的干涉光的强度。具有波长作为参数的实际图案由所测量的干涉光强度的差分值确定。基于标准图案和差分值的实际图案，确定第二材料的台阶高度和剩余掩模层厚度。

8. 发明申请

US20050018207A1 Film thickness measuring method of member to be processed using emission spectroscopy and processing method of the member using the measuring method 有权
标题翻译：使用发射光谱处理的部件的膜厚测量方法和使用该测量方法的部件的处理方法
公开(公告)号：US20050018207A1
公开(公告)日：2005-01-27
申请号：US10918367
申请日：2004-08-16
申请人： Tatehito Usui , Takashi Fujii , Motohiko Yoshigai , Tetsunori Kaji
发明人： Tatehito Usui , Takashi Fujii , Motohiko Yoshigai , Tetsunori Kaji
IPC分类号： G01B11/06 , H01L21/00 , H01L21/66 , G01B9/02
CPC分类号： G01B11/0675 , G01B11/0625 , H01L21/67069 , H01L22/26 , Y10T436/106664
摘要： A standard pattern of a differential value of an interference light is set with respect to a predetermined film thickness of a first member to be processed. The standard pattern uses a wavelength as a parameter. Then, an intensity of an interference light of a second member to be processed, composed just like the first member, is measured with respect to each of a plurality of wavelengths so as to obtain a real pattern of an differential value of the measured interference light intensity. The real pattern also uses a wavelength as a parameter. Then, the film thickness of the second member is obtained according to the standard pattern and the real pattern of the differential value.
摘要翻译：干涉光的微分值的标准图案相对于待处理的第一部件的预定膜厚设定。标准图案使用波长作为参数。然后，对于多个波长中的每一个测量与第一构件正好相同的待处理的第二构件的干涉光的强度，以获得所测量的干涉光的差分值的实际图案强度。实际图案也使用波长作为参数。然后，根据标准图案和差分值的实际图案获得第二构件的膜厚度。

9. 发明申请

US20070056929A1 Plasma etching apparatus and plasma etching method 失效
标题翻译：等离子体蚀刻装置和等离子体蚀刻方法
公开(公告)号：US20070056929A1
公开(公告)日：2007-03-15
申请号：US11362867
申请日：2006-02-28
申请人： Go Miya , Seiichiro Kanno , Naoshi Itabashi , Motohiko Yoshigai , Junichi Tanaka , Masahito Mori , Naoyuki Kofuji , Go Saito
发明人： Go Miya , Seiichiro Kanno , Naoshi Itabashi , Motohiko Yoshigai , Junichi Tanaka , Masahito Mori , Naoyuki Kofuji , Go Saito
IPC分类号： C23F1/00 , G01L21/30 , H01L21/306 , H01L21/302 , G01R31/00
CPC分类号： H01L21/67069 , H01J37/32449 , H01J37/32935 , H01L21/32137 , H01L21/67248 , H01L21/67253
摘要： A plasma etching apparatus includes a processing chamber in which a specimen is subjected to plasma processing, a specimen holder for holding the specimen, the specimen holder including a temperature controller for controlling temperatures at at least 2 positions of the specimen, at least two gas supply sources for supplying processing gases, at least two gas inlets for introducing the processing gases into the processing chamber, a regulator for independently controlling the compositions or the flow rates of the processing gases introduced from the at least two gas inlets and the temperatures controlled with at least two temperature controllers in the specimen holder, and an electromagnetic wave supply unit for sending an electromagnetic wave into the processing chamber, wherein the compositions or the flow rates of the processing gases introduced from the gas inlets and the temperature controlled with the temperature controllers in the specimen holder are independently controlled.
摘要翻译：一种等离子体蚀刻装置，包括：处理室，其中试样经受等离子体处理;试样保持器，用于保持试样;试样架包括用于控制试样至少2个位置的温度的温度控制器，至少两个气体供应用于提供处理气体的源，用于将处理气体引入处理室的至少两个气体入口，用于独立地控制从至少两个气体入口引入的处理气体的组成或流速的调节器和由样品架中的至少两个温度控制器和用于将电磁波发送到处理室中的电磁波供给单元，其中从气体入口引入的处理气体的组成或流速以及用温度控制器控制的温度样品架独立控制。

10. 发明申请

US20060169671A1 Plasma etching apparatus and plasma etching method 审中-公开
标题翻译：等离子体蚀刻装置和等离子体蚀刻方法
公开(公告)号：US20060169671A1
公开(公告)日：2006-08-03
申请号：US11072305
申请日：2005-03-07
申请人： Go Miya , Junichi Tanaka , Seiichiro Kanno , Akitaka Makino , Motohiko Yoshigai
发明人： Go Miya , Junichi Tanaka , Seiichiro Kanno , Akitaka Makino , Motohiko Yoshigai
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： H01L21/67069 , H01J37/3244 , H01J37/32449 , H01L21/32137
摘要： To provide a plasma etching apparatus that achieves a high in-plane uniformity of the CD shift. A plasma etching apparatus includes: a process chamber 26 in which a plasma etching process is performed on a process target object 1; A first gas supply source 100 for supplying a first process gas; a second gas supply source 110 for supplying a second process gas; a first gas introduction area 42-1 having a first gas introduction port for introducing the first process gas into the process chamber 26; a second gas introduction area 42-2 having a second gas introduction port 3 for introducing the second process gas into the process chamber 26; flow controllers 102, 113 for adjusting the flow rates of the process gasses; and a gas flow divider 120 for dividing the process gas into a plurality of gas flows, in which the first gas introduction port and the second gas introduction port are provided substantially in the same plane, and the first gas introduction area 42-1 and the second gas introduction area 42-2 are separated from each other.
摘要翻译：提供一种实现CD偏移的高平面内均匀性的等离子体蚀刻装置。等离子体蚀刻装置包括：对处理对象物1进行等离子体蚀刻处理的处理室26; 用于供应第一处理气体的第一气体供应源100; 用于供应第二处理气体的第二气体供应源110; 具有用于将第一处理气体引入到处理室26中的第一气体导入口的第一气体导入区域42-1; 具有用于将第二处理气体引入到处理室26中的第二气体导入口3的第二气体导入区域42-2; 流量控制器102,113，用于调节过程气体的流量; 以及用于将处理气体分成多个气流的气体分流器120，其中第一气体导入口和第二气体导入口基本上设置在同一平面上，第一气体导入区域42-1和第二气体导入区域42-2彼此分离。

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