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41. 发明授权

US06821909B2 Post rinse to improve selective deposition of electroless cobalt on copper for ULSI application 失效
标题翻译：后冲洗以改善无电钴在铜上的选择性沉积，用于ULSI应用
公开(公告)号：US06821909B2
公开(公告)日：2004-11-23
申请号：US10284855
申请日：2002-10-30
申请人： Sivakami Ramanathan , Deenesh Padhi , Srinivas Gandikota , Girish A. Dixit
发明人： Sivakami Ramanathan , Deenesh Padhi , Srinivas Gandikota , Girish A. Dixit
IPC分类号： H01L2131
CPC分类号： H01L21/76877 , C23C18/166 , C23C18/1831 , C23C18/1834 , C23C18/1879 , C23C18/1882 , C23C18/34 , C23C18/36 , C23C18/44 , C23C18/50 , C23G1/10 , H01L21/288 , H01L21/76814 , H01L21/76849 , H01L21/76865 , H01L21/76873 , H01L21/76874 , H01L21/76883
摘要： A method for depositing a passivation layer on a substrate surface using one or more electroplating techniques is provided. Embodiments of the method include selectively depositing an initiation layer on a conductive material by exposing the substrate surface to a first electroless solution, depositing a passivating material on the initiation layer by exposing the initiation layer to a second electroless solution, and cleaning the substrate surface with an acidic solution. In another aspect, the method includes applying ultrasonic or megasonic energy to the substrate surface during the application of the acidic solution. In still another aspect, the method includes using the acidic solution to remove between about 100 Å and about 200 Å of the passivating material. In yet another aspect, the method includes cleaning the substrate surface with a first acidic solution prior to the deposition of the initiation layer.
摘要翻译：提供了使用一种或多种电镀技术在衬底表面上沉积钝化层的方法。该方法的实施例包括通过将衬底表面暴露于第一无电解溶液来选择性地沉积引发层，通过将引发层暴露于第二无电解溶液来沉积起始层上的钝化材料，并用酸性溶液。在另一方面，该方法包括在施加酸性溶液期间将超声波或兆声波能量施加到基底表面。在另一方面，该方法包括使用酸性溶液去除大约至大约200埃的钝化材料。在另一方面，该方法包括在沉积起始层之前用第一酸性溶液清洗基底表面。

42. 发明授权

US08858763B1 Apparatus and methods for deposition and/or etch selectivity 有权
标题翻译：用于沉积和/或蚀刻选择性的装置和方法
公开(公告)号：US08858763B1
公开(公告)日：2014-10-14
申请号：US12391719
申请日：2009-02-24
申请人： Erich R. Klawuhn , Robert Rozbicki , Girish A. Dixit
发明人： Erich R. Klawuhn , Robert Rozbicki , Girish A. Dixit
IPC分类号： C23C14/34
CPC分类号： C23C14/046 , C23C14/3407 , C23C14/345 , C23C14/3492 , C23C14/35 , H01J37/32596 , H01J37/3405 , H01L21/2855 , H01L21/32131 , H01L21/76805 , H01L21/76814 , H01L21/76844 , H01L21/76868
摘要： Disclosed are apparatus and method embodiments for achieving etch and/or deposition selectivity in vias and trenches of a semiconductor wafer. That is, deposition coverage in the bottom of each via of a semiconductor wafer differs from the coverage in the bottom of each trench of such wafer. The selectivity may be configured so as to result in punch through in each via without damaging the dielectric material at the bottom of each trench or the like. In this configuration, the coverage amount deposited in each trench is greater than the coverage amount deposited in each via.
摘要翻译：公开了用于在半导体晶片的通路和沟槽中实现蚀刻和/或沉积选择性的装置和方法实施例。也就是说，半导体晶片的每个通孔的底部的沉积覆盖不同于这种晶片的每个沟槽的底部的覆盖。选择性可以被配置为导致每个通孔中的穿孔而不损坏每个沟槽等的底部处的电介质材料。在这种配置中，沉积在每个沟槽中的覆盖率大于沉积在每个通孔中的覆盖量。

43. 发明授权

US06869516B2 Method for removing electrolyte from electrical contacts and wafer touching areas 失效
标题翻译：从电触点和晶片接触区域去除电解质的方法
公开(公告)号：US06869516B2
公开(公告)日：2005-03-22
申请号：US10273539
申请日：2002-10-18
申请人： Dmitry Lubomirsky , Michael X. Yang , Girish A. Dixit , Vincent E. Burkhart , Allen L. D'Ambra , Yeuk-Fai Edwin Mok , Harald Herchen
发明人： Dmitry Lubomirsky , Michael X. Yang , Girish A. Dixit , Vincent E. Burkhart , Allen L. D'Ambra , Yeuk-Fai Edwin Mok , Harald Herchen
IPC分类号： C25D7/12 , C25D21/00 , H01L21/288 , C25D5/48
CPC分类号： C25D7/12 , C25D21/00 , H01L21/2885
摘要： A method for cleaning the electrical contact areas or substrate contact areas of an electrochemical plating contact ring is provided. Embodiments of the method include positioning a substrate on a substrate support member having one or more electrical contacts, chemically plating a metal layer on at least a portion of a surface of the substrate, removing the processed substrate from the support member, and cleaning the one or more electrical contacts with a vapor mixture comprising an alcohol. In another aspect, the method includes spraying the vapor mixture on the electrical contacts while rotating the substrate support member.
摘要翻译：提供了一种用于清洁电化学电镀接触环的电接触区域或衬底接触区域的方法。该方法的实施例包括将基板定位在具有一个或多个电触点的基板支撑构件上，在基板表面的至少一部分上化学镀覆金属层，从处理基板移除经处理的基板，并清洁该基板或更多的与包含醇的蒸汽混合物的电接触。在另一方面，该方法包括在旋转衬底支撑构件的同时将蒸气混合物喷射到电触点上。

44. 发明授权

US06297125B1 Air-bridge integration scheme for reducing interconnect delay 有权
标题翻译：降低互连延迟的气桥整合方案
公开(公告)号：US06297125B1
公开(公告)日：2001-10-02
申请号：US09233252
申请日：1999-01-19
申请人： Somnath S. Nag , Amitava Chatterjee , Girish A. Dixit
发明人： Somnath S. Nag , Amitava Chatterjee , Girish A. Dixit
IPC分类号： H01L2176
CPC分类号： H01L21/7682
摘要： Air-bridges are formed at controlled lateral separations using the extremely high HF etch rate of a gap-fill spin-on-glass such as uncured hydrogen silsequioxane (HSQ) in combination with other dielectrics having a much slower etch rate in HF. The advantages of an air-bridge system with controlled lateral separations include providing an interconnect isolation dielectric which meets all requirements for sub-0.5 micron technologies and providing a device with reduced reliability problems.
摘要翻译：使用间隙填充旋涂玻璃（例如未固化的氢硅氧烷（HSQ））的非常高的HF蚀刻速率与HF中具有慢得多的蚀刻速率的其它电介质组合，以可控的横向间隔形成空气桥。具有受控横向分离的空气桥系统的优点包括提供互补隔离电介质，其满足对于0.5微米以下技术的所有要求，并提供具有降低的可靠性问题的装置。

45. 发明授权

US6130156A Variable doping of metal plugs for enhanced reliability 有权
标题翻译：金属插头的可变掺杂可提高可靠性
公开(公告)号：US6130156A
公开(公告)日：2000-10-10
申请号：US281538
申请日：1999-03-30
申请人： Robert H. Havemann , Girish A. Dixit , Stephen W. Russell
发明人： Robert H. Havemann , Girish A. Dixit , Stephen W. Russell
IPC分类号： H01L23/52 , H01L21/28 , H01L21/3205 , H01L21/768 , H01L21/441
CPC分类号： H01L21/76843 , H01L21/76873 , H01L21/76876 , H01L21/76877 , H01L21/76886 , H01L2221/1089 , H01L23/53219 , H01L23/53233 , H01L2924/0002
摘要： A method of fabricating an interconnect wherein there is initially provided a first layer of electrically conductive interconnect (3). A via (7) is formed which is defined by walls extending to the first layer of interconnect. A layer of titanium (9) is formed between the electrically conductive interconnect and the first layer of electrically conductive metal (11). A first layer of electrically conductive metal is formed on the walls of the via having a predetermined etch rate relative to a specific etch species and a second layer of electrically conductive metal (13) is formed on the first layer of electrically conductive metal having an etch rate relative to the specific etch species greater than the first layer and which preferably extends into the via. The first layer of electrically conductive interconnect is preferably aluminum, the first layer of electrically conductive metal is preferably a metal containing from about one percent by weight to about one hundred percent copper and the rest essentially aluminum and the second layer of electrically conductive metal is preferably copper doped aluminum having a lower copper content than the first electrically conductive layer.
摘要翻译：一种制造互连的方法，其中最初提供第一层导电互连（3）。形成通孔（7），其通过延伸到第一互连层的壁限定。在导电互连和导电金属（11）的第一层之间形成一层钛（9）。第一层导电金属形成在通孔的壁上，具有相对于特定蚀刻物质的预定蚀刻速率，并且第二层导电金属（13）形成在具有蚀刻的第一导电金属层上相对于比第一层大的特定蚀刻物质的速率，并且优选地延伸到通孔中。导电互连的第一层优选为铝，第一层导电金属优选为含有约1％至约100％铜的金属，其余基本上为铝，而第二层导电金属优选为铜掺杂的铝的铜含量低于第一导电层。

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