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1. 发明申请

US20110003469A1 Methods Of Forming Memory Cells; And Methods Of Forming Vertical Structures 有权
标题翻译：形成记忆细胞的方法; 和形成垂直结构的方法
公开(公告)号：US20110003469A1
公开(公告)日：2011-01-06
申请号：US12497128
申请日：2009-07-02
申请人： David A. Kewley , Brian Cleereman , Stephen W. Russell , Rex Stone , Anthony C. Krauth
发明人： David A. Kewley , Brian Cleereman , Stephen W. Russell , Rex Stone , Anthony C. Krauth
IPC分类号： H01L21/28 , H01L21/768
CPC分类号： H01L21/32133 , H01L21/0337 , H01L21/28008 , H01L21/28273 , H01L21/28282 , H01L21/32139 , H01L27/11521 , H01L27/11524 , H01L27/11568
摘要： Some embodiments include methods of forming memory. A series of photoresist features may be formed over a gate stack, and a placeholder may be formed at an end of said series. The placeholder may be spaced from the end of said series by a gap. A layer may be formed over and between the photoresist features, over the placeholder, and within said gap. The layer may be anisotropically etched into a plurality of first vertical structures along edges of the photoresist features, and into a second vertical structure along an edge of the placeholder. A mask may be formed over the second vertical structure. Subsequently, the first vertical structures may be used to pattern string gates while the mask is used to pattern a select gate. Some embodiments include methods of forming conductive runners, and some embodiments may include semiconductor constructions.
摘要翻译：一些实施例包括形成存储器的方法。可以在栅极堆叠上形成一系列光致抗蚀剂特征，并且可以在所述串联的末端形成占位符。占位符可以通过间隙与所述系列的端部间隔开。可以在光致抗蚀剂特征之上和之间在占位符上方以及在所述间隙内形成层。该层可以沿光致抗蚀剂特征的边缘各向异性地蚀刻成多个第一垂直结构，并且沿着占位符的边缘进入第二垂直结构。可以在第二垂直结构上形成掩模。随后，可以使用第一垂直结构来模拟串门，同时使用掩模来对选择门进行图案化。一些实施例包括形成导电流道的方法，并且一些实施例可以包括半导体结构。

2. 发明授权

US07319071B2 Methods for forming a metallic damascene structure 有权
标题翻译：形成金属镶嵌结构的方法
公开(公告)号：US07319071B2
公开(公告)日：2008-01-15
申请号：US10767764
申请日：2004-01-29
申请人： Max F. Hineman , Stephen W. Russell
发明人： Max F. Hineman , Stephen W. Russell
IPC分类号： H01L21/44
CPC分类号： H01L21/76843 , H01L21/76807 , H01L21/76814 , H01L21/76879
摘要： In damascene process integration, a reducing plasma is applied after the etch stop or barrier layer is opened over a copper layer. Currently known methods for opening barrier layers suffer from the disadvantage that they cause at least some of the underlying copper to oxidize to copper oxide. Because copper oxide is selectively removed by subsequent wet cleaning, voids can form where damaged copper (e.g., copper oxide) is removed, thus compromising the reliability of metal-to-metal contact in vias. The present invention advantageously overcomes this and other disadvantages of the prior art through the use of a hydrogen plasma following the barrier layer opening step, which repairs damaged copper (e.g., reduces copper oxide to copper), thus preventing and/or diminishing defects in metal-to-metal contacts in vias and concomitantly improving the reliability of the same.
摘要翻译：在镶嵌工艺集成中，在蚀刻停止或阻挡层在铜层上打开之后施加还原等离子体。目前已知的用于打开阻挡层的方法的缺点在于它们使至少一些下面的铜氧化成氧化铜。由于随后的湿法清洗有选择地除去了氧化铜，所以可以在损坏的铜（例如氧化铜）被除去的地方形成空隙，从而损害通孔中金属对金属接触的可靠性。本发明有利地通过在阻挡层开启步骤之后使用氢等离子体来克服现有技术的这个和其他缺点，其修复损坏的铜（例如，将铜氧化物还原为铜），从而防止和/或减少金属中的缺陷金属触点，同时提高了其可靠性。

3. 发明授权

US5102574A Liquid non-aqueous detergents comprising narrow-range ethoxylates 失效
标题翻译：液体含有窄范围乙酸酯的非水溶性洗剂
公开(公告)号：US5102574A
公开(公告)日：1992-04-07
申请号：US482468
申请日：1990-02-21
申请人： Stephen W. Russell , Alan D. Tomlinson
发明人： Stephen W. Russell , Alan D. Tomlinson
IPC分类号： C11D1/72 , C11D1/825 , C11D3/39 , C11D17/00 , D06L1/02
CPC分类号： C11D3/3947 , C11D1/72 , C11D17/0004
摘要： A substantially non-aqueous liquid detergent product comprising a liquid surfactant phase and a solid phase dispersed therein, the liquid surfactant phase comprising an ethoxylated alcohol having an average of from 5 to 8 ethylene oxide (EO) groups per molecule, at least 60% having a number of ethylene oxide groups within .+-.2EO of the average and the alkyl chain distribution being such that less than 2% has a chain length of 9 or less carbon atoms, at least 90% has a chain length between 10 and 12 carbon atoms and less than 10% has a chain length of 13 or more carbon atoms, said percentages being by weight of the ethoxylated alcohol.

4. 发明授权

US08609489B2 Methods of forming memory; and methods of forming vertical structures 有权
标题翻译：形成记忆的方法以及形成垂直结构的方法
公开(公告)号：US08609489B2
公开(公告)日：2013-12-17
申请号：US13154259
申请日：2011-06-06
申请人： David A. Kewley , Brian Cleereman , Stephen W. Russell , Rex Stone , Anthony C. Krauth
发明人： David A. Kewley , Brian Cleereman , Stephen W. Russell , Rex Stone , Anthony C. Krauth
IPC分类号： H01L21/336
CPC分类号： H01L21/32133 , H01L21/0337 , H01L21/28008 , H01L21/28273 , H01L21/28282 , H01L21/32139 , H01L27/11521 , H01L27/11524 , H01L27/11568
摘要： Some embodiments include methods of forming memory. A series of photoresist features may be formed over a gate stack, and a placeholder may be formed at an end of said series. The placeholder may be spaced from the end of said series by a gap. A layer may be formed over and between the photoresist features, over the placeholder, and within said gap. The layer may be anisotropically etched into a plurality of first vertical structures along edges of the photoresist features, and into a second vertical structure along an edge of the placeholder. A mask may be formed over the second vertical structure. Subsequently, the first vertical structures may be used to pattern string gates while the mask is used to pattern a select gate. Some embodiments include methods of forming conductive runners, and some embodiments may include semiconductor constructions.
摘要翻译：一些实施例包括形成存储器的方法。可以在栅极堆叠上形成一系列光致抗蚀剂特征，并且可以在所述串联的末端形成占位符。占位符可以通过间隙与所述系列的端部间隔开。可以在光致抗蚀剂特征之上和之间在占位符上方以及在所述间隙内形成层。该层可以沿光致抗蚀剂特征的边缘各向异性地蚀刻成多个第一垂直结构，并且沿着占位符的边缘进入第二垂直结构。可以在第二垂直结构上形成掩模。随后，可以使用第一垂直结构来模拟串门，同时使用掩模来对选择门进行图案化。一些实施例包括形成导电流道的方法，并且一些实施例可以包括半导体结构。

5. 发明授权

US08568900B2 Methods for forming an enriched metal oxide surface 有权
标题翻译：形成富集金属氧化物表面的方法
公开(公告)号：US08568900B2
公开(公告)日：2013-10-29
申请号：US12146077
申请日：2008-06-25
申请人： Stephen W. Russell , Max Hineman
发明人： Stephen W. Russell , Max Hineman
IPC分类号： B32B15/00
CPC分类号： H01L21/02175 , H01L21/02244 , H01L21/02252 , H01L21/31116 , H01L21/31683 , H01L21/76888 , H01L23/53238 , H01L2924/0002 , Y10T428/1266 , Y10T428/12667 , H01L2924/00
摘要： Methods of forming a metal oxide surface that is enriched with metal oxide in its higher oxidation state are provided. A metal oxide surface that is enriched with metal oxide in its higher oxidation state is also provided.
摘要翻译：提供了形成富含金属氧化物处于更高氧化态的金属氧化物表面的方法。还提供富含金属氧化物处于更高氧化态的金属氧化物表面。

6. 发明授权

US08455341B2 Methods of forming features of integrated circuitry 有权
标题翻译：形成集成电路特征的方法
公开(公告)号：US08455341B2
公开(公告)日：2013-06-04
申请号：US12874781
申请日：2010-09-02
申请人： Stephen W. Russell , Kyle A. Armstrong
发明人： Stephen W. Russell , Kyle A. Armstrong
IPC分类号： H01L21/4763 , H01L21/3205
CPC分类号： G03F7/0035 , H01L21/0337 , H01L27/11519 , H01L27/11529 , H01L27/11546
摘要： Methods of forming features such as word lines of memory circuitry are disclosed. One such method includes forming an initial pitch multiplied feature pattern extending from a target area into only one of a first or second periphery area received on opposing sides of the target area. Thereafter, a subsequent feature pattern is formed which extends from the target array area into the other of the first or second periphery area. The initial and subsequent feature patterns may be used in forming features in an underlying material which extend from the target area to the first and second periphery areas. Other embodiments are disclosed.
摘要翻译：公开了诸如存储器电路字线之类的特征的方法。一种这样的方法包括形成从目标区域延伸到仅在目标区域的相对侧上接收的第一或第二外围区域中的一个的初始间距倍增特征图案。此后，形成随后的特征图案，其从目标阵列区域延伸到第一或第二外围区域中的另一个。初始和随后的特征图案可以用于形成从目标区域延伸到第一和第二外围区域的下层材料中的特征。公开了其他实施例。

7. 发明授权

US07396774B2 Methods for forming an enriched metal oxide surface 有权
标题翻译：形成富集金属氧化物表面的方法
公开(公告)号：US07396774B2
公开(公告)日：2008-07-08
申请号：US11487080
申请日：2006-07-14
申请人： Stephen W. Russell , Max Hineman
发明人： Stephen W. Russell , Max Hineman
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/02175 , H01L21/02244 , H01L21/02252 , H01L21/31116 , H01L21/31683 , H01L21/76888 , H01L23/53238 , H01L2924/0002 , Y10T428/1266 , Y10T428/12667 , H01L2924/00
摘要： Methods of forming a metal oxide surface that is enriched with metal oxide in its higher oxidation state are provided. A metal oxide surface that is enriched with metal oxide in its higher oxidation state is also provided.
摘要翻译：提供了形成富含金属氧化物处于更高氧化态的金属氧化物表面的方法。还提供富含金属氧化物处于更高氧化态的金属氧化物表面。

8. 发明授权

US5612429A Process for the polymerization of polymers in non-aqueous liquid media 失效
标题翻译：聚合物在非水液体介质中聚合的方法
公开(公告)号：US5612429A
公开(公告)日：1997-03-18
申请号：US420391
申请日：1995-04-12
申请人： Paul T. Kimpton , Mark P. Houghton , Stephen W. Russell
发明人： Paul T. Kimpton , Mark P. Houghton , Stephen W. Russell
IPC分类号： C08F2/04 , C08F2/08 , C08F2/32
CPC分类号： C08F2/08
摘要： Polymers can be prepared by polymerizing appropriate monomers in a substantially non-aqueous liquid medium comprising a detergent and/or an ester of a polyhydic alcohol. The invention also includes novel polymers which can be prepared by this process.
摘要翻译：可以通过在包含多元醇的洗涤剂和/或酯的基本上非水的液体介质中聚合合适的单体来制备聚合物。本发明还包括可以通过该方法制备的新型聚合物。

9. 发明授权

US4642198A Liquid bleaching compositions 失效
标题翻译：液体漂白组合物
公开(公告)号：US4642198A
公开(公告)日：1987-02-10
申请号：US727494
申请日：1985-04-26
申请人： Robert W. Humphreys , Adrian W. Walker , Robin J. Green , Stephen W. Russell
发明人： Robert W. Humphreys , Adrian W. Walker , Robin J. Green , Stephen W. Russell
IPC分类号： C11D3/39 , C11D17/00 , C11D3/395
CPC分类号： C11D17/0026 , C11D3/3947
摘要： Aqueous liquid bleaching compositions comprising a solid, particulate, substantially water-insoluble organic peroxy acid, e.g. diperoxydodecanedioic acid, stably suspended in an acidic surfactant structured liquid comprising a surfactant, an electrolyte and water in the substantial absence of a thickening agent.
摘要翻译：含水液体漂白组合物，其包含固体，颗粒状，基本上不溶于水的有机过氧酸，二过氧十二烷二酸，其基本上不存在增稠剂，稳定地悬浮在包含表面活性剂，电解质和水的酸性表面活性剂结构化液体中。

10. 发明授权

US07001848B1 Hydrogen plasma photoresist strip and polymeric residue cleanup process for oxygen-sensitive materials 有权
标题翻译：氢等离子体光刻胶条和聚合物残留物清除工艺用于氧敏感材料
公开(公告)号：US07001848B1
公开(公告)日：2006-02-21
申请号：US09199829
申请日：1998-11-25
申请人： Patricia B. Smith , David B. Aldrich , Stephen W. Russell
发明人： Patricia B. Smith , David B. Aldrich , Stephen W. Russell
IPC分类号： H01L21/302
CPC分类号： G03F7/427 , H01L21/02063 , H01L21/31138
摘要： Another embodiment of the instant invention is a method of fabricating a conductive interconnect for providing an electrical connection between a first conductor and a second conductor for an electrical device formed in a semiconductor substrate, the method comprising the steps of: forming a dielectric layer (layer 226 of FIG. 2a) on the first conductor (conductor 222 of FIG. 2a), the dielectric layer having at least one opening which exposes the first conductor; forming a layer of an oxygen-sensitive material (layer 234 of FIG. 2d) on the dielectric layer, the oxygen-sensitive material substantially filling the opening in the dielectric layer and for providing an electrical contact to the first conductor; forming a photoresist layer on the oxygen-sensitive material, the photoresist layer having a pattern so as to expose portions of the oxygen-sensitive material; removing the exposed portions of the oxygen-sensitive material on the dielectric material, the removal step causing a residue to be formed on exposed surfaces of the remaining portions of the oxygen-sensitive material; and removing the photoresist layer by subjecting the photoresist layer with a hydrogen-containing gas incorporated into a plasma.
摘要翻译：本发明的另一实施例是一种制造导电互连的方法，用于在第一导体和用于形成在半导体衬底中的电子器件的第二导体之间提供电连接，所述方法包括以下步骤：形成电介质层（层图2A的226）在第一导体（图2a的导体222）上，电介质层具有暴露第一导体的至少一个开口; 在电介质层上形成氧敏感材料层（图2d的层234），氧敏感材料基本上填充介电层中的开口并提供与第一导体的电接触; 在所述感氧材料上形成光致抗蚀剂层，所述光致抗蚀剂层具有图案以暴露所述氧敏感材料的部分; 去除电介质材料上的氧敏感材料的暴露部分，去除步骤，使残留物形成在氧敏感材料的剩余部分的暴露表面上; 以及通过将掺入等离子体的含氢气体对光致抗蚀剂层进行处理来除去光致抗蚀剂层。

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