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41. 发明授权

US5474643A Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US5474643A
公开(公告)日：1995-12-12
申请号：US169551
申请日：1993-12-20
申请人： Junichi Arami , Tamio Endo , Shiro Koyama , Kazuo Kikuchi , Teruaki Shiraishi , Isahiro Hasegawa , Keiji Horioka , Haruo Okano , Katsuya Okumura
发明人： Junichi Arami , Tamio Endo , Shiro Koyama , Kazuo Kikuchi , Teruaki Shiraishi , Isahiro Hasegawa , Keiji Horioka , Haruo Okano , Katsuya Okumura
IPC分类号： H01J37/32 , H05H1/00 , H05H11/00
CPC分类号： H01J37/32431 , H01J2237/16
摘要： A plasma processing apparatus has a process chamber for receiving an article to be processed, a monitoring window forming part of the peripheral wall of the process chamber, a pressure leading-out port, gates, and a plasma generating device for forming an electric field and generating plasma in the process chamber. The process chamber is defined by the peripheral wall having a circular cross section. Members forming parts of the peripheral wall each have an inner face continuous with the surface of the peripheral wall and curved substantially at the same radius of curvature as the surface of the peripheral wall.
摘要翻译：等离子体处理装置具有用于接收被处理物的处理室，形成处理室的周壁的一部分的监视窗口，压力输出端口，栅极和用于形成电场的等离子体产生装置，在处理室中产生等离子体。处理室由具有圆形横截面的周壁限定。形成周壁的部件的部件各自具有与周壁的表面连续的内表面，并且基本上以与周壁的表面相同的曲率半径弯曲。

42. 发明授权

US5437961A Method of manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US5437961A
公开(公告)日：1995-08-01
申请号：US263415
申请日：1994-06-21
申请人： Hiroyuki Yano , Haruo Okano , Tohru Watanabe , Keiji Horioka
发明人： Hiroyuki Yano , Haruo Okano , Tohru Watanabe , Keiji Horioka
IPC分类号： G03F7/00 , H01L21/027 , H01L21/768
CPC分类号： G03F7/0005 , H01L21/0276 , H01L21/76885 , Y10S430/151 , Y10S438/95
摘要： A method of manufacturing a semiconductor device is disclosed. The method comprises the steps of forming carbon layer on a light-reflective layer or a transparent layer formed on a light-reflective layer, forming a photosensitive resin layer on the carbon layer, selectively radiating light on the photosensitive resin layer, forming a photosensitive resin pattern by developing the photosensitive resin layer selectively irradiated with the light, forming a carbon pattern by etching the carbon layer using the photosensitive pattern as a mask, and forming a light-reflective pattern or a transparent layer pattern by etching the light-reflective layer using the photosensitive resin layer or the carbon pattern as a mask. When the light-reflective layer pattern is formed, the thickness of the carbon layer is set to be less than 100 nm. When the transparent layer pattern is formed, the thickness of the carbon layer is set to be 80 nm or more.
摘要翻译：公开了制造半导体器件的方法。该方法包括以下步骤：在形成在光反射层上的光反射层或透明层上形成碳层，在碳层上形成感光性树脂层，在感光性树脂层上选择性地照射光，形成感光性树脂通过显影选择性地照射光的感光性树脂层，通过使用感光图案作为掩模蚀刻碳层形成碳图案，并且通过使用以下方式蚀刻光反射层来形成光反射图案或透明层图案：感光性树脂层或碳图案作为掩模。当形成光反射层图案时，碳层的厚度设定为小于100nm。当形成透明层图案时，碳层的厚度设定为80nm以上。

43. 发明授权

US5356515A Dry etching method 失效
标题翻译：干蚀刻法
公开(公告)号：US5356515A
公开(公告)日：1994-10-18
申请号：US988809
申请日：1992-12-10
申请人： Yoshifumi Tahara , Yoshihisa Hirano , Masahiro Ogasawara , Isahiro Hasegawa , Keiji Horioka , Takaya Matsushita
发明人： Yoshifumi Tahara , Yoshihisa Hirano , Masahiro Ogasawara , Isahiro Hasegawa , Keiji Horioka , Takaya Matsushita
IPC分类号： H01L21/311 , H01L21/00
CPC分类号： H01L21/31116
摘要： A dry etching method which includes supplying a workpiece having an oxide portion or a nitride portion into a processing vessel, keeping said workpiece at temperatures not higher than 0.degree. C. within said processing vessel, supplying an etching gas including a first gas containing a halogen element and a second gas containing carbon having an oxidation number of less than 4 and oxygen to a region in the vicinity of the workpiece while keeping the temperature the workpiece at a level not higher than 0.degree. C., and forming a plasma of said etching gas for etching the oxide portion or the nitride portion of the workpiece with said plasma.
摘要翻译：一种干蚀刻方法，其包括将具有氧化物部分或氮化物部分的工件供应到处理容器中，将所述工件保持在所述处理容器内不高于0℃的温度，提供包括含有卤素的第一气体的蚀刻气体元素和含有氧化数小于4的碳的第二气体和氧气到工件附近的区域，同时将工件的温度保持在不高于0℃的水平，并形成所述蚀刻的等离子体用于利用所述等离子体蚀刻工件的氧化物部分或氮化物部分的气体。

44. 发明授权

US5259923A Dry etching method 失效
标题翻译：干蚀刻法
公开(公告)号：US5259923A
公开(公告)日：1993-11-09
申请号：US889627
申请日：1992-05-28
申请人： Masaru Hori , Keiji Horioka , Haruo Okano , Masao Ito , Masahito Hiratsuka , Yoshio Ishikawa
发明人： Masaru Hori , Keiji Horioka , Haruo Okano , Masao Ito , Masahito Hiratsuka , Yoshio Ishikawa
IPC分类号： H01L21/28 , H01L21/302 , H01L21/3065 , H01L21/3205 , H01L21/3213 , H01L23/52 , H01L29/423 , H01L29/43 , H01L29/49 , H01L21/306 , B44C1/22 , C03C15/00 , C23F1/00
CPC分类号： H01L21/32136 , H01L21/32137 , H01L2924/0002
摘要： A dry etching method, wherein a multilayer film including one selected from tungsten, molybdenum, and a silicide thereof, as the first layer, and polycrystal silicon as the second layer underlying is formed on a silicon oxide insulation film, a substrate having a mask pattern on the multilayer film is placed in a vacuum container, an etching gas is introduced into the vacuum container, and an electrical discharge is induced by applying an electrical field to the vacuum container, thereby anisotropically etching the multilayered film in accordance with the mask pattern. The method comprises the first etching step for etching the first layer by use of the first gas selected from fluorine, sulfur hexafluoride, and nitrogen trifuoride, or a mixture gas containing the first gas and the second gas selected from hydrogen chloride, hydrogen bromide, chlorine, bromine, and carbon tetrachloride, as an etching gas, and the second etching step for etching the second layer by use of the second gas, or a mixture gas containing the second gas and the third gas selected from an inert gas, nitrogen gas, oxygen gas, silicon tetrachloride gas and carbon monoxide gas, as an etching gas.

45. 发明授权

US4595601A Method of selectively forming an insulation layer 失效
标题翻译：选择性地形成绝缘层的方法
公开(公告)号：US4595601A
公开(公告)日：1986-06-17
申请号：US736211
申请日：1985-05-20
申请人： Keiji Horioka , Haruo Okano , Makoto Sekine
发明人： Keiji Horioka , Haruo Okano , Makoto Sekine
IPC分类号： C04B41/45 , C04B41/81 , C23C8/04 , C23C16/04 , H01L21/316 , H01L21/32 , H01L21/762 , B05D3/06
CPC分类号： H01L21/02238 , C04B41/4505 , C04B41/81 , C23C16/047 , C23C8/04 , H01L21/02255 , H01L21/31612 , H01L21/31662 , H01L21/32 , H01L21/76224 , H01L21/76281
摘要： An insulation layer is selectively formed by exposing the surface of a workpiece to an atmosphere comprising a mixture of a halogen-based gas and a raw gas containing a compoundable element chemically bondable with an element of a material constituting surface layer of the workpiece to form an insulating compound. The surface layer of the workpiece is formed of a non-insulating material, such as a metallic material or a semiconductor material. Light rays are directly irradiated on the selected region or regions of the surface of the workpiece through the atmosphere of the gaseous mixture, thereby dissociating said halogen-based gas. As a result, a layer comprising the insulating compound is formed on the selected region of the surface of the workpiece on which the light rays have been directly irradiated.
摘要翻译：通过将工件的表面暴露于包含卤素类气体和含有与构成工件的表面层的材料的元素进行化学键合的可复合元素的原料气体的混合物的气氛来选择性地形成绝缘层，以形成绝缘化合物。工件的表面层由诸如金属材料或半导体材料的非绝缘材料形成。通过气体混合物的气氛将光线直接照射在工件表面的选定区域或区域上，从而解离所述卤素类气体。结果，在直接照射光线的工件的表面的选定区域上形成包含绝缘化合物的层。

46. 发明授权

US08617351B2 Plasma reactor with minimal D.C. coils for cusp, solenoid and mirror fields for plasma uniformity and device damage reduction 有权
标题翻译：等离子体反应器具有最小的直流线圈，用于尖端，螺线管和镜面场，用于等离子体均匀性和器件损坏降低
公开(公告)号：US08617351B2
公开(公告)日：2013-12-31
申请号：US11046656
申请日：2005-01-28
申请人： Daniel J. Hoffman , Roger A. Lindley , Michael C. Kutney , Martin J. Salinas , Hamid F. Tavassoli , Keiji Horioka , Douglas A. Buchberger, Jr.
发明人： Daniel J. Hoffman , Roger A. Lindley , Michael C. Kutney , Martin J. Salinas , Hamid F. Tavassoli , Keiji Horioka , Douglas A. Buchberger, Jr.
IPC分类号： C23F1/00 , H01L21/306 , C03C15/00
CPC分类号： H01J37/32091 , H01J37/3244 , H01J37/32623 , H01J37/3266
摘要： A plasma reactor for processing a workpiece, includes a vacuum chamber defined by a sidewall and ceiling, and a workpiece support pedestal having a workpiece support surface in the chamber and facing the ceiling and including a cathode electrode. An RF power generator is coupled to the cathode electrode. Plasma distribution is controlled by an external annular inner electromagnet in a first plane overlying the workpiece support surface, an external annular outer electromagnet in a second plane overlying the workpiece support surface and having a greater diameter than the inner electromagnet, and an external annular bottom electromagnet in a third plane underlying the workpiece support surface. D.C. current supplies are connected to respective ones of the inner, outer and bottom electromagnets.
摘要翻译：一种用于加工工件的等离子体反应器，包括由侧壁和天花板限定的真空室，以及在所述室中具有工件支撑表面并且面向天花板并且包括阴极电极的工件支撑基座。 RF发生器耦合到阴极电极。等离子体分布由覆盖工件支撑表面的第一平面中的外部环形内部电磁体控制，覆盖工件支撑表面并且具有比内部电磁体更大的直径的第二平面中的外部环形外部电磁体以及外部环形底部电磁体在工件支撑表面下方的第三平面内。内部，外部和底部电磁铁中的相应电源连接到电流源。

47. 发明授权

US07807578B2 Frequency doubling using spacer mask 失效
标题翻译：使用间隔掩模倍频
公开(公告)号：US07807578B2
公开(公告)日：2010-10-05
申请号：US11875250
申请日：2007-10-19
申请人： Christopher D. Bencher , Keiji Horioka
发明人： Christopher D. Bencher , Keiji Horioka
IPC分类号： H01L21/311
CPC分类号： H01L21/3081 , H01L21/0332 , H01L21/0337 , H01L21/0338 , H01L21/3086 , H01L21/3088 , H01L21/31144 , H01L21/32139
摘要： A method for fabricating a semiconductor mask is described. A semiconductor stack having a sacrificial mask and a spacer mask is first provided. The sacrificial mask is comprised of a series of lines and the spacer mask has spacer lines adjacent to the sidewalls of the series of lines. Next, the spacer mask is cropped. Finally, the sacrificial mask is removed to provide a cropped spacer mask. The cropped spacer mask doubles the frequency of the series of lines of the sacrificial mask.
摘要翻译：对半导体掩模的制造方法进行说明。首先提供具有牺牲掩模和间隔掩模的半导体叠层。牺牲掩模由一系列线组成，并且间隔物掩模具有与该系列线的侧壁相邻的间隔线。接下来，裁剪间隔掩模。最后，去除牺牲掩模以提供裁剪的间隔物掩模。裁剪的间隔掩模将牺牲掩模的一系列线的频率加倍。

48. 发明申请

US20090008033A1 METHOD AND APPARATUS FOR SHAPING A MAGNETIC FIELD IN A MAGNETIC FIELD-ENHANCED PLASMA REACTOR 失效
标题翻译：在磁场增强等离子体反应器中形成磁场的方法和装置
公开(公告)号：US20090008033A1
公开(公告)日：2009-01-08
申请号：US12204408
申请日：2008-09-04
申请人： Roger Alan Lindley , Jingbao Liu , Bryan Y. Pu , Keiji Horioka
发明人： Roger Alan Lindley , Jingbao Liu , Bryan Y. Pu , Keiji Horioka
IPC分类号： C23F1/08 , B05C5/00
CPC分类号： H01J37/32623 , H01J37/3266 , H01J37/32688
摘要： A magnetic field generator which provides greater control over the magnetic field is provided. The magnetic field generator has a plurality of overlapping main magnetic coil sections for forming a magnetic field generally parallel to the top surface of the supporting member. In other embodiments, sub-magnetic coil sections are placed symmetrically around the main magnetic coil sections.
摘要翻译：提供了提供对磁场的更大控制的磁场发生器。磁场发生器具有多个重叠的主磁线圈段，用于形成大致平行于支撑构件的顶表面的磁场。在其他实施例中，副磁性线圈部分围绕主电磁线圈部分对称放置。

49. 发明申请

US20080299776A1 FREQUENCY DOUBLING USING SPACER MASK 失效
标题翻译：使用SPACER MASK进行频率双重调整
公开(公告)号：US20080299776A1
公开(公告)日：2008-12-04
申请号：US11875250
申请日：2007-10-19
申请人： Christopher D. Bencher , Keiji Horioka
发明人： Christopher D. Bencher , Keiji Horioka
IPC分类号： H01L21/311
CPC分类号： H01L21/3081 , H01L21/0332 , H01L21/0337 , H01L21/0338 , H01L21/3086 , H01L21/3088 , H01L21/31144 , H01L21/32139
摘要： A method for fabricating a semiconductor mask is described. A semiconductor stack having a sacrificial mask and a spacer mask is first provided. The sacrificial mask is comprised of a series of lines and the spacer mask has spacer lines adjacent to the sidewalls of the series of lines. Next, the spacer mask is cropped. Finally, the sacrificial mask is removed to provide a cropped spacer mask. The cropped spacer mask doubles the frequency of the series of lines of the sacrificial mask.
摘要翻译：对半导体掩模的制造方法进行说明。首先提供具有牺牲掩模和间隔掩模的半导体叠层。牺牲掩模由一系列线组成，并且间隔物掩模具有与该系列线的侧壁相邻的间隔线。接下来，裁剪间隔掩模。最后，去除牺牲掩模以提供裁剪的间隔物掩模。裁剪的间隔掩模将牺牲掩模的一系列线的频率加倍。

50. 发明授权

US07316199B2 Method and apparatus for controlling the magnetic field intensity in a plasma enhanced semiconductor wafer processing chamber 失效
标题翻译：用于控制等离子体增强半导体晶片处理室中的磁场强度的方法和装置
公开(公告)号：US07316199B2
公开(公告)日：2008-01-08
申请号：US10146443
申请日：2002-05-14
申请人： Keiji Horioka , Chun Yan , Taeho Shin , Roger Alan Lindley , Qi Li , Panyin Hughes , Douglas H. Burns , Evans Y. Lee , Bryan Y. Pu
发明人： Keiji Horioka , Chun Yan , Taeho Shin , Roger Alan Lindley , Qi Li , Panyin Hughes , Douglas H. Burns , Evans Y. Lee , Bryan Y. Pu
IPC分类号： C23C16/00 , H01L21/306
CPC分类号： H01J37/32623 , H01J37/3266
摘要： A magnetic field generator for producing a magnetic field that accelerates plasma formation is placed proximate a reaction chamber of semiconductor substrate processing system. The magnetic field generator has four main magnetic coil sections for producing a magnetic field nearly parallel to the top surface of a support pedestal in the reaction chamber and four sub-magnetic coil sections placed generally coaxially with the main magnetic coil sections to produce a magnetic field of the direction opposite of that of the magnetic field produced with the main magnetic coil sections. In the magnetic field generator, magnetic fields of opposite polarities are superimposed on each other when electric currents of opposite directions are applied to the main and sub-magnetic coil sections.
摘要翻译：用于产生加速等离子体形成的磁场的磁场发生器放置在半导体衬底处理系统的反应室附近。磁场发生器具有四个主要的磁线圈部分，用于产生几乎平行于反应室中的支撑基座的顶表面的磁场和与主电磁线圈部分大致同轴放置的四个子磁线圈部分，以产生磁场的方向与由主电磁线圈段产生的磁场的方向相反。在磁场发生器中，相反极性的磁场在施加到主磁亚极部分和次磁线圈部分的相反方向的电流时彼此叠加。

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