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1. 发明授权

US5259923A Dry etching method 失效
标题翻译：干蚀刻法
公开(公告)号：US5259923A
公开(公告)日：1993-11-09
申请号：US889627
申请日：1992-05-28
申请人： Masaru Hori , Keiji Horioka , Haruo Okano , Masao Ito , Masahito Hiratsuka , Yoshio Ishikawa
发明人： Masaru Hori , Keiji Horioka , Haruo Okano , Masao Ito , Masahito Hiratsuka , Yoshio Ishikawa
IPC分类号： H01L21/28 , H01L21/302 , H01L21/3065 , H01L21/3205 , H01L21/3213 , H01L23/52 , H01L29/423 , H01L29/43 , H01L29/49 , H01L21/306 , B44C1/22 , C03C15/00 , C23F1/00
CPC分类号： H01L21/32136 , H01L21/32137 , H01L2924/0002
摘要： A dry etching method, wherein a multilayer film including one selected from tungsten, molybdenum, and a silicide thereof, as the first layer, and polycrystal silicon as the second layer underlying is formed on a silicon oxide insulation film, a substrate having a mask pattern on the multilayer film is placed in a vacuum container, an etching gas is introduced into the vacuum container, and an electrical discharge is induced by applying an electrical field to the vacuum container, thereby anisotropically etching the multilayered film in accordance with the mask pattern. The method comprises the first etching step for etching the first layer by use of the first gas selected from fluorine, sulfur hexafluoride, and nitrogen trifuoride, or a mixture gas containing the first gas and the second gas selected from hydrogen chloride, hydrogen bromide, chlorine, bromine, and carbon tetrachloride, as an etching gas, and the second etching step for etching the second layer by use of the second gas, or a mixture gas containing the second gas and the third gas selected from an inert gas, nitrogen gas, oxygen gas, silicon tetrachloride gas and carbon monoxide gas, as an etching gas.

2. 发明授权

US5445710A Method of manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US5445710A
公开(公告)日：1995-08-29
申请号：US202372
申请日：1994-02-25
申请人： Masaru Hori , Hiroyuki Yano , Keiji Horioka , Hisataka Hayashi , Sadayuki Jimbo , Haruo Okano , Kazuhiro Tomioka , Yasuhiro Ito , Haruki Mori
发明人： Masaru Hori , Hiroyuki Yano , Keiji Horioka , Hisataka Hayashi , Sadayuki Jimbo , Haruo Okano , Kazuhiro Tomioka , Yasuhiro Ito , Haruki Mori
IPC分类号： H01L21/033 , H01L21/308 , H01L21/311 , H01L21/314 , H01L21/3213 , H01L21/306 , B44C1/22 , C03C15/00 , C23F1/00
CPC分类号： H01L21/31122 , H01L21/0332 , H01L21/3081 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L21/3146 , H01L21/32136 , H01L21/32137 , H01L21/32139
摘要： A dry-etching method comprising the steps of forming carbon film on a substrate to be etched, forming a resist pattern on said carbon thin film, selectively etching said carbon film using said resist pattern as a mask by a plasma of a gas mixture of a gas containing fluorine atoms and a gas containing oxygen atoms which are mixed at an atomic ratio of fluorine to oxygen of 198:1 to 1:2 so as to form a carbon film pattern, and selectively etching said substrate to be etched using said carbon film pattern as a mask or said resist pattern and said carbon film pattern as masks.
摘要翻译：一种干蚀刻方法，包括以下步骤：在要蚀刻的基底上形成碳膜，在所述碳薄膜上形成抗蚀剂图案，使用所述抗蚀剂图案作为掩模，用等离子体选择性地蚀刻所述碳膜，含有氟原子的气体和以氟与氧的原子比混合为198:1〜1:2的含有氧原子的气体，以形成碳膜图案，并使用所述碳膜选择性地蚀刻所述蚀刻用基板图案作为掩模或所述抗蚀剂图案和所述碳膜图案作为掩模。

3. 发明授权

US5302240A Method of manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US5302240A
公开(公告)日：1994-04-12
申请号：US20193
申请日：1993-02-19
申请人： Masaru Hori , Hiroyuki Yano , Keiji Horioka , Hisataka Hayashi , Sadayuki Jimbo , Haruo Okano , Kazuhiro Tomioka , Yasuhiro Ito , Haruki Mori
发明人： Masaru Hori , Hiroyuki Yano , Keiji Horioka , Hisataka Hayashi , Sadayuki Jimbo , Haruo Okano , Kazuhiro Tomioka , Yasuhiro Ito , Haruki Mori
IPC分类号： H01L21/033 , H01L21/308 , H01L21/311 , H01L21/314 , H01L21/3213 , H01L2/306 , B44C1/22 , C03C15/00 , C23F1/00
CPC分类号： H01L21/31122 , H01L21/0332 , H01L21/3081 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L21/3146 , H01L21/32136 , H01L21/32137 , H01L21/32139
摘要： A dry-etching method comprising the steps of forming carbon film on a substrate to be etched, forming a resist pattern on said carbon thin film, selectively etching said carbon film using said resist pattern as a mask by a plasma of a gas mixture of a gas containing fluorine atoms and a gas containing oxygen atoms which are mixed at an atomic ratio of fluorine to oxygen of 198:1 to 1:2 so as to form a carbon film pattern, and selectively etching said substrate to be etched using said carbon film pattern as a mask or said resist pattern and said carbon film pattern as masks.
摘要翻译：一种干蚀刻方法，包括以下步骤：在要蚀刻的基底上形成碳膜，在所述碳薄膜上形成抗蚀剂图案，使用所述抗蚀剂图案作为掩模，用等离子体选择性地蚀刻所述碳膜，含有氟原子的气体和以氟与氧的原子比混合为198:1〜1:2的含有氧原子的气体，以形成碳膜图案，并使用所述碳膜选择性地蚀刻所述蚀刻用基板图案作为掩模或所述抗蚀剂图案和所述碳膜图案作为掩模。

4. 发明授权

US5240554A Method of manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US5240554A
公开(公告)日：1993-08-31
申请号：US824095
申请日：1992-01-22
申请人： Masaru Hori , Hiroyuki Yano , Keiji Horioka , Hisataka Hayashi , Sadayuki Jimbo , Haruo Okano
发明人： Masaru Hori , Hiroyuki Yano , Keiji Horioka , Hisataka Hayashi , Sadayuki Jimbo , Haruo Okano
IPC分类号： H01L21/308 , H01L21/311 , H01L21/314 , H01L21/3213
CPC分类号： H01L21/31138 , H01L21/3081 , H01L21/31116 , H01L21/31144 , H01L21/3146 , H01L21/32136 , H01L21/32139 , Y10S438/945
摘要： A method of manufacturing a semiconductor device includes the steps of forming a carbon film on a target film formed on a substrate, forming an organic film pattern on the carbon film, etching the carbon film using the organic film pattern as a mask to form a carbon film pattern, and heating the substrate, supplying an etching gas having halogen atoms to a reaction area where the substrate is stored, applying an electric field to the reaction area to generate a discharge, and anisotropically etching the silicon oxide film using the carbon film pattern as a mask and a plasma formed by the discharge.
摘要翻译：一种制造半导体器件的方法包括以下步骤：在形成在基片上的靶膜上形成碳膜，在碳膜上形成有机膜图案，使用有机膜图案作为掩模蚀刻碳膜，形成碳并对基板进行加热，将具有卤素原子的蚀刻气体供给到存储基板的反应区域，向反应区域施加电场以产生放电，并使用碳膜图案进行各向异性蚀刻氧化硅膜作为掩模和通过放电形成的等离子体。

5. 发明授权

US5707487A Method of manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US5707487A
公开(公告)日：1998-01-13
申请号：US332504
申请日：1994-10-31
申请人： Masaru Hori , Hiroyuki Yano , Keiji Horioka , Haruo Okano
发明人： Masaru Hori , Hiroyuki Yano , Keiji Horioka , Haruo Okano
IPC分类号： C23F4/00 , G03F7/09 , H01L21/302 , H01L21/3065 , H01L21/308 , H01L21/311 , H01L21/314 , H01L21/3213
CPC分类号： G03F7/094 , H01L21/3081 , H01L21/31144 , H01L21/3146 , H01L21/32139 , Y10S438/95
摘要： According to this invention, a method of manufacturing a semiconductor device includes the steps of forming a carbon film on a surface of a substrate, forming a mask pattern on the carbon film, etching the carbon film along the mask pattern to form a carbon film pattern, and reactive ion etching the substrate along the carbon film pattern using a high density plasma produced by application of a high frequency and a magnetic field, application of a microwave, irradiation of an electron beam, application of a high frequency of not less than 27 MHz, or application of a inductive coupled high frequency.
摘要翻译：根据本发明，制造半导体器件的方法包括以下步骤：在基片的表面上形成碳膜，在碳膜上形成掩模图案，沿着掩模图案蚀刻碳膜以形成碳膜图案并且使用通过施加高频和磁场产生的高密度等离子体沿着碳膜图案反应离子蚀刻基板，施加微波，照射电子束，施加不小于27的高频 MHz或应用电感耦合高频。

6. 发明授权

US5411631A Dry etching method 失效
标题翻译：干蚀刻法
公开(公告)号：US5411631A
公开(公告)日：1995-05-02
申请号：US151185
申请日：1993-11-12
申请人： Masaru Hori , Haruo Okano , Michishige Aoyama , Masao Ito , Kei Hattori , Fumihiko Higuchi , Yoshifumi Tahara
发明人： Masaru Hori , Haruo Okano , Michishige Aoyama , Masao Ito , Kei Hattori , Fumihiko Higuchi , Yoshifumi Tahara
IPC分类号： C23F4/00 , H01L21/302 , H01L21/3065 , H01L21/3213 , H01L21/00
CPC分类号： H01L21/32136 , C23F4/00
摘要： According to this invention, a dry etching method includes the step of sequentially forming an SiO.sub.2 film, an Al--Si--Cu thin film, and a photoresist on an Si substrate to sequentially form a mask pattern, the step of etching the Al--Si--Cu thin film by RIE using a gas mixture of Cl.sub.2 and BCl.sub.3 as an etching gas, and the step of removing etching residues by a sputter effect obtained by the plasma of the BCl.sub.3 gas.
摘要翻译：根据本发明，干蚀刻方法包括在Si衬底上依次形成SiO 2膜，Al-Si-Cu薄膜和光致抗蚀剂以依次形成掩模图案的步骤，蚀刻Al-Si -Cu薄膜通过RIE使用Cl 2和BCl 3的气体混合物作为蚀刻气体，以及通过BCl 3气体的等离子体获得的溅射效应去除蚀刻残留物的步骤。

7. 发明授权

US08638034B2 Multi-micro hollow cathode light source and atomic absorption sepctrometer 有权
标题翻译：多微空心阴极光源和原子吸收分光光度计
公开(公告)号：US08638034B2
公开(公告)日：2014-01-28
申请号：US13578171
申请日：2011-02-08
申请人： Masaru Hori , Masafumi Ito , Takayuki Ohta , Hiroyuki Kano , Koji Yamakawa
发明人： Masaru Hori , Masafumi Ito , Takayuki Ohta , Hiroyuki Kano , Koji Yamakawa
IPC分类号： H01J17/16
CPC分类号： H01J65/046 , G01N21/3103 , H05H1/2406 , H05H2001/2412
摘要： The multi-micro hollow cathode light source has a cathode plate, an insulation plate, an anode plate, and metal pieces. The insulation plate is sandwiched by the cathode plate and the anode plate. The cathode plate is made of copper. The centers of the cathode plate, insulation plate, and anode plate, are provided with holes, respectively. The holes form a penetrating though-hole. Linear slots are disposed in the cathode plate continuously extending from the hole in a cross shape. Each slot penetrates the cathode plate. Four metal pieces made of materials different from one another are inserted and buried in the four slots.
摘要翻译：多微孔中空阴极光源具有阴极板，绝缘板，阳极板和金属片。绝缘板由阴极板和阳极板夹持。阴极板由铜制成。阴极板，绝缘板和阳极板的中心分别设有孔。孔形成贯穿孔。线状槽设置在从十字形状连续延伸的阴极板中。每个槽都穿过阴极板。四个由彼此不同的材料制成的金属片插入并埋在四个槽中。

8. 发明授权

US08610353B2 Plasma generating apparatus, plasma processing apparatus and plasma processing method 有权
标题翻译：等离子体发生装置，等离子体处理装置和等离子体处理方法
公开(公告)号：US08610353B2
公开(公告)日：2013-12-17
申请号：US13224879
申请日：2011-09-02
申请人： Hitoshi Itoh , Hidenori Miyoshi , Masaru Hori , Hirotaka Toyoda , Makoto Sekine
发明人： Hitoshi Itoh , Hidenori Miyoshi , Masaru Hori , Hirotaka Toyoda , Makoto Sekine
IPC分类号： H01J7/24 , H05B31/26
CPC分类号： H05H1/46 , H01J37/32192 , H01J37/3222 , H01J37/32229 , H01J37/3244 , H05H2001/4622
摘要： An apparatus for generating plasma, comprises: a microwave generator configured to generate a microwave; a wave guide which is connected to the microwave generator, wherein the wave guide is elongated in a traveling direction of the microwave and has a hollow shape having a rectangular section in a direction perpendicular to the traveling direction; a gas feeder which is connected to the wave guide and feeds process gas into the wave guide; and an antenna unit which is a part of the wave guide and discharges plasma generated by the microwave to the outside, wherein the antenna unit has one or more slots formed on a wall constituting a short side in a section of the antenna unit, plasmarizes the process gas fed into the wave guide under an atmospheric pressure in the slots by the microwave, and discharges the plasma out of the slots.
摘要翻译：一种用于产生等离子体的装置，包括：微波发生器，被配置为产生微波; 与微波发生器连接的波导，其中波导在微波的行进方向上伸长，并且具有在与行进方向垂直的方向上具有矩形截面的中空形状; 气体供给器，其连接到波导并将处理气体馈送到波导中; 以及天线单元，其是波导的一部分并将由微波产生的等离子体放电到外部，其中天线单元具有形成在构成天线单元的部分中的短边的壁上的一个或多个槽，通过微波在大气压下在槽中供给到波导管中的工艺气体，并将等离子体从槽中排出。

9. 发明授权

US08558169B2 Sample substrate for laser desorption ionization-mass spectrometry, and method and device both using the same for laser desorption ionization-mass spectrometry 失效
标题翻译：用于激光解吸电离质谱的样品衬底，以及用于激光解吸电离质谱法的方法和装置
公开(公告)号：US08558169B2
公开(公告)日：2013-10-15
申请号：US13388970
申请日：2010-07-29
申请人： Masaru Hori , Hiroaki Sato , Yasutake Toyoshima , Mineo Hiramatsu
发明人： Masaru Hori , Hiroaki Sato , Yasutake Toyoshima , Mineo Hiramatsu
IPC分类号： H01J49/00
CPC分类号： G01N27/622
摘要： An object of the present invention is to provide a sample substrate for laser desorption ionization mass spectrometry for LDI-MS which substrate enables mass spectrometric analysis of a sample correctly at high sensitivity without generating interference peaks upon irradiation of the sample to laser light and uniform application of the sample onto a base. Another object of the invention is to provide a mass spectrometer (device) employing the sample substrate.In the sample substrate for laser desorption ionization mass spectrometry, the sample substrate is formed of a base and carbon nanowalls having wall surfaces onto which a sample to undergo mass spectrometry is applied, wherein the carbon nanowalls are formed on the base so as to stand on the base. The surfaces of carbon nanowalls serve as an ionization medium and hydrophilized. By use of the sample substrate, mass spectrometry of a sample having a wide range (high to low) molecular weight can be reliably performed at high precision and sensitivity.
摘要翻译：本发明的目的是提供一种用于LDI-MS的激光解吸电离质谱的样品基片，该基片能够以高灵敏度正确地对样品进行质谱分析，而不会在将样品照射到激光上并产生均匀的应用时产生干涉峰的样品到基底上。本发明的另一个目的是提供一种采用样品基质的质谱仪（装置）。在用于激光解吸电离质谱的样品衬底中，样品衬底由具有壁表面的基底和碳纳米壁形成，其上应用要进行质谱的样品，其中碳纳米壁形成在基底上以便立在的基地。碳纳米壁的表面用作电离介质并亲水化。通过使用样品基板，可以以高精度和灵敏度可靠地进行具有宽范围（高低分子量）的样品的质谱分析。

10. 发明授权

US08551657B2 Negative electrode for lithium secondary battery, method for preparing the negative electrode, lithium secondary battery having the negative electrode, and vehicle having the lithium secondary battery 有权
标题翻译：锂二次电池用负极，负极制造方法，具有负极的锂二次电池以及具有锂二次电池的车辆
公开(公告)号：US08551657B2
公开(公告)日：2013-10-08
申请号：US13508553
申请日：2010-11-10
申请人： Satoshi Yoshida , Yuichiro Hama , Masaru Hori , Mineo Hiramatsu , Hiroyuki Kano
发明人： Satoshi Yoshida , Yuichiro Hama , Masaru Hori , Mineo Hiramatsu , Hiroyuki Kano
IPC分类号： H01M4/58 , C01B31/00
CPC分类号： H01M4/1395 , H01M4/0416 , H01M4/0423 , H01M4/0428 , H01M4/0473 , H01M4/134 , H01M4/38 , H01M4/383 , H01M4/625 , H01M4/663 , H01M10/0525 , Y02E60/122
摘要： A negative electrode (10) for a lithium secondary battery, including a negative electrode collector (20), and a negative electrode active substance layer (30) that is supported on the negative electrode collector (20) and includes carbon nanowalls (32) which are formed on the negative electrode collector (20), and a negative electrode active substance (36) which is supported on the carbon nanowalls (32).
摘要翻译：一种用于锂二次电池的负极（10），包括负极集电体（20）和负极活性物质层（30），负极活性物质层（30）被负载在负极集电体（20）上并且包括碳纳米壁（32）形成在负极集电体（20）上，负极活性物质（36）被负载在碳纳米壁（32）上。

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