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31. 发明授权

US08258024B2 Display device and method of manufacturing the same 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US08258024B2
公开(公告)日：2012-09-04
申请号：US12606284
申请日：2009-10-27
申请人： Mieko Matsumura , Mutsuko Hatano , Yoshiaki Toyota , Takuo Kaitoh
发明人： Mieko Matsumura , Mutsuko Hatano , Yoshiaki Toyota , Takuo Kaitoh
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： H01L27/1288 , H01L27/1214 , H01L27/3262 , H01L29/04 , H01L29/78696
摘要： The display device having a thin film transistor formed on a substrate including a display portion is provided. The thin film transistor including: a gate electrode; a gate insulating film formed so as to cover the gate electrode; a semiconductor laminated film formed on top the gate insulating film so as to extend over the gate electrode, the semiconductor laminated film being formed by laminating at least a polycrystalline semiconductor film and an amorphous semiconductor film, a first electrode and a second electrode disposed on top of the semiconductor laminated film so as to be opposed to each other across a region superposing the gate electrode. In the display device, the semiconductor laminated film is formed immediately below a wiring extending from the first electrode and immediately below a wiring extending from the second electrode.
摘要翻译：提供具有形成在包括显示部分的基板上的薄膜晶体管的显示装置。该薄膜晶体管包括：栅电极; 形成为覆盖所述栅电极的栅极绝缘膜; 半导体层叠膜，形成在所述栅极绝缘膜的顶部上，以在所述栅极上延伸，所述半导体层叠膜通过层叠至少多晶半导体膜和非晶半导体膜，第一电极和设置在顶部的第二电极而形成的半导体层叠膜，以跨越叠加栅电极的区域彼此相对。在显示装置中，半导体层叠膜形成在从第一电极延伸的布线的正下方并且紧接在从第二电极延伸的布线的下方。

32. 发明授权

US08124974B2 Display device 有权
标题翻译：显示设备
公开(公告)号：US08124974B2
公开(公告)日：2012-02-28
申请号：US12536097
申请日：2009-08-05
申请人： Takeshi Noda , Toshio Miyazawa , Takuo Kaitoh , Takumi Shigaki
发明人： Takeshi Noda , Toshio Miyazawa , Takuo Kaitoh , Takumi Shigaki
IPC分类号： H01L33/00
CPC分类号： G02F1/13624 , G02F2202/104
摘要： A display device is provided in which at least first and second thin film transistors are formed on a substrate, including a gate electrode formed on a semiconductor layer with a gate insulating film in between. The semiconductor layer is divided into individual regions for each film transistor, and is provided with a common region and LDD regions between a channel region and a drain region, as well as between the channel region and a source region. The gate electrode is formed as an integrated gate electrode for the first and second thin film transistors that faces the common region, the channel region and the LDD regions of the first thin film transistor and the channel region and the LDD regions of the second thin film transistor.
摘要翻译：提供了一种显示装置，其中至少第一和第二薄膜晶体管形成在基板上，包括形成在其间具有栅极绝缘膜的半导体层上的栅电极。半导体层被分成用于每个薄膜晶体管的单个区域，并且在沟道区域和漏极区域之间以及在沟道区域和源极区域之间设置有公共区域和LDD区域。栅电极形成为第一和第二薄膜晶体管的集成栅电极，其面对公共区域，第一薄膜晶体管的沟道区域和LDD区域以及第二薄膜的沟道区域和LDD区域晶体管。

33. 发明申请

US20110024763A1 DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US20110024763A1
公开(公告)日：2011-02-03
申请号：US12844887
申请日：2010-07-28
申请人： Takeshi NODA , Toshio Miyazawa , Takuo Kaitoh , Daisuke Sonoda
发明人： Takeshi NODA , Toshio Miyazawa , Takuo Kaitoh , Daisuke Sonoda
IPC分类号： H01L33/16 , H01L21/336
CPC分类号： H01L29/78621 , G02F1/1368 , H01L29/66765 , H01L29/78627
摘要： A display device which has thin film transistors, wherein a semiconductor layer includes a first layer, second layers and third layers, the first layer has a channel region, the second layers are an impurity layer, the third layers are a low-concentration impurity layer, the second layers have connection portions connected with an electrodes, the third layers are formed to annularly surround the second layers, a channel-region-side edge portion out of edge portions of the third layer is in contact with the first layer, the edge portions of the third layer but the channel-region-side edge portion are in contact with an interlayer insulation film, the second layers have a first region where the second layer overlaps with a gate electrode and a second region where the second layer does not overlap with the gate electrode, and the connection portion is in the second region.
摘要翻译：一种具有薄膜晶体管的显示装置，其中半导体层包括第一层，第二层和第三层，第一层具有沟道区，第二层是杂质层，第三层是低浓度杂质层所述第二层具有与电极连接的连接部，所述第三层形成为环绕所述第二层，所述第三层的边缘部分之外的沟道区域侧边缘部与所述第一层接触，所述边缘第三层的第二层与沟道区侧边缘部分接触层间绝缘膜，第二层具有第一区域，其中第二层与栅电极重叠，第二区与第二层不重叠与栅电极连接，连接部位在第二区域。

34. 发明授权

US07524685B2 Manufacturing method of a display device 有权
标题翻译：显示装置的制造方法
公开(公告)号：US07524685B2
公开(公告)日：2009-04-28
申请号：US11509739
申请日：2006-08-25
申请人： Takuo Kaitoh , Eiji Oue , Toshihiko Itoga
发明人： Takuo Kaitoh , Eiji Oue , Toshihiko Itoga
IPC分类号： H01L21/66
CPC分类号： H01L21/02675 , H01L21/2026 , H01L27/1285 , H01L27/1296 , H01L29/04
摘要： The present invention provides a manufacturing method of a display device which can decrease the lowering of a yield rate of the display device attributed to the aggregations generated by pseudo single crystallization of a silicon film. A manufacturing method of a display device includes a semiconductor film reforming step which reforms a semiconductor film into a second state in which the semiconductor film possesses elongated crystalline particles by radiating a laser beam to the semiconductor film in a first state, an aggregation detecting step which detects the aggregation of the semiconductor film which is generated in the semiconductor film reforming step, and a defect determination step which determines a product as a defective product when a position of the aggregation is present in the inside of the predetermined region and determines the product as a good product when the position of the aggregation is present outside the predetermined region.
摘要翻译：本发明提供一种显示装置的制造方法，其能够降低归因于硅膜的伪单晶化产生的聚集的显示装置的成品率的降低。显示装置的制造方法包括：半导体膜重整工序，其将第一状态下的半导体膜照射激光，将半导体膜改性为半导体膜具有细长结晶粒子的第二状态，聚集检测步骤，检测在半导体膜重整步骤中产生的半导体膜的聚集，以及缺陷确定步骤，当聚集的位置存在于预定区域的内部时，将产品确定为不合格品，并将产品确定为当聚集的位置存在于预定区域之外时，产品是良好的。

35. 发明授权

US06344885B1 Liquid crystal display device 有权
标题翻译：液晶显示装置
公开(公告)号：US06344885B1
公开(公告)日：2002-02-05
申请号：US09285025
申请日：1999-04-01
申请人： Ikuko Mori , Takuo Kaitoh , Hironobu Abe , Masahiro Eto , Toshihiro Satoh , Kazuhiro Ishida , Hajime Kudoh
发明人： Ikuko Mori , Takuo Kaitoh , Hironobu Abe , Masahiro Eto , Toshihiro Satoh , Kazuhiro Ishida , Hajime Kudoh
IPC分类号： G02F1136
CPC分类号： G02F1/136213 , G02F1/136209 , G02F2202/104 , H01L29/6675 , H01L29/78633 , H01L29/78648
摘要： A liquid crystal display device capable of preventing a semiconductor element from malfunctioning due to the light which enters the semiconductor element from the display side opposed to a light source side. The liquid crystal display device comprises a first substrate (11), a second substrate and a liquid crystal sandwiched between the first substrate and the second substrate. The liquid crystal display device further comprises semiconductor elements (FG) formed over the first substrate and arranged in a matrix, and a light shielding film (BS) formed over the first substrate for blocking the light which would enter the semiconductor elements from the display face of the liquid crystal display device if not blocked.

36. 发明授权

US08530898B2 Display device 有权
标题翻译：显示设备
公开(公告)号：US08530898B2
公开(公告)日：2013-09-10
申请号：US12912799
申请日：2010-10-27
申请人： Takeshi Noda , Takuo Kaitoh
发明人： Takeshi Noda , Takuo Kaitoh
IPC分类号： H01L29/04 , H01L29/10 , H01L31/00
CPC分类号： H01L27/127 , H01L27/1214 , H01L29/78621 , H01L29/78627
摘要： A display device which uses a TFT having a gate electrode film thereof arranged on a light source side can also suppress the increase of parasitic capacitance while suppressing the generation of a light leakage current. On at least one end of the TFT, between a high concentration region which constitutes a source region or a drain region and a channel region, a first low concentration region which is arranged on a high concentration region side and exhibits low impurity concentration and a second low concentration region which exhibits impurity concentration even lower than the impurity concentration of the first low concentration region are provided in this order.
摘要翻译：使用其中设置在光源侧的具有栅电极膜的TFT的显示装置也可以抑制寄生电容的增加同时抑制漏光电流的产生。在TFT的至少一端，在构成源极区域或漏极区域的高浓度区域和沟道区域之间，配置在高浓度区域侧且显示低杂质浓度的第一低浓度区域和第二按照该顺序设置表现出比第一低浓度区域的杂质浓度更低的杂质浓度的低浓度区域。

37. 发明授权

US08368077B2 Display device and manufacturing method thereof 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US08368077B2
公开(公告)日：2013-02-05
申请号：US12578641
申请日：2009-10-14
申请人： Takeshi Kuriyagawa , Takeshi Noda , Takuo Kaitoh
发明人： Takeshi Kuriyagawa , Takeshi Noda , Takuo Kaitoh
IPC分类号： H01L27/14
CPC分类号： H01L27/124 , H01L27/1248 , H01L29/66765
摘要： A second insulation layer which is formed by stacking a plurality of layers made of different materials in a mutually contact manner is formed such that the second insulation layer covers a source region and a drain region and also covers a gate electrode from above. A first contact hole which reaches one of the source region and the drain region and a recessed portion which is arranged above the gate electrode but is not communicated with the gate electrode are simultaneously formed on the second insulation layer by dry etching. A first line layer is formed so as to cover the first contact hole. After forming the first line layer, a bottom surface of the recessed portion is etched by dry etching thus forming a second contact hole which reaches the gate electrode in the first and second insulation layers. A second line layer is formed on the second contact hole.
摘要翻译：形成通过以相互接触的方式堆叠由不同材料制成的多个层而形成的第二绝缘层，使得第二绝缘层覆盖源极区域和漏极区域并且还从上方覆盖栅极电极。通过干法蚀刻在第二绝缘层上同时形成到达源极区域和漏极区域中的一个的第一接触孔和设置在栅电极上方但不与栅电极连通的凹部。第一线层形成为覆盖第一接触孔。在形成第一线层之后，通过干蚀刻蚀刻凹陷部分的底表面，从而形成到达第一和第二绝缘层中的栅电极的第二接触孔。在第二接触孔上形成第二线层。

38. 发明授权

US08310611B2 Display device and manufacturing method thereof 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US08310611B2
公开(公告)日：2012-11-13
申请号：US12536066
申请日：2009-08-05
申请人： Takuo Kaitoh , Toshio Miyazawa , Takeshi Sakai
发明人： Takuo Kaitoh , Toshio Miyazawa , Takeshi Sakai
IPC分类号： G02F1/136
CPC分类号： G02F1/1368 , H01L27/124 , H01L29/458 , H01L29/78618
摘要： Provided is a display device including: a gate electrode (GT); a semiconductor film (S) which controls a current flowing between a source electrode (ST) and a drain electrode (DT), the semiconductor film including a channel region and two impurity regions formed of regions which sandwich the channel region; two Ohmic contact layers (DS) being interposed between the source electrode and the like and the two impurity regions; and an insulating film laminated on a partial region of the semiconductor film, the partial region being around a position corresponding to a substantial center of the semiconductor film, in which: the semiconductor film is formed of one of microcrystalline-silicon and polycrystalline-silicon; the two impurity regions are formed in regions on which the insulating film is absent; the two Ohmic contact layers cover the two impurity regions therewith; and the source electrode and the like cover the Ohmic contact layers therewith.
摘要翻译：提供一种显示装置，包括：栅电极（GT）; 控制在源电极（ST）和漏电极（DT）之间流动的电流的半导体膜（S），所述半导体膜包括沟道区域和由夹着沟道区域的区域形成的两个杂质区域; 两个欧姆接触层（DS）插在源电极等和两个杂质区之间; 以及层叠在所述半导体膜的部分区域上的绝缘膜，所述部分区域围绕与所述半导体膜的大致中心对应的位置，其中：所述半导体膜由微晶硅和多晶硅中的一个形成; 在绝缘膜不存在的区域中形成两个杂质区域; 两个欧姆接触层覆盖其两个杂质区域; 源电极等覆盖欧姆接触层。

39. 发明申请

US20100201608A1 DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US20100201608A1
公开(公告)日：2010-08-12
申请号：US12700815
申请日：2010-02-05
申请人： Takeshi SAKAI , Takuo Kaitoh
发明人： Takeshi SAKAI , Takuo Kaitoh
IPC分类号： G09G3/20 , H01J9/20
CPC分类号： G02F1/136204 , H01L27/0248 , H01L27/124
摘要： A technique that can prevent breakdown of a thin film transistor due to static electricity is provided. A manufacturing method of a display device includes, in forming a plurality of thin film transistors constituting a drive circuit outside a display region as an assembly of pixels, forming a first wiring that is connected to gate electrodes of the thin film transistors to cause the thin film transistors to perform generating operation of a drive signal and a second wiring that connects gate electrodes of the thin film transistors adjacent to one another in the forming region of the drive unit in the same layer as the first wiring, and cutting the second wiring after forming the connected thin film transistors.
摘要翻译：提供了可以防止由于静电引起的薄膜晶体管的击穿的技术。一种显示装置的制造方法，在形成构成作为像素的组合的显示区域外的驱动电路的多个薄膜晶体管时，形成与薄膜晶体管的栅电极连接的第一布线，薄膜晶体管，用于执行驱动信号的产生操作;以及第二布线，其将所述薄膜晶体管的栅极彼此相邻地连接在与所述第一布线相同的层中的所述驱动单元的形成区域中，并且在所述第一布线之后切割所述第二布线形成连接的薄膜晶体管。

40. 发明申请

US20090261329A1 DISPLAY DEVICE 审中-公开
标题翻译：显示设备
公开(公告)号：US20090261329A1
公开(公告)日：2009-10-22
申请号：US12423865
申请日：2009-04-15
申请人： Ichiro YAMAKAWA , Kazuhiko Horikoshi , Yoshiki Yonamoto , Naotoshi Akamatsu , Toshihiko Itoga , Takuo Kaitoh , Takahiro Kamo , Gi-il Kim , Takeshi Sakai , Noboru Ooki
发明人： Ichiro YAMAKAWA , Kazuhiko Horikoshi , Yoshiki Yonamoto , Naotoshi Akamatsu , Toshihiko Itoga , Takuo Kaitoh , Takahiro Kamo , Gi-il Kim , Takeshi Sakai , Noboru Ooki
IPC分类号： H01L33/00 , H01L29/786
CPC分类号： H01L29/78609 , H01L29/66765 , H01L29/78669 , H01L31/02161
摘要： Provided is a display device using a TFT serving as a switching element, in which image deterioration of the display device is prevented by suppressing a photo leakage current to be small, and in particular, in which a density of defects which become positive fixed charges by light present in a protective insulating film of the TFT is defined to suppress the photo leakage current. In the display device using the TFT, the TFT includes an insulating film, an amorphous silicon film, a drain electrode and a source electrode, and a protective insulating film laminated on a gate electrode covering a part of a surface of an insulating substrate in the stated order, in which the protective insulating film includes a defect which becomes a positive fixed charge under light irradiation. A surface density of the defects is preferably 2.5×1010 cm−2 or more to 4.0×1010 cm−2 or less.
摘要翻译：提供一种使用TFT作为开关元件的显示装置，其中通过抑制光泄漏电流小而防止显示装置的图像劣化，特别是其中通过以下方式成为正固定电荷的缺陷的密度定义存在于TFT的保护绝缘膜中的光以抑制光漏电流。在使用TFT的显示装置中，TFT包括绝缘膜，非晶硅膜，漏电极和源电极，以及层叠在覆盖绝缘基板表面的一部分的栅电极上的保护绝缘膜其中保护绝缘膜包括在光照射下变成正固定电荷的缺陷。缺陷的表面密度优选为2.5×10 10 cm -2以上至4.0×10 10 cm -2以下。

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