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    • 1. 发明授权
    • Non-volatile semiconductor memory device and method of manufacturing the same
    • 非易失性半导体存储器件及其制造方法
    • US08053826B2
    • 2011-11-08
    • US12602154
    • 2007-09-10
    • Yoshiki Yonamoto
    • Yoshiki Yonamoto
    • H01L29/792
    • H01L21/28282H01L27/115H01L29/4234H01L29/513H01L29/66833H01L29/792
    • The charge retention characteristics of a non-volatile memory, particularly, a MONOS-type non-volatile memory is improved. In a non-volatile memory cell including a tunnel silicon oxide film (107), a silicon nitride film (104) serving as a charge storage film, a silicon oxide film (105), and a gate electrode (108) which are sequentially formed on a semiconductor substrate, the tunnel silicon oxide film (107) has a stacked structure of a silicon oxynitride film (102) and a silicon oxide film (103). Herein, it is configured such that a density of nitrogen atoms contained in the silicon oxynitride film (102) decreases as a distance from an interface with the semiconductor substrate increases in a film-thickness direction of the silicon oxynitride film (102).
    • 非易失性存储器,特别是MONOS型非易失性存储器的电荷保持特性得到改善。 在包括隧道氧化硅膜(107),用作电荷存储膜的氮化硅膜(104),氧化硅膜(105)和栅电极(108)的非挥发性存储单元中,其顺序地形成 在半导体衬底上,隧道氧化硅膜(107)具有氮氧化硅膜(102)和氧化硅膜(103)的叠层结构。 这里,在氧氮化硅膜(102)的膜厚度方向上离开与半导体基板的界面的距离增加时,氮氧化合物膜(102)中所含的氮原子的密度降低。
    • 4. 发明申请
    • NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
    • 非挥发性半导体存储器件及其制造方法
    • US20100176439A1
    • 2010-07-15
    • US12602154
    • 2007-09-10
    • Yoshiki Yonamoto
    • Yoshiki Yonamoto
    • H01L29/792H01L21/336
    • H01L21/28282H01L27/115H01L29/4234H01L29/513H01L29/66833H01L29/792
    • The charge retention characteristics of a non-volatile memory, particularly, a MONOS-type non-volatile memory is improved. In a non-volatile memory cell including a tunnel silicon oxide film (107), a silicon nitride film (104) serving as a charge storage film, a silicon oxide film (105), and a gate electrode (108) which are sequentially formed on a semiconductor substrate, the tunnel silicon oxide film (107) has a stacked structure of a silicon oxynitride film (102) and a silicon oxide film (103). Herein, it is configured such that a density of nitrogen atoms contained in the silicon oxynitride film (102) decreases as a distance from an interface with the semiconductor substrate increases in a film-thickness direction of the silicon oxynitride film (102).
    • 非易失性存储器,特别是MONOS型非易失性存储器的电荷保持特性得到改善。 在包括隧道氧化硅膜(107),用作电荷存储膜的氮化硅膜(104),氧化硅膜(105)和栅电极(108)的非挥发性存储单元中,其顺序地形成 在半导体衬底上,隧道氧化硅膜(107)具有氮氧化硅膜(102)和氧化硅膜(103)的叠层结构。 这里,在氧氮化硅膜(102)的膜厚度方向上离开与半导体基板的界面的距离增加时,氮氧化合物膜(102)中所含的氮原子的密度降低。
    • 6. 发明授权
    • Sample holder for electricity-detection electron spin resonance device
    • 电子检测电子自旋共振装置的样品架
    • US09018954B2
    • 2015-04-28
    • US13499915
    • 2010-10-01
    • Yoshiki YonamotoNaotoshi Akamatsu
    • Yoshiki YonamotoNaotoshi Akamatsu
    • G01V3/00G01R33/30G01N24/10G01R33/60
    • G01R33/30G01N24/10G01R33/60
    • A sample holder structure is provided with which it is possible to reduce current noise derived from electromagnetic induction, etc. in electricity-detection electron spin resonance spectroscopy. Also provided is a process for producing the structure. The material of the sample holder, which is used in an electricity-detection electron spin resonance device, is an FR-4 resin, alumina, glass, or Teflon. The sample holder has four wiring leads formed on the surface thereof. The four wiring leads each has a three-layer structure composed of a nickel layer, a gold layer, and a resist layer which have been arranged in the order from the sample holder surface, and the sample holder has the shape of the letter T. The sample holder has, formed in the end thereof, a gold pad for affixing a sample, and the gold pad has a multilayer structure composed of a nickel layer and a gold layer arranged in this order from the sample holder surface. In the T-shaped head part of the sample holder, the four wiring leads are spaced wider from each other.
    • 提供了一种样品保持器结构,其可以在电检测电子自旋共振光谱法中减少由电磁感应等产生的电流噪声。 还提供了用于生产该结构的方法。 用于检测电子自旋共振装置的样品架的材料是FR-4树脂,氧化铝,玻璃或特氟隆。 样品架具有形成在其表面上的四个布线引线。 四个布线引线各自具有由从样品保持器表面按顺序排列的镍层,金层和抗蚀剂层构成的三层结构,并且样品架具有字母T的形状。 样品保持器在其末端形成有用于固定样品的金垫,并且金垫具有由样品保持器表面依次排列的镍层和金层构成的多层结构。 在样品架的T形头部分中,四个布线引线彼此间隔开。
    • 7. 发明申请
    • SAMPLE HOLDER FOR ELECTRICITY-DETECTION ELECTRON SPIN RESONANCE DEVICE
    • 电子检测电子旋转谐振装置的样品座
    • US20120223716A1
    • 2012-09-06
    • US13499915
    • 2010-10-01
    • Yoshiki YonamotoNaotoshi Akamatsu
    • Yoshiki YonamotoNaotoshi Akamatsu
    • G01R33/30
    • G01R33/30G01N24/10G01R33/60
    • A sample holder structure is provided with which it is possible to reduce current noise derived from electromagnetic induction, etc. in electricity-detection electron spin resonance spectroscopy. Also provided is a process for producing the structure. The material of the sample holder, which is used in an electricity-detection electron spin resonance device, is an FR-4 resin, alumina, glass, or Teflon. The sample holder has four wiring leads formed on the surface thereof. The four wiring leads each has a three-layer structure composed of a nickel layer, a gold layer, and a resist layer which have been arranged in the order from the sample holder surface, and the sample holder has the shape of the letter T. The sample holder has, formed in the end thereof, a gold pad for affixing a sample, and the gold pad has a multilayer structure composed of a nickel layer and a gold layer arranged in this order from the sample holder surface. In the T-shaped head part of the sample holder, the four wiring leads are spaced wider from each other.
    • 提供了一种样品保持器结构,其可以在电检测电子自旋共振光谱法中减少由电磁感应等产生的电流噪声。 还提供了用于生产该结构的方法。 用于检测电子自旋共振装置的样品架的材料是FR-4树脂,氧化铝,玻璃或特氟隆。 样品架具有形成在其表面上的四个布线引线。 四个布线引线各自具有由从样品保持器表面按顺序排列的镍层,金层和抗蚀剂层构成的三层结构,并且样品架具有字母T的形状。 样品保持器在其末端形成有用于固定样品的金垫,并且金垫具有由样品保持器表面依次排列的镍层和金层构成的多层结构。 在样品架的T形头部分中,四个布线引线彼此间隔开。