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1. 发明授权

US08258024B2 Display device and method of manufacturing the same 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US08258024B2
公开(公告)日：2012-09-04
申请号：US12606284
申请日：2009-10-27
申请人： Mieko Matsumura , Mutsuko Hatano , Yoshiaki Toyota , Takuo Kaitoh
发明人： Mieko Matsumura , Mutsuko Hatano , Yoshiaki Toyota , Takuo Kaitoh
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： H01L27/1288 , H01L27/1214 , H01L27/3262 , H01L29/04 , H01L29/78696
摘要： The display device having a thin film transistor formed on a substrate including a display portion is provided. The thin film transistor including: a gate electrode; a gate insulating film formed so as to cover the gate electrode; a semiconductor laminated film formed on top the gate insulating film so as to extend over the gate electrode, the semiconductor laminated film being formed by laminating at least a polycrystalline semiconductor film and an amorphous semiconductor film, a first electrode and a second electrode disposed on top of the semiconductor laminated film so as to be opposed to each other across a region superposing the gate electrode. In the display device, the semiconductor laminated film is formed immediately below a wiring extending from the first electrode and immediately below a wiring extending from the second electrode.
摘要翻译：提供具有形成在包括显示部分的基板上的薄膜晶体管的显示装置。该薄膜晶体管包括：栅电极; 形成为覆盖所述栅电极的栅极绝缘膜; 半导体层叠膜，形成在所述栅极绝缘膜的顶部上，以在所述栅极上延伸，所述半导体层叠膜通过层叠至少多晶半导体膜和非晶半导体膜，第一电极和设置在顶部的第二电极而形成的半导体层叠膜，以跨越叠加栅电极的区域彼此相对。在显示装置中，半导体层叠膜形成在从第一电极延伸的布线的正下方并且紧接在从第二电极延伸的布线的下方。

2. 发明授权

US08482003B2 Image display unit 有权
标题翻译：图像显示单元
公开(公告)号：US08482003B2
公开(公告)日：2013-07-09
申请号：US11874955
申请日：2007-10-19
申请人： Mieko Matsumura , Yoshiaki Toyota , Takeshi Sato , Mutsuko Hatano
发明人： Mieko Matsumura , Yoshiaki Toyota , Takeshi Sato , Mutsuko Hatano
IPC分类号： H01L31/00
CPC分类号： H01L29/4908 , G09G3/3233 , G09G2300/0842 , G09G2300/0861 , H01L27/124 , H01L27/1255 , H01L27/3244 , H01L29/41733 , H01L51/56
摘要： An image display unit is provided for which it is possible to reduce the number of ion plantation and photolithographic processes required to manufacture the device. A gate electrode GT is a laminated structure of a thin bottom layer metal film GMB and a top layer metal film GMT. A top electrode of a storage capacitor Cst is formed of the bottom layer metal film GMB and ion implantation for the top electrode is performed at the same time as the ion implantation of source-drain electrodes. The gate electrode of a PMOSTFT of the device is also formed with the bottom layer metal GMB, and the ion implantation for threshold adjustment is performed by using the same resist.
摘要翻译：提供了一种图像显示单元，可以减少制造装置所需的离子种植和光刻工艺的数量。栅电极GT是薄底层金属膜GMB和顶层金属膜GMT的层叠结构。存储电容器Cst的顶部电极由底层金属膜GMB形成，并且与源极 - 漏极电极的离子注入同时进行用于顶部电极的离子注入。器件的PMOSTFT的栅极也由底层金属GMB形成，并且通过使用相同的抗蚀剂来执行用于阈值调整的离子注入。

3. 发明申请

US20080093602A1 IMAGE DISPLAY UNIT AND METHOD FOR MANUFACUTRE THE SAME 有权
标题翻译：图像显示单元及其制造方法
公开(公告)号：US20080093602A1
公开(公告)日：2008-04-24
申请号：US11874955
申请日：2007-10-19
申请人： Mieko Matsumura , Yoshiaki Toyota , Takeshi Sato , Mutsuko Hatano
发明人： Mieko Matsumura , Yoshiaki Toyota , Takeshi Sato , Mutsuko Hatano
IPC分类号： H01L33/00
CPC分类号： H01L29/4908 , G09G3/3233 , G09G2300/0842 , G09G2300/0861 , H01L27/124 , H01L27/1255 , H01L27/3244 , H01L29/41733 , H01L51/56
摘要： The present invention provides an image display unit, which can be manufactured in shorter time by designing a thin-film transistor, by which it is possible to reduce the number of processes of ion implantation and photolithographic processes. A gate electrode GT is designed in a laminated structure of a thin bottom layer metal film GMB and a top layer metal film GMT, and a top electrode of a storage capacitor Cst is designed to have only the bottom layer metal film GMB. Ion implanter for the bottom electrode of the storage capacitor Cst is passed through the thin bottom layer metal film GMB, and ion implantation is performed at the same time as the ion implantation of source-drain electrodes. The gate electrode of PMOSTFT has also only the bottom layer metal GMB, and the ion implantation for threshold adjustment is performed by using the same resist. By designing the thin-film transistor and the storage capacitor in such structure, one process each can be reduced in the photolithographic process and in the ion implantation process, and an active matrix substrate for an image display unit can be manufactured in shorter time and at lower cost.
摘要翻译：本发明提供了一种图像显示单元，其可以通过设计薄膜晶体管在较短时间内制造，由此可以减少离子注入和光刻工艺的处理次数。栅电极GT被设计成薄底层金属膜GMB和顶层金属膜GMT的层叠结构，并且存储电容器Cst的顶电极被设计为仅具有底层金属膜GMB。用于存储电容器Cst的底部电极的离子注入机通过薄的底层金属膜GMB，并且在与源极 - 漏极电极的离子注入同时进行离子注入。 PMOSTFT的栅极也仅具有底层金属GMB，并且通过使用相同的抗蚀剂来执行用于阈值调整的离子注入。通过在这种结构中设计薄膜晶体管和存储电容器，可以在光刻工艺和离子注入工艺中减少一个工艺，并且可以在更短的时间和更短的时间内制造用于图像显示单元的有源矩阵基板降低成本。

4. 发明授权

US08139173B2 Liquid crystal display 有权
标题翻译：液晶显示器
公开(公告)号：US08139173B2
公开(公告)日：2012-03-20
申请号：US12216581
申请日：2008-07-08
申请人： Tetsufumi Kawamura , Takeshi Sato , Mutsuko Hatano , Mieko Matsumura
发明人： Tetsufumi Kawamura , Takeshi Sato , Mutsuko Hatano , Mieko Matsumura
IPC分类号： G02F1/133 , G02F1/1343
CPC分类号： G02F1/1368 , G02F1/136209 , G02F1/136227 , G02F2001/13613
摘要： A liquid crystal display, having an improved application of electric field to the molecules of liquid crystal, includes a substrate and a pixel array bonded to the surface of this substrate, and the pixel array includes at least a thin-film transistor and a pixel electrode connected with this thin-film transistor, and the pixel electrode is formed in a layer higher than the thin-film transistor in relation to the substrate.
摘要翻译：具有改善对液晶分子的电场应用的液晶显示器包括基板和与该基板的表面接合的像素阵列，像素阵列至少包括薄膜晶体管和像素电极与该薄膜晶体管连接，并且像素电极相对于衬底形成在比薄膜晶体管高的层中。

5. 发明申请

US20120318337A1 Solar Cell 审中-公开
标题翻译：太阳能电池
公开(公告)号：US20120318337A1
公开(公告)日：2012-12-20
申请号：US13521487
申请日：2012-02-17
申请人： Keiji Watanabe , Takashi Hattori , Mieko Matsumura , Ryuta Tsuchiya , Mutsuko Hatano
发明人： Keiji Watanabe , Takashi Hattori , Mieko Matsumura , Ryuta Tsuchiya , Mutsuko Hatano
IPC分类号： H01L31/076
CPC分类号： H01L31/075 , H01L31/022441 , H01L31/0504 , H01L31/0508 , H01L31/0512 , H01L31/1804 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： In a conventional solar cell, it has been difficult to ensure a sufficient light absorption and simultaneously to prevent current loss due to the reduction of the moving distance of electrons and holes. As a means for solving this difficulty, a plurality of a p-i-n junctions are stacked through an insulating film and are connected in parallel with each other using through-electrodes. In this case, the through-electrodes and the p-i-n junctions are connected through the p-layer or the n-layer, thereby moving electrons and holes in opposite directions and generating output current. In addition, the i-layer is made thicker than the p-layer and the n-layer in each of the p-i-n junctions, thereby ensuring a sufficient light absorption and simultaneously preventing current loss.
摘要翻译：在常规太阳能电池中，难以确保足够的光吸收并且同时防止由于电子和空穴的移动距离的减小导致的电流损耗。作为解决这个困难的手段，通过绝缘膜层叠多个p-i-n结，并且使用贯通电极彼此并联连接。在这种情况下，贯通电极和p-i-n结通过p层或n层连接，从而沿相反方向移动电子和空穴并产生输出电流。此外，i层比p-i-n结中的每一个中的p层和n层厚，从而确保足够的光吸收并同时防止电流损耗。

6. 发明申请

US20090040411A1 Liquid crystal display 有权
标题翻译：液晶显示器
公开(公告)号：US20090040411A1
公开(公告)日：2009-02-12
申请号：US12216581
申请日：2008-07-08
申请人： Tetsufumi Kawamura , Takeshi Sato , Mutsuko Hatano , Mieko Matsumura
发明人： Tetsufumi Kawamura , Takeshi Sato , Mutsuko Hatano , Mieko Matsumura
IPC分类号： G02F1/1368
CPC分类号： G02F1/1368 , G02F1/136209 , G02F1/136227 , G02F2001/13613
摘要： A liquid crystal display, having an improved application of electric field to the molecules of liquid crystal, includes a substrate and a pixel array bonded to the surface of this substrate, and the pixel array includes at least a thin-film transistor and a pixel electrode connected with this thin-film transistor, and the pixel electrode is formed in a layer higher than the thin-film transistor in relation to the substrate.
摘要翻译：具有改善对液晶分子的电场应用的液晶显示器包括基板和与该基板的表面接合的像素阵列，像素阵列至少包括薄膜晶体管和像素电极与该薄膜晶体管连接，并且像素电极相对于衬底形成在比薄膜晶体管高的层中。

7. 发明申请

US20080012023A1 THIN-FILM TRANSISTOR AND IMAGE DISPLAY DEVICE 有权
标题翻译：薄膜晶体管和图像显示装置
公开(公告)号：US20080012023A1
公开(公告)日：2008-01-17
申请号：US11761930
申请日：2007-06-12
申请人： Mieko MATSUMURA , Mutsuko Hatano , Mitsuhide Miyamoto
发明人： Mieko MATSUMURA , Mutsuko Hatano , Mitsuhide Miyamoto
IPC分类号： H01L29/06 , H01L29/786
CPC分类号： H01L29/78612 , H01L27/12 , H01L29/42384
摘要： In either of a source side and a drain side of an insular semiconductor thin film, a gate electrode is extended without a break along the contour of the insular semiconductor thin film to provide a branch closed circuit, thereby removing a current component path to server as a sub-channel in the edge of the insular semiconductor thin film, in order to eliminate current components due to the concentration of a gate electric field in silicon thin-film edges occurring in edges of an insular semiconductor thin film of top gate type thin-film transistors and a shift of threshold due to fixed charges in the periphery of the silicon thin-file edges.
摘要翻译：在岛状半导体薄膜的源极侧和漏极侧的任意一个中，栅电极沿着半导体薄膜的轮廓延伸而不发生断裂，从而提供分支闭合电路，从而将作为电流分量路径的电流消除为服务器，作为在岛状半导体薄膜的边缘的子通道中，为了消除由顶栅型薄膜的半导体薄膜的边缘出现的硅薄膜边缘中的栅极电场的集中而导致的电流成分，薄膜晶体管和由于硅薄文件边缘的外围的固定电荷引起的阈值偏移。

8. 发明授权

US08344382B2 Semiconductor device, manufacturing method thereof, and display apparatus using the semiconductor device 失效
标题翻译：半导体装置及其制造方法以及使用该半导体装置的显示装置
公开(公告)号：US08344382B2
公开(公告)日：2013-01-01
申请号：US13001428
申请日：2009-06-26
申请人： Junichi Hanna , Isao Suzumura , Mieko Matsumura , Mutsuko Hatano , Kenichi Onisawa , Masatoshi Wakagi , Etsuko Nishimura , Akiko Kagatsume
发明人： Junichi Hanna , Isao Suzumura , Mieko Matsumura , Mutsuko Hatano , Kenichi Onisawa , Masatoshi Wakagi , Etsuko Nishimura , Akiko Kagatsume
IPC分类号： H01L29/04 , H01L21/20
CPC分类号： H01L21/02422 , H01L21/02532 , H01L21/0262 , H01L21/02639 , H01L21/02645 , H01L27/1277 , H01L27/1281 , H01L27/3262 , H01L29/66742 , H01L29/78687
摘要： Provided is a method of promoting a deposition of semiconductor crystal nuclei on an insulating film such as a silicon oxide film even at a low temperature of 450° C. or lower in a reactive thermal CVD method. As one means thereof, a first semiconductor film is formed on an insulating substrate, and then semiconductor crystal nuclei are formed on parts of the first semiconductor film and simultaneously the first semiconductor film other than that in forming regions of the semiconductor crystal nuclei and their peripheries is removed by etching. Thereafter, a second semiconductor film is formed with using the semiconductor crystal nuclei as seeds.
摘要翻译：提供了即使在450℃以下的低温反应性热CVD法中也能够使半导体晶体核沉积在氧化硅膜等绝缘膜上的方法。作为其一种方法，在绝缘基板上形成第一半导体膜，然后在第一半导体膜的部分上形成半导体晶体核，并且同时形成第一半导体膜，而不是形成半导体晶体核的区域及其周边通过蚀刻去除。此后，使用半导体晶体核作为晶种形成第二半导体膜。

9. 发明申请

US20110108841A1 SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, AND DISPLAY APPARATUS USING THE SEMICONDUCTOR DEVICE 失效
标题翻译：半导体器件及其制造方法以及使用半导体器件的显示器件
公开(公告)号：US20110108841A1
公开(公告)日：2011-05-12
申请号：US13001428
申请日：2009-06-26
申请人： Junichi Hanna , Isao Suzumura , Mieko Matsumura , Mutsuko Hatano , Kenichi Onisawa , Masatoshi Wakagi , Etsuko Nishimura , Akiko Kagatsume
发明人： Junichi Hanna , Isao Suzumura , Mieko Matsumura , Mutsuko Hatano , Kenichi Onisawa , Masatoshi Wakagi , Etsuko Nishimura , Akiko Kagatsume
IPC分类号： H01L29/04 , H01L21/20
CPC分类号： H01L21/02422 , H01L21/02532 , H01L21/0262 , H01L21/02639 , H01L21/02645 , H01L27/1277 , H01L27/1281 , H01L27/3262 , H01L29/66742 , H01L29/78687
摘要： Provided is a method of promoting a deposition of semiconductor crystal nuclei on an insulating film such as a silicon oxide film even at a low temperature of 450° C. or lower in a reactive thermal CVD method. As one means thereof, a first semiconductor film is formed on an insulating substrate, and then semiconductor crystal nuclei are formed on parts of the first semiconductor film and simultaneously the first semiconductor film other than that in forming regions of the semiconductor crystal nuclei and their peripheries is removed by etching. Thereafter, a second semiconductor film is formed with using the semiconductor crystal nuclei as seeds.
摘要翻译：提供了即使在450℃以下的低温反应性热CVD法中也能够使半导体晶体核沉积在氧化硅膜等绝缘膜上的方法。作为其一种方法，在绝缘基板上形成第一半导体膜，然后在第一半导体膜的部分上形成半导体晶体核，并且同时形成第一半导体膜，而不是形成半导体晶体核的区域及其周边通过蚀刻去除。此后，使用半导体晶体核作为晶种形成第二半导体膜。

10. 发明授权

US07755142B2 Thin-film transistor and image display device 有权
标题翻译：薄膜晶体管和图像显示装置
公开(公告)号：US07755142B2
公开(公告)日：2010-07-13
申请号：US11761930
申请日：2007-06-12
申请人： Mieko Matsumura , Mutsuko Hatano , Mitsuhide Miyamoto
发明人： Mieko Matsumura , Mutsuko Hatano , Mitsuhide Miyamoto
IPC分类号： H01L27/01
CPC分类号： H01L29/78612 , H01L27/12 , H01L29/42384
摘要： In either of a source side and a drain side of an insular semiconductor thin film, a gate electrode is extended without a break along the contour of the insular semiconductor thin film to provide a branch closed circuit, thereby removing a current component path to server as a sub-channel in the edge of the insular semiconductor thin film, in order to eliminate current components due to the concentration of a gate electric field in silicon thin-film edges occurring in edges of an insular semiconductor thin film of top gate type thin-film transistors and a shift of threshold due to fixed charges in the periphery of the silicon thin-file edges.
摘要翻译：在岛状半导体薄膜的源极侧和漏极侧的任意一个中，栅电极沿着半导体薄膜的轮廓延伸而不发生断裂，从而提供分支闭合电路，从而将作为电流分量路径的电流消除为服务器，作为在岛状半导体薄膜的边缘的子通道中，为了消除由顶栅型薄膜的半导体薄膜的边缘出现的硅薄膜边缘中的栅极电场的集中而导致的电流成分，薄膜晶体管和由于硅薄文件边缘的外围的固定电荷引起的阈值偏移。

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