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1. 发明授权

US08258024B2 Display device and method of manufacturing the same 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US08258024B2
公开(公告)日：2012-09-04
申请号：US12606284
申请日：2009-10-27
申请人： Mieko Matsumura , Mutsuko Hatano , Yoshiaki Toyota , Takuo Kaitoh
发明人： Mieko Matsumura , Mutsuko Hatano , Yoshiaki Toyota , Takuo Kaitoh
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： H01L27/1288 , H01L27/1214 , H01L27/3262 , H01L29/04 , H01L29/78696
摘要： The display device having a thin film transistor formed on a substrate including a display portion is provided. The thin film transistor including: a gate electrode; a gate insulating film formed so as to cover the gate electrode; a semiconductor laminated film formed on top the gate insulating film so as to extend over the gate electrode, the semiconductor laminated film being formed by laminating at least a polycrystalline semiconductor film and an amorphous semiconductor film, a first electrode and a second electrode disposed on top of the semiconductor laminated film so as to be opposed to each other across a region superposing the gate electrode. In the display device, the semiconductor laminated film is formed immediately below a wiring extending from the first electrode and immediately below a wiring extending from the second electrode.
摘要翻译：提供具有形成在包括显示部分的基板上的薄膜晶体管的显示装置。该薄膜晶体管包括：栅电极; 形成为覆盖所述栅电极的栅极绝缘膜; 半导体层叠膜，形成在所述栅极绝缘膜的顶部上，以在所述栅极上延伸，所述半导体层叠膜通过层叠至少多晶半导体膜和非晶半导体膜，第一电极和设置在顶部的第二电极而形成的半导体层叠膜，以跨越叠加栅电极的区域彼此相对。在显示装置中，半导体层叠膜形成在从第一电极延伸的布线的正下方并且紧接在从第二电极延伸的布线的下方。

2. 发明授权

US08610868B2 Liquid crystal display device and manufacturing method thereof 有权
标题翻译：液晶显示装置及其制造方法
公开(公告)号：US08610868B2
公开(公告)日：2013-12-17
申请号：US13042490
申请日：2011-03-08
申请人： Terunori Saitou , Hidekazu Miyake , Takuo Kaitoh , Yoshiharu Owaku
发明人： Terunori Saitou , Hidekazu Miyake , Takuo Kaitoh , Yoshiharu Owaku
IPC分类号： G02F1/1345
CPC分类号： G02F1/13458 , G02F1/1333 , G02F1/136204 , G02F2001/133388 , G02F2202/103 , G02F2202/22
摘要： In order to prevent dielectric breakdown of TFT or an interlayer insulating film by static electricity with a reduced area at low cost, a liquid crystal display device has a configuration in which an interlayer insulating film and an a-Si film are formed in a display area and a control area inside terminals. Image signal lines and scan lines are insulated from each other through the interlayer insulating film and a-Si film in their intersections. On the other hand, only the interlayer insulating film is formed between static electricity protection lines and an earth line outside the terminals. When static electricity is induced, dielectric breakdown is caused to occur in the area outside the terminals. Thus, the display area and the control area are protected from the static electricity.
摘要翻译：为了以低成本减小面积的静电来防止TFT或层间绝缘膜的电介质击穿，液晶显示装置具有在显示区域中形成层间绝缘膜和a-Si膜的构造和端子内部的控制区域。图像信号线和扫描线通过其交叉点中的层间绝缘膜和a-Si膜彼此绝缘。另一方面，在静电保护线与端子外的接地线之间仅形成层间绝缘膜。当感应到静电时，导致端子外部的区域发生介电击穿。因此，显示区域和控制区域被保护免受静电。

3. 发明授权

US08421940B2 Display device and manufacturing method thereof 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US08421940B2
公开(公告)日：2013-04-16
申请号：US12405396
申请日：2009-03-17
申请人： Takeshi Noda , Takuo Kaitoh , Hidekazu Miyake , Takahiro Kamo
发明人： Takeshi Noda , Takuo Kaitoh , Hidekazu Miyake , Takahiro Kamo
IPC分类号： G02F1/136
CPC分类号： H01L27/1251 , H01L27/1229 , H01L27/1285
摘要： A display device includes a TFT substrate in which a plurality of first TFT elements each having an active layer of an amorphous semiconductor and a plurality of second TFT elements each having an active layer of a polycrystalline semiconductor are disposed on a surface of an insulating substrate, wherein the first TFT element and the second TFT element each have a structure with a gate electrode, a gate insulating film, and the active layer stacked in this order on the surface of the insulating substrate and a source electrode and a drain electrode both connected to the active layer via a contact layer above the active layer, and the active layer of the second TFT element has a thickness of more than 60 nm in a position where the contact layer is stacked.
摘要翻译：显示装置包括TFT基板，其中在绝缘基板的表面上设置有多个具有非晶半导体的有源层的第一TFT元件和多个具有多晶半导体的有源层的第二TFT元件，其中所述第一TFT元件和所述第二TFT元件各自具有在所述绝缘基板的表面上依次堆叠的栅电极，栅极绝缘膜和所述有源层的结构，以及源电极和漏电极都连接到通过有源层上方的接触层的有源层和第二TFT元件的有源层在接触层堆叠的位置具有大于60nm的厚度。

4. 发明申请

US20120081628A1 LIQUID CRYSTAL DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：液晶显示装置及其制造方法
公开(公告)号：US20120081628A1
公开(公告)日：2012-04-05
申请号：US13252478
申请日：2011-10-04
申请人： Hidekazu NITTA , Hidekazu Miyake , Takuo Kaitoh
发明人： Hidekazu NITTA , Hidekazu Miyake , Takuo Kaitoh
IPC分类号： G02F1/136 , H01L33/62
CPC分类号： G02F1/1368 , H01L29/66765 , H01L29/78618 , H01L29/78669
摘要： A liquid crystal display device intended for increasing the ON-current of a TFT in the pixel while suppressing variation of the ON-current, in which a semiconductor layer and a first n+-a-Si layer in the TFT are formed continuously by plasma CVD. The semiconductor layer and the first n+-a-Si layer are patterned simultaneously. Then, a second n+-a-Si layer is formed so as to cover the upper surface of the first n+-a-Si layer and the side portion of the semiconductor layer. The ON-current can be increased and variation of the ON-current of the TFT can be decreased by forming the first n+-a-Si layer continuously over the semiconductor layer.
摘要翻译：一种液晶显示装置，用于增加像素中的TFT的导通电流，同时抑制其中通过等离子体CVD连续地形成TFT中的半导体层和第一n + -a-Si层的导通电流的变化。同时对半导体层和第一n + a-Si层进行图案化。然后，形成第二n + a-Si层，以覆盖第一n + -a-Si层的上表面和半导体层的侧部。通过在半导体层上连续地形成第一n + -a-Si层，可以增加导通电流并且可以减小TFT的导通电流的变化。

5. 发明授权

US08124974B2 Display device 有权
标题翻译：显示设备
公开(公告)号：US08124974B2
公开(公告)日：2012-02-28
申请号：US12536097
申请日：2009-08-05
申请人： Takeshi Noda , Toshio Miyazawa , Takuo Kaitoh , Takumi Shigaki
发明人： Takeshi Noda , Toshio Miyazawa , Takuo Kaitoh , Takumi Shigaki
IPC分类号： H01L33/00
CPC分类号： G02F1/13624 , G02F2202/104
摘要： A display device is provided in which at least first and second thin film transistors are formed on a substrate, including a gate electrode formed on a semiconductor layer with a gate insulating film in between. The semiconductor layer is divided into individual regions for each film transistor, and is provided with a common region and LDD regions between a channel region and a drain region, as well as between the channel region and a source region. The gate electrode is formed as an integrated gate electrode for the first and second thin film transistors that faces the common region, the channel region and the LDD regions of the first thin film transistor and the channel region and the LDD regions of the second thin film transistor.
摘要翻译：提供了一种显示装置，其中至少第一和第二薄膜晶体管形成在基板上，包括形成在其间具有栅极绝缘膜的半导体层上的栅电极。半导体层被分成用于每个薄膜晶体管的单个区域，并且在沟道区域和漏极区域之间以及在沟道区域和源极区域之间设置有公共区域和LDD区域。栅电极形成为第一和第二薄膜晶体管的集成栅电极，其面对公共区域，第一薄膜晶体管的沟道区域和LDD区域以及第二薄膜的沟道区域和LDD区域晶体管。

6. 发明申请

US20110024763A1 DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US20110024763A1
公开(公告)日：2011-02-03
申请号：US12844887
申请日：2010-07-28
申请人： Takeshi NODA , Toshio Miyazawa , Takuo Kaitoh , Daisuke Sonoda
发明人： Takeshi NODA , Toshio Miyazawa , Takuo Kaitoh , Daisuke Sonoda
IPC分类号： H01L33/16 , H01L21/336
CPC分类号： H01L29/78621 , G02F1/1368 , H01L29/66765 , H01L29/78627
摘要： A display device which has thin film transistors, wherein a semiconductor layer includes a first layer, second layers and third layers, the first layer has a channel region, the second layers are an impurity layer, the third layers are a low-concentration impurity layer, the second layers have connection portions connected with an electrodes, the third layers are formed to annularly surround the second layers, a channel-region-side edge portion out of edge portions of the third layer is in contact with the first layer, the edge portions of the third layer but the channel-region-side edge portion are in contact with an interlayer insulation film, the second layers have a first region where the second layer overlaps with a gate electrode and a second region where the second layer does not overlap with the gate electrode, and the connection portion is in the second region.
摘要翻译：一种具有薄膜晶体管的显示装置，其中半导体层包括第一层，第二层和第三层，第一层具有沟道区，第二层是杂质层，第三层是低浓度杂质层所述第二层具有与电极连接的连接部，所述第三层形成为环绕所述第二层，所述第三层的边缘部分之外的沟道区域侧边缘部与所述第一层接触，所述边缘第三层的第二层与沟道区侧边缘部分接触层间绝缘膜，第二层具有第一区域，其中第二层与栅电极重叠，第二区与第二层不重叠与栅电极连接，连接部位在第二区域。

7. 发明申请

US20100032673A1 LIQUID CRYSTAL DISPLAY DEVICE 有权
标题翻译：液晶显示装置
公开(公告)号：US20100032673A1
公开(公告)日：2010-02-11
申请号：US12534904
申请日：2009-08-04
申请人： Terunori SAITOU , Yoshiharu Owaku , Takuo Kaitoh , Hidekazu Miyake
发明人： Terunori SAITOU , Yoshiharu Owaku , Takuo Kaitoh , Hidekazu Miyake
IPC分类号： H01L33/00
CPC分类号： H01L29/78696 , H01L27/1229 , H01L27/1251 , H01L29/04
摘要： A liquid crystal display device includes a semiconductor layer which is formed of a poly-Si layer and an a-Si layer and formed above a gate electrode with a gate insulating film interposed therebetween. A source electrode or a drain electrode is formed above the semiconductor layer. An n+Si layer is formed between the source electrode or the drain electrode and the semiconductor layer. Since ends of the source electrode or the drain electrode are formed inside ends of the semiconductor layer, leak current at the ends of the semiconductor layer can be reduced.
摘要翻译：液晶显示装置包括由多晶硅层和a-Si层形成的半导体层，并且形成在栅电极之上，其间插入有栅极绝缘膜。源电极或漏电极形成在半导体层的上方。在源极或漏电极与半导体层之间形成n + Si层。由于源电极或漏电极的端部形成在半导体层的内侧端部，所以能够减小半导体层的端部处的漏电流。

8. 发明授权

US07524685B2 Manufacturing method of a display device 有权
标题翻译：显示装置的制造方法
公开(公告)号：US07524685B2
公开(公告)日：2009-04-28
申请号：US11509739
申请日：2006-08-25
申请人： Takuo Kaitoh , Eiji Oue , Toshihiko Itoga
发明人： Takuo Kaitoh , Eiji Oue , Toshihiko Itoga
IPC分类号： H01L21/66
CPC分类号： H01L21/02675 , H01L21/2026 , H01L27/1285 , H01L27/1296 , H01L29/04
摘要： The present invention provides a manufacturing method of a display device which can decrease the lowering of a yield rate of the display device attributed to the aggregations generated by pseudo single crystallization of a silicon film. A manufacturing method of a display device includes a semiconductor film reforming step which reforms a semiconductor film into a second state in which the semiconductor film possesses elongated crystalline particles by radiating a laser beam to the semiconductor film in a first state, an aggregation detecting step which detects the aggregation of the semiconductor film which is generated in the semiconductor film reforming step, and a defect determination step which determines a product as a defective product when a position of the aggregation is present in the inside of the predetermined region and determines the product as a good product when the position of the aggregation is present outside the predetermined region.
摘要翻译：本发明提供一种显示装置的制造方法，其能够降低归因于硅膜的伪单晶化产生的聚集的显示装置的成品率的降低。显示装置的制造方法包括：半导体膜重整工序，其将第一状态下的半导体膜照射激光，将半导体膜改性为半导体膜具有细长结晶粒子的第二状态，聚集检测步骤，检测在半导体膜重整步骤中产生的半导体膜的聚集，以及缺陷确定步骤，当聚集的位置存在于预定区域的内部时，将产品确定为不合格品，并将产品确定为当聚集的位置存在于预定区域之外时，产品是良好的。

9. 发明申请

US20090065777A1 Display Device and Manufacturing Method Therefor 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US20090065777A1
公开(公告)日：2009-03-12
申请号：US12208371
申请日：2008-09-11
申请人： Eiji Oue , Takuo Kaitoh , Hidekazu Miyake , Toshio Miyazawa , Yuichiro Takashina
发明人： Eiji Oue , Takuo Kaitoh , Hidekazu Miyake , Toshio Miyazawa , Yuichiro Takashina
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L27/1229 , H01L27/1214 , H01L27/1274 , H01L29/66765 , H01L29/78678
摘要： In a display device of the present invention which forms thin film transistors on a substrate, the thin film transistor comprises: a silicon nitride film which is formed on the substrate in a state that the silicon nitride film covers a gate electrode; a silicon oxide film which is selectively formed on the silicon nitride film; a semiconductor layer which is formed at least on an upper surface of the silicon oxide film and includes a pseudo single crystal layer or a polycrystalline layer; and a drain electrode and a source electrode which are formed on an upper surface of the semiconductor layer by way of a contact layer, wherein either one of the pseudo single crystal layer and the poly-crystalline layer is formed by crystallizing the amorphous silicon layer, and a peripheral-side wall surface of the pseudo single crystal layer or the polycrystalline layer is contiguously constituted with a peripheral-side wall surface of the silicon oxide film below the pseudo single crystal layer or the polycrystalline layer without a stepped portion.
摘要翻译：在本发明的在基板上形成薄膜晶体管的显示装置中，薄膜晶体管包括：在氮化硅膜覆盖栅电极的状态下在基板上形成的氮化硅膜; 选择性地形成在氮化硅膜上的氧化硅膜; 形成在所述氧化硅膜的上表面上的半导体层，其包含伪单晶层或多晶层; 以及通过接触层形成在半导体层的上表面上的漏电极和源电极，其中通过使非晶硅层结晶来形成伪单晶层和多晶层中的任一个，并且伪单晶层或多晶层的外围侧壁表面在不具有台阶部分的伪单晶层或多晶层下方的氧化硅膜的周向侧壁表面附近构成。

10. 发明申请

US20050266594A1 Manufacturing method for display device 审中-公开
标题翻译：显示装置的制造方法
公开(公告)号：US20050266594A1
公开(公告)日：2005-12-01
申请号：US11138471
申请日：2005-05-27
申请人： Takuo Kaitoh , Takahiro Kamo , Hidekazu Miyake , Toshihiko Itoga
发明人： Takuo Kaitoh , Takahiro Kamo , Hidekazu Miyake , Toshihiko Itoga
IPC分类号： G02F1/1368 , H01L21/20 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/786 , H01L51/50 , H05B33/14
CPC分类号： H01L27/127 , H01L27/1214 , H01L27/1229 , H01L27/1285
摘要： A manufacturing method for a display device includes: a first thin film transistor that is formed in a first region over a substrate and has a first threshold value according to doping of a first impurity into a semiconductor layer in a channel region; and a second thin film transistor that is formed in a second region over the substrate and has a second threshold value, which is different from the first threshold value, according to doping of a second impurity into a semiconductor layer in a channel region, wherein a crystallized semiconductor layer, which is used in the channel region of the second thin film transistor, is obtained by subjecting a semiconductor layer in the second region to fusing treatment in a state in which the second impurity is applied over the semiconductor layer.
摘要翻译：一种显示装置的制造方法，包括：第一薄膜晶体管，其形成在衬底上的第一区域中，并且具有根据第一杂质掺杂到沟道区域中的半导体层中的第一阈值; 以及第二薄膜晶体管，其形成在所述衬底上的第二区域中，并且具有根据第二杂质掺杂到沟道区域中的半导体层中的与所述第一阈值不同的第二阈值，其中，在第二薄膜晶体管的沟道区域中使用的结晶半导体层通过在第二区域中的半导体层在半导体层上施加第二杂质的状态下进行熔合处理来获得。

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