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    • 32. 发明授权
    • Radiation absorbing polymer and synthesis thereof
    • 辐射吸收聚合物及其合成
    • US06184305B2
    • 2001-02-06
    • US09079565
    • 1998-05-15
    • Wen-Bing KanAkihiko TokidaKayo AramakiHatsuyuki TanakaKen Kimura
    • Wen-Bing KanAkihiko TokidaKayo AramakiHatsuyuki TanakaKen Kimura
    • C08F2008
    • C08F8/34C08F8/30C09D5/32G03F7/091
    • A radiation absorbing polymer is characterized by having a main chain copolymer containing recurring units of dicarboxylic acid or carboxylic anhydride group with an organic chromophore bonded to the carboxyl group through methylene or alkylene linkage group, where the organic chromophore is bonded to the carboxyl group by esterification reaction. Residual carboxyl groups of the radiation absorbing polymer can optionally be amidized and/or imidized with an aromatic compounds having a reactive amino group. When the photoresist is applied on the antireflective coating and is exposed by radiation such as deep ultraviolet radiation, a resist pattern with high resolving power is formed, which is not affected by standing wave upon manufacturing integrated circuit elements.
    • 辐射吸收聚合物的特征在于具有含有二羧酸或羧酸酐基团的重复单元的主链共聚物和通过亚甲基或亚烷基连接基与羧基键合的有机发色团,其中有机发色团通过酯化键合到羧基上 反应。 辐射吸收聚合物的残余羧基可以任选地被具有反应性氨基的芳族化合物酰胺化和/或酰亚胺化。 当光致抗蚀剂被施加在抗反射涂层上并且通过诸如深紫外线辐射的辐射曝光时,形成具有高分辨能力的抗蚀剂图案,其在制造集成电路元件时不受驻波的影响。
    • 33. 发明授权
    • Clamp band
    • 夹带
    • US4701982A
    • 1987-10-27
    • US910823
    • 1986-09-23
    • Yutaka MatsunoTadanobu KumagaiHatsuyuki Tanaka
    • Yutaka MatsunoTadanobu KumagaiHatsuyuki Tanaka
    • F16B2/08F16B2/18B65D63/00
    • F16B2/185F16B2/08Y10T24/1412Y10T24/1424Y10T24/2147
    • A clamp band which includes a strip member having an intermediate portion formed to substantially conform to the outline of an article to be fastened and two ends projected outward from the intermediate portion and a lever member welded to the two ends of the strip member. One of the two ends of the strip member extends approximately tangentially from the intermediate portion and the other extends to make an acute angle. The lever member is welded to the outside of the end located nearer the intermediate portion of the these ends when two ends of the strip member are brought down. The lever member is formed to contact closely an outer peripheral surface of the strip member and has high hardness edge portions extending longitudinally thereof.
    • 一种夹带,其包括带状构件,所述带状构件具有形成为基本上符合要紧固的物品的轮廓的中间部分和从中间部分向外突出的两个端部,以及焊接到条状构件的两端的杆构件。 带状构件的两端中的一个从中间部分大致切向延伸,另一端延伸成锐角。 当带状构件的两端被拉下时,杠杆构件焊接到位于这些端部的中间部分附近的端部的外侧。 杠杆构件形成为紧密地接触带状构件的外周表面并具有纵向延伸的高硬度边缘部分。
    • 34. 发明授权
    • Radiation absorbing polymer, composition for radiation absorbing coating, radiation absorbing coating and application thereof as anti-reflective coating
    • 辐射吸收聚合物,用于辐射吸收涂层的组合物,辐射吸收涂层及其作为抗反射涂层的应用
    • US06737492B2
    • 2004-05-18
    • US10229219
    • 2002-08-27
    • Wen-Bing KangMunirathna PadmanabanHatsuyuki TanakaKen KimuraTakanori KudoGeorg Pawlowski
    • Wen-Bing KangMunirathna PadmanabanHatsuyuki TanakaKen KimuraTakanori KudoGeorg Pawlowski
    • C08F11636
    • C09D4/00C08F246/00G03F7/091C08F220/26C08F220/58C08F212/00
    • A radiation absorbing polymer having chemically bonded thereto a radiation absorbing dye, which has high absorption at a predetermined wavelength radiation, which shows good adhesion to a substrate and good thin film-forming, which has no dependence upon resists, which is soluble in a solvent for photoresists but becomes insoluble after being baked; a composition for radiation absorbing coating containing this polymer, and a radiation absorbing coating such as an anti-reflective coating formed from this composition are disclosed. The radiation absorbing polymer comprises a copolymer containing at least both a recurring unit composed of a monomer containing a keto group and a divalent group (preferably a methylene group) in its side chain and a recurring unit composed of a monomer containing an organic chromophore bonded directly or through a linkage group to the main chain. This radiation absorbing polymer is dissolved in a solvent such as alcohol, aromatic hydrocarbon, ketone, ester, etc., and the resulting solution is applied to a wafer and baked to form a radiation absorbing coating such as an anti-reflective coating. On this coating is coated, for example, a chemically amplified resist. This coated substrate is then exposed to deep UV rays and is developed to form a fine resist pattern excluding the influence of standing wave.
    • 一种辐射吸收聚合物,其化学键合有辐射吸收染料,该辐射吸收染料在预定波长辐射下具有高吸收性,其对基底具有良好的粘附性,并且与溶于溶剂的抗蚀剂无关的良好的薄膜形成 用于光致抗蚀剂,但在烘烤后变得不溶; 公开了含有这种聚合物的辐射吸收涂层用组合物和由该组合物形成的抗反射涂层等吸收辐射涂层。 辐射吸收聚合物包括共聚物,其至少包含由侧链中含有酮基和二价基团(优选亚甲基)的单体构成的重复单元,以及由含有直接键合的有机发色团的单体构成的重复单元 或通过连接组到主链。 将这种辐射吸收聚合物溶于醇,芳族烃,酮,酯等溶剂中,将所得溶液施加到晶片上并烘烤以形成抗辐射涂层等吸收辐射的涂层。 在该涂层上涂覆例如化学放大抗蚀剂。 然后将该涂覆的基材暴露于深紫外线,并显影以形成除了驻波的影响之外的精细抗蚀剂图案。
    • 36. 发明授权
    • Radiation absorbing polymer, composition for radiation absorbing coating, radiation absorbing coating and application thereof as anti-reflective coating
    • 辐射吸收聚合物,用于辐射吸收涂层的组合物,辐射吸收涂层及其作为抗反射涂层的应用
    • US06468718B1
    • 2002-10-22
    • US09244358
    • 1999-02-04
    • Wen-Bing KangMunirathna PadmanabanHatsuyuki TanakaKen KimuraTakanori KudoGeorg Pawlowski
    • Wen-Bing KangMunirathna PadmanabanHatsuyuki TanakaKen KimuraTakanori KudoGeorg Pawlowski
    • G03C173
    • C09D4/00C08F246/00G03F7/091C08F220/26C08F220/58C08F212/00
    • A radiation absorbing polymer having chemically bonded thereto a radiation absorbing dye, which has high absorption at a predetermined wavelength radiation, which shows good adhesion to a substrate and good thin film-forming, which has no dependence upon resists, which is soluble in a solvent for photoresists but becomes insoluble after being baked; a composition for radiation absorbing coating containing this polymer, and a radiation absorbing coating such as an anti-reflective coating formed from this composition are disclosed. The radiation absorbing polymer comprises a copolymer containing at least both a recurring unit composed of a monomer containing a keto group and a divalent group (preferably a methylene group) in its side chain and a recurring unit composed of a monomer containing an organic chromophore bonded directly or through a linkage group to the main chain. This radiation absorbing polymer is dissolved in a solvent such as alcohol, aromatic hydrocarbon, ketone, ester, etc., and the resulting solution is applied to a wafer and baked to form a radiation absorbing coating such as an anti-reflective coating. On this coating is coated, for example, a chemically amplified resist. This coated substrate is then exposed to deep UV rays and is developed to form a fine resist pattern excluding the influence of standing wave.
    • 一种辐射吸收聚合物,其化学键合有辐射吸收染料,该辐射吸收染料在预定波长辐射下具有高吸收性,其对基底具有良好的粘附性,并且与溶于溶剂的抗蚀剂无关的良好的薄膜形成 用于光致抗蚀剂,但在烘烤后变得不溶; 公开了含有这种聚合物的辐射吸收涂层用组合物和由该组合物形成的抗反射涂层等吸收辐射涂层。 辐射吸收聚合物包括共聚物,其至少包含由侧链中含有酮基和二价基团(优选亚甲基)的单体构成的重复单元,以及由含有直接键合的有机发色团的单体构成的重复单元 或通过连接组到主链。 将这种辐射吸收聚合物溶于醇,芳族烃,酮,酯等溶剂中,将所得溶液施加到晶片上并烘烤以形成抗辐射涂层等吸收辐射的涂层。 在该涂层上涂覆例如化学放大抗蚀剂。 然后将该涂覆的基材暴露于深紫外线,并显影以形成除了驻波的影响之外的精细抗蚀剂图案。
    • 37. 发明授权
    • Method for forming resist pattern
    • 形成抗蚀剂图案的方法
    • US06465161B1
    • 2002-10-15
    • US09600612
    • 2000-07-17
    • Wen-Bing KangShoko MatsuoKen KimuraYoshinori NishiwakiHatsuyuki Tanaka
    • Wen-Bing KangShoko MatsuoKen KimuraYoshinori NishiwakiHatsuyuki Tanaka
    • G03F700
    • G03F7/16G03F7/0045G03F7/091
    • In a process for manufacturing integrated circuit elements or the like by photolithography, a method for reducing detrimental influence on resist shape due to properties of a substrate or acidity of substrate surface in case where a chemically amplified resist or the like is used as a photoresist, and a substrate-treating agent composition to be used for this method are described. The substrate-treating agent composition comprises a solution containing a salt between at least one basic compound selected from among primary, secondary and tertiary amines and nitrogen-containing heterocyclic compounds and an organic acid such as a sulfonic acid or a carboxylic acid. This composition is coated on a substrate surface having thereon a bottom anti-reflective coating such as SiON layer, baked and, if necessary washed, then a chemically amplified resist is coated on the thus-treated substrate, exposed and developed to form a resist pattern on the substrate.
    • 在通过光刻制造集成电路元件等的方法中,使用化学放大型抗蚀剂等作为光致抗蚀剂的情况下,由于基板性质或基板表面的酸度降低对抗蚀剂形状的有害影响的方法, 并描述用于该方法的底物处理剂组合物。 底物处理剂组合物包含含有至少一种选自伯胺,仲胺和叔胺的碱性化合物和含氮杂环化合物之间的盐和有机酸如磺酸或羧酸的溶液。 将该组合物涂布在其上具有诸如SiON层的底部抗反射涂层的基底表面上,烘烤并且如果需要洗涤,然后将化学放大的抗蚀剂涂覆在如此处理的基底上,暴露并显影以形成抗蚀剂图案 在基板上。
    • 38. 发明授权
    • Antireflection or light-absorbing coating composition and polymer therefor
    • 防反射或光吸收涂料组合物及其聚合物
    • US06329117B1
    • 2001-12-11
    • US09319129
    • 1999-08-09
    • Munirathna PadmanabanWen-Bing KangGeorg PawlowskiKen KimuraHatsuyuki Tanaka
    • Munirathna PadmanabanWen-Bing KangGeorg PawlowskiKen KimuraHatsuyuki Tanaka
    • G03C173
    • G03F7/091Y10S430/106Y10S430/107Y10S430/108Y10S430/111
    • A composition for an anti-reflective coating or a light absorbing coating, which shows good light absorption for lights of 100-450 nm in wavelength, suffers neither footing nor intermixing, and has excellent storage stability and step coverage, and novel copolymers to be used therein. The novel polymers comprise acrylic or methacrylic copolymers or terpolymers, at least having both recurring units (1) wherein an amino group- or hydroxyl-group containing organic chromophore capable of absorbing lights of 100 to 450 nm in wavelength is chemically bound to the carbonyl group bound to a carbon atom in the main chain, directly or through —R1NHCXY— (wherein R1 represents an alkylene group, X represents O or S, Y represents O or NR6, R6 represents H, a substituted or non-substituted, straight chain or cyclic alkyl group or a phenylene group) and for example recurring units (2) wherein a double bond-or epoxy group-containing alkyl group is chemically bound to the carboxyl or oxygen group bound to a carbon atom in the main chain. The composition containing the copolymer is coated on a wafer to form a bottom anti-reflective coating and, after coating thereon a photoresist, deep UV exposure and development are conducted to form a resist image with high resolution.
    • 用于抗反射涂层或光吸收涂层的组合物对于波长为100-450nm的光显示出良好的光吸收,既不起脚也不混合,并且具有优异的储存稳定性和阶梯覆盖率,以及要使用的新型共聚物 其中。 该新型聚合物包含至少具有两个重复单元(1)的丙烯酸或甲基丙烯酸共聚物或三元共聚物,其中能够吸收波长为100至450nm的光的含氨基或羟基的有机发色团与羰基化学键合 直接或通过-R1NHCXY-(其中R1表示亚烷基,X表示O或S,Y表示O或NR6,R6表示H,取代或未取代的直链或未取代的直链或 环状烷基或亚苯基),例如其中双键或含环氧基的烷基与与主链中的碳原子结合的羧基或氧基化学键合的重复单元(2)。 将包含共聚物的组合物涂覆在晶片上以形成底部抗反射涂层,并且在其上涂覆光致抗蚀剂之后,进行深紫外线曝光和显影以形成具有高分辨率的抗蚀剂图像。