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31. 发明授权

US07612080B2 GTPase inhibitors and use thereof for controlling platelet hyperactivity 失效
标题翻译： GTP酶抑制剂及其用于控制血小板多动症的用途
公开(公告)号：US07612080B2
公开(公告)日：2009-11-03
申请号：US11283556
申请日：2005-11-18
申请人： Yi Zheng , Huzoor Akbar , David A. Williams , Wieslaw Adam Mazur
发明人： Yi Zheng , Huzoor Akbar , David A. Williams , Wieslaw Adam Mazur
IPC分类号： A61K31/506
CPC分类号： A61K31/506
摘要： The preferred embodiments generally relate to methods and compositions that affect the GTP-binding activity of members of the Rho family GTPases, preferably Rac (Rac1, Rac2 and/or Rac3), such compositions include compounds that modulate the GTP/GDP exchange activity, along with uses for the compounds including screening for compounds which recognize Rac GTPase, and methods of treating pathological conditions associated or related to a Rho family GTPase, including Rac. The preferred embodiments also relate to methods of using such compounds, or derivatives thereof, e.g., in therapeutics, diagnostics, and as research tools.
摘要翻译：优选的实施方案通常涉及影响Rho家族GTP酶，优选Rac（Rac1，Rac2和/或Rac3）成员的GTP结合活性的方法和组合物，所述组合物包括沿着GTP / GDP交换活性调节GTP / GDP交换活性的化合物用于化合物的用途，包括筛选识别Rac GTP酶的化合物，以及治疗与Rho家族GTP酶（包括Rac）相关或相关的病理状况的方法。优选实施方案还涉及使用这些化合物或其衍生物的方法，例如在治疗学，诊断学和研究工具中。

32. 发明授权

US07611996B2 Multi-stage curing of low K nano-porous films 有权
标题翻译：低K纳米多孔膜的多阶段固化
公开(公告)号：US07611996B2
公开(公告)日：2009-11-03
申请号：US11085416
申请日：2005-03-21
申请人： Francimar Schmitt , Yi Zheng , Kang Sub Yim , Sang H. Ahn , Lester A. D'Cruz , Dustin W. Ho , Alexandros T. Demos , Li-Qun Xia , Derek R. Witty , Hichem M'Saad
发明人： Francimar Schmitt , Yi Zheng , Kang Sub Yim , Sang H. Ahn , Lester A. D'Cruz , Dustin W. Ho , Alexandros T. Demos , Li-Qun Xia , Derek R. Witty , Hichem M'Saad
IPC分类号： H01L21/469 , H01L21/31
CPC分类号： H01L21/76825 , C23C16/401 , C23C16/56 , H01L21/02126 , H01L21/02203 , H01L21/02208 , H01L21/02274 , H01L21/02304 , H01L21/02351 , H01L21/02362 , H01L21/3105 , H01L21/3121 , H01L21/31695 , H01L21/76811 , H01L21/76813 , H01L21/7682 , H01L2221/1047 , Y10T428/249978
摘要： Embodiments in accordance with the present invention relate to multi-stage curing processes for chemical vapor deposited low K materials. In certain embodiments, a combination of electron beam irradiation and thermal exposure steps may be employed to control selective outgassing of porogens incorporated into the film, resulting in the formation of nanopores. In accordance with one specific embodiment, a low K layer resulting from reaction between a silicon-containing component and a non-silicon containing component featuring labile groups, may be cured by the initial application of thermal energy, followed by the application of radiation in the form of an electron beam.
摘要翻译：根据本发明的实施方案涉及用于化学气相沉积的低K材料的多阶段固化方法。在某些实施方案中，可以采用电子束照射和热暴露步骤的组合来控制掺入薄膜中的孔原子的选择性除气，从而形成纳米孔。根据一个具体实施方案，由含硅组分和含有不稳定基团的不含硅组分之间的反应产生的低K层可以通过初始施加热能来固化，随后在形式的电子束。

33. 发明授权

US07576951B2 Perpendicular magnetic write head having a magnetic write pole with a concave trailing edge 有权
标题翻译：具有磁写入磁极的垂直磁性写头具有凹形后缘
公开(公告)号：US07576951B2
公开(公告)日：2009-08-18
申请号：US11411556
申请日：2006-04-25
申请人： Donald G. Allen , Amanda Baer , Michael Feldbaum , Hung-Chin Guthrie , Wen-Chien David Hsiao , Yimin Hsu , Ming Jiang , Yinshi Liu , Aaron Neuhaus , Vladimir Nikitin , Aron Pentek , Katalin Pentek , Yi Zheng
发明人： Donald G. Allen , Amanda Baer , Michael Feldbaum , Hung-Chin Guthrie , Wen-Chien David Hsiao , Yimin Hsu , Ming Jiang , Yinshi Liu , Aaron Neuhaus , Vladimir Nikitin , Aron Pentek , Katalin Pentek , Yi Zheng
IPC分类号： G11B5/127
CPC分类号： G11B5/3116 , G11B5/11 , G11B5/1278 , G11B5/1871 , G11B5/3146 , G11B5/315 , G11B5/3163
摘要： A magnetic write head for perpendicular magnetic recording having a write pole with a concave trailing edge. The magnetic write pole can have a trapezoidal shape with first and second laterally opposed sides that are further apart at the trailing edge than at the leading edge. The write head may or may not include a magnetic trailing shield, and if a trailing shield is included it is separated from the trailing edge by a non-magnetic write gap layer. The concave trailing edge improves magnetic performance such as by improving the transition curvature. A method for constructing the write head includes forming a magnetic write pole by forming a mask structure over a deposited write pole material, the mask structure having an alumina hard mask and an image transfer layer such as DURAMIDE®. An alumina fill layer is then deposited and a chemical mechanical polish is performed to open up the image transfer layer. A reactive on etch is performed to remove the image transfer layer and a reactive ion mill or reactive ion etch is performed to remove the alumina hard mask and form a concave surface on the write pole.
摘要翻译：用于垂直磁记录的磁写头，具有带有凹后缘的写极。磁性写入极可以具有梯形形状，其中第一和第二横向相对侧在后缘处比在前缘处更远地分开。写头可以包括或可以不包括磁性后屏蔽，并且如果包括后屏蔽，则其通过非磁性写间隙层与后缘分离。凹形后边缘提高磁性能，例如通过改善转变曲率。构成写入头的方法包括通过在沉积的写入极材料上形成掩模结构来形成磁性写入极，掩模结构具有氧化铝硬掩模和诸如DURAMIDE的图像转移层。然后沉积氧化铝填充层，并执行化学机械抛光以打开图像转印层。执行反应性蚀刻以去除图像转印层，并且执行反应性离子磨或反应离子蚀刻以除去氧化铝硬掩模并在写入极上形成凹面。

34. 发明申请

US20090184091A1 DIAMOND-LIKE CARBON (DLC) HARDMASK AND METHODS OF FABRICATION USING SAME 有权
标题翻译：类金刚石（DLC）HARDMASK及其制造方法
公开(公告)号：US20090184091A1
公开(公告)日：2009-07-23
申请号：US12018084
申请日：2008-01-22
申请人： Yi Zheng
发明人： Yi Zheng
IPC分类号： B44C1/22
CPC分类号： G11B5/3116 , G11B5/3163
摘要： A method according to one embodiment comprises forming a thin film layer; forming a hardmask layer above the thin film layer, the hardmask layer comprising laminated layers of diamond-like carbon; removing a portion of the hardmask layer; and removing a portion of the thin film layer that is unprotected by the hardmask layer. A method according to another embodiment comprises forming a thin film layer; forming a patterned hardmask layer above the thin film layer, the hardmask layer comprising laminated layers of diamond-like carbon; and implanting a material into a portion of the thin film layer that is unprotected by the patterned hardmask layer. Additional methods are disclosed.
摘要翻译：根据一个实施方案的方法包括形成薄膜层; 在所述薄膜层上形成硬掩模层，所述硬掩模层包括类金刚石碳的叠层; 去除硬掩模层的一部分; 以及去除未被硬掩模层保护的薄膜层的一部分。根据另一实施例的方法包括形成薄膜层; 在薄膜层上形成图案化的硬掩模层，硬掩模层包括类金刚石碳的层压层; 以及将材料注入到未被图案化的硬掩模层保护的薄膜层的一部分中。公开了另外的方法。

35. 发明申请

US20090168257A1 INDEPENDENT SIDE SHIELD AND TOP SHIELD THROAT HEIGHT CONTROL FOR HIGH LINEAR DENSITY WRAP AROUND SHIELD WRITE HEAD 有权
标题翻译：独立的封面和顶层屏蔽高度控制高密度缠绕在屏蔽写头
公开(公告)号：US20090168257A1
公开(公告)日：2009-07-02
申请号：US11966086
申请日：2007-12-28
申请人： Wen-Chien David Hsiao , Yinshi Liu , Yi Zheng
发明人： Wen-Chien David Hsiao , Yinshi Liu , Yi Zheng
IPC分类号： G11B5/33
CPC分类号： G11B5/3163 , G11B5/1278 , G11B5/3116 , G11B5/315
摘要： A magnetic write head for perpendicular magnetic recording. The magnetic write head includes a write pole having a pole tip region and a flared region. The write pole also has a trailing, wrap-around magnetic shield that is separated from the sides of the write pole by a non-magnetic side gap layer. The write head is formed such that the side gap spacing is larger in the flared region than in the pole tip region. This varying gap spacing can be formed by depositing a non-magnetic material using a collimated sputter deposition aligned substantially perpendicular to the air bearing surface. This collimated sputtering deposits the non-magnetic material more readily on the sides of the write pole in the flared region than in the pole tip region.
摘要翻译：用于垂直磁记录的磁写头。磁写头包括具有极尖区域和扩口区域的写入极。写极还具有通过非磁性侧间隙层与写入极的两侧分离的后围环绕磁屏蔽。写头形成为使得扩张区域中的侧间隙间隔大于极尖区域中的间隙间距。可以通过使用基本垂直于空气轴承表面排列的准直溅射沉积物沉积非磁性材料来形成这种变化的间隙间隔。这种准直的溅射使非磁性材料更容易地在扩展区域中的写入极的侧面上比在磁极尖端区域中沉积。

36. 发明授权

US07554764B2 Lift-off method for forming write pole of a magnetic write head and write pole formed thereby 失效
标题翻译：用于形成磁写头和由此形成的写磁极的写极的剥离方法
公开(公告)号：US07554764B2
公开(公告)日：2009-06-30
申请号：US11399820
申请日：2006-04-07
申请人： Hamid Balamane , Jyh-Shuey Lo , Yi Zheng
发明人： Hamid Balamane , Jyh-Shuey Lo , Yi Zheng
IPC分类号： G11B5/147
CPC分类号： G11B5/3163 , G11B5/1278 , Y10T29/49043
摘要： A lift-off method for forming write pole of a magnetic write head and write pole formed thereby is disclosed. A write pole including a hard mask on a top portion of the write pole is formed. A layer of material for reinforcing sidewall fencing of the write pole is deposited. Portions of the layer of material on top of the write pole are removed while the layer of material at the sidewall fencing is left to provide support to the sidewall fencing.
摘要翻译：公开了一种用于形成磁写头和由此形成的写磁极的写极的剥离方法。形成在写入极的顶部包括硬掩模的写入极。一层用于加强写柱的侧壁围栏的材料被沉积。除去写磁极顶部的材料层的部分，同时留下侧壁围栏处的材料层以向侧壁围栏提供支撑。

37. 发明授权

US07536777B2 Use of metal capped seed layers for the fabrication of perpendicular thin film heads 失效
标题翻译：使用金属盖种子层制造垂直薄膜头
公开(公告)号：US07536777B2
公开(公告)日：2009-05-26
申请号：US11595764
申请日：2006-11-10
申请人： Hieu Lam , Patrick Rush Webb , Yi Zheng
发明人： Hieu Lam , Patrick Rush Webb , Yi Zheng
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： C25D5/022 , C23C28/021 , C23C28/023 , C23C28/04 , C23C28/343 , G11B5/112 , G11B5/1278 , G11B5/3146 , G11B5/315 , G11B5/3163 , Y10T29/49039 , Y10T29/49043 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： Methods and structures for the fabrication of perpendicular thin film heads are disclosed. Prior to the deposition of shield structures, capped seed layers having a dual layer structure are utilized, improving photo resist adhesion and plated shield adhesion, without the need to deposit, then remove, traditional inorganic anti-reflection coatings prior to shield plating.
摘要翻译：公开了用于制造垂直薄膜头的方法和结构。在沉积屏蔽结构之前，利用具有双层结构的封盖种子层，在屏蔽电镀之前，不需要沉积，然后去除传统的无机抗反射涂层，从而提高光致抗蚀剂粘附性和电镀屏蔽粘附性。

38. 发明申请

US20090117407A1 SHORT FLARE DEFINITION BY ADDITIVE PROCESS FOR PERPENDICULAR HEAD 有权
标题翻译：通过添加剂进行快速定义
公开(公告)号：US20090117407A1
公开(公告)日：2009-05-07
申请号：US11934687
申请日：2007-11-02
申请人： Yi Zheng , Yimin Hsu , Wen-Chien David Hsiao , Ming Jiang , Aron Pentek , Sue Siyang Zhang , Edward Hin Pong Lee , Hung-Chin Guthrie , Ning Shi , Vladimir Nikitin , Prabodh Ratnaparkhi , Yinshi Liu
发明人： Yi Zheng , Yimin Hsu , Wen-Chien David Hsiao , Ming Jiang , Aron Pentek , Sue Siyang Zhang , Edward Hin Pong Lee , Hung-Chin Guthrie , Ning Shi , Vladimir Nikitin , Prabodh Ratnaparkhi , Yinshi Liu
IPC分类号： B05D5/12 , G11B5/33
CPC分类号： G11B5/3166 , G11B5/112 , G11B5/1278 , G11B5/3116 , G11B5/3146 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052 , Y10T428/11 , Y10T428/1186
摘要： A method for manufacturing a magnetic write head for perpendicular magnetic recording. The method includes forming a write pole, and then depositing a refill layer. A mask structure can be formed over the writ pole and refill layer, the mask structure being configured to define a stitched pole. An ion milling or reactive ion milling can then be performed to remove portions of the refill layer that are not protected by the mask structure. Then a magnetic material can be deposited to form a stitched write pole that defines a secondary flare point. The stitched pole can also be self aligned with an electrical lapping guide in order to accurately locate the front edge of the secondary flare point relative to the air bearing surface of the write head.
摘要翻译：一种用于制造用于垂直磁记录的磁写头的方法。该方法包括形成写极，然后沉积补充层。掩模结构可以形成在写极和再填充层上，掩模结构被配置为限定缝合极。然后可以执行离子铣或反应离子研磨以去除未被掩模结构保护的部分填充层。然后可以沉积磁性材料以形成限定二次闪光点的缝合写入极。缝合的杆也可以与电动研磨引导件自对准，以便相对于写入头的空气轴承表面精确地定位二次扩张点的前边缘。

39. 发明申请

US20080316652A1 SIMULTANEOUS POLE-TIP AND SIDE SHIELD FABRICATION AND INTEGRATED ELG 有权
标题翻译：同时提供和侧面制造和集成ELG
公开(公告)号：US20080316652A1
公开(公告)日：2008-12-25
申请号：US11766711
申请日：2007-06-21
申请人： Christian Rene Bonhote , Thomas Dudley Boone, JR. , Ming Jiang , Jordan Asher Katine , Quang Le , Yinshi Liu , Xhavin Sinha , Sue Siyang Zhang , Yi Zheng
发明人： Christian Rene Bonhote , Thomas Dudley Boone, JR. , Ming Jiang , Jordan Asher Katine , Quang Le , Yinshi Liu , Xhavin Sinha , Sue Siyang Zhang , Yi Zheng
IPC分类号： G11B5/10
CPC分类号： G11B5/3166 , G11B5/112 , G11B5/1278 , G11B5/3146 , G11B5/315 , G11B5/3169 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A method for manufacturing a write pole for perpendicular magnetic recording for accurately defining a side shield throat height and write pole flare point. The method includes the formation of a magnetic structure that provides an electronic lapping guide as well as providing the structure for both the side shields and the write pole. The magnetic structure includes a write pole portion and first and second side shield portions. The side shields portions are magnetically connected with the write pole portion in a region in front of an intended air hearing surface plane (e.g. in the direction from which lapping will progress). The side shields portions are each separated from the write pole portion in a region behind the intended air bearing surface plane by notches that terminate at a desired location relative to the intended air bearing surface plane and which open up in a region behind the intended air bearing surface plane.
摘要翻译：一种制造用于垂直磁记录的写磁极的方法，用于准确地限定侧屏蔽喉高度和写磁极点。该方法包括形成提供电子研磨导轨的磁性结构，以及为侧屏和写极提供结构。磁性结构包括写极部分和第一和第二侧面屏蔽部分。侧面屏蔽部分在预期的空气听力表面（例如沿着研磨过程的方向）前面的区域中与写入极部分磁性连接。侧面屏蔽部分分别与预期的空气支承面平面后面的区域中的写入磁极部分分开，该凹口终止于相对于预期的空气轴承表面平面的期望位置，并且在预期的空气轴承后面的区域中开口表面。

40. 发明授权

US07429493B2 Method for fabricating a magnetic head for perpendicular recording using a CMP lift-off and resistant layer 失效
标题翻译：使用CMP剥离层和耐电层制造用于垂直记录的磁头的方法
公开(公告)号：US07429493B2
公开(公告)日：2008-09-30
申请号：US11184364
申请日：2005-07-18
申请人： Ming Jiang , Sue Siyang Zhang , Yi Zheng
发明人： Ming Jiang , Sue Siyang Zhang , Yi Zheng
IPC分类号： H01L21/00
CPC分类号： G11B5/3163 , G11B5/1278
摘要： A method using a CMP resistant hardmask in a process of fabricating a pole piece for a magnetic head is described. A set of layers used as the mask for milling the pole piece preferably includes a CMP resistant hardmask of silicon dioxide, a resist hardmask, an upper hardmask and a photoresist mask respectively. A multi-step reactive-ion etching (RIE) process is preferably used to sequentially remove the excess materials in the layer stack to ultimately define the multilayer mask for the pole piece. The excess pole piece material is then milled away. The wafer is then refilled with a nonmagnetic material such as alumina. A CMP liftoff is used to remove the resist hardmask. The material for the CMP resistant hardmask is selected to have a high resistance to the CMP liftoff process in comparison to the refill material. The CMP resistant hardmask is preferably then removed by a RIE process.
摘要翻译：描述了在制造用于磁头的极片的工艺中使用CMP耐磨硬掩模的方法。作为用于研磨极片的掩模的一组层优选分别包括二氧化硅的CMP耐磨硬掩模，抗蚀剂硬掩模，上硬掩模和光致抗蚀剂掩模。优选使用多步反应离子蚀刻（RIE）工艺来顺序地去除层叠中的多余材料以最终限定极片的多层掩模。然后将多余的极片材料磨掉。然后用非磁性材料如氧化铝再填充晶片。 CMP剥离用于去除抗蚀剂硬掩模。选择用于CMP耐磨硬掩模的材料以与补充材料相比具有对CMP剥离工艺的高抗性。然后优选通过RIE工艺去除CMP耐磨硬掩模。

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