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1. 发明授权

US07611996B2 Multi-stage curing of low K nano-porous films 有权
标题翻译：低K纳米多孔膜的多阶段固化
公开(公告)号：US07611996B2
公开(公告)日：2009-11-03
申请号：US11085416
申请日：2005-03-21
申请人： Francimar Schmitt , Yi Zheng , Kang Sub Yim , Sang H. Ahn , Lester A. D'Cruz , Dustin W. Ho , Alexandros T. Demos , Li-Qun Xia , Derek R. Witty , Hichem M'Saad
发明人： Francimar Schmitt , Yi Zheng , Kang Sub Yim , Sang H. Ahn , Lester A. D'Cruz , Dustin W. Ho , Alexandros T. Demos , Li-Qun Xia , Derek R. Witty , Hichem M'Saad
IPC分类号： H01L21/469 , H01L21/31
CPC分类号： H01L21/76825 , C23C16/401 , C23C16/56 , H01L21/02126 , H01L21/02203 , H01L21/02208 , H01L21/02274 , H01L21/02304 , H01L21/02351 , H01L21/02362 , H01L21/3105 , H01L21/3121 , H01L21/31695 , H01L21/76811 , H01L21/76813 , H01L21/7682 , H01L2221/1047 , Y10T428/249978
摘要： Embodiments in accordance with the present invention relate to multi-stage curing processes for chemical vapor deposited low K materials. In certain embodiments, a combination of electron beam irradiation and thermal exposure steps may be employed to control selective outgassing of porogens incorporated into the film, resulting in the formation of nanopores. In accordance with one specific embodiment, a low K layer resulting from reaction between a silicon-containing component and a non-silicon containing component featuring labile groups, may be cured by the initial application of thermal energy, followed by the application of radiation in the form of an electron beam.
摘要翻译：根据本发明的实施方案涉及用于化学气相沉积的低K材料的多阶段固化方法。在某些实施方案中，可以采用电子束照射和热暴露步骤的组合来控制掺入薄膜中的孔原子的选择性除气，从而形成纳米孔。根据一个具体实施方案，由含硅组分和含有不稳定基团的不含硅组分之间的反应产生的低K层可以通过初始施加热能来固化，随后在形式的电子束。

2. 发明授权

US07547643B2 Techniques promoting adhesion of porous low K film to underlying barrier layer 有权
标题翻译：促进多孔低K膜粘附到底层阻挡层的技术
公开(公告)号：US07547643B2
公开(公告)日：2009-06-16
申请号：US11046090
申请日：2005-01-28
申请人： Francimar Schmitt , Alexandros T. Demos , Derek R. Witty , Hichem M'Sadd , Sang H. Ahn , Lester A. D'Cruz , Khaled A. Elsheref , Zhenjiang Cui
发明人： Francimar Schmitt , Alexandros T. Demos , Derek R. Witty , Hichem M'Sadd , Sang H. Ahn , Lester A. D'Cruz , Khaled A. Elsheref , Zhenjiang Cui
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/31633 , C23C16/401 , C23C16/56 , H01L21/02126 , H01L21/02203 , H01L21/02274 , H01L21/02304 , H01L21/02351 , H01L21/02362 , H01L21/31058 , H01L21/31695 , H01L21/76801 , H01L21/76811 , H01L21/76813 , H01L21/7682 , H01L21/76825 , H01L21/76828 , H01L21/76832 , H01L2221/1047
摘要： Adhesion of a porous low K film to an underlying barrier layer is improved by forming an intermediate layer lower in carbon content, and richer in silicon oxide, than the overlying porous low K film. This adhesion layer can be formed utilizing one of a number of techniques, alone or in combination. In one approach, the adhesion layer can be formed by introduction of a rich oxidizing gas such as O2/CO2/etc. to oxidize Si precursors immediately prior to deposition of the low K material. In another approach, thermally labile chemicals such as alpha-terpinene, cymene, and any other non-oxygen containing organics are removed prior to low K film deposition. In yet another approach, the hardware or processing parameters, such as the manner of introduction of the non-silicon containing component, may be modified to enable formation of an oxide interface prior to low K film deposition. In still another approach, parameters of ebeam treatment such as dosage, energy, or the use of thermal annealing, may be controlled to remove carbon species at the interface between the barrier and the low K film. In a further approach, a pre-treatment plasma may be introduced prior to low k deposition to enhance heating of the barrier interface, such that a thin oxide interface is formed when low K deposition gases are introduced and the low K film is deposited.
摘要翻译：通过与上覆的多孔低K膜形成碳含量较低的中间层和富含氧化硅的多孔低K膜与下面的阻挡层的粘附性得到改善。可以利用单独或组合的多种技术之一形成该粘合层。在一种方法中，粘合层可以通过引入富氧化气体如O 2 / CO 2等形成。以在沉积低K材料之前立即氧化Si前体。在另一种方法中，在低K膜沉积之前，除去热不稳定化学品如α-萜品烯，伞花烃和任何其它不含氧的有机物。在另一种方法中，可以修改硬件或处理参数，例如引入非硅含量组分的方式，以使得能够在低K膜沉积之前形成氧化物界面。在另一种方法中，可以控制ebeam处理的参数，例如剂量，能量或使用热退火，以去除阻挡层和低K膜之间的界面处的碳物质。在另一种方法中，可以在低k沉积之前引入预处理等离子体以增强阻挡界面的加热，使得当引入低K沉积气体并沉积低K膜时，形成薄氧化物界面。

3. 发明授权

US07297376B1 Method to reduce gas-phase reactions in a PECVD process with silicon and organic precursors to deposit defect-free initial layers 有权
标题翻译：用硅和有机前体在PECVD工艺中减少气相反应以沉积无缺陷初始层的方法
公开(公告)号：US07297376B1
公开(公告)日：2007-11-20
申请号：US11483842
申请日：2006-07-07
申请人： Kang Sub Yim , Kelvin Chan , Nagarajan Rajagopalan , Josephine Ju-Hwei Chang Liu , Sang H. Ahn , Yi Zheng , Sang In Yi , Vu Ngoc Tran Nguyen , Alexandros T. Demos
发明人： Kang Sub Yim , Kelvin Chan , Nagarajan Rajagopalan , Josephine Ju-Hwei Chang Liu , Sang H. Ahn , Yi Zheng , Sang In Yi , Vu Ngoc Tran Nguyen , Alexandros T. Demos
IPC分类号： H05H1/24
CPC分类号： C23C16/029 , C23C16/401 , C23C16/56
摘要： A method for depositing a low dielectric constant film is provided by positioning a substrate within a processing chamber having a powered electrode, and flowing into the processing chamber an initiation gas mixture of a flow rate of one or more organosilicon compounds and a flow rate of one or more oxidizing gases to deposit an initiation layer by applying an RF power to the electrode. The organosilicon compound flow rate is then ramped-up to a final flow rate to deposit a first transition layer, upon which one or more porogen compounds is introduced and the flow rate porogen compound is ramped up to a final deposition rate while depositing a second transition layer. A porogen doped silicon oxide layer is then deposited by flowing the final porogen and organosilicon flow rates until the RF power is turned off.
摘要翻译：通过将基板定位在具有动力电极的处理室内，并且将一种或多种有机硅化合物的流速和流速为1的起始气体混合物流入处理室，从而提供了一种沉积低介电常数膜的方法或更多的氧化气体，以通过向电极施加RF功率来沉积起始层。然后将有机硅化合物流速升高至最终流速以沉积第一过渡层，在该第一过渡层上引入一种或多种致孔剂化合物，并且将流速致孔剂化合物倾斜至最终沉积速率，同时沉积第二过渡层层。然后通过流动最终致孔剂和有机硅流速来沉积致孔剂掺杂的氧化硅层，直到RF功率关闭。

4. 发明授权

US07718081B2 Techniques for the use of amorphous carbon (APF) for various etch and litho integration schemes 失效
标题翻译：使用无定形碳（APF）进行各种蚀刻和光刻积分方案的技术
公开(公告)号：US07718081B2
公开(公告)日：2010-05-18
申请号：US11422031
申请日：2006-06-02
申请人： Wei Liu , Jim Zhongyi He , Sang H. Ahn , Meihua Shen , Hichem M'Saad , Wendy H. Yeh , Christopher D. Bencher
发明人： Wei Liu , Jim Zhongyi He , Sang H. Ahn , Meihua Shen , Hichem M'Saad , Wendy H. Yeh , Christopher D. Bencher
IPC分类号： C23F1/00 , B44C1/22 , G03C5/00 , H01L21/302 , C03C25/68
CPC分类号： G03F7/091 , H01L21/0276 , H01L21/0332 , H01L21/0337 , H01L21/0338 , H01L21/3081 , H01L21/3086 , H01L21/3088 , H01L21/3146
摘要： A method of etching a substrate is provided. The method of etching a substrate includes transferring a pattern into the substrate using a double patterned amorphous carbon layer on the substrate as a hardmask. Optionally, a non-carbon based layer is deposited on the amorphous carbon layer as a capping layer before the pattern is transferred into the substrate.
摘要翻译：提供蚀刻基板的方法。蚀刻基板的方法包括使用基板上的双图案化非晶碳层作为硬掩模将图案转印到基板中。任选地，在将图案转移到基底内之前，将非碳基层沉积在无定形碳层上作为覆盖层。

5. 发明授权

US06927178B2 Nitrogen-free dielectric anti-reflective coating and hardmask 失效
标题翻译：无氮电介质抗反射涂层和硬掩模
公开(公告)号：US06927178B2
公开(公告)日：2005-08-09
申请号：US10732904
申请日：2003-12-10
申请人： Bok Hoen Kim , Sudha Rathi , Sang H. Ahn , Christopher D. Bencher , Yuxiang May Wang , Hichem M'Saad , Mario D. Silvetti , Miguel Fung , Keebum Jung , Lei Zhu
发明人： Bok Hoen Kim , Sudha Rathi , Sang H. Ahn , Christopher D. Bencher , Yuxiang May Wang , Hichem M'Saad , Mario D. Silvetti , Miguel Fung , Keebum Jung , Lei Zhu
IPC分类号： C23C16/40 , H01L21/027 , H01L21/311 , H01L21/314 , H01L21/316 , H01L21/768 , H01L21/31 , H01L21/469
CPC分类号： H01L21/76828 , C23C16/401 , H01L21/02126 , H01L21/022 , H01L21/02211 , H01L21/02216 , H01L21/02274 , H01L21/0276 , H01L21/31144 , H01L21/314 , H01L21/31633 , H01L21/7681 , H01L21/76826 , Y10S438/952
摘要： Methods are provided for depositing a dielectric material. The dielectric material may be used for an anti-reflective coating or as a hardmask. In one aspect, a method is provided for processing a substrate including introducing a processing gas comprising a silane-based compound and an oxygen and carbon containing compound to the processing chamber and reacting the processing gas to deposit a nitrogen-free dielectric material on the substrate. The dielectric material comprises silicon and oxygen. In another aspect, the dielectric material forms one or both layers in a dual layer anti-reflective coating.
摘要翻译：提供了沉积电介质材料的方法。电介质材料可用于抗反射涂层或硬掩模。一方面，提供了一种处理基板的方法，包括将包含硅烷类化合物和含氧和碳的化合物的处理气体引入处理室，并使处理气体在基板上沉积无氮介电材料。介电材料包括硅和氧。在另一方面，电介质材料在双层抗反射涂层中形成一层或两层。

6. 发明授权

US07064078B2 Techniques for the use of amorphous carbon (APF) for various etch and litho integration scheme 有权
标题翻译：用于无定形碳（APF）的各种蚀刻和光刻积分方案的技术
公开(公告)号：US07064078B2
公开(公告)日：2006-06-20
申请号：US10768724
申请日：2004-01-30
申请人： Wei Liu , Jim Zhongyi He , Sang H. Ahn , Meihua Shen , Hichem M'Saad , Wendy H. Yeh , Chistopher D. Bencher
发明人： Wei Liu , Jim Zhongyi He , Sang H. Ahn , Meihua Shen , Hichem M'Saad , Wendy H. Yeh , Chistopher D. Bencher
IPC分类号： H01L21/302
CPC分类号： G03F7/091 , H01L21/0276 , H01L21/0332 , H01L21/0337 , H01L21/0338 , H01L21/3081 , H01L21/3086 , H01L21/3088 , H01L21/3146
摘要： A method of etching a substrate is provided. The method of etching a substrate includes transferring a pattern into the substrate using a double patterned amorphous carbon layer on the substrate as a hardmask. Optionally, a non-carbon based layer is deposited on the amorphous carbon layer as a capping layer before the pattern is transferred into the substrate.
摘要翻译：提供蚀刻基板的方法。蚀刻基板的方法包括使用基板上的双图案化非晶碳层作为硬掩模将图案转印到基板中。任选地，在将图案转移到基底内之前，将非碳基层沉积在无定形碳层上作为覆盖层。

7. 发明授权

US07105460B2 Nitrogen-free dielectric anti-reflective coating and hardmask 有权
标题翻译：无氮电介质抗反射涂层和硬掩模
公开(公告)号：US07105460B2
公开(公告)日：2006-09-12
申请号：US10193489
申请日：2002-07-11
申请人： Bok Hoen Kim , Sudha Rathi , Sang H. Ahn , Christopher D. Bencher , Yuxiang May Wang , Hichem M'Saad , Mario D. Silvetti
发明人： Bok Hoen Kim , Sudha Rathi , Sang H. Ahn , Christopher D. Bencher , Yuxiang May Wang , Hichem M'Saad , Mario D. Silvetti
IPC分类号： H01L21/31
CPC分类号： H01L21/76834 , C23C16/401 , H01L21/02126 , H01L21/02211 , H01L21/02216 , H01L21/02274 , H01L21/31144 , H01L21/314 , H01L21/31633 , H01L21/7681 , H01L21/76826 , H01L21/76828 , H01L21/76829
摘要： Methods are provided for depositing a dielectric material. The dielectric material may be used for an anti-reflective coating or as a hardmask. In one aspect, a method is provided for processing a substrate including introducing a processing gas comprising a silane-based compound and an organosilicon compound to the processing chamber and reacting the processing gas to deposit a nitrogen-free dielectric material on the substrate. The dielectric material comprises silicon and oxygen.
摘要翻译：提供了沉积电介质材料的方法。电介质材料可用于抗反射涂层或硬掩模。一方面，提供了一种处理基板的方法，包括将包含硅烷类化合物和有机硅化合物的处理气体引入处理室，并使处理气体在基板上沉积无氮介电材料。介电材料包括硅和氧。

8. 发明授权

US08211626B2 Maintenance of photoresist activity on the surface of dielectric arcs for 90 nm feature sizes 失效
标题翻译：在90nm特征尺寸的介质电弧表面上保持光致抗蚀剂活性
公开(公告)号：US08211626B2
公开(公告)日：2012-07-03
申请号：US11639274
申请日：2006-12-13
申请人： Sang H. Ahn , Sudha Rathi , Heraldo L. Bothelho
发明人： Sang H. Ahn , Sudha Rathi , Heraldo L. Bothelho
IPC分类号： G03F7/30 , H05H1/30
CPC分类号： G03F7/322 , G03F7/091 , G03F7/16
摘要： We have determined that it is necessary to remove hydroxyl groups from the surface of a DARC over which a CAR photoresist is applied, to reduce poisoning of the photoresist during imaging. The poisoning is reduced by treating the surface of the DARC film with a hydrogen or helium-containing plasma which is capable of removing the hydroxyl groups.
摘要翻译：我们已经确定需要从其上涂覆有CAR光致抗蚀剂的DARC的表面除去羟基，以减少成像期间光致抗蚀剂的中毒。通过用能够去除羟基的氢或氦等离子体处理DARC膜的表面来减少中毒。

9. 发明授权

US06559074B1 Method of forming a silicon nitride layer on a substrate 有权
标题翻译：在基板上形成氮化硅层的方法
公开(公告)号：US06559074B1
公开(公告)日：2003-05-06
申请号：US10015713
申请日：2001-12-12
申请人： Steven A. Chen , Xianzhi Tao , Shulin Wang , Lee Luo , Kegang Huang , Sang H. Ahn
发明人： Steven A. Chen , Xianzhi Tao , Shulin Wang , Lee Luo , Kegang Huang , Sang H. Ahn
IPC分类号： H01L2131
CPC分类号： C23C16/345 , H01L21/3185 , Y10S438/958
摘要： A silicon nitride layer is formed over transistor gates while the processing temperature is relatively high, typically at least 500° C., and the pressure is relatively high, typically at least 50 Torr, to obtain a relatively high rate of formation of the silicon nitride layer. Processing conditions are controlled so as to more uniformly form the silicon nitride layer. Generally, the ratio of the NH3 gas to the silicon-containing gas by volume is selected sufficiently high so that, should the surface have a low region between transistor gates which is less than 0.15 microns wide and have a height-to-width ratio of at least 1.0, as well as an entirely flat area of at least 5 microns by 5 microns, the layer forms at a rate of not more than 25% faster on the flat area than on a base of the low region.
摘要翻译：在晶体管栅极上形成氮化硅层，而处理温度相对较高，通常至少为500℃，压力相对较高，通常为至少50托，以获得较高的氮化硅形成速率层。控制处理条件以更均匀地形成氮化硅层。通常，体积的NH 3气体与含硅气体的比例被选择得足够高，使得如果表面在小于0.15微米宽的晶体管栅极之间具有低区域，并且具有高度 - 宽度比至少为1.0，以及至少5微米至5微米的完全平坦的区域，该层在平坦区域上比在低区域的基底上以不超过25％的速率形成。

10. 发明授权

US08088563B2 Reduction in photoresist footing undercut during development of feature sizes of 120NM or less 失效
标题翻译：在120NM以下的特征尺寸开发期间减少光刻胶底切底切
公开(公告)号：US08088563B2
公开(公告)日：2012-01-03
申请号：US11603698
申请日：2006-11-21
申请人： Sang H. Ahn , Sudha Rathi , Heraldo L. Bothelho
发明人： Sang H. Ahn , Sudha Rathi , Heraldo L. Bothelho
IPC分类号： G03F7/30 , H05H1/30
CPC分类号： G03F7/322 , G03F7/091 , G03F7/16
摘要： We have traced the detachment of photoresist during development of patterned features in the range of about 90 nm and smaller to a combination of the reduced “foot print” of the pattern on the underlying substrate and to the contact angle between the underlying substrate surface and the developing reagent. By maintaining a contact angle of about 30 degrees or greater, the detachment of the photoresist from the underlying substrate can be avoided for photoresists including feature sizes in the range of about 90 nm. We have achieved an increased contact angle between the DARC surface and a water-based CAR photoresist developer while simultaneously reducing CAR poisoning by treating the surface of the DARC after film formation.
摘要翻译：我们已经在大约90nm和更小范围内的图案化特征的显影过程中追踪了光致抗蚀剂的分离，使得在下面的衬底上的图案的减少的“脚印”与下面的衬底表面之间的接触角的组合开发试剂。通过保持大约30度或更大的接触角，可以避免光致抗蚀剂从下面的衬底上的分离，所述光致抗蚀剂包括在约90nm范围内的特征尺寸。我们已经实现了DARC表面和水性CAR光刻胶显影剂之间的增加的接触角，同时通过在成膜后处理DARC的表面同时减少CAR中毒。

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