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1. 发明申请

US20070236832A1 Lift-off method for forming write pole of a magnetic write head and write pole formed thereby 失效
标题翻译：用于形成磁写头和由此形成的写磁极的写极的剥离方法
公开(公告)号：US20070236832A1
公开(公告)日：2007-10-11
申请号：US11399820
申请日：2006-04-07
申请人： Hamid Balamane , Jyh-Shuey Lo , Yi Zheng
发明人： Hamid Balamane , Jyh-Shuey Lo , Yi Zheng
IPC分类号： G11B5/147
CPC分类号： G11B5/3163 , G11B5/1278 , Y10T29/49043
摘要： A lift-off method for forming write pole of a magnetic write head and write pole formed thereby is disclosed. A write pole including a hard mask on a top portion of the write pole is formed. A layer of material for reinforcing sidewall fencing of the write pole is deposited. Portions of the layer of material on top of the write pole are removed while the layer of material at the sidewall fencing is -left to provide support to the sidewall fencing.
摘要翻译：公开了一种用于形成磁写头和由此形成的写磁极的写极的剥离方法。形成在写入极的顶部包括硬掩模的写入极。一层用于加强写柱的侧壁围栏的材料被沉积。去除写磁极顶部的材料层的部分，同时侧壁围栏处的材料层是左侧，以向侧壁围栏提供支撑。

2. 发明授权

US07554764B2 Lift-off method for forming write pole of a magnetic write head and write pole formed thereby 失效
标题翻译：用于形成磁写头和由此形成的写磁极的写极的剥离方法
公开(公告)号：US07554764B2
公开(公告)日：2009-06-30
申请号：US11399820
申请日：2006-04-07
申请人： Hamid Balamane , Jyh-Shuey Lo , Yi Zheng
发明人： Hamid Balamane , Jyh-Shuey Lo , Yi Zheng
IPC分类号： G11B5/147
CPC分类号： G11B5/3163 , G11B5/1278 , Y10T29/49043
摘要： A lift-off method for forming write pole of a magnetic write head and write pole formed thereby is disclosed. A write pole including a hard mask on a top portion of the write pole is formed. A layer of material for reinforcing sidewall fencing of the write pole is deposited. Portions of the layer of material on top of the write pole are removed while the layer of material at the sidewall fencing is left to provide support to the sidewall fencing.
摘要翻译：公开了一种用于形成磁写头和由此形成的写磁极的写极的剥离方法。形成在写入极的顶部包括硬掩模的写入极。一层用于加强写柱的侧壁围栏的材料被沉积。除去写磁极顶部的材料层的部分，同时留下侧壁围栏处的材料层以向侧壁围栏提供支撑。

3. 发明申请

US20060070231A1 Process for creating a write head by forming a bump after the top pole is formed 失效
标题翻译：用于通过在形成顶极之后形成凸起来产生写入头的过程
公开(公告)号：US20060070231A1
公开(公告)日：2006-04-06
申请号：US10956221
申请日：2004-09-30
申请人： Amanda Baer , Hamid Balamane , Daniel Bedell , Jyh-Shuey Lo , Vladimir Nikitin , Aron Pentek , Yvette Winton
发明人： Amanda Baer , Hamid Balamane , Daniel Bedell , Jyh-Shuey Lo , Vladimir Nikitin , Aron Pentek , Yvette Winton
IPC分类号： G11B5/187
CPC分类号： G11B5/1871 , G11B5/3163 , Y10T29/49021 , Y10T29/49032 , Y10T29/49034 , Y10T29/49043 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： Methods for creating a write head by forming a bump after the top pole is formed are provided. In one embodiment, a bottom pole is created out of a first layer. A non-magnetic gap material is applied to the surface of the wafer. A top pole is created out of a second layer. After creating the top pole, a bump is created. The bump is used to protect at least a portion of the first layer while etching to create a stray flux absorber.
摘要翻译：提供了通过在形成顶极之后形成凸块来创建写入头的方法。在一个实施例中，从第一层产生底极。将非磁隙材料施加到晶片的表面。第二层创建顶杆。创建顶极后，会创建一个凸起。凸块用于在蚀刻时保护第一层的至少一部分以产生杂散通量吸收体。

4. 发明申请

US20070020386A1 Encapsulation of chemically amplified resist template for low pH electroplating 审中-公开
标题翻译：封装化学放大抗蚀剂模板，用于低pH电镀
公开(公告)号：US20070020386A1
公开(公告)日：2007-01-25
申请号：US11186166
申请日：2005-07-20
申请人： Daniel Bedell , John Lam , Matthew Last , Kim Lee , Jyh-Shuey Lo , Dennis McKean , Chun-Ming (Albert) Wang , Yi Zheng
发明人： Daniel Bedell , John Lam , Matthew Last , Kim Lee , Jyh-Shuey Lo , Dennis McKean , Chun-Ming (Albert) Wang , Yi Zheng
IPC分类号： B05D5/12 , B05D5/00 , B05D1/36 , B05C11/02
CPC分类号： G03F7/40 , C25D5/022 , C25D7/12 , G03F7/2024
摘要： Systems and methods for encapsulation of chemically amplified resist template for low pH electroplating are disclosed. In a first method embodiment, a resist template structure is formed on a wafer. Substantially all surfaces of the resist template structure are encapsulated to form an encapsulated structure. Magnetic materials are plated onto the encapsulated structure.
摘要翻译：公开了用于封装用于低pH电镀的化学放大抗蚀剂模板的系统和方法。在第一方法实施例中，在晶片上形成抗蚀剂模板结构。基本上将抗蚀剂模板结构的所有表面封装形成封装结构。将磁性材料电镀在封装结构上。

5. 发明授权

US07395595B2 Method for manufacturing P3 layer of a perpendicular magnetic write head 失效
标题翻译：用于制造垂直磁写头的P3层的方法
公开(公告)号：US07395595B2
公开(公告)日：2008-07-08
申请号：US11110534
申请日：2005-04-19
申请人： Kim Yang Lee , Jyh-Shuey Lo , Yi Zheng
发明人： Kim Yang Lee , Jyh-Shuey Lo , Yi Zheng
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： G11B5/3163 , G11B5/1278 , Y10T29/49043 , Y10T29/49048 , Y10T29/49052 , Y10T29/49071 , Y10T29/49073
摘要： A method for forming a P3 layer with NiFe and alumina mask using resist shrink process for use in perpendicular magnetic write heads. The method includes forming a laminated layer, forming an alumina layer on top of the laminated layer, depositing a conductive layer onto the laminated layer, forming a plating frame on a gap layer. The plating frame has a trench defined by plating track, the alumina, laminated and conductive layers each including an area below the trench. The method further includes shrinking the trench, plating NiFe into a portion of the shrunk trench, stripping the plating frame, removing the conductive layer except the conductive layer formed below the trench, removing the alumina layer except the alumina layer formed below the trench, removing the laminated layer except the laminated layer formed below the trench and patterning the laminated layer formed below the trench.
摘要翻译：使用用于垂直磁性写入头的抗蚀剂收缩工艺来形成具有NiFe和氧化铝掩模的P 3层的方法。该方法包括形成叠层，在叠层上形成氧化铝层，在层压层上沉积导电层，在间隙层上形成电镀框架。电镀框架具有由电镀轨道限定的沟槽，氧化铝，层压和导电层各自包括沟槽下方的区域。该方法还包括收缩沟槽，将NiFe电镀到收缩沟槽的一部分中，剥离电镀框架，除去形成在沟槽下方的导电层以外的导电层，除去形成在沟槽下方的氧化铝层以外的氧化铝层，除去除了形成在沟槽下方的层压层之外的层压层，并且对形成在沟槽下方的叠层进行图案化。

6. 发明申请

US20060232882A1 P3 fabrication with NiFe and alumina mask using resist shrinking process 失效
标题翻译： P3使用抗蚀剂收缩工艺制备NiFe和氧化铝掩模
公开(公告)号：US20060232882A1
公开(公告)日：2006-10-19
申请号：US11110534
申请日：2005-04-19
申请人： Kim Lee , Jyh-Shuey Lo , Yi Zheng
发明人： Kim Lee , Jyh-Shuey Lo , Yi Zheng
IPC分类号： G11B5/147
CPC分类号： G11B5/3163 , G11B5/1278 , Y10T29/49043 , Y10T29/49048 , Y10T29/49052 , Y10T29/49071 , Y10T29/49073
摘要： A method for forming a P3 layer with NiFe and alumina mask using resist shrink process for use in perpendicular magnetic write heads. The method includes forming a laminated layer, forming an alumina layer on top of the laminated layer, depositing a conductive layer onto the laminated layer, forming a plating frame on a gap layer. The plating frame has a trench defined by plating track, the alumina, laminated and conductive layers each including an area below the trench. The method further includes shrinking the trench, plating NiFe into a portion of the shrunk trench, stripping the plating frame, removing the conductive layer except the conductive layer formed below the trench, removing the alumina layer except the alumina layer formed below the trench, removing the laminated layer except the laminated layer formed below the trench and patterning the laminated layer formed below the trench.
摘要翻译：用于使用用于垂直磁写头的抗蚀剂收缩工艺形成具有NiFe和氧化铝掩模的P3层的方法。该方法包括形成叠层，在叠层上形成氧化铝层，在层压层上沉积导电层，在间隙层上形成电镀框架。电镀框架具有由电镀轨道限定的沟槽，氧化铝，层压和导电层各自包括沟槽下方的区域。该方法还包括收缩沟槽，将NiFe电镀到收缩沟槽的一部分中，剥离电镀框架，除去形成在沟槽下方的导电层以外的导电层，除去形成在沟槽下方的氧化铝层以外的氧化铝层，除去除了形成在沟槽下方的层压层之外的层压层，并且对形成在沟槽下方的叠层进行图案化。

7. 发明授权

US07675709B2 Magnetic write head having a stair notched, steep shouldered pole and a write gap bump 失效
标题翻译：磁性写头具有阶梯式切口，陡峭的肩部极点和写入间隙凸起
公开(公告)号：US07675709B2
公开(公告)日：2010-03-09
申请号：US11525789
申请日：2006-09-21
申请人： Hung-Chin Guthrie , Wen-Chien David Hsiao , Jyh-Shuey Lo , Aron Pentek
发明人： Hung-Chin Guthrie , Wen-Chien David Hsiao , Jyh-Shuey Lo , Aron Pentek
IPC分类号： G11B5/31 , G11B5/187
CPC分类号： G11B5/3116 , G11B5/1278 , G11B5/3163
摘要： A magnetic write head structure that maximizes write field strength while minimizing stray fields. The write pole structure maximizes write field strength by minimizing saturation of the magnetic pole tips, and minimizes stray field writing by preventing magnetic fields from extending laterally from the sides of the magnetic pole. The write head structure includes a write pole having a pole tip configured with a stair notched shape and a steep shouldered base beneath the stair notched portion. This configuration maximizes the amount of flux that can be delivered to the pole tip while also avoiding stray fields. The magnetic pole can also be configured with wing shaped extensions that extend laterally from the pole tip region but which are recessed from the ABS by a desired amount. The magnetic write head structure can be manufactured by forming a magnetic pole with a raised portion, depositing a write gap material over the magnetic pole and then forming a magnetic pedestal over the magnetic pole and write gap, the pedestal having a width significantly smaller than the width of the raised portion of the magnetic pole, a first ion mill can then be performed to notch and trim the magnetic pole. Then a non-magnetic layer such as alumina can be deposited and a second ion mill performed to form a stair notched configuration. An alumina bump can be formed prior to ion milling to provide a mask for forming the laterally extending, recessed wings in the pole tip of the magnetic pole.
摘要翻译：磁写头结构，使写入场强度最大化，同时最小化杂散场。写磁极结构通过最小化磁极尖端的饱和度来最大化写入场强度，并且通过防止磁场从磁极的侧面横向延伸来最小化杂散磁场写入。写头结构包括具有构造为具有阶梯形切口形状的极尖的写入极和在阶梯切口部下方的陡峭的肩部基座。该配置最大化可以传送到极尖的通量，同时也避免杂散场。磁极还可以配置有翼形延伸部，其从极尖区域横向延伸，但是从ABS凹入所需量。可以通过形成具有凸起部分的磁极来制造磁性写入头结构，在磁极上沉积写入间隙材料，然后在磁极和写入间隙上形成磁性基座，该基座具有明显小于磁极的凸起部分的宽度，然后可以执行第一离子磨机来切割和修整磁极。然后可以沉积诸如氧化铝的非磁性层，并且执行第二离子磨，以形成阶梯形缺口构型。可以在离子研磨之前形成氧化铝凸块，以提供用于在磁极的极尖中形成横向延伸的凹入的翼的掩模。

8. 发明申请

US20070058293A1 Magnetic write head having a self aligned, steep shoulder pole structure and method of manufacture thereof 失效
标题翻译：具有自对准陡肩极结构的磁写头及其制造方法
公开(公告)号：US20070058293A1
公开(公告)日：2007-03-15
申请号：US11228783
申请日：2005-09-15
申请人： Daniel Bedell , Hieu Lam , Kim Lee , Jyh-Shuey Lo
发明人： Daniel Bedell , Hieu Lam , Kim Lee , Jyh-Shuey Lo
IPC分类号： G11B5/147
CPC分类号： G11B5/3116 , G11B5/3163
摘要： A magnetic write head and method of manufacture thereof that has a first pole structure having a notched structure configured with a steep shoulder portion and a narrow vertical notch portion extending from the top of the steep shoulder portion. The write head also includes a second pole structure (P2) that has a very narrow width (track width) and that is self aligned with the narrow vertical notch structure of the first pole structure. The write head provides excellent magnetic properties including a very narrow track width and minimal side writing, while avoiding magnetic saturation of the poles.
摘要翻译：一种磁写头及其制造方法，其具有第一极结构，其具有构造为具有陡峭肩部的切口结构和从陡峭肩部的顶部延伸的窄垂直切口部。写头还包括具有非常窄的宽度（轨道宽度）并且与第一极结构的窄垂直切口结构自对准的第二极结构（P 2）。写头提供优异的磁性，包括非常窄的轨道宽度和最小的侧面写入，同时避免极点的磁饱和。

9. 发明申请

US20100107402A1 Methods Of Making Magnetic Write Heads With Use Of A Resist Channel Shrinking Solution Having Corrosion Inhibitors 失效
标题翻译：使用具有腐蚀抑制剂的抗蚀剂通道收缩溶液制造磁性写头的方法
公开(公告)号：US20100107402A1
公开(公告)日：2010-05-06
申请号：US12685455
申请日：2010-01-11
申请人： Christian Rene Bonhote , Jila Tabib , Dennis Richard Mckean , Daniel Wayne Bedell , Jyh-Shuey Lo , Hieu Lam , Kim Y. Lee
发明人： Christian Rene Bonhote , Jila Tabib , Dennis Richard Mckean , Daniel Wayne Bedell , Jyh-Shuey Lo , Hieu Lam , Kim Y. Lee
IPC分类号： G11B5/127 , B05D3/02
CPC分类号： G11B5/3116 , G11B5/3163 , Y10T29/49032 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044 , Y10T29/49048 , Y10T29/49052
摘要： One preferred method for use in making a device structure with use of the resist channel shrinking solution includes the steps of forming a first pedestal portion within a channel of a patterned resist; applying a resist channel shrinking solution comprising a resist channel shrinking film and corrosion inhibitors within the channel of the patterned resist; baking the resist channel shrinking solution over the patterned resist to thereby reduce a width of the channel of the patterned resist; removing the resist channel shrinking solution; and forming a second pedestal portion within the reduced-width channel of the patterned resist. Advantageously, the oxide layer and the corrosion inhibitors of the resist channel shrinking solution reduce corrosion in the pedestal during the act of baking the resist channel shrinking solution.
摘要翻译：用于制造使用抗蚀剂通道收缩溶液的器件结构的一种优选方法包括在图案化抗蚀剂的通道内形成第一基座部分的步骤; 在图案化的抗蚀剂的通道内施加包含抗蚀剂通道收缩膜和腐蚀抑制剂的抗蚀剂通道收缩溶液; 在图案化的抗蚀剂上烘烤抗蚀剂通道收缩溶液，从而减小图案化抗蚀剂的通道的宽度; 去除抗蚀剂通道收缩溶液; 以及在所述图案化抗蚀剂的所述减小宽度的通道内形成第二基座部分。有利地，抗蚀剂通道收缩溶液的氧化物层和腐蚀抑制剂在烘烤抗蚀剂通道收缩溶液的作用下降低了基座中的腐蚀。

10. 发明授权

US07652855B2 Magnetic sensor with extended free layer and overlaid leads 有权
标题翻译：具有扩展自由层和重叠导线的磁性传感器
公开(公告)号：US07652855B2
公开(公告)日：2010-01-26
申请号：US11595186
申请日：2006-11-09
申请人： James Mac Freitag , David Eugene Heim , Kuok San Ho , Wipul Pemsiri Jayasekara , Kim Y. Lee , Tsann Lin , Jyh-Shuey Lo , Mustafa Michael Pinarbasi , Ching Hwa Tsang
发明人： James Mac Freitag , David Eugene Heim , Kuok San Ho , Wipul Pemsiri Jayasekara , Kim Y. Lee , Tsann Lin , Jyh-Shuey Lo , Mustafa Michael Pinarbasi , Ching Hwa Tsang
IPC分类号： G11B5/39
CPC分类号： G11B5/3932 , B82Y10/00 , B82Y25/00 , G11B2005/3996
摘要： A lead overlay design of a magnetic sensor is described with sensor and free layer dimensions such that the free layer is stabilized by the large demagnetization field due to the shape anisotropy. In one embodiment the giant magnetoresistive (GMR) effect under the leads is destroyed by removing the antiferromagnetic (AFM) and pinned layers above the free layer. The overlaid lead pads are deposited on the exposed spacer layer at the sides of the mask that defines the active region. In other embodiment a layer of electrically insulating material is deposited over the sensor to encapsulate it and thereby insulate it from contact with the hardbias structures. Various embodiments with self-aligned leads are also described. In a variation of the encapsulation embodiment, the insulating material is also deposited under the lead pads so the electrical current is channeled through the active region of the sensor and sidewall deposited lead pads.
摘要翻译：用传感器和自由层尺寸描述磁传感器的引线覆盖设计，使得由于形状各向异性，自由层由大的退磁场稳定。在一个实施例中，引线下的巨磁阻（GMR）效应通过去除自由层上方的反铁磁（AFM）和固定层而被破坏。覆盖的引线焊盘沉积在限定有源区的掩模侧面上的暴露间隔层上。在另一个实施例中，电绝缘材料层沉积在传感器上以将其封装并由此使其与硬质合金结构的接触绝缘。还描述了具有自对准引线的各种实施例。在封装实施例的变型中，绝缘材料也沉积在引线焊盘下方，使得电流通过传感器的有源区域和侧壁沉积的引线焊盘。

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