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21. 发明授权

US06660651B1 Adjustable wafer stage, and a method and system for performing process operations using same 有权
标题翻译：可调晶片台，以及使用其进行处理操作的方法和系统
公开(公告)号：US06660651B1
公开(公告)日：2003-12-09
申请号：US10010463
申请日：2001-11-08
申请人： Richard J. Markle
发明人： Richard J. Markle
IPC分类号： H01L2100
CPC分类号： H01L21/67259 , H01L21/67069 , H01L21/68 , H01L21/682
摘要： A process tool comprised of an adjustable wafer stage and various methods and systems for performing process operations using same is disclosed herein. In one illustrative embodiment, the process tool is comprised of a process chamber, and an adjustable wafer stage in the process chamber to receive a wafer positioned thereabove, the wafer stage having a surface that is adapted to be raised, lowered or tilted. In further embodiments, the process tool further comprises at least three pneumatic cylinders or at least three rack and pinion combinations, each of which are operatively coupled to the wafer stage by a ball and socket connection. A system disclosed herein is comprised of a metrology tool for measuring a plurality of wafers processed in a process tool to determine across-wafer variations produced by the process tool, a process tool comprised of an adjustable wafer stage that has a surface adapted to receive a wafer to be processed in the tool, and a controller for adjusting a plane of the surface of the wafer stage based upon the determined across-wafer variations produced by the tool, whereby the process tool processes at least one subsequently processed wafer positioned on the wafer stage after the plane of the surface of the wafer stage has been adjusted.
摘要翻译：本文公开了一种由可调晶片台和用于执行使用其的处理操作的各种方法和系统组成的处理工具。在一个说明性实施例中，处理工具包括处理室和处理室中的可调晶片台，用于接收位于其上方的晶片，晶片台具有适于升高，降低或倾斜的表面。在另外的实施例中，处理工具还包括至少三个气动缸或至少三个齿条和小齿轮组合，每个组合通过球窝连接可操作地联接到晶片台。本文公开的系统包括用于测量在处理工具中处理的多个晶片的测量工具，以确定由工艺工具产生的跨晶片变化，包括可调节晶片台的处理工具，该可调晶片台具有适于接收在工具中处理的晶片，以及控制器，用于基于由工具产生的确定的跨晶片变化来调整晶片台的表面的平面，由此处理工具处理位于晶片上的至少一个随后处理的晶片已经调整了晶片台表面的平面后的阶段。

22. 发明授权

US06621412B1 Troubleshooting method involving image-based fault detection and classification (FDC) and troubleshooting guide (TSG), and systems embodying the method 有权
标题翻译：涉及图像故障检测和分类（FDC）和故障排除指南（TSG）的故障排除方法以及体现该方法的系统
公开(公告)号：US06621412B1
公开(公告)日：2003-09-16
申请号：US09782840
申请日：2001-02-14
申请人： Richard J. Markle , Elizabeth Weaver
发明人： Richard J. Markle , Elizabeth Weaver
IPC分类号： G08B2300
CPC分类号： H01L22/20
摘要： Several different embodiments of a troubleshooting method are described. In one embodiment, an alarm data image is provided (e.g., to a user). The alarm data image may be displayed upon on a display screen visible by the user. The alarm data image includes an image indicative of a problem (e.g., an abnormal condition or faulty state of a processing or metrology tool). Information indicative of a class in which the problem resides is used to access a corresponding portion of a troubleshooting guide (TSG). The corresponding portion of the TSG includes one or more symptom images, wherein each symptom image includes an image indicative of a symptom of the class in which the problem resides. Each symptom image has a corresponding corrective action. A selected one of the symptom images is selected (e.g., by the user). Where the selecting is performed by the user, the user may select one of the symptom images the user believes most closely resembles the alarm data image. The corrective action corresponding to the selected one of the at least one symptom image is provided (e.g., to the user). The corrective action may be displayed upon on the display screen. The corrective action may be accomplished (e.g., by the user) to solve the problem. The alarm data image and/or the symptom images may be, for example, two-dimensional (2D) charts or graphs, three-dimensional (3D) charts or graphs, or images or pictures. Several embodiments of a fabrication system are described, each incorporating the troubleshooting method.
摘要翻译：描述了故障排除方法的几个不同实施例。在一个实施例中，提供警报数据图像（例如，给用户）。警报数据图像可以在用户可见的显示屏幕上显示。警报数据图像包括指示问题的图像（例如，处理或计量工具的异常状况或故障状态）。指示问题所在的类的信息用于访问故障排除指南（TSG）的相应部分。 TSG的相应部分包括一个或多个症状图像，其中每个症状图像包括指示问题所在的类的症状的图像。每个症状图像都有相应的纠正措施。所选择的一个症状图像被选择（例如，由用户）。在用户进行选择的情况下，用户可以选择用户认为最类似于警报数据图像的症状图像之一。提供与所述至少一个症状图像中所选择的一个对应的校正动作（例如，给用户）。纠正措施可能会在显示屏幕上显示。纠正措施可以由用户（例如，用户）来实现来解决问题。警报数据图像和/或症状图像可以是例如二维（2D）图表或图形，三维（3D）图表或图形，或图像或图像。描述了制造系统的几个实施例，每个都包括故障排除方法。

23. 发明授权

US07502702B1 Method and apparatus for dynamic adjustment of sensor and/or metrology sensitivities 有权
标题翻译：用于动态调节传感器和/或计量灵敏度的方法和装置
公开(公告)号：US07502702B1
公开(公告)日：2009-03-10
申请号：US11221078
申请日：2005-09-07
申请人： Richard J. Markle , Christopher A. Bode , Kevin R. Lensing
发明人： Richard J. Markle , Christopher A. Bode , Kevin R. Lensing
IPC分类号： G01D18/00
CPC分类号： G01D18/00
摘要： The present invention provides a method and apparatus for dynamic adjustment of sensor and/or metrology sensitivities. The method includes accessing measurement information provided by a first measurement device and modifying a sensitivity of a second measurement device based on the measurement information provided by the first measurement device.
摘要翻译：本发明提供一种用于动态调节传感器和/或计量灵敏度的方法和装置。该方法包括访问由第一测量装置提供的测量信息，并且基于由第一测量装置提供的测量信息来修改第二测量装置的灵敏度。

24. 发明授权

US07402257B1 Plasma state monitoring to control etching processes and across-wafer uniformity, and system for performing same 有权
标题翻译：用于控制蚀刻工艺和跨晶片均匀性的等离子体状态监测以及执行相同的系统
公开(公告)号：US07402257B1
公开(公告)日：2008-07-22
申请号：US10209585
申请日：2002-07-30
申请人： Thomas J. Sonderman , Richard J. Markle
发明人： Thomas J. Sonderman , Richard J. Markle
IPC分类号： G01R31/00
CPC分类号： H01L22/20
摘要： The present invention is generally directed to plasma state monitoring to control etching processes and across-wafer uniformity, and a system for performing same. In one illustrative embodiment, the method comprises generating a plasma within an etching tool, monitoring at least one characteristic of the generated plasma, and controlling at least one parameter of a plasma etching process performed in the tool based upon the monitored at least one characteristic of the plasma. In another illustrative embodiment, the method comprises generating a plasma within an etch tool, performing a plasma etching process within the etch tool, determining at least one characteristic of the plasma, and controlling at least one parameter of the etching process based upon a comparison of the determined at least one characteristic of the plasma and a target value for the determined at least one characteristic of the plasma.
摘要翻译：本发明一般涉及用于控制蚀刻工艺和跨晶片均匀性的等离子体状态监测，以及用于执行其的系统。在一个说明性实施例中，该方法包括在蚀刻工具内产生等离子体，监测产生的等离子体的至少一个特征，以及基于所监测的至少一个特征来控制在工具中执行的等离子体蚀刻工艺的至少一个参数等离子体。在另一示例性实施例中，该方法包括在蚀刻工具内产生等离子体，在蚀刻工具内执行等离子体蚀刻工艺，确定等离子体的至少一种特性，以及基于比较来控制蚀刻工艺的至少一个参数所确定的等离子体的至少一个特性和所确定的等离子体的至少一个特性的目标值。

25. 发明授权

US07321993B1 Method and apparatus for fault detection classification of multiple tools based upon external data 有权
标题翻译：基于外部数据的多种工具的故障检测分类方法和装置
公开(公告)号：US07321993B1
公开(公告)日：2008-01-22
申请号：US10883364
申请日：2004-07-01
申请人： Richard J. Markle , Elfido Coss, Jr.
发明人： Richard J. Markle , Elfido Coss, Jr.
IPC分类号： G06F11/00
CPC分类号： G05B23/0235 , G05B2223/02
摘要： The present invention is generally directed to various methods and systems for fault detection control of multiple tools based upon external data. In one illustrative embodiment, the method includes monitoring each of a plurality of tools to determine if a fault condition occurs in any of the tools, each of the tools being comprised of at least one integrated metrology device, monitoring external data regarding at least one parameter that may impact an operation performed in each of the tools, and determining if an indicated fault condition in at least one of the tools is a valid fault condition or a systemic fault condition associated with a change in a value of the at least one parameter.
摘要翻译：本发明一般涉及用于基于外部数据的多个工具的故障检测控制的各种方法和系统。在一个说明性实施例中，该方法包括监视多个工具中的每个工具以确定是否在任何工具中发生故障状况，每个工具由至少一个集成测量装置组成，监视关于至少一个参数的外部数据这可能影响在每个工具中执行的操作，并且确定至少一个工具中的指示的故障状况是否是与所述至少一个参数的值的变化相关联的有效故障状况或系统故障状况。

26. 发明授权

US07031793B1 Conflict resolution among multiple controllers 失效
标题翻译：多个控制器之间的冲突解决
公开(公告)号：US07031793B1
公开(公告)日：2006-04-18
申请号：US10286305
申请日：2002-11-01
申请人： Naomi M. Jenkins , Jin Wang , Richard J. Markle , Elfido Coss, Jr. , Brian K. Cusson
发明人： Naomi M. Jenkins , Jin Wang , Richard J. Markle , Elfido Coss, Jr. , Brian K. Cusson
IPC分类号： G06F19/00 , G05B11/01 , G05B19/18 , G05B15/02
CPC分类号： G05B19/042
摘要： A method and an apparatus are provided for conflict resolution among a plurality of controllers. The method includes receiving a first control instruction from a first process controller to process a workpiece, receiving a second control instruction from a second process controller to process the workpiece and adjusting at least one of the first control instruction and the second control instruction to process the workpiece to achieve a desired process goal.
摘要翻译：为多个控制器之间的冲突解决提供了一种方法和装置。该方法包括从第一过程控制器接收第一控制指令以处理工件，从第二过程控制器接收第二控制指令以处理工件并调整第一控制指令和第二控制指令中的至少一个以处理工件达到所期望的工艺目标。

27. 发明授权

US06925347B1 Process control based on an estimated process result 有权
标题翻译：基于估计过程结果的过程控制
公开(公告)号：US06925347B1
公开(公告)日：2005-08-02
申请号：US10223174
申请日：2002-08-19
申请人： Michael L. Miller , Thomas J. Sonderman , Alexander J. Pasadyn , Richard J. Markle , Brian K. Cusson , Patrick M. Cowan , Timothy L. Jackson , Naomi M. Jenkins
发明人： Michael L. Miller , Thomas J. Sonderman , Alexander J. Pasadyn , Richard J. Markle , Brian K. Cusson , Patrick M. Cowan , Timothy L. Jackson , Naomi M. Jenkins
IPC分类号： G05B19/418 , G06F19/00
CPC分类号： G05B19/41875 , G05B2219/45031 , Y02P90/22
摘要： A method and apparatus is provided for a process control based on an estimated process result. The method comprises processing a workpiece using a processing tool, receiving trace data associated with the processing of the workpiece from the processing tool and estimating at least one process result of the workpiece based on at least a portion of the received trace data. The method further comprises adjusting processing of a next workpiece based on the estimated at least one process result.
摘要翻译：基于估计的处理结果提供了用于过程控制的方法和装置。该方法包括使用处理工具处理工件，从处理工具接收与工件的处理相关联的跟踪数据，并基于所接收的跟踪数据的至少一部分估计工件的至少一个处理结果。该方法还包括基于估计的至少一个处理结果来调整下一个工件的处理。

28. 发明授权

US06794299B1 Various methods of controlling conformal film deposition processes, and a system for accomplishing same 有权
标题翻译：控制保形膜沉积工艺的各种方法，以及用于实现其的系统
公开(公告)号：US06794299B1
公开(公告)日：2004-09-21
申请号：US10161312
申请日：2002-06-03
申请人： Richard J. Markle , David Bennett
发明人： Richard J. Markle , David Bennett
IPC分类号： H01L21302
CPC分类号： H01L22/20 , H01L21/76801 , H01L21/76838 , H01L21/76841 , H01L22/34
摘要： Various methods of controlling conformal film deposition processes, and a system for accomplishing same are disclosed. In one embodiment, the method comprises forming a plurality of features above a semiconducting substrate, determining at least one of a critical dimension and a cross-sectional profile of at least one of the plurality of features, determining a thickness for a layer of material to be conformally deposited around the plurality of features based upon at least one of the determined critical dimension and cross-sectional profile and depositing the layer of material around the plurality of features to the determined thickness. In some embodiments, the method further comprises conformally depositing a first layer of material above a plurality of features formed above a semiconducting substrate, measuring a thickness of the first layer of material, determining a thickness of a second layer of material to be conformally deposited around a plurality of features formed above a subsequently processed substrate based upon the measured thickness of the first layer, and conformally depositing the second layer of material to the determined thickness around the plurality of features on the subsequently processed substrate.
摘要翻译：公开了控制保形膜沉积工艺的各种方法，以及用于实现其的系统。在一个实施例中，该方法包括在半导体衬底上形成多个特征，确定多个特征中的至少一个的临界尺寸和横截面轮廓中的至少一个，确定材料层的厚度基于所确定的临界尺寸和横截面轮廓中的至少一个，围绕多个特征共形沉积，并将材料层围绕多个特征沉积到所确定的厚度。在一些实施例中，该方法还包括在半导体衬底上形成的多个特征上方共形沉积材料的第一层，测量第一层材料的厚度，确定要保形地沉积的第二层材料的厚度基于所测量的第一层的厚度，形成在随后处理的衬底上方的多个特征，并且将随后处理的衬底上的多个特征的第二材料层保形地沉积到所确定的厚度。

29. 发明授权

US06716646B1 Method and apparatus for performing overlay measurements using scatterometry 有权
标题翻译：使用散射法进行覆盖测量的方法和装置
公开(公告)号：US06716646B1
公开(公告)日：2004-04-06
申请号：US09906517
申请日：2001-07-16
申请人： Marilyn I. Wright , Kevin R. Lensing , James Broc Stirton , Richard J. Markle
发明人： Marilyn I. Wright , Kevin R. Lensing , James Broc Stirton , Richard J. Markle
IPC分类号： H01L2166
CPC分类号： H01L22/12
摘要： The present invention provides for a method and an apparatus for overlay measurements using optical techniques. At least one semiconductor device is processed. Metrology data from the processed semiconductor device is acquired. A scatterometry overlay analysis based upon the metrology data is performed. At least one modified manufacturing parameter is calculated based upon the scatterometry overlay analysis.
摘要翻译：本发明提供一种使用光学技术进行覆盖测量的方法和装置。至少一个半导体器件被处理。获取来自处理后的半导体器件的计量数据。执行基于测量数据的散射测绘覆盖分析。基于散点分析叠加分析计算至少一个修改后的制造参数。

30. 发明授权

US06650423B1 Method and apparatus for determining column dimensions using scatterometry 失效
标题翻译：使用散射法确定色谱柱尺寸的方法和装置
公开(公告)号：US06650423B1
公开(公告)日：2003-11-18
申请号：US09897623
申请日：2001-07-02
申请人： Richard J. Markle , Kevin R. Lensing , J. Broc Stirton , Marilyn I. Wright
发明人： Richard J. Markle , Kevin R. Lensing , J. Broc Stirton , Marilyn I. Wright
IPC分类号： G01B1100
CPC分类号： G01B11/00
摘要： A test structure includes a plurality of trenches and a plurality of columns defined in the trenches. A method for determining column dimensions includes providing a wafer having a test structure comprising a plurality of trenches and a plurality of columns defined in the trenches; illuminating at least a portion of the columns with a light source; measuring light reflected from the illuminated portion of the columns to generate a reflection profile; and determining a dimension of the columns based on the reflection profile. A metrology tool adapted to receive a wafer having a test structure comprising a plurality of trenches and a plurality of columns defined in the trenches includes a light source, a detector, and a data processing unit. The light source is adapted to illuminate at least a portion of the columns. The detector is adapted to measure light reflected from the illuminated portion of the columns to generate a reflection profile. The data processing unit is adapted to determine a dimension of the columns based on the reflection profile.
摘要翻译：测试结构包括多个沟槽和限定在沟槽中的多个列。用于确定柱尺寸的方法包括提供具有测试结构的晶片，该测试结构包括限定在沟槽中的多个沟槽和多个列; 用光源照射柱的至少一部分; 测量从所述列的被照亮部分反射的光以产生反射曲线; 以及基于所述反射概况确定所述列的尺寸。适于接收具有包括多个沟槽的测试结构的晶片的测量工具和在沟槽中限定的多个列包括光源，检测器和数据处理单元。光源适于照亮柱的至少一部分。检测器适于测量从列的照明部分反射的光以产生反射曲线。数据处理单元适于基于反射曲线来确定列的尺寸。

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